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133 results on '"Fuccio Cristiano"'

1. Multiscale modeling of ultrafast melting phenomena

Author: Gaetano Calogero, Domenica Raciti, Pablo Acosta-Alba, Fuccio Cristiano, Ioannis Deretzis, Giuseppe Fisicaro, Karim Huet, Sébastien Kerdilès, Alberto Sciuto, and Antonino La Magna
Subjects: Materials of engineering and construction. Mechanics of materials, TA401-492, Computer software, QA76.75-76.765
Abstract: Abstract Ultraviolet Nanosecond Laser Annealing (LA) is a powerful tool for both fundamental investigations of ultrafast, nonequilibrium phase-change phenomena and technological applications (e.g., the processing of 3D sequentially integrated nano-electronic devices) where strongly confined heating and melting is desirable. Optimizing the LA process along with the experimental design is challenging, especially when involving complex 3D-nanostructured systems with various shapes and phases. To this purpose, it is essential to model critical nanoscale physical LA-induced phenomena, such as shape changes or formation and evolution of point and extended defects. To date, LA simulators are based on continuum models, which cannot fully capture the microscopic kinetics of a solid–liquid interface. In this work a fully atomistic LA simulation methodology is presented, based on the parallel coupling of a continuum, finite elements, μm-scale electromagnetic-thermal solver with a super-lattice Kinetic Monte Carlo atomistic model for melting. Benchmarks against phase-field models and experimental data validate the approach. LA of a Si(001) surface is studied varying laser fluence and pulse shape, assuming both homogeneous and inhomogeneous nucleation, revealing how liquid Si nuclei generate, deform and coalesce during irradiation. The proposed methodology is applicable to any system where the atom kinetics is determined by a strongly space- and time-dependent field, such as temperature or strain.
Published: 2022
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2. Comparison of annealing quality after 3e15/cm2 50 keV BF2+ implant between rapid thermal annealing and furnace annealing

Author: Leonhard Sturm-Rogon, Alexander Burenkov, Fuccio Cristiano, Dirk Eckert, Anna Johnsson, Karl Neumeier, Peter Pichler, Ignaz Eisele, and Wilfried Lerch
Subjects: Mechanics of Materials, Mechanical Engineering, General Materials Science, Condensed Matter Physics
Abstract: Low leakage diodes are necessary in order to manufacture high-quality variable capacitance diodes (varicaps), which are used in voltage-controlled oscillators. Junction leakage current affects the single sideband noise of the oscillator by up-conversion of 1/f and shot noise (Chan et al. in IEEE Trans Electron Devices 54(9):2570–2573, 2007, https://doi.org/10.1109/TED.2007.903201). Several sources show higher leakage current for RTP compared to furnace anneal (Lunnon et al. in J Electrochem Soc 132(10):2473, 1985, https://doi.org/10.1149/1.2113602, Gramenova et al. in J Electrochem Soc 146(1):359, 1999, https://doi.org/10.1149/1.1391613, Mikoshiba et al. in Jpn J Appl Phys, 1986, https://doi.org/10.1143/jjap.25.l631). In our experiments, we found lower leakage currents for RTP compared to furnace annealing. We present results from annealing experiments where we compare three annealing conditions with and without oxidizing annealing conditions. Graphical abstract
Published: 2022
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3. Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime

Author: Meiling Zhang, Jean-Marie Poumirol, Nicolas Chery, Clément Majorel, Rémi Demoulin, Etienne Talbot, Hervé Rinnert, Christian Girard, Fuccio Cristiano, Peter R. Wiecha, Teresa Hungria, Vincent Paillard, Arnaud Arbouet, Béatrice Pécassou, Fabrice Gourbilleau, Caroline Bonafos, Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Centre de microcaractérisation Raimond Castaing (Centre Castaing), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), ANR-18-CE09-0034,DONNA,Dopage à l'échelle nano(2018), and ANR-21-CE30-0042,Ti-P,Plasmons de surfaces non réciproques induit par la topologie(2021)
Subjects: Condensed Matter - Materials Science, Physics::Optics, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, semiconductor-based plasmonic, Atomic and Molecular Physics, and Optics, green dyadic method, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, Physics::Atomic and Molecular Clusters, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], silicon nanocrystals, plasmon hybridization, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Electrical and Electronic Engineering, Physics - Optics, Optics (physics.optics), few electrons regime, Biotechnology
Abstract: Using localized surface plasmon resonance (LSPR) as an optical probe we demonstrate the presence of free carriers in phosphorus doped silicon nanocrystals (SiNCs) embedded in a silica matrix. In small SiNCs, with radius ranging from 2.6 to 5.5 nm, the infrared spectroscopy study coupled to numerical simulations allows us to determine the number of electrically active phosphorus atoms with a precision of a few atoms. We demonstrate that LSP resonances can be supported with only about 10 free electrons per nanocrystal, confirming theoretical predictions and probing the limit of the collective nature of plasmons. We reveal the appearance of an avoided crossing behavior linked to the hybridization between the localized surface plasmon in the doped nanocrystals and the silica matrix phonon modes. Finally, a careful analysis of the scattering time dependence versus carrier density in the small size regime allows us to detect the appearance of a new scattering process at high dopant concentration, which can be explained by P clustering inside the SiNCs.
Published: 2022
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4. Hyperdoped Si nanocrystals embedded in silica for infrared plasmonics

Author: Meiling Zhang, Jean-Marie Poumirol, Nicolas Chery, Hervé Rinnert, Alaa E. Giba, Rémi Demoulin, Etienne Talbot, Fuccio Cristiano, Teresa Hungria, Vincent Paillard, Fabrice Gourbilleau, Caroline Bonafos, Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Centre de microcaractérisation Raimond Castaing (Centre Castaing), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université Toulouse III - Paul Sabatier (UT3), Nano-Optique et Nanomatériaux pour l'optique (CEMES-NeO), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), China Scholarship Council (201801810118), and ANR-18-CE09-0034,DONNA,Dopage à l'échelle nano(2018)
Subjects: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science
Abstract: International audience; Plasmonic hyperdoped Si nanocrystals embedded in silica synthesized via a combination of sequential low energy ion implantation and rapid thermal annealing. We show that phosphorus dopants are incorporated into the nanocrystal cores at concentrations up to six times higher than P solid solubility in bulk Si by combining 3D mapping with atom probe tomography and analytical transmission electron microscopy. We shed light on the origin of nanocrystal growth at high P doses, which we attribute to Si recoiling atoms generated in the matrix by P implantation, which likely increase Si diffusivity and feed the Si nanocrystals. We show that dopant activation enables partial nanocrystal surface passivation that can be completed by forming gas annealing. Such surface passivation is a critical step in the formation of plasmon resonance, especially for small nanocrystals. We find that the activation rate in these small doped Si nanocrystals is the same as in bulk Si under the same doping conditions.
Published: 2023
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5. Structural and Electrical Characterizations of BiSb Topological Insulator Layers Epitaxially Integrated on GaAs

Author: Dima Sadek, Richard Daubriac, Corentin Durand, Richard Monflier, Quentin Gravelier, Arnaud Proietti, Fuccio Cristiano, Alexandre Arnoult, Sébastien R. Plissard, Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Service Instrumentation Conception Caractérisation (LAAS-I2C), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Centre de microcaractérisation Raimond Castaing (Centre Castaing), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP)
Subjects: Antimony, Topological Insulator, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], Chalcogenide, GaAs, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.CRIS]Chemical Sciences/Cristallography, General Materials Science, General Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Condensed Matter Physics, Bismuth
Abstract: International audience; Topological insulators (TIs) are known as promising materials for new nanoelectronics and spintronics applications thanks to their unique physical properties. Among these TIs, bismuth antimony alloys (Bi1–xSbx) remain the most interesting because their electronic band structure can be controlled by changing the stoichiometry, the thickness, or the temperature. However, integrating these materials on an industrial substrate remains a challenge. Here, we investigate the growth, structural, and electrical properties of BiSb materials epitaxially deposited on industrial GaAs(001) substrates. We report the influence of key growth parameters such as temperature, antimony composition, thickness, and growth rate on the crystal quality. We manage to optimize the growth conditions while keeping the Bi1–xSbx composition within the TI range. Despite the large lattice mismatch and different crystalline matrices between the deposited material and the substrate, we successfully grow high-quality BiSb(0001) films. For optimized growth conditions, n-type semiconductor behavior of the BiSb layer is demonstrated at temperatures above 100 K. The material band gap calculated from our transport measurements corresponds to that mentioned in the literature. A change of the carrier type from bulk electrons to surface holes is observed when decreasing the temperature below 55 K. Hole mobilities up to 7620 cm2/(V·s) are extracted. This is, to our knowledge, the first demonstration of TI integrated on an industrial substrate keeping its protected surface states.
Published: 2022
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6. Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin Films

Author: Remi Demoulin, Richard Daubriac, Louis Thuries, Emmanuel Scheid, Fabien Roze, Fuccio Cristiano, Toshiyuki Tabata, Fulvio Mazzamuto, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), and SCREEN-LASSE
Subjects: laser anneal, copper, FOS: Physical sciences, BEOL, Applied Physics (physics.app-ph), Physics - Applied Physics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract: The need of surface-localized thermal processing is strongly increasing especially w.r.t three-dimensionally (3D) integrated electrical devices. UV laser annealing (UV-LA) technology well addresses this challenge. Particularly UV-LA can reduce resistivity by enlarging metallic grains in lines or thin films, irradiating only the interconnects for short timescales. However, the risk of failure in electrical performance must be correctly managed, and that of UV-LA has not been deeply studied yet. In this work microsecond-scale UV-LA is applied on a stack comparable to an interconnect structure (dielectric/Cu/Ta/SiO2/Si) in either melt or sub-melt regime for grain growth. The failure modes such as (i) Cu diffusion into SiO2, (ii) O incorporation into Cu, and (iii) intermixing between Cu and Ta are investigated., Accepted Paper for the IEEE International Interconnect Technology Conference (IITC) 2022
Published: 2022
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7. Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy.

