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Copper-zinc-tin-sulfide (CZTS) solar cells have now become a topic of interest in the solar power generation industry. These are used as an absorber in the zinc oxide (ZnO)/cadmium sulfide (CdS) core-shell nanowire arrays, in order to improve the performance of solar cells. The relationship between the average increase in absorption rates and CdS shell thickness (compared to the thin film) reveals that the optimum thickness with the maximum average absorption rate (39.95%) compared to thin film is 30 nm. The cells’ electrical and optical performance was significantly improved with the introduction of graphene between the ZnO and CdS layers. The shell thicknesses for a better performance of these nanowire solar cells were 30 and 40 nm, with almost the same open-circuit voltage, the similar short-circuit current density, and efficiency, which were 630 mV, 6.39 mA/cm2, and 16.8%, respectively. Furthermore, a minimum reflection of 40% was obtained with these same shell thicknesses.

The numerical modeling of Cu2ZnSnS4 solar cells with ZnO/CdS core-shell nanowires of optimal dimensions with and without graphene is described in detail in this study. The COMSOL Simulation was used to determine the optimal values of core diameter and shell thickness by comparing their optical performance and to evaluate the optical and electrical properties of the different models. The deposition of a nanolayer of graphene on the layer of MoS2 made it possible to obtain a maximum absorption of 97.8% against 96.5% without the deposition of graphene.The difference between generation rates and between recombination rates of electron–hole pairs of models with and without graphene is explored.The electrical parameters obtained, such as the filling factor (FF), the short-circuit current density (Jsc), the open-circuit voltage (Voc), and the efficiency (EFF) are, respectively, 81.7%, 6.2 mA/cm2, 0.63 V, and 16.6% in the presence of graphene against 79.2%, 6.1 mA/cm2, 0.6 V, and 15.07% in the absence of graphene. The suggested results will be useful for future research work in the field of CZTS-based solar cells with ZnO/CdS core-shell nanowires with broadband light absorption rates.

InAs/AlSb is a material system that can be used as a low-noise avalanche detector and operates in the short-wave infrared band. The interface parameters determine the wave function overlap (WFO). Maximizing the WFO of InAs/AlSb superlattices improves the quantum efficiency (QE) of infrared avalanche photodetectors (APDs). However, this remains a huge challenge. Here, the 8-band k·p perturbation method based on Bloch wave envelope function approximation was used to calculate the energy level structure of InAs/AlSb superlattices. The results indicate that the WFO is enhanced with increasing InSb interface thickness or when the InSb (or AlAs) interface is far from the intersection of InAs and AlSb. As the AlAs interface thickness increases, the WFO enhances and then reduces. The maximum increase in WFO is 15.7%, 93%, and 156.8%, respectively, with three different models. Based on the stress equilibrium condition, we consider the interface engineering scheme proposed for enhancing WFO with an increase of 16%, 114%, and 159.5%, respectively. Moreover, the absorption wavelength shift is less than ±0.1 μm. Therefore, the interface layer thickness and position can be designed to enhance the WFO without sacrificing other properties, thereby improving the QE of the device. It provides a new idea for the material epitaxy of APDs. [ABSTRACT FROM AUTHOR]