1. Electronic structure of a 3x3-ordered silicon layer on Al(111)
- Author
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Sato, Y., Fukaya, Y., Cameau, M., Kundu, A. K., Shiga, D., Yukawa, R., Horiba, K., Chen, C. -H., Huang, A., Jeng, H. -T., Ozaki, T., Kumigashira, H., Niibe, M., and Matsuda, I.
- Subjects
Condensed Matter - Materials Science - Abstract
Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) implies that the metallic band originates from the Al-Si hybrid state that has the Dirac cone-like dispersion curves. The Si layer on Al(111) can be a model system of Xene to realize the massless electronic system through the overlayer-substrate interaction., Comment: 6 pages, 6 figures
- Published
- 2020
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