Author: Andrew C. Lamb, J. F. W. Schiz, J. M. Bonar, Fuccio Cristiano, Peter Ashburn, Stephen Hall, and Peter L. F. Hemment
Published: 2001
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8. Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO 2

Author: Anne Hémeryck, Nicolas Salles, Layla Martin-Samos, Sylvain Joblot, Antoine Jay, Pierre-Louis Julliard, Thomas Cabout, Fuccio Cristiano, Frederic Monsieur, Denis Rideau, Nicolas Guitard, Miha Gunde, Équipe Modélisation Multi-niveaux des Matériaux (LAAS-M3), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), STMicroelectronics [Crolles] (ST-CROLLES), CNR Istituto Officina dei Materiali (IOM), Consiglio Nazionale delle Ricerche [Roma] (CNR), European Project: 871813,H2020-EU.2.1.1. - INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT) ,MUNDFAB (2020), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), and National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR)
Subjects: 010302 applied physics, [PHYS]Physics [physics], Materials science, TCAD, Silicon, Monte Carlo method, chemistry.chemical_element, 02 engineering and technology, Kinetic Monte Carlo, 021001 nanoscience & nanotechnology, process simulation, 01 natural sciences, Computational physics, chemistry, Ab initio quantum chemistry methods, 0103 physical sciences, Boron-Oxygen complex, Process simulation, Diffusion (business), 0210 nano-technology, Technology CAD, Refining (metallurgy)
Abstract: International audience; The diffusion path, formation energies and possible charge states of O i , O 2i and BO 2 complex are determined using ab initio calculations. We propose an ab initio based calibration for Kinetic Monte Carlo model with the aim to make possible the simulation of the formation of the BO 2 complex for process simulation.
Published: 2021
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9. Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate

Author: Fuccio Cristiano, Emmanuelle Daran, Arnaud Proietti, Corentin Durand, Quentin Gravelier, Sebastien Plissard, Benjamin Reig, Alexandre Arnoult, Daya S. Dhungana, Roland Coratger, Dima Sadek, Pier-Francesco Fazzini, Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Surfaces, Interfaces et Nano-Objets (CEMES-SINanO), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Centre de microcaractérisation Raimond Castaing (CMCR), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Laboratoire de physique et chimie des nano-objets (LPCNO), Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC), ANR-17-PIRE-0001,Hybrid,Hybrid Materials for Quantum Science and Engineering(2017), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Centre de microcaractérisation Raimond Castaing (Centre Castaing), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Fédération de recherche « Matière et interactions » (FeRMI), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Magnetoresistive random-access memory, Materials science, Condensed matter physics, Spintronics, Magnetoresistance, Chalcogenide, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), [CHIM.MATE]Chemical Sciences/Material chemistry, Conductivity, 021001 nanoscience & nanotechnology, 01 natural sciences, Bismuth, chemistry.chemical_compound, chemistry, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], Topological insulator, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.CRIS]Chemical Sciences/Cristallography, General Materials Science, 010306 general physics, 0210 nano-technology
Abstract: International audience; Bismuth-Antimony alloys () is the first reported 3D Topological Insulator (TI). Among many TIs reported to the date, it remains the most promising for spintronic applications thanks to its large conductivity, its colossal spin Hall angle, and the possibility to build low current spin-orbit-torque (SOT) magnetoresistive random access memories (MRAM). Nevertheless, the 2D integration of TIs on industrial standards is lacking. In this work, we report the inte
Published: 2021
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10. Self-catalyzed InAs nanowires grown on Si: the key role of kinetics on their morphology

Author: Daya S Dhungana, Nicolas Mallet, Pier-Francesco Fazzini, Guilhem Larrieu, Fuccio Cristiano, Sébastien R Plissard, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Laboratoire de physique et chimie des nano-objets (LPCNO), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Fédération de recherche « Matière et interactions » (FeRMI), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)
Subjects: MBE, Mechanical Engineering, CMOS, Bioengineering, [CHIM.MATE]Chemical Sciences/Material chemistry, General Chemistry, nanowires, InAs, Mechanics of Materials, hydrogen, [CHIM.CRIS]Chemical Sciences/Cristallography, General Materials Science, surface preparation, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, patterned substrates
Abstract: Integrating self-catalyzed InAs nanowires on Si(111) is an important step toward building vertical gate-all-around transistors. The complementary metal oxide semiconductor (CMOS) compatibility and the nanowire aspect ratio are two crucial parameters to consider. In this work, we optimize the InAs nanowire morphology by changing the growth mode from Vapor–Solid to Vapor–Liquid–Solid in a CMOS compatible process. We study the key role of the Hydrogen surface preparation on nanowire growths and bound it to a change of the chemical potential and adatoms diffusion length on the substrate. We transfer the optimized process to patterned wafers and adapt both the surface preparation and the growth conditions. Once group III and V fluxes are balances, aspect ratio can be improved by increasing the system kinetics. Overall, we propose a method for large scale integration of CMOS compatible InAs nanowire on silicon and highlight the major role of kinetics on the growth mechanism.
Published: 2022
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11. Stress relaxation and dopant activation in nsec laser annealed SiGe

Author: R. Daubriac, Sebastien Kerdiles, P. Acosta Alba, L. Dagault, Emmanuel Scheid, R. Monflier, A-S. Royet, Fuccio Cristiano, R. Demoulin, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Service Instrumentation Conception Caractérisation (LAAS-I2C), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)
Subjects: Recrystallization (geology), Materials science, Dopant, business.industry, Annealing (metallurgy), Doping, 02 engineering and technology, Dopant Activation, 010402 general chemistry, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, 0104 chemical sciences, law.invention, Ion implantation, Semiconductor, law, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business
Abstract: International audience; Defect evolution and dopant activation are intimately related to the use of ion implantation and annealing, traditionally used to dope semiconductors during device fabrication. However, during the last decade, the increased difficulties to maintain the transistor miniaturization pace have led to a diversification of both the basic device architecture and processes. In this context, the recent advances in nanosecond laser annealing have opened the way to solve a wide spectrum of difficult challenges in semiconductor technology, well beyond the traditional source/drain fabrication issues. Indeed, thanks to its low thermal budget, laser annealing is very attractive not only for the achievement of abrupt and highly doped junctions, but more generally for all semiconductor technologies in which dopants need to be activated while preserving the integrity of the surrounding areas, as in the case of CMOS backside imagers or 3D integration technologies. After giving an overview of some relevant published studies in this domain [1], we will present our recent investigations focused on damage and strain evolution in SiGe and their impact on dopant distribution and electrical activation during nanosecond laser thermal annealing. These will concern compressively strained SiGe layers (with Ge fraction, x, ranging from 0 to 0.4), which were submitted to Ultraviolet Nanosecond Laser Anneal (UV-NLA) at different energies. The impact of the process parameters on the annealing regimes and on the relaxation of the initial compressive strain are investigated in detail. Optimised conditions to achieve pseudomorphic, defect-free structures are identified, which depend on the elastic energy stored in the recrystallized structure (Fig. 1). The impact of the structural modifications induced by UN-NLA on the efficiency of dopant activation is also discussed. Finally, Ge segregation towards the surface occurs during melt laser annealing, resulting in the formation of a Ge-rich surface layer (Fig. 2). Such pseudomorphic SiGe layers with a graded composition and a Ge-rich surface may find promising applications such as contact resistance lowering in doped layers. In the last part, some recent investigations of phosphorus-doped ultra-thin SOI layers submitted to UV-NLA will be presented. Their recrystallization is investigated as a function of the implanted dose as well as the laser energy density, while the best conditions to achieve high dopant activation (up to ~2 % at.) are identified.
Published: 2021
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12. Impact of Nanosecond Laser Annealing on the Electrical Properties of Highly Boron-Doped Ultrathin Strained Si0.7Ge0.3 Layers

Author: Richard Daubriac, Rémi Demoulin, Sebastien Kerdiles, Pablo Acosta Alba, Jean-Michel Hartmann, Jean-Paul Barnes, Pawel Michałowski, Fransesca Chiodi, Etienne Talbot, Emmanuel Scheid, Antonino La Magna, and Fuccio Cristiano
Abstract: The CMOS scaling beyond 10 nm technology node requires high active dopant concentrations in source/drain modules to minimize contact resistance. Pulsed laser annealing has been targeted by chip manufacturers as a future option to enhance the activation level inside highly doped SiGe:B and Si:P regions, mostly used in PMOS and NMOS transistor fabrication, respectively. Indeed, this annealing process allows reaching high temperatures (above melt threshold), locally (~100nm below the surface) and with extremely fast temperature ramp rates (>109 °C/s), so that high doping levels have been demonstrated both in pure Si and Ge [1]. In a recent study, structural investigations allowed identifying the best conditions to obtain fully strained and defect-free undoped SiGe layers by liquid phase epitaxial regrowth (LPER) [2]. In this work, we report an analysis on the activation of boron dopants in similar layers. In-situ boron-doped 30 nm thick pseudomorphic Si0.7Ge0.3 layers were grown on p-type bulk Si (100) by CVD. Three different boron concentrations were incorporated inside these layers: 7.8x1019 (A), 1.4x1020 (B) and 2.3x1020 cm-3 (C). By combining the boron chemical profiles with the corresponding Hall effect measurements (Hall scattering factor: 0.35), it was possible to estimate the activation rate inside the as-grown strained SiGe layers and the impact of the possible inactive dopants on the transport properties. From the lowest to the highest boron chemical concentration, we found activation rates of ~100%, ~80% and ~60%, with no significant carrier mobility degradation, even in the sample with the highest fraction of inactive dopants. The SiGe layers were subsequently laser annealed in a SCREEN-LT3100 platform operating at 308 nm (XeCl laser) with a pulse duration around 160 ns. The laser energy densities (ED) ranged from 1.20 to 2.40 J/cm2 in order to investigate all the various annealing regimes. Results obtained using several characterization techniques were combined to determine the laser annealing regimes, quantify surface roughness and assess the layers’ composition, strain and crystalline quality. These results were compared to electrical measurements performed to analyse the evolution of the electrical parameters as a function of the laser anneal conditions, particularly the activation rate. For the lowly-doped and fully activated layer (A), the sheet resistance increases rapidly at the melt threshold (1.5 J/cm2, cf. Fig. 1, red curve), concomitantly with the appearance of a partial relaxation inside the layer (Fig. 2) and the formation of extended defects. The defects may induce a local dopant deactivation, while strain relaxation can result in a modification of the transport properties of the material (modified Hall scattering factor). Both phenomena can be therefore responsible for the observed increase of the sheet resistance. In contrast, for laser EDs allowing complete melt of the layer (i.e. beyond 2.0 J/cm2), the sheet resistance decreases with increasing ED and full activation is achieved (Fig. 3, red curve) together with strain recovery (Fig. 2) and no observable defects. For the highly-doped and partially activated layer (C), partial relaxation also occurs at the melt threshold (Fig. 2). However, thanks to the strain compensation effect of the small boron atoms, the relaxation level is lower compared to the lowly-doped sample and more quickly recovered when increasing the ED (no defects observed at 1.95 J/cm2, Fig. 4). In addition, the sheet resistance is found to continuously decrease as a function of the ED (Fig. 1, blue curve) independently of the strain state of the structure. This suggests that, in addition to the previously described phenomena, the initially inactive dopants are progressively incorporated into substitutional positions by LPER. Indeed, when full melt and strain recovery is achieved, a 100% dopant activation is also observed (Fig. 3, blue curve). Characterizations made on sample B suggest a similar behaviour to that of sample C. Finally, further results will be reported from additional experiments aiming at (i) better understanding the impact of strain relaxation on dopant activation and (ii) optimizing the laser annealing process to avoid relaxation. These experiments include the use of a shorter laser pulse for the annealing of the strained SiGe layers, as well as the comparison with results obtained from fully-relaxed boron-doped SiGe annealed under similar laser conditions. Acknowledgements: This work was supported by the European Union’s Horizon 2020 research and innovation program under grant agreement No. 871813 MUNDFAB. References: [1] F. Cristiano, A. La Magna, Laser annealing processes in semiconductor technology: Theory, modeling, and applications in nanoelectronics, Elsevier 2021 (9780128202555). [2] L. Dagault & al., Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si1−xGex/Si epilayers, ASS, Vol. 527, 146752 (10.1016/j.apsusc.2020.146752). Figure 1
Published: 2022
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13. Impact of the Liquid/Solid Interface on the Strain State of Si1-XGex Layers Processed By Nanosecond Laser Annealing

