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106 results on '"Fuchi, Shingo"'

13. In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy.

Author

Ju, Guangxu, Fuchi, Shingo, Tabuchi, Masao, and Takeda, Yoshikazu

Subjects
*INDIUM, *VAPOR phase epitaxial growth, *X-ray research, *CRYSTAL growth, *PARTICLES (Nuclear physics), *SCANNING electron microscopes
Abstract

The indium supplied on c-plane GaN templates using Metal organic vapor phase epitaxy was studied by in situ X-ray reflectivity (XRR) at 800 °C. The presence of liquid indium layers on the GaN (0001) surface was demonstrated using data-fitting of XRR measurements, ex situ atomic force microscope, auger electron spectroscopy, and cross-sectional scanning electron microscope. These measurements demonstrated that a liquid indium layer coexisted with indium droplets on top of the GaN (0001) surface at 800 °C. The liquid indium film thicknesses increased with increasing TMIn supply time and did not change during cooling from 800 °C to room temperature. [ABSTRACT FROM AUTHOR]

Published
2013
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15. Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattices.

Author

Xiuguang Jin, Maeda, Yuya, Sasaki, Toshio, Arai, Shigeo, Ishida, Yoichi, Kanda, Masataka, Fuchi, Shingo, Ujihara, Toru, Saka, Takashi, and Takeda, Yoshikazu

Subjects
ELECTRONS, SUPERLATTICES, TRANSMISSION electron microscopy, PHOTOCATHODES, POLARIZATION (Electricity)
Abstract

The spin-polarization of electrons from the GaAs/GaAsP superlattice on a GaAs substrate (∼90%) is higher than that from the same superlattice on a GaP substrate (∼60%). Transmission electron microscopy and atomic force microscopy observations revealed that stacking faults were the main defects in the superlattice on the GaAs substrate, while local thickness modulation of the superlattice layers was prominent in the superlattice on the GaP substrate. According to the density of stacking faults and the areal ratio of the thickness modulation, it was concluded that the thickness modulation in the superlattice was the main reason for the spin-polarization reduction in the photocathode on the GaP substrate. Growth of a thin GaAs layer on a GaP substrate prior to superlattice growth eliminated the thickness modulation and the spin-polarization was recovered to 90%. [ABSTRACT FROM AUTHOR]

Published
2010
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34. Luminescence properties of PrO-doped and PrF-doped germanate glasses for wideband NIR phosphor.

Author

Fuchi, Shingo, Ishikawa, Wataru, Nishimura, Seiya, and Takeda, Yoshikazu

Subjects
LUMINESCENCE, GLASS, PHOSPHORS, CHEMICAL synthesis, FLUORIDE glasses
Abstract

We have synthesized 0.12PrO-45SbO-10ZnO-45GeO glass and 0.72PrF-45SbO-10ZnO-45GeO as a wideband near-infrared phosphor for LED-based light-sources. We have achieved an ultra-wideband luminescence from 700 to 1100 nm from both samples. Luminescence intensity around 730 nm (P → F transition) was lower than that around 1040 nm (D → F transition) in the PrO-doped sample. On the other hand, luminescence intensity around 730 nm was higher than that around 1040 nm in PrF-doped sample. These results indicated that a phonon energy around Pr ions should be decreased by substituting PrF for PrO. An output power of the PrF-doped sample was 1.5 times higher than that of the PrO-doped sample. A measured fluorescence lifetime of D level in the PrF-doped sample was shorter than that in the PrO-doped one. These results indicated that oxide glasses doped with rare-earth fluoride should be useful for our practical wideband NIR phosphor. [ABSTRACT FROM AUTHOR]

Published
2017
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49. Strain of GaAs/GaAsP Superlattices Used as Spin-Polarized Electron Photocathodes, Determined by X-Ray Diffraction

Author

Saka, Takashi, primary, Ishida, Yoichi, additional, Kanda, Masataka, additional, Jin, Xiuguang, additional, Maeda, Yuya, additional, Fuchi, Shingo, additional, Ujihara, Toru, additional, Takeda, Yoshikazu, additional, Matsuyama, Tetsuya, additional, Horinaka, Hiromichi, additional, Kato, Toshihiro, additional, Yamamoto, Naoto, additional, Mano, Atsushi, additional, Nakagawa, Yasuhide, additional, Kuwahara, Makoto, additional, Okumi, Shoji, additional, Nakanishi, Tsutomu, additional, Yamamoto, Masahiro, additional, Ohshima, Takashi, additional, Kohashi, Teruo, additional, Suzuki, Masahiko, additional, Hashimoto, Michihiro, additional, Yasue, Tsuneo, additional, and Koshikawa, Takanori, additional

Published
2010
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