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9. [Epidemiological survey on malaria situation in Motuo County of Tibet, China]

10. Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz

11. An 85–120 GHz high-gain and wide-band InP MMIC amplifier

12. Realization of 70-nm T-gate InP-based PHEMT for MMW low noise applications

13. High‐frequency InAlN/GaN HFET with fmax over 400 GHz.

14. A 750-W AlGaN/GaN HEMT Operating at 80 V for $L$ -Band Applications.

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