7 results on '"Free-standing graphene"'
Search Results
2. Synthesis of free-standing graphene in atmospheric pressure microwave plasma for the oil-water separation application
- Author
-
Muhammad Adeel Zafar and Mohan V Jacob
- Subjects
Atmospheric pressure microwave plasma ,Free-standing graphene ,Methane-derived graphene ,Raman spectrum ,Scanning electron microscopy of graphene ,Materials of engineering and construction. Mechanics of materials ,TA401-492 ,Industrial electrochemistry ,TP250-261 - Abstract
The synthesis of free-standing graphene in a microwave plasma at ambient conditions is currently of great interest. The past works have relied on the usage of higher microwave powers to synthesize free-standing graphene which is not only costly but also an obstacle to the industrialization of the process. The aim of this work was to bring down the cost of the process by synthesizing graphene at a significantly lower microwave power, i.e. 250 W. The formation of graphene was confirmed through Raman spectrum and scanning electron microscopy, where the Raman spectrum showed the signature 2D peak of graphene, and the vertical orientation of the graphene was observed in the microscopic images. The application of graphene in oil-water separation is demonstrated based on its hydrophobic and oleophilic properties. The as-synthesized pristine graphene coated on a melamine sponge showed a mass absorption capacity (57 g/g) comparable to that of functionalized or composite graphene.
- Published
- 2022
- Full Text
- View/download PDF
3. Green synthesis of graphene for targeted recovery of silver from photovoltaic waste.
- Author
-
Zafar, Muhammad Adeel, Liu, Yang, and Jacob, Mohan V.
- Subjects
- *
ATMOSPHERIC pressure plasmas , *GRAPHENE synthesis , *WASTE minimization , *TRANSMISSION electron microscopy , *IMAGE transmission - Abstract
Atmospheric pressure microwave plasma can synthesize freestanding graphene in a few seconds at ambient conditions. Recent research has explored this method for the synthesis of graphene yet constrained by the utilization of toxic or non-renewable resources. This study aimed to substitute environmentally benign and sustainable precursors, synthesizing graphene from expired tangerine peel oil, an abundant natural source globally. The Raman spectrum of synthesized material showed a characteristic graphene-related 2D peak at microwave powers varied between 200 and 1000 W. The images of transmission electron microscopy revealed interstitial spacing of 0.34, which matched the value of X-ray diffraction calculated through Bragg's law. However, marginal variations in lattice spacing owing to the presence of oxygen functional groups were also observed. Additionally, the as-synthesized graphene deposited on a screen-printed electrode was used to selectively recover silver from spent photovoltaics. Our approach of creating a graphene-silver composite directly from waste material offers environmental benefits, resource utilization, waste reduction, and versatile applications in electrochemistry. [Display omitted] • Graphene with mild hydroxyl oxygen inclusions is synthesized from tangerine peel oil. • Microwave power significantly influences oxygen content attached to graphene. • Consistent interlayer spacing (0.34 nm) was confirmed through TEM and XRD. • Graphene exhibits a vertically oriented, curled-paper-like structure at all microwave powers. • Cyclic voltammetry analysis confirmed the recovery of silver from photovoltaic waste. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
- View/download PDF
4. Quasi free-standing epitaxial graphene fabrication on 3C-SiC/Si(111)
- Author
-
Amjadi Pour, Mojtaba, Tadich, Anton, Boeckl, John, Lipton-Duffin, Josh, MacLeod, Jennifer, Iacopi, Francesca, Motta, Nunzio, Amjadi Pour, Mojtaba, Tadich, Anton, Boeckl, John, Lipton-Duffin, Josh, MacLeod, Jennifer, Iacopi, Francesca, and Motta, Nunzio
- Abstract
Growing graphene on SiC thin films on Si is a cheaper alternative to the growth on bulk SiC, and for this reason it has been recently intensively investigated. Here we study the effect of hydrogen intercalation on epitaxial graphene obtained by high temperature annealing on 3C–SiC/Si(111) in ultra-high vacuum. By using a combination of core-level photoelectron spectroscopy, low energy electron diffraction, and near-edge x-ray absorption fine structure (NEXAFS) we find that hydrogen saturates the Si atoms at the topmost layer of the substrate, leading to free-standing graphene on 3C–SiC/Si(111). The intercalated hydrogen fully desorbs after heating the sample at 850 °C and the buffer layer appears again, similar to what has been reported for bulk SiC. However, the NEXAFS analysis sheds new light on the effect of hydrogen intercalation, showing an improvement of graphene's flatness after annealing in atomic H at 600 °C. These results provide new insight into free-standing graphene fabrication on SiC/Si thin films.