Author: Rémi Demoulin, Richard Daubriac, Sebastien Kerdiles, Pablo Acosta Alba, Jean-Michel Hartmann, Fransesca Chiodi, Emmanuel Scheid, Antonino La Magna, and Fuccio Cristiano
Abstract: Si1-xGex alloys took a major place in the microelectronic field because of their potential for MOSFETs devices. These last decades, the miniaturisation of these electronic devices allowed optimising their performances. However, this also highlighted new issues concerning the use of conventional Rapid Thermal Annealing for the fabrication processes of such materials. Nowadays, Nanosecond Laser Annealing (NLA) has attracted considerable attention thanks to its low thermal budget. It has been showed that NLA allows performing high temperature annealing localised at the surface, keeping the underlying material at low temperature, which may allow a diversification of device architectures such as 3D integration schemes. Moreover, this process is interesting for the formation of source/drain junctions as dopant concentrations higher than their solubility limit can be incorporated in Si or Ge. However, the impact of NLA on the structure of Si1-xGex materials is not fully understood, especially concerning the melting regime of NLA. Recently, we have investigated the structural evolution induced by NLA in 30 nm-thick strained Si1-xGex layers, elaborated by RPCVD [1]. These investigations have highlighted a strong correlation between the roughness exhibited by the interface between the melted and unmelted areas (referred to as liquid/solid (l/s) interface) and the strain state of the Si1-xGex layers. In particular, in the case of a flat l/s interface, the strain state is determined by the elastic energy stored in the Si1-xGex layer. In contrast, a rough l/s interface always leads to the layer relaxation. In the present study, we carried out a detailed investigation of the evolution of the l/s interface roughness as a function of several experimental parameters (Ge content, doping level, pulse duration). The objective is twofold: (i) to improve our understanding of the origin of the l/s interface roughness and its impact on the strain state of Si1-xGex layers and (ii) to identify the best process conditions to achieve fully strained layers after NLA in the melt regime. As a first step, B-doping has been used to modify the initial strain state of the Si1-xGex layers. Indeed, due to the low covalent radius of B atoms, the introduction of high B concentrations results in strain compensation. To achieve that, strained Si0.7Ge0.3 layers were doped with B atoms during grown. The Z-contrast observed on STEM-HAADF images allowed to quantify the l/s interface roughness and determine its evolution depending on the B-doping level. As shown in Fig.1, it has been evidenced that the flattening of the l/s interface at high B-doping allows to avoid the formation of strain relieving defects in the whole layer. Here, the B-doping is expected to reduce the elastic energy density stored in the Si1-xGex layer, preventing the formation of defects. As a second step, to understand the connection between the l/s interface roughness and the formation of defects, similar investigations have been made using 700 nm-thick fully relaxed Si1-xGex layers. Removing the initial strain may allow to decorrelate the different phenomena inducing the formation of a rough l/s interface. The firsts results evidenced a similar Ge redistribution as in strained Si1-xGex for melt depth up to 115 nm (Fig.2), while the l/s interface roughness was low regardless of the melt depth. However, at deeper melt depths, the structure of these layers is strongly modified. In particular, the roughness of the l/s interface induces lateral Ge segregation during resolidification, leading to pure Ge “walls” in the regrown layers. The origin of such laser-induced self-organisation will be discussed in terms of the elastic energy accumulated in these Si1-xGex layers during resolidification and compared to the physical models proposed in the litterature [2]. As a last step, effects of NLA on strained Si1-xGex layers will be investigated for different laser pulse durations. Indeed, the formation of a rough l/s interface may also be linked to the nano-structuration of the surface during the so-called surface melt regime. Lowering the pulse duration is expected to minimize the size of these structures and avoid the strain relaxation of the Si1-xGex layers. In summary, the results obtained are expected to provide a better insight on the different phenomena occurring when a melt laser process is carried out on Si1-xGex layers and contribute to the optimisation of this annealing technique in view of its application in the fabrication of future nanoelectronics devices. Acknowledgements: This work was supported by the European Union’s Horizon 2020 research and innovation program under grant agreement No. 871813 MUNDFAB. References: [1] Dagault et al. App. Surf. Sci. 527, 146752 (2020) [2] Weizman et al. J. Appl. Phys. 103, 093536 (2008) Figure 1
Published: 2022
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14. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors

Author: Enrico Napolitani, Ray Duffy, Fuccio Cristiano, HAL-LAAS, LAAS, Tyndall National Institute [Cork], Universita degli Studi di Padova, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Università degli Studi di Padova = University of Padua (Unipd), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)
Subjects: 010302 applied physics, Fabrication, Recrystallization (geology), Materials science, Dopant, Annealing (metallurgy), business.industry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Doping, 02 engineering and technology, Dopant Activation, 021001 nanoscience & nanotechnology, 01 natural sciences, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Amorphous solid, Semiconductor, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: This chapter presents a review of the most relevant experimental results demonstrating the ability of nanosecond laser annealing to achieve dopant activation well above the solid solubility limit. Several distinctive materials science issues related to laser kinetics in the melt regime are reviewed, including melt temperature differences between amorphous and crystalline phases, melt front propagation, melt duration, recrystallization velocity, and solute trapping. Finally, the morphology, crystalline nature, and residual damage of Si, Ge, and SiGe materials submitted to nanosecond laser anneals in the melt regime are discussed according to the material fabrication history as well as the laser anneal conditions. Due to the richness and relevance of numerous seminal works published in the late 1970s–the early 1980s in this domain, the results reported in this chapter are mainly presented in the form of a historical review and perspective. In particular, the concepts of above-equilibrium solubility and thermal stability are first discussed in general for Si and Ge, while for both materials, the main results are structured in terms of Group III elements (p-type dopants) and Group V elements (n-type dopants). Group VI elements for n-type doping of Si are also considered.
Published: 2021

15. Preface

Author: Fuccio Cristiano and Antonino La Magna
Published: 2021
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16. Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: Investigation of interfacial and structural properties

Author: Emmanuel Scheid, Ahmet Lale, Pierre Temple-Boyer, Fuccio Cristiano, Jérôme Launay, Lucien Datas, Benjamin Reig, Équipe MICrosystèmes d'Analyse (LAAS-MICA), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Centre de microcaractérisation Raimond Castaing (CMCR), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Équipe MICrosystèmes d'Analyse ( LAAS-MICA ), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] ( LAAS ), Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ), Équipe Matériaux et Procédés pour la Nanoélectronique ( LAAS-MPN ), Centre interuniversitaire de recherche et d'ingenierie des matériaux ( CIRIMAT ), Institut National Polytechnique [Toulouse] ( INP ) -Université Toulouse III - Paul Sabatier ( UPS ), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique ( CNRS ), Service Techniques et Équipements Appliqués à la Microélectronique ( LAAS-TEAM ), F2ME, Laboratoire Pluridisciplinaire de Recherche en Ingénierie des Systèmes, Mécanique et Energétique ( PRISME ), Ecole Nationale Supérieure d'Ingénieurs de Bourges ( ENSI Bourges ) -Université d'Orléans ( UO ) -Ecole Nationale Supérieure d'Ingénieurs de Bourges ( ENSI Bourges ) -Université d'Orléans ( UO ), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Centre de microcaractérisation Raimond Castaing (Centre Castaing), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP)
Subjects: Materials science, [ SPI.MAT ] Engineering Sciences [physics]/Materials, Alumina, Oxide, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 01 natural sciences, chemistry.chemical_compound, Atomic layer deposition, Aluminium, PE-ALD, Al2O3, 0103 physical sciences, [ SPI ] Engineering Sciences [physics], Materials Chemistry, Thin film, Aluminium oxide, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Silicon oxide, Plasma-enhanced atomic layer deposition, 010302 applied physics, Aluminium oxides, Physical properties, Interfacial properties, Metals and Alloys, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Chemical engineering, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology
Abstract: International audience; Aluminium oxide (Al 2 O 3) films were deposited on silicon substrates using plasma-enhanced atomic layer de-position (PE-ALD) technique with tri-methyl-aluminium TMA (Al(CH 3) 3) and dioxygen (O 2) as precursors. PE-ALD experiments were performed in order to (i) investigate the interfacial properties between the silicon sub-strate and the alumina layer, and (ii) understand the impact of growth and crystallization phenomena on the Al 2 O 3 films properties (structural, optical, mechanical, dielectric and etch). The formation of oxide-based transition layers, either silicon oxide SiO 2 and/or aluminosilicate Al x Si y O, was evidenced for the TMA/O 2 PE-ALD process. Based on these results, it appears that no substrate-enhanced growth occurs at the early stages of the growth process, as assumed in previous reports. Thus, constant growth rate (0.08 nm per cycle) and re-fractive index (1.64 at a 450 nm wavelength) were obtained for the Al 2 O 3 layer deposited at 300 °C. Finally, thermal annealing experiments were performed on these films, evidencing the influences of atomic structural rearrangement and crystallization on the Al 2 O 3 film main characteristics: interface steepness, atomic structure, refractive index, residual stress, dielectric constant and etch rate.
Published: 2018
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17. Composition and Strain Evolution of Undoped Si0.8Ge0.2 Layers Submitted to UV-Nanosecond Laser Annealing

Author: Adeline Grenier, Jean-Paul Barnes, Fuccio Cristiano, Than Tra Nguyen, Jean-Michel Hartmann, Pablo Acosta-Alba, Patrice Gergaud, Lea Dagault, Sebastien Kerdiles, and J. Aubin
Subjects: Materials science, Annealing (metallurgy), Analytical chemistry, Nanosecond laser
Abstract: For CMOS scaling beyond 10 nm technology node, high active dopant concentrations in sources and drains are required to minimize contact resistance. Given its ability to reach high temperatures with extremely fast ramps, pulsed laser annealing is used in PMOS and NMOS transistors fabrication to obtain highly doped SiGe:B [1] and Si:P [2] regions. However, there are still few studies on the impact of nanosecond laser annealing on SiGe. We have thus investigated the behavior of thin, pseudomorphic Si0.8Ge0.2 layers submitted to ultraviolet nanosecond laser annealing in a wide range of laser energy densities. Undoped, 30 nm thick pseudomorphic Si0.8Ge0.2 layers were grown at 550°C on (100) Si substrates in a Reduced Pressure CVD reactor. They were subsequently laser annealed in a SCREEN LT-3100 platform operating at 308 nm with a 160 ns pulse duration. The laser energy density was increased from 1.40 up to 2.40 J/cm² in order to investigate various regimes, from SiGe layer sub-melt to a point at which the whole SiGe layer and part of the Si substrate reach the melt. Time Resolved Reflectometry (TRR) and SP2 haze measurements combined with Atomic Force Microscopy (AFM) were used to detect melt threshold and quantify surface roughness evolutions, respectively. High Resolution X-Ray Diffraction and Time-Of-Flight-Secondary Ions Mass Spectrometry characterizations were performed to assess layer composition, strain and crystalline quality as a function of the laser energy density. Melt threshold was detected at 1.55 J/cm² with SP2 Haze measurements (Fig.2) and at 1.58 J/cm² by TRR (Fig. 1). When increasing the laser energy density, three different regimes were identified. In the sub-melt regime, i.e. at energy densities lower than 1.55 J/cm², the annealed samples showed neither surface nor volume differences compared to the as-grown sample. For higher energy densities, part of the Si0.8Ge0.2 layer melted. At first, the melt remained very shallow: TOF-SIMS at 1.59 J/cm² (Fig.3) and Reciprocal Space Map (RSM, not shown here) were identical to those for the reference sample. However, a strong increase in haze and roughness indicated that the surface was modified. For a deeper melt (annealing at 1.8 J/cm²), the germanium was redistributed over the melted depth and segregated towards the surface, creating a top layer with a higher germanium concentration (cf. Fig.3). The solidification and segregation were accompanied by a partial relaxation of the layer up to 25% (the SiGe layer peak in Fig. 4.b is broadened due to mosaicity and not at the same Qx coordinate than that of the Si substrate) while the surface stayed rough. At higher energy density values, for instance 2.0 J/cm² (still in the partial melt regime), germanium segregation still occured and resulted in an even higher germanium concentration near the surface, up to 40%. However, the quality of the layer strongly improved compared to that of the 1.8 J/cm² sample. Roughness and haze were indeed much lower and close to their initial level. The RSM in Fig.4.c indicates that the layer is pseudomorphic, with a rather good crystalline quality, which will be further assessed by TEM observations. This sub-regime with strained SiGe layers exhibiting a high concentration of germanium near the surface could be favorable to the formation of low-resistance contacts in in-situ doped layers [2]. For higher energy densities, the whole SiGe layer and part of the Si substrate were melted: we were then in the full melt regime. For an annealing at 2.4 J/cm², the deeper melt and the intermixing resulted in the formation of a pseudomorphic 85 nm-thick Si0.93 Ge0.07 layer, with an almost uniform germanium profile. The film seems to have a very good crystalline quality as seen in Fig.4.d while RSM, Roughness and haze values were similar to those of the as-grown sample. It is therefore possible, by selecting the appropriate energy densities, to form pseudomorphic SiGe layers with a high germanium content near the surface, which would be favorable for electrical contact formation. Among all the annealing regimes, it seems to be the most promising one for further investigations with doped layers. References [1] Ni C.-N. et al., Proceedings of symposium on VLSI Technology (2016) 7480531. [2] Rosseel E. et al., ECS Transactions, 75 (8) 347-359 (2016) Figure 1
Published: 2018
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18. Laser Annealing Processes in Semiconductor Technology : Theory, Modeling and Applications in Nanoelectronics

