106 results on '"Fuchi, Shingo"'
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2. Luminescence properties of PrF3-doped Sb2O3–ZnO–GeO2 glass phosphors for near-infrared wideband light-source
3. Effects of GaAs Surface Treatment Processes on Photocurrent Properties of Cs/p-GaAs (001) Fabricated Using a MOCVD–NEA Multichamber System
4. Development of a rapid immunoassay system: Luminescent detection of antigen-associated antibody-luciferase in the presence of a dye that absorbs light from free antibody-luciferase
5. X-ray characterization at growth temperatures of InxGa1−xN growth by MOVPE
6. Novel system for X-ray CTR scattering measurement on in-situ observation of OMVPE growth of nitride semiconductor heterostructures
7. Increase of spectral width of stacked InAs quantum dots on GaAs by controlling spacer layer thickness
8. Highly spin-polarized electron photocathode based on GaAs–GaAsP superlattice grown on mosaic-structured buffer layer
9. Octave-spanning broad luminescence of Cr3+, Cr4+-codoped Mg2SiO4 phosphor for ultra-wideband near-infrared LEDs
10. Development of a New Laparoscopic Detection System for Gastric Cancer Using Near-Infrared Light-Emitting Clips with Glass Phosphor
11. Development of Glass Phosphor against Anti-Crone Ceramics
12. Development of New Glass Phosphor for Multimodal Artifact Metrics Applicable for Ceramics
13. In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy.
14. A Study on Anti-Clone and Authenticity Verification Technique for Ceramics: Pilot testing of New Glass Phosphor with Two Optical Features
15. Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattices.
16. 1S-A1-2Innovate Electron Beam by GaN Semiconductor Photocathodes Conducive to Single Shot Imaging
17. Multimodal Artifact Metrics for Valuable Resin Card
18. Anti-counterfeiting Technique for Molded Resin Articles
19. Electron Beam Sources using InGaN Semiconductor Photocathodes for Single-shot Imaging Electron Microscope
20. Luminescence properties of Tm2O3-doped oxide glasses for NIR wideband light source
21. New photocathode using ZnSe substrates with GaAs active layer
22. Mutimodal Artifact Metrics and its Applicability Experiments
23. Proposal and Evaluation of a Walking Support System for Visually Impaired People
24. Luminescence properties of Pr6O11-doped and PrF3-doped germanate glasses for wideband NIR phosphor
25. A Study of Baking Visually Unrecognizable Two-Dimensional Code onto Valuable Pottery and Porcelain Products
26. Proposal and Evaluation of the Utilization of a Baking Method to Apply Visually Unrecognizable Two-Dimensional Code onto Valuable Ceramic Products
27. Interaction of Nd dopants with broadband emission centers in Bi2O3–B2O3glass: local energy balance and its influence on optical properties
28. Development of a new detection device using a glass clip emitting infrared fluorescence for laparoscopic surgery of gastric cancer
29. Corrigendum to: Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy [J. Cryst. Growth 407 (2014) 68–73]
30. Development of new devices for detection of gastric cancer on laparoscopic surgery using near-infrared light
31. Legal Compliance of Intellectual Property Rights and Morals of Engineers
32. A Study of Applying Artifact-Metrics Technology and Baking Invisible Information onto Valuable Porcelain Products
33. Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy
34. Luminescence properties of PrO-doped and PrF-doped germanate glasses for wideband NIR phosphor.
35. Local Structure of Pr, Nd, and Sm Complex Oxides and Their X-ray Absorption Near Edge Structure Spectra
36. Ultrawide-band near-infrared light source over 1 mW by Sm3+,Pr3+-codoped glass phosphor combined with LED
37. The New Verification Method of Authenticity for Pottery and Porcelain Products: Application of the Artifact-Metrics Technology
38. In situ X-ray Reflectivity Measurements on Annealed InxGa1-xN Epilayer Grown by Metalorganic Vapor Phase Epitaxy
39. Effect of compressive strain relaxation on surface morphology in GaAsP growth on GaP substrate
40. In situ X-ray measurements of MOVPE growth of InxGa1−xN single quantum wells
41. Fabrication of wideband near‐infrared phosphor by stacking Sm 3+ ‐doped glass on Pr 3+ ‐doped glass phosphors
42. Wideband near‐infrared LED with over 1 mW power by stacked InAs quantum dots/GaAs
43. Study of Countermeasure Systems for Leaks of Onscreen Content by Digital Video/Camera Shooting
44. X-ray characterization of GaN and related materials at growth temperatures–system design and measurements
45. Study of Countermeasures for Content Leaks by Video Recording
46. Wideband near‐infrared phosphor by stacking Sm 3+ doped glass underneath Yb 3+ , Nd 3+ co‐doped glass
47. Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattices
48. 8.5: Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattices
49. Strain of GaAs/GaAsP Superlattices Used as Spin-Polarized Electron Photocathodes, Determined by X-Ray Diffraction
50. High Power and High Resolution Near-Infrared Light Source for Optical Coherence Tomography Using Glass Phosphor and Light Emitting Diode
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