- Published
- 2018
5. Epitaxial graphene growth on 3C-SiC/Si(111): Towards semiconducting graphene
- Author
-
Amjadipour, Mojtaba and Amjadipour, Mojtaba
- Abstract
This project is a step forward in developing advanced two dimensional carbon-based materials for future nanoelectronics applications. It explores a new pathway towards nanoscale graphene fabrication compatible with the current semiconductor industry. Ribbons of graphene have been fabricated on silicon carbide wafers by nanoscale patterning as a first step towards developing graphene circuitry. A technology to decrease the interaction between the substrate and graphene has been developed to improve graphene flatness. The attenuation of electrons from the graphene layer have been also investigated, leading to a new insight in understanding electrons attenuation length.
- Published
- 2018
6. Chemical vapour deposition of freestanding sub-60 nm graphene gyroids
- Author
-
Giorgio Divitini, Piran R. Kidambi, Kenichi Nakanishi, Stephan Hofmann, Tomasz Cebo, Robert S. Weatherup, Caterina Ducati, Ullrich Steiner, James A. Dolan, Adrianus I. Aria, Aria, Indrat [0000-0002-6305-3906], Dolan, James [0000-0001-5019-1544], Weatherup, Robert [0000-0002-3993-9045], Nakanishi, Kenichi [0000-0003-3816-1806], Divitini, Giorgio [0000-0003-2775-610X], Ducati, Caterina [0000-0003-3366-6442], Hofmann, Stephan [0000-0001-6375-1459], and Apollo - University of Cambridge Repository
- Subjects
Chemical substance ,Materials science ,Physics and Astronomy (miscellaneous) ,Nanotechnology ,02 engineering and technology ,Chemical vapor deposition ,010402 general chemistry ,01 natural sciences ,law.invention ,law ,Free-standing graphene ,4018 Nanotechnology ,Nanoscopic scale ,40 Engineering ,Template stability ,Graphene ,Graphene foam ,Graphene nanostructure ,021001 nanoscience & nanotechnology ,CVD ,5104 Condensed Matter Physics ,Gyroid ,0104 chemical sciences ,Nanolithography ,Precursor predosing ,Block copolymer self-assembly ,Self-assembly ,0210 nano-technology ,51 Physical Sciences - Abstract
The direct chemical vapour deposition of freestanding graphene gyroids with controlled sub-60 nm unit cell sizes is demonstrated. Three-dimensional (3D) nickel templates were fabricated through electrodeposition into a selectively voided triblock terpolymer. The high temperature instability of sub-micron unit cell structures was effectively addressed through the early introduction of the car- bon precursor, which stabilizes the metallized gyroidal templates. The as-grown graphene gyroids are self-supporting and can be transferred onto a variety of substrates. Furthermore, they represent the smallest free standing periodic graphene 3D structures yet produced with a pore size of tens of nm, as analysed by electron microscopy and optical spectroscopy. We discuss generality of our methodology for the synthesis of other types of nanoscale, 3D graphene assemblies, and the trans- ferability of this approach to other 2D materials.
- Published
- 2018
- Full Text
- View/download PDF
7. Measurement of Topological Berry Phase in Highly Disordered Graphene
- Author
-
Thomas Szkopek, Keyan Bennaceur, Pierre L. Levesque, Abhishek Kumar, Stefan Heun, Cyril Proust, Mohamed Siaj, Mark Oliver Goerbig, Guillaume Gervais, Jonathan Guillemette, Richard Martel, Nicolas Cottenye, Farzaneh Mahvash, Yuya Murata, N. Hemsworth, Laboratoire national des champs magnétiques intenses - Toulouse (LNCMI-T), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
- Subjects
Physics ,Condensed matter physics ,Condensed Matter - Mesoscale and Nanoscale Physics ,Graphene ,Condensed Matter::Other ,Winding number ,FOS: Physical sciences ,Approx ,Quantum Hall effect ,Condensed Matter Physics ,Topology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Electronic, Optical and Magnetic Materials ,Magnetic field ,law.invention ,[PHYS.COND.CM-S]Physics [physics]/Condensed Matter [cond-mat]/Superconductivity [cond-mat.supr-con] ,Geometric phase ,law ,Quantum mechanics ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,Condensed Matter::Strongly Correlated Electrons ,FREE-STANDING GRAPHENE ,ELECTRONIC-PROPERTIES ,DENSITY ,COPPER ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience; We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C approximate to 0.1%. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudospin winding number, is robust against introduction of disorder by hydrogenation in large-scale graphene.
- Published
- 2015
- Full Text
- View/download PDF
Catalog
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.