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Abstract A ground-breaking roadmap of III-nitride solid-state deep-ultraviolet light emitters is demonstrated to realize the wafer-scale fabrication of devices in vertical injection configuration, from 2 to 4 inches. The epitaxial device structure is stacked on a GaN template instead of conventionally adopted AlN, where the primary concern of the tensile strain for Al-rich AlGaN on GaN is addressed via an innovative decoupling strategy, making the device structure decoupled from the underlying GaN template. Moreover, the strategy provides a protection cushion against the stress mutation during the removal of substrates. As such, large-sized wafers can be obtained without surface cracks, even after the removal of the sapphire substrates by laser lift-off. Wafer-scale fabrication of 280 nm vertical injection deep-ultraviolet light-emitting diodes is eventually demonstrated, where a light output power of 65.2 mW is achieved at a current of 200 mA, largely thanks to the significant improvement of light extraction. This work will definitely speed up the application of III-nitride solid-state deep-ultraviolet light emitters featuring high performance and scalability.

Abstract AlGaN‐based ultraviolet light‐emitting diodes (UV‐LEDs) have the advantages of mercury (Hg) pollution free, small size, high efficiency, and so on, and are widely used in military, medical, and industrial fields, which are considered to be the most promising alternative to the traditional Hg lamps. Great efforts are made over the past few decades to improve the device performance, thereby meeting the commercial production and application requirements of UV‐LEDs, which is always accompanied by a series of interesting physical topics. In this review, the recent research progress in performance of AlGaN‐based UV‐LEDs is summarized from the perspectives of electrical injection, electro‐optical conversion, and light extraction, which are responsible for the operation of devices. The detailed discussions include the major challenges, the corresponding technological breakthroughs, and also the outlook of material growth, energy band modulation, as well as device fabrication involved in UV‐LEDs, which are expected to be helpful for the thorough comprehension of device physics and further development of AlGaN‐based UV‐LEDs.

Land use types, land development and utilization intensity within watersheds have changed based on intensifying human activities and climate change, thereby inducing spatiotemporal variations in non-point source pollution (NPS), significantly impacting soil and water quality. This study performed a case study on an ecological environment functional zone at the northern foot of Qinling Mountains, an area strongly affected by human activities and land use changes. It employed an improved potential non-point pollution index (PNPI) model to analyze potential non-point source pollution (PNPS) and associated risk evolution characteristics in watershed over the past 30 years. The results indicate that from 1990 to 2020, the dominant land use categories were forest and arable land, making up 95 % of the entire watershed area. Notably, urban residential land presented the most significant expansion rates and nearly doubled in area between 1990 and 2020, whereas shrubland, grassland, and unused land showed a decreasing trend. With the application of the quantile classification method, PNPS risk values were divided into five categories: very low, low, moderate, high, and very high. A polarized trend in risk was observed, with increases in areas influenced by human activities and rapid expansion of very high-risk regions. Concurrently, the pollution risk in the upstream water source area decreased. In recent years, accelerated urbanization has been the main driver causing expansion of high PNPS risk regions. This study explores the spatial and temporal evolution of PNPS risk in the Heihe Basin by using an improved PNPI model. The improved model is more accurate in calculations and provides a better understanding of the distribution of PNPS, which is an important reference for watershed management and water resource governance.

We demonstrate a tunable single-longitudinal-mode (SLM) narrow linewidth erbium-doped fiber (EDF) ring laser (EDFRL) in a cost-effective way. The laser incorporates an unpumped-EDF-based saturable absorber (SA) and a self-injection feedback loop for mode selection. The EDFDRL exhibits linear tunability of 12.57 pm/$^{\circ }$C from 15 $^{\circ }$C to 45 $^{\circ }$C with a maximum tuning range of 0.3664 nm. At a pump current of 200 mA, we achieve a SLM EDFRL characterized by a high OSNR of 75 dB and an ultra-narrow linewidth of 330 Hz. Furthermore, it shows an excellent wavelength stability, with a maximum fluctuation of only 11.23 pm.

Improving light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) has been attempted by thinning the p-AlGaN/p-GaN layer and adopting Ni/Au/Al composite electrodes. It is found that the thin p-AlGaN/p-GaN layer can reduce the light absorption and the Ni/Au/Al electrodes achieve high reflectivity and Ohmic contact to ensure the enhancement of the light extraction and maintain fine electrical properties. By this approach, the maximum external quantum efficiency of the DUV-LEDs with optimized Ni/Au/Al reflective electrodes is increased by 40%, compared to that with conventional Ni/Au electrodes over the whole current range.

In order to give full play to the economic application value of Xinjiang Apocynum venetum and reduce the environmental pollution caused by the traditional chemical degumming process, a combination of biological and chemical method is used to degum Apocynum venetum. The orthogonal test method is used to explore the optimal parameters for the degumming process. The surface morphology, crystallinity, fineness, strength, moisture regain, and spinnability index of the fibers are tested after degumming. The results showed that after degumming, the fiber fineness was 4.97 dtex, the strength was 22.84 cN/dtex, the crystallinity was 74.5%, the moisture regain reached 7.7380%, and the spinnability was good.