Author: Fuccio Cristiano, Antonino La Magna, Fuccio Cristiano, and Antonino La Magna
Subjects: Semiconductors, Semiconductors--Heat treatment, Lasers--Industrial applications
Abstract: Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering. - Introduces the fundamentals of laser materials and device fabrication methods, including laser-matter interactions and laser-related phenomena - Addresses advances in physical modeling and in predictive simulations of laser annealing processes such as atomistic modeling and TCAD simulations - Reviews current and emerging applications of laser annealing processes such as CMOS technology and group IV semiconductors
Published: 2021

19. On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon

Author: Fuccio Cristiano, Luis A. Marqués, Toshiyuki Tabata, Pedro López, Antonino La Magna, Karim Huet, Iván Santos, Lourdes Pelaz, María Aboy, Departamento de Física [Minho] (DFUM), Universidade do Minho, Universidad de Valladolid [Valladolid] (UVa), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Istituto per la Microelettronica e Microsistemi [Catania] (IMM), Consiglio Nazionale delle Ricerche (CNR), SCREEN-LASSE, Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Universidade do Minho = University of Minho [Braga], Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse Capitole (UT Capitole)
Subjects: Nuclear and High Energy Physics, Phase transition, Silicon, Materials science, Annealing (metallurgy), chemistry.chemical_element, 02 engineering and technology, Silicio, Molecular dynamics, 01 natural sciences, Ion, [SPI.MAT]Engineering Sciences [physics]/Materials, Physics::Fluid Dynamics, 0103 physical sciences, 010306 general physics, Instrumentation, Dinámica molecular, Nanosecond, 021001 nanoscience & nanotechnology, [SPI.TRON]Engineering Sciences [physics]/Electronics, Laser annealing, Condensed Matter::Soft Condensed Matter, chemistry, Chemical physics, Melting point, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology
Abstract: Producción Científica, We combine focused experiments with molecular dynamics simulations to investigate in detail the formation of {001} loops in nanosecond laser-annealed silicon. We demonstrate that at temperatures close to the melting point, self-interstitial rich silicon is driven into dense liquid-like droplets that are highly mobile within the solid crystalline matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {0 0 1} loops through a liquid-to-solid phase transition in the nanosecond timescale., Ministerio de Ciencia e Innovación (Proyect TEC2014-60694-P), Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA119G18)
Published: 2019
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20. Ιn situ N 2 -NH 3 plasma pre-treatment of silicon substrate enhances the initial growth and restricts the substrate oxidation during alumina ALD

Author: Hugues Vergnes, Emmanuel Scheid, Yann Tison, Constantin Vahlas, Fuccio Cristiano, G.P. Gakis, Andreas G. Boudouvis, Brigitte Caussat, National Technical University of Athens [Athens] (NTUA), Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Laboratoire de Génie Chimique (LGC), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Institut des sciences analytiques et de physico-chimie pour l'environnement et les materiaux (IPREM), Université de Pau et des Pays de l'Adour (UPPA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre interuniversitaire de recherche et d'ingenierie des matériaux (CIRIMAT), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC), Université Toulouse III - Paul Sabatier (UPS), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UPS), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse 1 Capitole (UT1)-Université Toulouse - Jean Jaurès (UT2J)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse 1 Capitole (UT1)-Université Toulouse - Jean Jaurès (UT2J), Université de Pau et des Pays de l'Adour (UPPA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UPS), Centre National de la Recherche Scientifique - CNRS (FRANCE), Institut National Polytechnique de Toulouse - INPT (FRANCE), National Technical University of Athens - NTUA (GREECE), Université Toulouse III - Paul Sabatier - UT3 (FRANCE), Université de Pau et des Pays de l'Adour - UPPA (FRANCE), Laboratoire de Génie Chimique - LGC (Toulouse, France), and Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
Subjects: Materials science, Silicon, Matériaux, Alumina, EDX- XPS, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), Island growth, 01 natural sciences, Barrier layer, Atomic layer deposition, [CHIM.ANAL]Chemical Sciences/Analytical chemistry, 0103 physical sciences, Scanning transmission electron microscopy, Génie chimique, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, Génie des procédés, Deposition (law), 010302 applied physics, Surface and interface chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, [CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistry, [CHIM.POLY]Chemical Sciences/Polymers, chemistry, Chemical engineering, ALD, TEM, 0210 nano-technology, Layer (electronics)
Abstract: International audience; The initial substrate inhibiting island growth and the formation of an interfacial layer with uncontrollable characteristics are the two main drawbacks of the Atomic Layer Deposition (ALD) of high-k metal-oxide gate dielectrics on silicon (Si). In this paper, we investigate the ALD of Al2O3 films from trimethyl aluminum and H2O, on fluorhydric acid (HF) cleaned, as well as on HF-cleaned and in situ N2-NH3 plasma pretreated Si between 0 and 75 cycles. The films and their interface were characterized via Scanning Transmission Electron Microscopy coupled to Energy-Dispersive X-ray spectroscopy. The initial deposition is clearly increased on the pretreated surfaces, obtaining a linear ALD regime even after 5 ALD cycles, compared to several tens of cycles needed on HF-cleaned Si. Furthermore, a SixNy layer is formed by the N2-NH3 plasma pretreatment, which acts as a barrier layer, reducing the oxidation of the Si substrate beneath it. This analysis provides a general framework for the understanding and determination of adequate surface pretreatments, able to combat the substrate inhibited initial growth and the Si oxidation during metal-oxide ALD on Si.ACKNOWLEDGMENTS
Published: 2019
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21. Numerical simulations of nanosecond laser annealing of Si nanoparticles for plasmonic structures

Author: P. Acosta Alba, Sebastien Kerdiles, B. Curvers, Vincent Paillard, Caroline Bonafos, Karim Huet, Fuccio Cristiano, A-S. Royet, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, SCREEN-LASSE, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)
Subjects: Materials science, Silicon, Annealing (metallurgy), Nanoparticle, chemistry.chemical_element, Physics::Optics, 02 engineering and technology, 01 natural sciences, law.invention, law, 0103 physical sciences, Process window, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Plasmon, 010302 applied physics, [PHYS]Physics [physics], Computer simulation, business.industry, 021001 nanoscience & nanotechnology, Laser, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Nanosecond laser, 0210 nano-technology, business
Abstract: International audience; This paper reports numerical simulations of nanosecond laser thermal annealing of plasmonic structures based on Si-nanoparticles embedded in a SiO 2 matrix. From these simulations, we extracted guidelines for the structure design to be adopted. This study also investigates the expected laser annealing process window and the influence of nanoparticles coverage.
Published: 2019
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22. Impact of Germanium Concentration on the Ultraviolet Nanosecond Laser Annealing of Intrinsic Si1-xGex Epitaxial Layers

Author: P. Acosta-Alba, S. Kerdilès, Fuccio Cristiano, J.-P. Barnes, J.-M. Hartmann, P. Gergaud, and L. Dagault
Subjects: Materials science, chemistry, business.industry, Annealing (metallurgy), medicine, Optoelectronics, chemistry.chemical_element, Germanium, Nanosecond laser, Epitaxy, medicine.disease_cause, business, Ultraviolet
Published: 2019
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23. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors

Author: A. Pakfar, P. Boulenc, Fuccio Cristiano, Francois Wacquant, Christoph Zechner, Pierre Morin, B. Pelletier, Zahi Essa, Clement Tavernier, Marc Juhel, Jean-Luc Autran, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, STMicroelectronics [Crolles] (ST-CROLLES), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), STMicroelectronics [Crolles] ( ST-CROLLES ), Géoazur ( GEOAZUR ), Université Nice Sophia Antipolis ( UNS ), Université Côte d'Azur ( UCA ) -Université Côte d'Azur ( UCA ) -Institut national des sciences de l'Univers ( INSU - CNRS ) -Observatoire de la Côte d'Azur, Université Côte d'Azur ( UCA ) -Centre National de la Recherche Scientifique ( CNRS ), Universidade do Minho, Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 ( IEMN ), Ecole Centrale de Lille-Institut supérieur de l'électronique et du nunérique (ISEN)-Université Polytechnique Hauts-de-France ( UPHF ) -Université de Lille-Centre National de la Recherche Scientifique ( CNRS ), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence ( IM2NP ), Aix Marseille Université ( AMU ) -Université de Toulon ( UTLN ) -Centre National de la Recherche Scientifique ( CNRS ), Équipe Matériaux et Procédés pour la Nanoélectronique ( LAAS-MPN ), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] ( LAAS ), Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)
Subjects: inorganic chemicals, Materials science, Silicon, [ SPI.MAT ] Engineering Sciences [physics]/Materials, Inorganic chemistry, [ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Oxide, chemistry.chemical_element, Equivalent oxide thickness, 02 engineering and technology, Oxide thin-film transistor, complex mixtures, 01 natural sciences, chemistry.chemical_compound, 0103 physical sciences, [ SPI ] Engineering Sciences [physics], Materials Chemistry, LOCOS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Silicon oxide, 010302 applied physics, [ PHYS ] Physics [physics], business.industry, technology, industry, and agriculture, Strained silicon, equipment and supplies, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, stomatognathic diseases, Silicon nitride, chemistry, Optoelectronics, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business
Abstract: International audience; The presence of capping materials during annealing (activation for example) can substantially impact the silicon junction profiles of Complementary Metal Oxide Semiconductor Field Effect Transistors (CMOSFET), depending on the nature of these layers. In this paper we specifically investigated the boron out-diffusion from a silicon junction into the silicon oxide in presence of a silicon oxide/silicon nitride capping bi-layer similar to the stacks used to form sidewall spacers. After 120 s anneal we observed with secondary ion mass spectrometry (SIMS) substantial boron dose loss in silicon and segregation at the silicon oxide interface related to oxide and nitride material properties, in particular to the hydrogen concentration. We then modeled the boron profiles in both silicon and oxide as a function of the hydrogen static and dynamic in the materials. The exponential-like boron diffusion profiles observed in oxide are reproduced by introducing a long hop mechanism mediated with hydrogen-related defects (HRDs). (C) 2016 Elsevier Ltd. All rights reserved.
Published: 2016
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24. (Invited) High Index Dielectric Nanoantennas for Light Management, Controlled Photoluminescence of Quantum Emitters, and Semiconductor-Based Plasmonics

