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A new study uses spectral elipsometry to investigate the complex dielectric interactions of two epitaxial layers of GaInAsSb/GaSb.

A study was conducted to analyze the optical constants of a series of CdTe(sub 1-x)S(sub x) (0

A far ultraviolet (UV) spectroscopic ellipsometry system working up to 9 eV is developed and applied to characterize high-K-dielectric materials. The spectroscopic date is explained in terms of a universal electronic structure energy scheme developed from ab initio quantum chemical calculations.

Deposition of nickel silicide nanowires has been achieved in the temperature range of 320 to 420 °C by decomposition of silane on nickel surfaces. The substrates consisted of Ni foils and thin Ni films (∼10–100 nm) evaporated on 1-μm-thick layers of SiO[sub 2] predeposited on Si wafers. Nanowire growth between two metal pads was achieved with aid of an electric field. It was found that thinner diameter nanowires were produced at low temperatures and that the density of the nanowires was dependent on the reactor pressure. The current–voltage relationship of these nanowires has also been examined. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Measures the minority carrier lifetime of silicon-on-insulator wafers on superficial silicon layer. Excitation of carriers by short wavelength photons; Detection of carriers through microwave reflectance; Elimination of free surface recombination velocity by hydrogen fluoride passivation.