The arid region in China with rich mineral resources are belongs to ecological fragile region with inadequate recovering capacity. Hundred years of continues mining of mineral resources for economic purposes, leads to the problem of land degradation caused by the spatial coupling of large-scale mining disturbance and arid fragile ecological environment. The environmental problems created by mining have not been addressed promptly, while at the same time, new problems have emerged. On the basis of our 20 years of practical experience on ecological restoration in mining areas, review and synthesis of selective literature, with interpretation and perspective, the mining situation and its ecological impacts, the factors impeding ecological restoration capability in the arid region in China were examined, the key challenges and promotion strategy were presented. The main findings of this study are as follows: Land degradation is the most prominent problem resulting in mining activities, and mainly reflected by immediate disturbance, long term effects and ecological degradation. The main challenges faced by mining area restoration in arid areas are unclear objectives of ecological restoration, lack of ecological water consumption, unreasonable selection of indigenous plants, serious land degradation and wide restoration area. Our restoration experiments in typical mining areas have proved that the micro-topography reconstruction measures can increase surface roughness, redistribute limited precipitation resources (especially snow), and make soil water and nutrients carried by surface runoff and collected in valleys to regulate soil infiltration and water supply, so as to achieve water-saving and non-irrigated vegetation restoration. The ideal restoration effects are the improvement of vegetation coverage, the increase of available land resources, and the improvement of ecosystem services in mining areas. This study would be helpful to carried out related implementation on ecological restoration and could act as a valuable reference for the researchers involved in the ecological restoration in arid region.

Near-infrared stimulated emission from a high-quality InN layer under optical pumping was observed with a threshold excitation power density of 0.3 and 4 kW cm−2 at T = 8 and 77 K, respectively. To achieve such a low threshold power density, vicinal GaN substrates were used to reduce the edge-component threading dislocation (ETD) density of the InN film. Cross-sectional transmission electron microscopy images reveal that the annihilation of ETDs can be divided into two steps, and the ETD density can be reduced to approximately 5 × 108 cm−2 near the surface of the 5-µm-thick film. The well-resolved phonon replica of the band-to-band emission in the photoluminescence spectra at 9 K confirm the high quality of the InN film. As a result, the feasibility of InN-based photonic structures and the underlying physics of their growth and emission properties are demonstrated.

Abstract Vertical GaN‐on‐Si devices are promising for the next‐generation high‐voltage power electronics with low cost and high efficiency. However, their applications are impeded by the limited thickness of crack‐free GaN layers and high threading dislocation density (TDD) in the layer. Buffer layers are crucial for stress control while they usually behave with poor surface morphology, which causes early stress relaxation in GaN and limited thickness. Hereby, a terrace engineering approach for the buffer layers is proposed. Through tuning the supersaturation ratio, the terrace width can be manipulated and an atomically smooth AlGaN buffer layer can be realized, which effectively reduces the compressive stress relaxation and provides a firm foundation for thick GaN growth. As a result, a 7.5 µm thick GaN drift layer with TDD as low as 8.6 × 107 cm−2 is achieved on Si substrates. The room temperature electron mobility of the GaN drift layer can be raised up to 1210 cm2 V−1 s−1. The fabricated PiN diode shows a high breakdown voltage of 1058 V as well as a high on/off ratio of 1012. This work thus truly demonstrates the potential of high‐performance and low‐cost GaN‐based electronic as well as optoelectronic devices on Si platforms.

A desorption-tailoring strategy is demonstrated to steadily prepare self-assembled p-AlGaN superlattices with sub-nanometer ultrathin barriers by MOCVD, which juggle the hole concentration and transport.

Heavy carbon (C) doping is of great significance for semi-insulating GaN in power electronics. However, the doping behaviors, especially the atomic configurations and related self-compensation mechanisms, are still under debate. Here, with the formation energy as the input parameter, the concentrations of C defects with different atomic configurations are calculated by taking the configurational entropy into account. The result shows that the concentrations of tri-carbon complexes (CNCiCN, where Ci refers to interstitial carbon) and dicarbon complexes (CNCGa) cannot be neglected under heavy doping conditions. The concentration of CNCiCN can even exceed that of CN at sufficiently high doping levels. Especially, we suggest that it is the tri-carbon complex CNCiCN, instead of the commonly expected CGa, that acts as the self-compensation centers in semi-insulating GaN under heavy C doping conditions. The results provide a fresh look on the long-standing problem about the self-compensation mechanisms in C doped GaN.

AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV) light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap. AlGaN-based devices have extensive applicability owing to their stable physico-chemical properties. With decades of research effort, significant progress has been achieved in enhancing the working efficiency of AlGaN-based LEDs by optimizing the crystalline quality, doping efficiency, and device design. In this review, methods to obtain high-quality AlGaN-based materials, achieve high doping efficiency, and design UV-LED structures are summarized and discussed. Finally, the issues that need to be addressed in AlGaN-based UV-LED devices are highlighted.