Author: Olivier Boisron, Anne-Sophie Royet, Frank Fournel, Vincent Paillard, Clément Majorel, Aurélien Cuche, Richard Monflier, Peter R. Wiecha, Nicolas Chery, Arnaud Arbouet, Jean-Marie Poumirol, Pablo Acosta-Alba, Caroline Bonafos, Bruno Masenelli, Nicolas Mallet, F. Gourbilleau, Fuccio Cristiano, Sebastien Kerdiles, Hervé Rinnert, Christian Girard, Guilhem Larrieu, and Vincent Larrey
Subjects: Photoluminescence, Materials science, Semiconductor, business.industry, High index, Light management, Optoelectronics, Dielectric, business, Quantum, Plasmon
Abstract: Recently, an alternative to plasmonics emerged with high-refractive index dielectric nanostructures (e.g. silicon, n≈4 in the visible range), which offer the same kind of applications as nanostructures of noble metals, but with interesting advantages and despite lower field enhancement and confinement volume. Thus, they can be used to enhance and control light scattering efficiency, nonlinear emission, Purcell effect, etc. Furthermore, silicon nanostructures offer several key advantages: absorption losses are far weaker than in metals for wavelengths longer than the direct band gap, presence of strong magnetic resonances much more difficult to obtain in metals, and access to semiconductor (CMOS) technology for reproducible large-scale nanostructure fabrication. The first mean for controlling optical properties is given by manipulating Mie resonances instead of local surface plasmon resonances (LSPR). The Mie resonances can be adjusted by modifying the size, shape, and material of those nanostructures. The other mean is obtained by doping the nanostructures generating free carriers, thus leading to tunable LSPRs as function of dopant concentration (contrary to metals which have a fixed free electron concentrations). We present two examples describing the interest of using silicon nanoantennas, which are: (i) emission rate modification of quantum emitters placed in the silicon nanoantenna near-field (we focus also on the important role of both electric and magnetic components of light), and (ii) tunable Si-based plasmonics in the MIR to NIR spectral range by tuning dopant concentration and structural parameters of Si nanostructures. We show the effect of a Si nanoantenna on the spontaneous emission of quantum emitters placed in its vicinity. The emission rate corresponds to the local density of photonic states (LDOS), which is modified by the nanostructure. Thus, it can be controlled (enhancement or quenching) by properly designing the nanoantenna. For application in field-enhanced spectroscopy and single molecule detection, the goal is to obtain the highest enhancement. We discuss results of photoluminescence enhancement of various emitters placed around simple Si nanoantennas, with a special focus on the photoluminescence of Eu3+-doped thin films deposited on the Si nanoantennas. These rare earth ions exhibit both electric dipole (ED) and magnetic dipole (MD) transitions of nearly equal strength. We show that these ED and MD transitions are very sensitive to the electric and magnetic LDOS, respectively. This can be evidenced using Si nanoantennas, which support both electric and magnetic resonances of comparable strength. Due to the very high index, they also give the unique opportunity to separate and redistribute in the nearfield the energy of the magnetic and electric parts of the electromagnetic field, otherwise inextricably connected in the far field. In a second part, we present theoretical results about doped Si nanostructures based on the Green Dyadic Method initially used for studying optical properties in metal nanostructures. We show that cuboid Si nanostructures of a few tenths of nm in each dimension, with carrier concentration around 2.6 1021 cm-3, give LSPR close to the telecom wavelength at 1.54 μm. Experimentally, an original strategy has been developed to incorporate and active dopant at concentrations above 1020 cm-3. Such strategy involves out-of-equilibrium annealing by using nanosecond laser pulses and liquid phase epitaxy. We can thus expect tuning the LSPR frequency in the MIR to NIR range depending on the dopant concentration and the nanostructure shape. Preliminary experimental results are shown and compared to theory.
Published: 2020
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25. Characterization of Heated Ion Implantation for non Amorphizing Conditions and Correlation with Kinetic Monte Carlo Simulations

Author: Vincent Lu, Fuccio Cristiano, Denis Rideau, Remi Beneyton, Nicolas Guitard, Marc Juhel, Edwin Arevalo, Wei Zou, C. Borowiak, Thomas Nassiet, Frederic Monsieur, E. Ghegin, L. Pinzelli, J. Borrel, K. Dabertrand, Romain Duru, L. Clément, Evan Oudot, and Sylvain Joblot
Subjects: 010302 applied physics, Condensed Matter::Materials Science, Work (thermodynamics), Ion implantation, Photoluminescence, Materials science, 0103 physical sciences, Radiative transfer, Kinetic Monte Carlo, 01 natural sciences, Molecular physics, Characterization (materials science)
Abstract: In this work, heated implantation impact on defect generation is observed for non-amorphizing conditions and specific anneal. Photoluminescence imaging method has been used and exhibits radiative defect density variation with chuck temperature. Moreover, to understand the behavior of such implantation in terms of defect generation and depth profile, effectiveness of Kinetic Monte Carlo (KMC) simulations is discussed.
Published: 2018
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26. Ultrafast Generation of Unconventional { 001 } Loops in Si

Author: María Aboy, Fuccio Cristiano, Antonino La Magna, Lourdes Pelaz, Luis A. Marqués, Toshiyuki Tabata, Iván Santos, Karim Huet, Pedro López, Universidad de Valladolid [Valladolid] (UVa), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Istituto per la Microelettronica e Microsistemi [Catania] (IMM), Consiglio Nazionale delle Ricerche (CNR), SCREEN-LASSE, Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), and National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR)
Subjects: Ostwald ripening, Phase transition, Laser annealing, Materials science, Láser, General Physics and Astronomy, 02 engineering and technology, Molecular dynamics, 01 natural sciences, Ion, [SPI.MAT]Engineering Sciences [physics]/Materials, symbols.namesake, Condensed Matter::Materials Science, [SPI]Engineering Sciences [physics], 0103 physical sciences, Cluster (physics), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Coalescence (physics), [PHYS]Physics [physics], Dinámica molecular, technology, industry, and agriculture, Extended defects, PACS numbers: 61.72.Cc, 61.72.Nn, 61.82.Fk, Nanosecond, 021001 nanoscience & nanotechnology, Condensed Matter::Soft Condensed Matter, Chemical physics, symbols, Melting point, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Si, 0210 nano-technology
Abstract: Producción Científica, Ultra-fast laser annealing of ion implanted Si has led to thermodynamically unexpected large {001} self-interstitial loops, and the failure of Ostwald ripening models for describing self-interstitial cluster growth. We have carried out molecular dynamics simulations in combination with focused experiments in order to demonstrate that at temperatures close to the melting point, self-interstitial rich Si is driven into dense liquid-like droplets that are highly mobile within the solid crystalline Si matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {001} loops through a liquid-to-solid phase transition in the nanosecond timescale., Ministerio de Economía, Industria y Competitividad - FEDER (Proyect TEC2014-60694-P), Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA331U14), CNR and CNRS “Understanding and Modeling of Excimer Laser Annealing” (UMEX)
Published: 2017
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27. Structural and mechanical characterization of hybrid metallic-inorganic nanosprings

Author: Sabrina Habtoun, Said Houmadi, Dmytro Dedovets, Christian Bergaud, Reiko Oda, Benjamin Reig, Marie-Hélène Delville, Fuccio Cristiano, Emilie Pouget, Équipe Microsystèmes électromécaniques (LAAS-MEMS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Équipe NanoBioSystèmes (LAAS-NBS), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Chimie et Biologie des Membranes et des Nanoobjets (CBMN), Université de Bordeaux (UB)-École Nationale d'Ingénieurs des Travaux Agricoles - Bordeaux (ENITAB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université de Bordeaux (UB), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), French RENATECH network, ANR-10-BLAN-0813,nanosprings,Nanohélices hybrides organiques–inorganiques fonctionnelles : étude de phénomènes exaltés à l'échelle nanométrique(2010), ANR-15-CE08-0041,NANOHELIFLEX,Assemblage de type ' bottom-up ' de Nanohélices fonctionnalisées: un pas de plus vers des dispositifs flexibles.(2015), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and École Nationale d'Ingénieurs des Travaux Agricoles - Bordeaux (ENITAB)-Institut de Chimie du CNRS (INC)-Université de Bordeaux (UB)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Nanostructure, Materials science, nanostructure, Polymers and Plastics, Silicon, Multiphysics, atomic force spectroscopy, chemistry.chemical_element, 02 engineering and technology, nanohelix, 010402 general chemistry, 01 natural sciences, Focused ion beam, Biomaterials, FIB, Composite material, High-resolution transmission electron microscopy, nanospring, Nanoelectromechanical systems, Metals and Alloys, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, nanomechanics, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, EBID, chemistry, Transmission electron microscopy, 0210 nano-technology, Nanomechanics
Abstract: International audience; Silica nanosprings (NS) are fabricated by a sol–gel deposition of silica precursors onto a template made of self-assembled organic chiral nanostructures. They are deposited and assembled on microstructured silicon substrates, and then metallized and clamped in a single lithography-free step using a focused ion beam (FIB). The resulting suspended hybrid metallic/inorganic NS are then characterized with high-resolution transmission electron microscopy (HRTEM) and scanning TEM/energy-dispersive X-ray spectroscopy (STEM/EDX), showing the atomic structure of the metallic layer. Three-point bending tests are also carried out using an atomic force microscope (AFM) and supported by finite element method (FEM) simulation with COMSOL Multiphysics allowing the characterization of the mechanical behavior and the estimation of the stiffness of the resulting NS. The information obtained on the structural and mechanical properties of the NS is discussed for future nano-electro-mechanical system (NEMS) applications.
Published: 2017
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28. Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Author: Karim Huet, Sébastien Duguay, Nikolay Cherkashin, Yang Qiu, M. Quillec, Didier Blavette, Huiyuan Wang, Fuccio Cristiano, Antonino La Magna, Giuseppe Fisicaro, Fulvio Mazzamuto, Équipe Matériaux et Procédés pour la Nanoélectronique ( LAAS-MPN ), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] ( LAAS ), Institut National Polytechnique [Toulouse] ( INP ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ) -Institut National Polytechnique [Toulouse] ( INP ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ), SCREEN-LASSE, Institute for Microelectronics and Microsystems/ Istituto per la Microelettronica e Microsistemi ( IMM ), Consiglio Nazionale delle Ricerche ( CNR ), Centre d'élaboration de matériaux et d'études structurales ( CEMES ), Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Groupe de physique des matériaux ( GPM ), Université de Rouen Normandie ( UNIROUEN ), Normandie Université ( NU ) -Normandie Université ( NU ) -Institut national des sciences appliquées Rouen Normandie ( INSA Rouen Normandie ), Normandie Université ( NU ) -Centre National de la Recherche Scientifique ( CNRS ), European Project : 258547,EC:FP7:ICT,FP7-ICT-2009-5,ATEMOX ( 2010 ), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Istituto per la Microelettronica e Microsistemi [Catania] (IMM), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), European Project: 258547,EC:FP7:ICT,FP7-ICT-2009-5,ATEMOX(2010), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Consiglio Nazionale delle Ricerche (CNR), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), and Normandie Université (NU)
Subjects: inorganic chemicals, Materials science, Dopant, Silicon, Mechanical Engineering, Analytical chemistry, chemistry.chemical_element, Bioengineering, General Chemistry, Atom probe, Condensed Matter Physics, Molecular physics, law.invention, Ion, Secondary ion mass spectrometry, Ion implantation, chemistry, law, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Dislocation, Burgers vector
Abstract: International audience; Damage evolution and dopant distribution during nanosecond laser thermal annealing of ion implanted silicon have been investigated by means of transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography. Different melting front positions were realized and studied: nonmelt, partial melt, and full melt with respect to the as-implanted dopant profile. In both boron and silicon implanted silicon samples, the most stable form among the observed defects is that of dislocation loops lying close to (001) and with Burgers vector parallel to the [001] direction, instead of conventional {111} dislocation loops or {311} rod-like defects, which are known to be more energetically favorable and are typically observed in ion implanted silicon. The observed results are explained in terms of a possible modification of the defect formation energy induced by the compressive stress developed in the nonmelted regions during laser annealing.
Published: 2014
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29. Electrical and optical characterization of extended defects induced in p‐type Si after Si ion implantation

