1. Effect of etching time on structure of p-type porous silicon.
- Author
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Kopani, Martin, Mikula, Milan, Kosnac, Daniel, Vojtek, Pavol, Gregus, Jan, Vavrinsky, Erik, Jergel, Matej, and Pincik, Emil
- Subjects
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ETCHING of porous silicon , *SILICON oxide , *AMORPHIZATION , *PHOTOLUMINESCENCE , *HYDROFLUORIC acid - Abstract
Highlights • Formation of amorphous Si-Ox layer with increasing roughness depending on etching time. • Amorphization of layer depending on etching time. • Formation of layer consisting of HySiOx and SiFxOy complexes. • Photoluminescence of hydrogenated amorphous silicon structures and H y SiO x complexes. Abstract Porous silicon (PSi) is a semiconductor produced by a dissolution p-type silicon wafers in hydrofluoric acid (HF) solution by applying a positive potential to a silicon electrode. We investigate the effect of etching time on morphology, structure and photoluminescence of PSi produced by a solution of hydrofluoric acid (HF) and methanol without UV irradiation. We found that surface structure depends strongly on etching time. From Fourier transform infrared spectroscopy and grazing incidence X-ray diffraction we suggest formation towards less-ordered amorphous phase of PSi. All samples reveal red-band photoluminescence. Although we observe different morphology of samples (channel-like morphology versus nanometer-sized hillocks morphology) slight effect on PL active structures (small red shift) was observed. We suggest that source of luminescence in our experiment is hydrogenated amorphous silicon structures and various H y SiO x complexes. We cannot rule out the effect of Si x F y O complexes. Surface morphology has small effect on photoluminescence. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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