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BaSnO3, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining the device performance. We report on the experimental measurement of the electron saturation velocity in La-doped BaSnO3 thin films for a range of doping densities. The predicted saturation velocities based on a simple LO-phonon emission mode, using an effective LO phonon energy of 120 meV show good agreement with the measurements of velocity saturation in La-doped BaSnO3 films. Density-dependent saturation velocity in the range of 1.8 × 107 cm/s reducing to 2 × 106 cm/s is predicted for δ-doped BaSnO3 channels with carrier densities ranging from 1013 cm−2 to 2 × 1014 cm−2, respectively. These results are expected to aid the informed design of BaSnO3 as an active material for high-charge density electronic transistors. [ABSTRACT FROM AUTHOR]

Integration of ultrathin ferroelectric thin films with semiconductors is of interest for negative capacitance transistors that exhibit internal voltage gain, which may allow for scaling the supply voltage of low power circuits. In this study, BaTiO3 thin films were grown on doped SrTiO3 channels using molecular beam epitaxy. The BaTiO3 films are ferroelectric despite their low thickness (~10 nm). Parallel plate capacitor devices exhibit anti-clockwise hysteresis, and a comparison with reference structures without BaTiO3 shows that the polarization in the BaTiO3 thin films is switchable and controls the charge density in the channel. Field effect transistors were fabricated to study the effect of ferroelectricity on the transistor characteristics. Anti-clockwise hysteresis and a shift in threshold-voltage are observed in the output characteristics of the transistors. These properties make these heterostructures a suitable system for studying negative capacitance effects. [ABSTRACT FROM AUTHOR]

Parallel plate capacitors with quality factors exceeding 1000 were fabricated using Ba0.3Sr0.7TiO3 (BST) thin films grown by hybrid molecular beam epitaxy on epitaxial Pt bottom electrodes. The influence of film stoichiometry was investigated by varying the (Ba + Sr)/Ti ratio around the stoichiometric composition. The quality factor is highest for stoichiometric films, but (Ba + Sr)- rich films can be biased to higher fields. Furthermore, two different processes were used to deposit the top electrodes of the parallel plate capacitors. While the quality of the top contact/BST interface did not strongly affect the device quality factor, an enhancement in the dielectric tunability was seen for capacitors with top electrodes deposited at high temperatures, which effectively removes interfacial contamination layers. [ABSTRACT FROM AUTHOR]

The generation of a two-dimensional electron gas (2DEG) with unprecedented high density at the interface between two complex oxides has spurred interest in the growth and characterization of these materials. Interfaces between SrTiO3 and the rare-earth titanates SmTiO3 and GdTiO3 exhibit 2DEG densities of 3 × 1014 cm-2. Band alignments are key descriptors of these interfaces, and the authors report a joint experimental/computational investigation. Photoemission spectroscopy was used to measure the band alignments at the SmTiO3/GdTiO3 (110)o interface. In parallel, hybrid density functional calculations were performed. The measured and calculated band alignments for both the top of the O 2p band and the Ti 3d lower Hubbard band agree to within 0.13 eV. Our results also shed light on the position of the lower Hubbard band with respect to the O 2p valence band. [ABSTRACT FROM AUTHOR]

The fabrication, measurement, and modeling of radio-frequency (RF), tunable interdigital capacitors (IDCs) are described. High quality factors of 200 in the S/L-bands combined with a 47% tunability are achieved by utilizing epitaxial (Ba,Sr)TiO3 films grown by hybrid molecular beam epitaxy on LaAlO3 substrates. The fabricated devices consisted of one-port and two-port IDCs embedded in ground-signal-ground, coplanar waveguide transmission lines to enable RF probing. Wideband RF scattering parameters under bias were measured from 100 MHz to 40 GHz. A commutation quality factor averaging 6000 across the L band is achieved. These are the highest reported values in this band. [ABSTRACT FROM AUTHOR]