Author: Eléna Bedel-Pereira, Zahi Essa, Cloud Nyamhere, Fuccio Cristiano, and Francios Olivie
Subjects: Photoluminescence, Materials science, Ion implantation, Deep-level transient spectroscopy, Silicon, chemistry, Annealing (metallurgy), Analytical chemistry, chemistry.chemical_element, Condensed Matter Physics, Spectroscopy, Fluence, Ion
Abstract: In this work we present the analysis of small interstitial clusters (ICs) introduced in p-type Si after ion implantation using deep level transient spectroscopy (DLTS) and photoluminescence. Silicon ions with energy 380 keV and fluence of 1.0 x 1012 cm-2 have been implanted into bulk p-type Si and post-implant annealing at temperatures between 500 oC and 800 oC specifically to create small interstitial cluster (ICs) defects. In the samples annealed at 500 oC, DLTS spectra show deep level hole traps at EV + 0.20 eV, EV + 0.25 eV, EV + 0.36 eV, and EV + 0.50 eV. The hole traps EV + 0.36 eV and EV + 0.50 eV have been attributed to the small Si self-interstitial clusters. After increasing the post-implant anneals to 600 oC there is a significant decrease in defect concentration and all the defects are annealed-out at 700 oC. Photoluminescence (PL) spectroscopy of the samples reveals optical band levels, at 1218 nm (1.019 eV), and 1233 nm (1.007 eV) which have both been attributed to interstitial cluster defects. The interstitial cluster-related optical band levels have been observed in the samples annealed at 500 oC which correlate well with DLTS measurements. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Published: 2013
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30. Influence of the Germanium content on the amorphization of silicon–germanium alloys during ion implantation

Author: Nikolay Cherkashin, Alain Claverie, A. Belafhaili, Fuccio Cristiano, L. Laânab, LCS, Faculty of Sciences. Mohammed V University of Rabat, Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Université Mohammed V de Rabat [Agdal] (UM5), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Fabrication, chemistry.chemical_element, Germanium, 02 engineering and technology, 01 natural sciences, chemistry.chemical_compound, 0103 physical sciences, General Materials Science, [PHYS]Physics [physics], 010302 applied physics, business.industry, Mechanical Engineering, Doping, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Silicon-germanium, Amorphous solid, Crystallography, Ion implantation, chemistry, Mechanics of Materials, Transmission electron microscopy, Energy density, Optoelectronics, 0210 nano-technology, business
Abstract: International audience; We have studied by transmission electron microscopy the amorphization of silicon–germanium (SiGe) alloys by Ge+ implantation. We show that when implanted with the same amorphization dose, the resulting amorphous layers get narrower when the Ge content increases. The experimental results can be simulated using the critical damage energy density model assuming that the amorphization threshold rises linearly with the Ge content from 3 eV/at for pure Si to 5 eV/at for pure Ge. These results and simulations are needed to optimize the fabrication of highly doped regions in SiGe alloys.
Published: 2013
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31. Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches

Author: A. La Magna, S. Boninelli, Fuccio Cristiano, V. Privitera, A Marino, Enrico Napolitani, Giuseppe Fisicaro, M. Italia, Salvatore Francesco Lombardo, M. G. Grimaldi, Guglielmo Fortunato, R. Milazzo, Giuliana Impellizzeri, Istituto per la Microelettronica e Microsistemi [Catania] (IMM), Consiglio Nazionale delle Ricerche (CNR), MATIS CNR-INFM Dipartimento di Metodologie Fisiche e Chimiche (DMFCI) (MATIS), Università degli studi di Catania [Catania]- Istituto Nazionale di Fisica Nucleare (INFN), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Institut de Recherche pour le Développement (IRD [Nouvelle-Calédonie]), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Università degli studi di Catania = University of Catania (Unict)- Istituto Nazionale di Fisica Nucleare (INFN), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)
Subjects: Materials science, Silicon, Laser Annealing, Non equilibrium diffusion, Phase field modeling, Materials Science (all), Condensed Matter Physics, Mechanics of Materials, Mechanical Engineering, chemistry.chemical_element, Germanium, 02 engineering and technology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI]Engineering Sciences [physics], Impurity, Metastability, 0103 physical sciences, Thermal, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, [PHYS]Physics [physics], Thin layers, business.industry, Nanosecond, 021001 nanoscience & nanotechnology, Crystallography, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Laser Annealing, Phase field modeling, Non equilibrium diffusion, Optoelectronics, Nanometre, 0210 nano-technology, business
Abstract: International audience; Laser annealing of semiconductor materials is a processing technique offering interesting application features when intense, transient and localized heat sources are needed for electronic device manufacturing or other nano-technological applications. The space-time localization of the induced thermal field (in the nanoseconds/ nanometers scale) promotes interesting non-equilibrium phenomena in the processed material which only recently have been systematically investigated and modelled. In this review paper we discuss the current knowledge on anomalous kinetics occurring in implanted silicon and germanium (i.e. thin layers of disorder diluted alloys of Si and Ge, with variable initial disorder status according to the implantation conditions) during the pulsed laser irradiation. In particular, we focus our attention on the anomalous impurity redistribution in the transient melting stage and on the formation of non conventional and metastable extended defects.
Published: 2017
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32. High performance CMOS FDSOI devices activated at low temperature

Author: Louis Hutin, J. Mazurier, D. Barge, L. Pasini, Olivier Weber, Frédéric Mazen, F. Piegas Luce, Claire Fenouillet-Beranger, M. Vinet, Antoine Cros, E. Ghegin, B. Mathieu, S. Chhun, J. Borrel, Frederic Boeuf, Quentin Rafhay, Anthony Payet, Michel Haond, Perrine Batude, M. Casse, Fuccio Cristiano, Benoit Sklenard, Zineb Saghi, Joris Lacord, D. Blachier, J.P. Barnes, Gerard Ghibaudo, Francois Andrieu, V. Mazzocchi, N. Rambal, J. Micout, Vincent Delaye, V. Lapras, Laurent Brunet, R. Daubriac, Pascal Besson, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Nano 2017, ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées
Subjects: 010302 applied physics, Materials science, business.industry, 02 engineering and technology, 01 natural sciences, 020202 computer hardware & architecture, PMOS logic, CMOS, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, business, NMOS logic
Abstract: International audience; 3D sequential integration requires top FETs processed with a low thermal budget (500-600°C). In this work, high performance low temperature FDSOI devices are obtained thanks to the adapted extension first architecture and the introduction of mobility boosters (pMOS: SiGe 27% channel / SiGe:B 35% RSD and nMOS: SiC:P RSD). This first demonstration of n and p extension first FDSOI devices shows that low temperature activated device can match the performance of a device with state-of-the-art high temperature process (above 1000°C).
Published: 2016
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33. Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs

Author: Ana M. Beltrán, Anton J. Bauer, Christian Strenger, Mathieu Lefebvre, Heiner Ryssel, Vincent Mortet, Eléna Bedel-Pereira, Tobias Erlbacher, Fuccio Cristiano, Volker Haeublein, Sylvie Schamm-Chardon, Fraunhofer Institute for Integrated Systems and Device Technology (Fraunhofer IISB), Fraunhofer (Fraunhofer-Gesellschaft), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, PICF (Programme Inter Carnot Fraunhofer), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université de Toulouse (UT)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Electron mobility, Materials science, Mechanical Engineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Mechanics of Materials, Transmission electron microscopy, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Electronic engineering, General Materials Science, Composite material, 0210 nano-technology, High-resolution transmission electron microscopy
Abstract: International audience; N-channel MOSFETs were manufactured on p-type and on p-implanted, n-type 4H-SiC substrates. The electron mobility in the inversion channel was measured to be correlated with the structural and chemical properties determined by transmission electron microscopy. With regard to what was previously discussed in the literature, interfacial layer formation and carbon distribution across the SiC/SiO2 interface were considered in relation with the measured Hall electron mobility.
Published: 2012
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34. Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

Author: Anton J. Bauer, Eléna Bedel-Pereira, Christian Strenger, Mathieu Lefebvre, Volker Häublein, Ana M. Beltrán, Sylvie Schamm-Chardon, Vincent Mortet, Fuccio Cristiano, Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Fraunhofer Institute for Integrated Systems and Device Technology (Fraunhofer IISB), Fraunhofer (Fraunhofer-Gesellschaft), PICF (Programme Inter Carnot Fraunhofer) 2010 : MOBISIC, European Project, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université de Toulouse (UT)
Subjects: Electron mobility, Materials science, chemistry.chemical_element, 02 engineering and technology, Epitaxy, 01 natural sciences, 0103 physical sciences, Nano, Electronic engineering, General Materials Science, Electronics, High-resolution transmission electron microscopy, [PHYS]Physics [physics], 010302 applied physics, business.industry, Mechanical Engineering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Characterization (materials science), chemistry, Mechanics of Materials, Transmission electron microscopy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Carbon
Abstract: 4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and p-implanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and chemical properties determined by transmission electron microscopy methods. With regard to what was previously discussed in the literature, transition layer formation and carbon distribution across the SiC-SiO2interface are considered in relation with the measured low electron mobility of the MOSFETS.
Published: 2012
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35. Phase field model of the nanoscale evolution during the explosive crystallization phenomenon

Author: Enrico Napolitani, S. Boninelli, Salvatore Francesco Lombardo, M. G. Grimaldi, Karim Huet, Ioannis Deretzis, Fuccio Cristiano, A. La Magna, Università degli studi di Catania [Catania], MATIS CNR-INFM Dipartimento di Metodologie Fisiche e Chimiche (DMFCI) (MATIS), Università degli studi di Catania [Catania]- Istituto Nazionale di Fisica Nucleare (INFN), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, ScreenCell [Sarcelles], University of Padova [Padova, Italy], Università degli studi di Catania = University of Catania (Unict), Università degli studi di Catania = University of Catania (Unict)- Istituto Nazionale di Fisica Nucleare (INFN), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), and Università degli Studi di Padova = University of Padua (Unipd)
Subjects: 010302 applied physics, Exothermic reaction, Materials science, Explosive material, Annealing (metallurgy), Kinetics, General Physics and Astronomy, Nanosecond, explosive crystallization, 01 natural sciences, Instability, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, [SPI]Engineering Sciences [physics], 13. Climate action, law, Chemical physics, 0103 physical sciences, Phase field model, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Crystallization, 010306 general physics, Nanoscopic scale
Abstract: Explosive crystallization is a well known phenomenon occurring due to the thermodynamic instability of strongly under-cooled liquids, which is particularly relevant in pulsed laser annealing processes of amorphous semiconductor materials due to the globally exothermic amorphous-toliquid-to-crystal transition pathway. In spite of the assessed understanding of this phenomenon, quantitative predictions of the material kinetics promoted by explosive crystallization are hardly achieved due to the lack of a consistent model able to simulate the concurrent kinetics of the amorphous-liquid and liquid-crystal interfaces. Here, we propose a multi-well phase-field model specifically suited for the simulation of explosive crystallization induced by pulsed laser irradiation in the nanosecond time scale. The numerical implementation of the model is robust despite the discontinuous jumps of the interface speed induced by the phenomenon. The predictive potential of the simulations is demonstrated by means of comparisons of the modelling predictions with experimental data in terms of in situ reflectivity measurements and ex-situ micro-structural and chemical characterization. Published by AIP Publishing.
Published: 2018
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36. Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation (PIII)

