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131 results on '"Fu, Shencheng"'

21. Supplementary document for Adjustable color response during plasmon resonance by monochromatic light irradiation - 5376044.pdf

Author

Li, Xin, Fu, Shencheng, Miao, Jingying, Zhang, Mingyue, and Zhang, Xintong

Subjects
Condensed Matter::Materials Science, Physics::Medical Physics, Physics::Optics, Physics::Geophysics
Abstract

The preparation process, pore size distribution, spectra fitting, reflectance spectra, Raman scattering spectrum, XRD patterns, TEM, SEM, FDTD simulation, and optical images of samples

Published
2021
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40. Bidirectional Photochromism via Anchoring of Carbon Dots to TiO2Porous Films

Author

Wu, Jiarui, Fu, Shencheng, Zhang, Xintong, Wu, Chunxia, Wang, Ailin, Li, Chuang, Shan, Guiye, and Liu, Yichun

Abstract

Photochromic materials present photocontrollable properties, which is of great interest for potential applications including high-density storage and optical displays. Herein, we demonstrate a promising pathway toward smart photochromic nanocomposite exploration by anchoring of carbon dots (CDs) to titanium dioxide (TiO2) porous films. This study reveals that the color of the CDs/TiO2film obtained by dropping anchoring becomes darker and that obtained by immersion anchoring becomes lighter, both under blue light irradiation. For the photobleaching material system, the spectral response is strongly dependent on wavelength and polarization of the exciting light, which provides new dimensions for optical information encryption and memory. This work lays the foundation for the materials platform in the integration of advanced information processing in the future.

Published
2020
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47. Preparation of macroporous silicon array by micromachining processes

Author

Wang Guozheng, Li Ye, Fu Shencheng, Wang Yang, Wang Xin, and Duanmu Qingduo

Subjects
Materials science, Silicon, Passivation, business.industry, chemistry.chemical_element, Substrate (electronics), Surface micromachining, chemistry, Etching (microfabrication), Optoelectronics, Wafer, Dry etching, Reactive-ion etching, business
Abstract

A macroporous silicon arrays (MSA) was prepared based on bulk-micromachining technology by both dry and wet etching processes respectively. In dry etching, MSA with 15–30 aspect ratio of the microchannel, 6–20 µm dimension of pore, 6–8 µm space were prepared by Inductively Coupled Plasma (ICP) etcher. It was shown that there are very differences in process of high aspect ratio microstructures between the deep pores, a closed structure, and the deep trenches, a open structure. The morphology and the aspect ratio dependent etching were analyzed and discussed. The macroporous silicon etched by ICP process yields an uneven, re-entrant, notched and ripples surface within the pores. The main factors effecting on the RIE lag of HARP etching are the passivation cycle time, the pressure of reactive chamber, and the platen power of ICP system. In wet process, an n-type silicon wafer was selected as the substrate for MSA with 50 of aspect ratio by photo-electrochemical (PEC) etching techniques. The electrochemical mechanism of silicon anisotropy etching were investigated and discussed. The results shown the electrochemical process for macroporous silicon arrays has lower cost and more simple steps than ICP process.

Published
2009

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