Abstract Epitaxial growth of III‐nitrides on 2D materials enables the realization of flexible optoelectronic devices for next‐generation wearable applications. Unfortunately, it is difficult to obtain high‐quality III‐nitride epilayers on 2D materials such as hexagonal BN (h‐BN) due to different atom hybridizations. Here, the epitaxy of single‐crystalline GaN films on the chemically activated h‐BN/Al2O3 substrates is reported, paying attention to interface atomic configuration. It is found that chemical‐activated h‐BN provides BON and NO bonds, where the latter ones act as effective artificial dangling bonds for following GaN nucleation, leading to Ga‐polar GaN films with a flat surface. The h‐BN is also found to be effective in modifying the compressive strain in GaN film and thus improves indium incorporation during the growth of InGaN quantum wells, resulting in the achievement of pure green light‐emitting diodes. This work provides an effective way for III‐nitrides epitaxy on h‐BN and a possible route to overcome the epitaxial bottleneck of high indium content III‐nitride light‐emitting devices.

The cross-linked hierarchical structure in biological systems provides insight into the development of innovative material structures. Specifically, the sarcoplasmic reticulum muscle is able to transmit electrical impulses in skeletal muscle due to its cross-linked hierarchical tubular cell structure. Inspired by the cross-linked tubular cell structure, we designed and built chemical cross-links between the carbon nanotubes within the carbon nanotube yarn (CNT yarn) structure by an esterification reaction. Consequently, compared with the pristine CNT yarn, its electrical conductivity dramatically enhanced 348%, from 557 S/cm to 1950 S/cm. Furthermore, when applied with three voltages, the electro-thermal temperature of esterified CNT yarn reached 261 °C, much higher than that of pristine CNT yarn (175 °C). In addition, the esterified CNT yarn exhibits a linear and stable piezo-resistive response, with a 158% enhanced gauge factor (the ratio of electrical resistance changing to strain change ~1.9). The superconductivity, flexibility, and stable sensitivity of the esterified flexible CNT yarn demonstrate its great potential in the applications of intelligent devices, smart clothing, or other advanced composites.

Smart textiles have not only the necessary functions of daily wear, but also the intelligence. The focus of the current textile materials research is the selection of flexible material. For flexible materials, carbon material is one of the ideal materials for preparing flexible strain gauges. The application of flexible strain sensor prepared by carbon nanotubes as a flexible material in smart textiles is the research content. The research status of carbon nanotubes flexible strain sensor is introduced from the aspects of the structure, properties and application. The characteristics and functions of flexible strain gages prepared with carbon nanotube fibers and carbon nanotube films as flexible materials are discussed in terms of selection, preparation method, performance test and application. At the same time, the advantages and disadvantages of the flexible strain sensor of carbon nanotubes are reviewed from the aspects of preparation difficulty, production cost and practical application effect. High sensitivity with high strain will be a key research direction for carbon nanotube flexible strain sensors.

Abstract We report the enhancement of the polarization and internal quantum efficiency (IQE) of deep-UV LEDs by evaporating Al nanoparticles on the device surface to induce localized surface plasmons (LSPs). The deep-UV LEDs polarization is improved due to part of TM emission turns into TE emission through LSPs coupling. The significantly enhanced IQE is attributed to LSPs coupling, which suppress the participation of delocalized and dissociated excitons to non-radiative recombination process.

The role of low-resistivity substrate on vertical leakage current (VLC) of AlGaN/GaN-on-Si epitaxial layers has been investigated. AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on both p-type and n-type Si substrates with low resistivity are applied to analyze the vertical leakage mechanisms. The activation energy (Ea) for p-type case is higher than that for n-type at 0−600 V obtained by temperature-dependent current-voltage measurements. An additional depletion region in the region of 0−400 V forms at the AlN/p-Si interface but not for AlN/n-Si. That depletion region leads to a decrease of electron injection and hence effectively reduces the VLC. While in the region of 400−600 V, the electron injection from p-Si substrate increases quickly compared to n-Si substrate, due to the occurrence of impact ionization in the p-Si substrate depletion region. The comparative results indicate that the doping type of low-resistivity substrate plays a key role for VLC.

It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~1013 cm−2 on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. In this paper, the response of hydrogen sensors based on Mg-doped InN films (InN:Mg) grown by molecular beam epitaxy has been investigated. The sensor exhibits a resistance variation ratio of 16.8% with response/recovery times of less than 2 min under exposure to 2000 ppm H2/air at 125 °C, which is 60% higher in the magnitude of response than the one based on the as-grown InN film. Hall-effect measurement shows that the InN:Mg with suitable Mg doping level exhibits larger sheet resistance, which accords with buried p-type conduction in the InN bulk. This work shows the advantage of InN:Mg and signifies its potential for sensing application.