Author: Fuccio Cristiano, V. Vervisch, Yannick Larmande, Pier-Francesco Fazzini, Frank Torregrosa, H. Etienne, Marc Sentis, Thierry Sarnet, and Philippe Delaporte
Subjects: Materials science, Ion beam, Annealing (metallurgy), Doping, Analytical chemistry, General Physics and Astronomy, Surfaces and Interfaces, General Chemistry, Condensed Matter Physics, Laser, Plasma-immersion ion implantation, Surfaces, Coatings and Films, law.invention, Secondary ion mass spectrometry, Ion implantation, law, Wafer
Abstract: Today, the main challenges for the realization of the source/drain extensions concern the ultra-low energy implantation and the activation of the maximum amount of dopants with a minimized diffusion. Among the different annealing processes, one solution is the laser thermal annealing. Many studies [F. Torregrosa, C. Laviron, F. Milesi, M. Hernandez, H. Faik, J. Venturini, Proc. 14th International Conference on Ion Implant Technology, 2004; M. Hernandez, J. Venturini, D. Zahorski, J. Boulmer, D. Debarre, G. Kerrien, T. Sarnet, C. Laviron, M.N Semeria, D. Camel, J.L Santailler, Appl. Surf. Sci. 208–209 (2003) 345–351] have shown that the association of Plasma Immersion Ion Implantation (PIII) and Laser Thermal Process (LTP) allows to obtain junctions of a few nanometers with a high electrical activation. All the wafers studied have been implanted by PULSION ® (PIII implanter developed by Ion Beam Services) with an acceleration voltage of 1 kV and a dose of 6 × 10 15 at./cm 2 . In this paper, we compare the annealing process achieved with three excimer lasers: ArF, KrF and XeCl with a wavelength of respectively 193, 248 and 308 nm. We analyse the results in terms of boron activation and junction depth. To complete this study, we have observed the effect of pre-amorphization implantation (PAI) before PIII process on boron implantation and boron activation. We show that Ge PAI implanted by classical beam line allows a decrease of the junction depth from 20 down to 12 nm in the as-implanted condition. Transmission Electron Microscopy (TEM) analyses were performed in order to study the structure of pre-amorphized silicon and to estimate the thickness of the amorphous layer. In order to determine the sheet resistance ( R s ) and the junction depth ( X j ), we have used the four-point probe technique (4PP) and secondary ion mass spectrometry (SIMS) analysis. To complete the electrical characterizations some samples have been analyzed by non-contact optical measurements. All the results are presented as a function of the laser fluence and the laser wavelength.
Published: 2009
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37. Study of silicon–germanium interdiffusion from pure germanium deposited layers

Author: Yves Campidelli, Fuccio Cristiano, Emmanuel Scheid, Claude Armand, Mathieu Gavelle, El Mehdi Bazizi, Pier-Francesco Fazzini, Olivier Marcelot, and Aomar Halimaoui
Subjects: Materials science, Silicon, Mechanical Engineering, Doping, Analytical chemistry, chemistry.chemical_element, Germanium, Condensed Matter Physics, Silicon-germanium, Secondary ion mass spectrometry, chemistry.chemical_compound, chemistry, Mechanics of Materials, General Materials Science, Layer (electronics)
Abstract: We have studied the Ge–Si interdiffusion from structures in which ∼300 nm-thick pure Ge(:B) layers were grown on Si 200 mm substrates by CVD at 450 °C. As-grown samples were capped with SiO 2 and then annealed in the 750–900 °C range for various times. Using the secondary ion mass spectrometry (SIMS) MCs 2 + methodology, we measures precisely the Ge diffused profiles. Boltzmann–Matano analysis was used to extract the interdiffusion coefficients. Si–Ge interdiffusion is found to be strongly dependent on the Ge concentration. Also, an effect of dislocations near the Ge/Si original interface is suggested by our results. A physical model including the various observed effects is proposed, that gives a very good agreement with experiments. Finally, we show that the effect of the in situ B doping of the pure Ge layer is to reduce the interdiffusion.
Published: 2008
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38. Extended Defects Evolution in Pre-Amorphised Silicon after Millisecond Flash Anneals

Author: Fuccio Cristiano, S. Boninelli, A. Pakfar, Ray Duffy, Silke Paul, El Mehdi Bazizi, Wilfried Lerch, and Pier-Francesco Fazzini
Subjects: Millisecond, Annihilation, Materials science, Silicon, Annealing (metallurgy), Mechanical Engineering, chemistry.chemical_element, Condensed Matter Physics, Molecular physics, Crystallography, Ion implantation, chemistry, Mechanics of Materials, Transmission electron microscopy, General Materials Science, Nanometre, Rapid thermal annealing
Abstract: In this paper, we investigate the evolution of extended defects during a millisecond Flash anneal after a preamorphising implant. The experimental results, supported by predictive simulations, indicate that during the ultra-fast temperature ramp-up and rump-down occurring in a millisecond Flash anneal, the basic mechanisms that control the growth and evolution of extended defects are not modified with respect to the relatively slower annealing processes, such as “soak” and “spike” Rapid Thermal Annealing. In addition, we have observed a decrease in the number of trapped interstitials in the End-Of-Range (EOR) defects when decreasing the Ge+ amorphisation energy from 30 keV down to 2 keV. This result is ascribed to two concomitant phenomena: (i) the increase of the initial number of interstitials, Ni, created by the amorphisation step, when the implant energy is decreased and (ii) the efficient interstitial annihilation at the silicon surface, whose recombination length, Lsurf, is in the nanometer range even at the very high temperatures employed in millisecond Flash anneals.
Published: 2008
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39. Lateral porous silicon membranes with tunable pore size for on-chip separation

Author: Fuccio Cristiano, Yingning He, David Bourrier, Xavier Dollat, Éric Imbernon, Thierry Leichle, and Adhitya Bhaswara
Subjects: Materials science, Fabrication, Dopant, 010401 analytical chemistry, Microfluidics, technology, industry, and agriculture, Analytical chemistry, 02 engineering and technology, equipment and supplies, 021001 nanoscience & nanotechnology, Porous silicon, 01 natural sciences, 0104 chemical sciences, law.invention, Ion implantation, Membrane, Chemical engineering, law, 0210 nano-technology, Porosity, Filtration
Abstract: In this work, we present a novel fabrication process for the creation of lateral porous silicon membranes with tunable pore size and porosity and their integration into planar microfluidics. Since the formation of porous silicon by anodization is highly dependent on the dopant type and concentration, we use ion implantation to manipulate the local dopant concentration in order to control the membrane properties. The dead-end filtration capability of our lateral porous silicon membranes integrated within planar microchannels is demonstrated by adequately retaining 300 nm diameter beads, while molecules such as fluorescein and miRNA permeate the membranes.
Published: 2016
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40. A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices

Author: Andreas Schenk, A Scheinemann, A Scheit, F. Olivie, Cloud Nyamhere, Fuccio Cristiano, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich), Équipe MICrosystèmes d'Analyse (LAAS-MICA), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)
Subjects: [PHYS]Physics [physics], Materials science, Deep-level transient spectroscopy, Silicon, business.industry, Annealing (metallurgy), General Physics and Astronomy, Schottky diode, chemistry.chemical_element, Molecular physics, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI]Engineering Sciences [physics], Ion implantation, chemistry, Electrical resistivity and conductivity, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Dislocation, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Leakage (electronics)
Abstract: International audience; In this work, the electrical properties of dislocation loops and their role in the generation ofleakage currents in p-n or Schottky junctions wereinvestigated both experimentally and throughsimulations. Deep Level Transient Spectroscopy(DLTS) reveals that the implantation of siliconwith 21015Ge cm2and annealing between 1000C and 1100C introduced two broad elec-tron levels EC0.38 eV and EC0.29 eV in n-type samples and a single broad hole trap EVþ0.25 eV in the p-type samples. These trap levels are related to the extended defects (dislocationloops) formed during annealing. Dislocation loops are responsible for the significant increase ofleakage currents which are attributed to the same energy levels. The comparison between struc-tural defect parameters and electrical defect concentrations indicates that atoms located on theloop perimeter are the likely sources of the measured DLTS signals. The combined use of defectmodels and recently developed DLTS simulation allows reducing the number of assumptions andfitting parameters needed for the simulation of leakage currents, therefore improving their pre-dictability. It is found that simulations based on the coupled-defect-levels model reproduce wellthe measured leakage current values and their field dependence behaviour, indicating that leakagecurrents can be successfully simulated on the exclusive basis of the experimentally observedenergy levels
Published: 2015
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41. Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices

Author: Fuccio Cristiano, Anna Maria Beltrán, Sébastien Duguay, Anton J. Bauer, Christian Strenger, Sylvie Schamm-Chardon, Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Groupe de physique des matériaux (GPM), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU), Fraunhofer Institute for Integrated Systems and Device Technology (Fraunhofer IISB), Fraunhofer (Fraunhofer-Gesellschaft), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), PICF (Programme Inter Carnot Fraunhofer), European Project, Universidad de Sevilla. Departamento de Ingeniería y Ciencias de los Materiales y del Transporte, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Publica
Subjects: Electron mobility, Materials science, chemistry.chemical_element, Compositional mapping, Nanotechnology, Elemental distribution, 02 engineering and technology, Atom probe, Silicon carbide, 01 natural sciences, Atomic units, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, Materials Chemistry, Electron energy loss spectroscopy, Carbon distribution, MOSFET devices, Mobility degradation, 010302 applied physics, [PHYS]Physics [physics], Elemental compositions, business.industry, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 4h-sic mosfets, Carbon, Characterization (materials science), Atom probe tomography, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Material properties, Transition layers
Abstract: The breakthrough of 4H-SiC MOSFETs is stemmed mainly due to the mobility degradation in their channel in spite of the good physical intrinsic material properties. Here, two different n-channel 4H-SiC MOSFETs are characterized in order to analyze the elemental composition at the SiC/SiO2 interface and its relationship to their electrical properties. Elemental distribution analyses performed by EELS reveal the existence of a transition layer between the SiC and the SiO2 regions of the same width for both MOSFETs despite a factor of nearly two between their electron mobility. Additional 3D compositional mapping by atom probe tomography corroborates these results, particularly the absence of an anomalous carbon distribution around the SiC/SiO2 interface.
Published: 2015
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42. Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation

Author: Guillermo P. Ortiz, Vincent Mortet, Peter Pichler, Eléna Bedel-Pereira, Anton J. Bauer, Christian Strenger, Viktoryia Uhnevionak, Alex Burenkov, Fuccio Cristiano, Fraunhofer Institute for Integrated Circuits (Fraunhofer IIS), Fraunhofer (Fraunhofer-Gesellschaft), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Institute of Physics of the Czech Academy of Sciences (FZU / CAS), Czech Academy of Sciences [Prague] (CAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées
Subjects: 010302 applied physics, [PHYS]Physics [physics], Materials science, business.industry, Mechanical Engineering, Doping, 02 engineering and technology, Depth dependence, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Characterization (materials science), [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI]Engineering Sciences [physics], Mechanics of Materials, 0103 physical sciences, MOSFET, Electronic engineering, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business
Abstract: International audience; The effect of bulk potential engineering on the transport properties in the channel of SiC MOSFETs has been studied. For this purpose, n-channel SiC MOSFETs have been manufactured with different background doping concentrations and characterized electrically at room temperature by current-voltage as well as by Hall-effect measurements. To interpret the measurements performed, numerical simulations have been carried out using Sentaurus Device of Synopsys. The main finding of the simulation analysis is that the change in the depth of the band-bending has to be considered to explain the doping dependence of SiC MOSFET characteristics.
Published: 2015
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43. Defects evolution and dopant activation anomalies in ion implanted silicon

