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We study the quantum Hall effect (QHE) in the three-dimensional topological insulator HgTe, which features topological Dirac-type surface states in a bulk gap opened by strain. Despite the co-existence of multiple carrier subsystems, the system exhibits perfectly quantized Hall plateaus at high magnetic fields. Here we study the system using three different experimental techniques: Transport experiments, capacitance measurements including the quantum capacitance, and current distribution measurements using electrostatically sensitive scanning probe microscopy. Our key finding is that at sufficiently high magnetic fields, the different electronic subsystems merge into one, and the current in a quantum Hall plateau is distributed across the entire width of the Hall bar device., Comment: 9 pages, 9 figures. Submitted to PRR

The additive-free tetrazine/enol ether click reaction was performed in ultra-high vacuum (UHV) with an enol ether group covalently linked to a silicon surface: Dimethyl 1,2,4,5-tetrazine-3,6-dicarboxylate molecules were coupled to the enol ether group of a functionalized cyclooctyne which was adsorbed on the silicon (001) surface via the strained triple bond of cyclooctyne. The reaction was observed at a surface temperature of 380 K by means of X-ray photoelectron spectroscopy (XPS). No indications for tetrazine molecules which bind directly to the Si(001) surface via the nitrogen atoms were detected. A moderate energy barrier was deduced for this click reaction in vacuum by means of density functional theory based calculations, in good agreement with the experimental results. This UHV-compatible click reaction thus opens a new, flexible route for synthesizing covalently bound organic architectures.

In this paper, we propose a variational formulation to study the singular evolution equations that govern the dynamics of surface modulations on crystals below the roughening temperature. The basic idea of the formulation is to expand the surface shape in terms of a complete set of basis functions and to use a variational principle equivalent to the continuum evolution equations to obtain coupled nonlinear ordinary differential equations for the expansion coefficients. Unlike several earlier approaches that rely on ad hoc regularization procedures to handle the singularities in the evolution equations, the only inputs required in the present approach are the orientation dependent surface energies and the diffusion constants. The method is applied to study the morphological equilibration of patterned unidirectional and bidirectional sinusoidal modulations on semiconductor surfaces through surface diffusion.

We report on calculations of the formation energies of several [100] and [110] oriented step structures on biaxially stressed Si and Ge (001) surfaces. It is shown that a novel rebonded [100] oriented single-height step is strongly stabilized by compressive strain compared to most well-known step structures. We propose that the side walls of ``hut''-shaped quantum dots observed in recent experiments on SiGe/Si films are made up of these steps. Our calculations provide an explanation for the nucleationless growth of shallow mounds, with steps along the [100] and [110] directions in low- and high-misfit films, respectively, and for the stability of the (105) facets under compressive strain., Comment: to appear in Appl. Phys. Lett.; v2=minor corrections,figs resized

We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot, which can confine hole states exhibiting quantum ring characteristics. The magnetotunneling spectroscopy exhibits the predicted periodicity of energy states in \phi/\phi0, but the magnitude of the energy shifts is larger than predicted by simple ring theory. Our results suggest a new way to fabricate and study quantum ring structures., Comment: 16 pages, 4 figures

As a departure from existing continuum approaches for describing the stability and evolution of surfaces of crystalline materials, this article provides a description of surface evolution based on the physics of the main feature imposed by the discrete nature of the material, namely, crystallographic surface steps. It is shown that the formation energy of surface steps depends on the sign of extensional strain of the crystal surface, and this behavior plays a crucial role in surface evolution. The nature of this dependence implies that there is no energetic barrier to nucleation of islands on the growth surface during deposition, and that island faces tend toward natural orientations which have no counterpart in unstrained materials. This behavior is expressed in terms of a small number of parameters that can be estimated through atomistic analysis of stepped surfaces. The continuum framework developed is then applied to study the time evolution of surface shape of an epitaxial film being deposited onto a substrate. The kinetic equation for mass transport is enforced in a weak form by means of a variational formulation [...]., Comment: 25 pages, 7 figs, KEYWORDS=surface diffusion, surface energy, morphology evolution, semiconductor material, stability and bifurcation

Lattice mismatch in layered semiconductor structures with submicron length scales leads to extremely high nonuniform strains. This paper presents a finite element technique for incorporating the effects of the nonuniform strain into an analysis of the electronic properties of SiGe quantum structures. Strain fields are calculated using a standard structural mechanics finite element package and the effects are included as a nonuniform potential directly in the time independent Schrodinger equation; a k-p Hamiltonian is used to model the effects of multiple valence subband coupling. A variational statement of the equation is formulated and solved using the finite element method. This technique is applied to resonant tunneling diode quantum dots and wires; the resulting densities of states confined to the quantum well layers of the devices are compared to experimental current-voltage I(V) curves., Comment: 17 pages (LaTex), 18 figures (JPEG), submitted to Journal of Applied Physics