Author: Nick E. B. Cowern, Wilfried Lerch, Nikolay Cherkashin, Y. Lamrani, Fabrice Severac, O. Marcelot, Alain Claverie, Simona Boninelli, M. Gavelle, Fuccio Cristiano, Silke Paul, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), University of Surrey (UNIS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Nuclear and High Energy Physics, Materials science, Dopant, Silicon, Condensed matter physics, technology, industry, and agriculture, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Dopant Activation, 021001 nanoscience & nanotechnology, 01 natural sciences, Crystallographic defect, Semimetal, Ion implantation, chemistry, Transmission electron microscopy, 0103 physical sciences, Diffusion (business), 0210 nano-technology, Instrumentation
Abstract: International audience; The interactions between the defects and the implanted dopants are at the origin of the diffusion and activation anomalies that are among the major obstacles to the realisation of ultra-shallow junctions satisfying the ITRS requirements.In this paper, we present some recent results on the evolution of extended defects in technology relevant conditions for the fabrication of p+/n ultra-shallow junctions and elucidate for each of them the role of the defects in the diffusion and activation anomalies exhibited by the implanted dopants. The presented studies range from the formation of large Boron-Interstitial Clusters in high-fluence B+-implanted silicon, to the deactivation/reactivation of preamorphised ultra-shallow junctions and, finally, to the impact of co-implanted F on the thermal stability of preamorphised junctions.
Published: 2006
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44. Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon

Author: Nikolay Cherkashin, Martin Hÿtch, Alain Claverie, Fuccio Cristiano, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Materials science, Silicon, Plane (geometry), chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Molecular physics, Atomic and Molecular Physics, and Optics, Ion, Crystallography, chemistry, 0103 physical sciences, Displacement field, General Materials Science, Dislocation, 0210 nano-technology, High-resolution transmission electron microscopy, Burgers vector, Beam (structure)
Abstract: International audience; In this work, we present a detailed structural characterization of the defects formed after 0.5 keV B+ implantation into Si to a dose of 1x1015 ions/cm2 and annealed at 650°C and 750°C during different times up to 160 s. The clusters were characterized by making use of Weak Beam and High Resolution Transmission Electron Microscopy (HRTEM) imaging. They are found to be platelets of several nanometer size with (001) habit plane. Conventional TEM procedure based on defect contrast behavior was applied to determine the directions of their Burger’s vectors. Geometric Phase Analysis of HRTEM images was used to measure the displacement field around these objects and, thus, to unambiguously determine their Burger’s vectors. Finally five types of dislocation loops lying on (001) plane are marked out: with ] 001 [1/3 ≅ b and b ∝ [1 0 1], [-1 0 1], [0 1 1], [0 -1 1].
Published: 2005
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45. Engineering strained silicon on insulator wafers with the Smart CutTM technology

Author: D. Bensahel, A. Tiberj, Vincent Paillard, N. Kernevez, M. N. Séméria, Bruno Ghyselen, Hubert Moriceau, Etienne Snoeck, André Rocher, C. Di Nardo, Alain Claverie, Pascal Besson, Thomas Ernst, J.M. Hartmann, Alexandra Abbadie, Cecile Aulnette, Anne Ponchet, Fuccio Cristiano, Frank Fournel, Olivier Rayssac, M. Cabié, Francois Andrieu, I. Cayrefourq, Laetitia Vincent, Philippe Boucaud, Carlos Mazure, Y. Bogumilowicz, Benedite Osternaud, and Nicolas Daval
Subjects: Materials science, Silicon, business.industry, Silicon on insulator, chemistry.chemical_element, Insulator (electricity), Strained silicon, Condensed Matter Physics, Epitaxy, Electronic, Optical and Magnetic Materials, Semiconductor, CMOS, chemistry, Materials Chemistry, Electronic engineering, Optoelectronics, Wafer, Electrical and Electronic Engineering, business
Abstract: Strained silicon on insulator wafers are today envisioned as a natural and powerful enhancement to standard SOI wafers and/or bulk-like strained Si layers. This paper is intended to demonstrate through miscellaneous structural results how a layer transfer technique such as the Smart CutTM technology can be used to obtain good quality tensile-strained silicon on insulator wafers. Such a technique uses preferentially hydrogen implantation to peel-off the very top part of an epitaxial stack and transfer it onto another silicon substrate. The formation of an insulator, prior to the bonding onto a new silicon substrate enables the formation of a “semiconductor on insulator” structure. Two approaches based on the Smart Cut technique are considered in this paper. The first one relies on the formation by layer transfer of a relaxed SiGe on insulator (“SGOI”) substrate on which a tensile-strained Si layer is then grown. The second one is based on the transfer of a SiGe relaxed buffer/Si cap stack. A SiGe-free tensile-silicon on insulator (sSOI) substrate is then obtained after the selective etching of the top SiGe layer. The epitaxial layers studied in this article are of two kinds: (i) the thick, nearly fully relaxed SiGe layers (with or without tensile-strained Si layers on top depending on the final structure targeted: SGOI or sSOI) used as the donor wafers in layer transfer operations, and (ii) the thin, relaxed SiGe layers and the thin, tensile-strained Si epitaxial films grown on SGOI substrates. In-depth physical characterizations of these epitaxial layers are used to evaluate the quality of the transferred layers in terms of thickness uniformity, Ge content, strain control, dislocation densities etc… Detailed experiments are also used to demonstrate that these final substrates are compatible with future CMOS applications. The sSOI approach is particularly challenging in this respect as the strain needs to be maintained during many technological operations such as layer transfer, selective removal of the SiGe, high temperature thermal treatments etc. First results showing how the strain is changing during such operations are presented.
Published: 2004
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46. Thermal evolution of {113} defects in silicon: transformation against dissolution

Author: Y. Lamrani, Fuccio Cristiano, B. de Mauduit, P. Calvo, Alain Claverie, Nikolay Cherkashin, B. Colombeau, Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), University of Surrey (UNIS), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)
Subjects: Ostwald ripening, Nuclear and High Energy Physics, Materials science, Silicon, Annealing (metallurgy), Population, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, symbols.namesake, 0103 physical sciences, Thermal, Well-defined, education, Instrumentation, Dissolution, [PHYS]Physics [physics], 010302 applied physics, education.field_of_study, business.industry, 021001 nanoscience & nanotechnology, Crystallography, Semiconductor, chemistry, Chemical physics, symbols, 0210 nano-technology, business
Abstract: International audience; Modelling of diffusion anomalies in Si requires reliable data on {1 1 3} defects evolution during annealing under well defined conditions. This paper reports on the conditions under which {1 1 3} defects can alternatively dissolve or transform into dislocation loops (DLs). Our results definitely prove that the dissolution of {1 1 3} defects is not an intrinsic characteristic of these defects but reflects the competition between atomic interchange between defects and diffusion to the surface. At low temperature (up to 800 °C), these defects can reach large sizes before dissolving. If the annealing temperature is high enough (above 850 °C), these defects can transform into DLs probably through a reaction barrier. Once formed, these DLs provide internal sinks within the population and transform the non-conservative Ostwald ripening into a quasi-conservative Ostwald ripening. In the mean time, the flux of Si atoms towards the surface that drives the defect dissolution is suppressed and replaced by internal fluxes between defects of different types.
Published: 2004
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47. Depth dependence of defect evolution and TED during annealing

Author: Nick E. B. Cowern, E. Lampin, Y. Lamrani, Alain Claverie, Nikolay Cherkashin, B. Colombeau, P. Calvo, Fuccio Cristiano, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: 010302 applied physics, Ostwald ripening, Nuclear and High Energy Physics, Supersaturation, Materials science, Condensed matter physics, Silicon, Annealing (metallurgy), business.industry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Crystallographic defect, symbols.namesake, Crystallography, Ion implantation, Semiconductor, chemistry, Transmission electron microscopy, 0103 physical sciences, symbols, 0210 nano-technology, business, Instrumentation
Abstract: A quantitative transmission electron microscopy (TEM) study on the depth profile of extended defects, formed after Si implantation, has been carried out. Two different Si+ implant conditions have been considered. TEM analysis for the highest energy/dose shows that {1 1 3} defects evolve into dislocation loops whilst the defect depth distribution remains unchanged as a function of annealing time. For the lowest energy/dose, {1 1 3} defects grow and dissolve while the defect band shrinks preferentially on the surface side. At the same time, extraction of boron transient enhanced diffusion (TED) as a function of depth shows a decrease of the supersaturation towards the surface, starting at the location of the defect band. The study clearly shows that in these systems the silicon surface is the principal sink for interstitials. The results provide a critical test of the ability of physical models to simulate defect evolution and TED.
Published: 2004
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48. Dopant Segregation on Cavities Induced by Helium Implantation: Impact of the Doping Level

Author: Frédéric Cayrel, M. Leo Vincent, Daniel Alquier, A. Claverie, C. Dubois, Laurent Ventura, and Fuccio Cristiano
Subjects: Materials science, Dopant, Silicon, Condensed matter physics, Doping, chemistry.chemical_element, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, chemistry, Getter, General Materials Science, Atomic physics, Dislocation, Helium
Published: 2003
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49. Extended defects in shallow implants

Author: B. Colombeau, G. Ben Assayag, Alain Claverie, Caroline Bonafos, B. de Mauduit, Fuccio Cristiano, and X. Hebras
Subjects: Materials science, Dopant, Silicon, Annealing (metallurgy), chemistry.chemical_element, General Chemistry, Crystallography, Low energy, Ion implantation, chemistry, Chemical physics, Free surface, General Materials Science, Wafer, Dissolution
Abstract: Extended defects are often found after ion implantation and annealing of silicon and they are known to affect dopant diffusion. The article reviews the structure and energetics of the most often found extended defects and describes the mechanisms by which all these defects grow in size and transform during annealing. Defects grow by interchanging the Si atoms they are composed of and thus maintain large supersaturations of free Si interstitials in the region. A model has been developped to describe such an evolution in presence of a free surface. It is shown that after low energy implantation, the surface of the wafer may recombine large amounts of these free Si interstitials, driving defects into dissolution before transformation into more stable forms.
Published: 2003
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50. Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs

Author: Vincent Mortet, Fuccio Cristiano, Eléna Bedel-Pereira, Viktoryia Uhnevionak, Guillermo P. Ortiz, Anton J. Bauer, Christian Strenger, Alexander Burenkov, Peter Pichler, Publica, Fraunhofer Institute for Integrated Circuits (Fraunhofer IIS), Fraunhofer (Fraunhofer-Gesellschaft), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Institute of Physics of the Czech Academy of Sciences (FZU / CAS), Czech Academy of Sciences [Prague] (CAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées
Subjects: Electron mobility, Materials science, 02 engineering and technology, 01 natural sciences, Temperature measurement, Condensed Matter::Materials Science, chemistry.chemical_compound, hall effect, Hall effect, 0103 physical sciences, MOSFET, Hall Factor, Electronic engineering, Silicon carbide, SiC MOSFET, Electrical measurements, Electrical and Electronic Engineering, scattering mechanisms, Computer Science::Information Theory, [PHYS]Physics [physics], 010302 applied physics, Scattering, business.industry, Doping, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, Condensed Matter::Strongly Correlated Electrons, 0210 nano-technology, business, electron mobility
Abstract: International audience; The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using current-voltage and Hall-effect measurements. To interpret the electrical measurements, numerical TCAD simulations have been performed. A simulation methodology that includes the calculation of the Hall factor in the channel of SiC MOSFETs has been developed and applied. In addition, a new model for the bulk mobility has been suggested to explain the temperature dependence of the MOSFET characteristics with different background doping concentrations. Based on the good agreement between the simulated and the measured results, scattering mechanisms in the channel of SiC MOSFETs have been studied.
Published: 2015
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