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In this work, we investigate the correlation between tensile residual stress and Q-factor of double-clamped beams fabricated on epitaxial 3C-SiC layers grown on both and silicon substrates, using a completely optical measurement setup to measure the Q-factor of the resonators and the residual stress of the layers by means of purposely designed micromachined test structures. From the measurements, a clear correlation appears between the residual stress of the SiC layer and the Q-factor of the resonators, with Q-factor values above half a million for resonators fabricated on substrates, showing residual stress around 1 GPa.

In this work the purpose of the simulations is to optimize a new large volume Silicon Carbide (SiC) detector for 14.1 MeV neutrons. The device has an active thickness obtained by epitaxial growth and an active area of 25 mm2. In the first step of the simulations we compare SiC detector performance to Diamond and Silicon detectors, with the same geometric features. In the second step of the simulations we have found the best solution to improve the response of the detector for a fixed epitaxial layer thickness using an overlayer of aniline (C6H7N).

3C silicon carbide is a semiconductor with remarkable properties, making it ideal for the development of long lasting devices, working in harsh environments and under high particle flows. The most significant obstacle to its wider diffusion is the presence of extended, bidimensional and linear defects in its crystal lattice. The purpose of this research is to automatically recognize defects from a TEM image by algorithm that calculates distances and angles.

Silicon Carbide (SiC) has been demonstrated as both a bio- and neuro-compatible wide-band-gap semiconductor with a high thermal conductivity and magnetic susceptibility and may be potentially compatible with human brain tissue. Two single-crystal, solid-state forms of SiC have been used to create monolithic intracortical neural implants (INI) without using physiologically exposed metals or polymers, thus eliminating many known reliability challenges in-vivo through a single, homogenous material. Amorphous SiC (a-SiC) was used to insulate 16-channel functional INI and the electrochemical and MRI compatibility (7T) performance were measured. 4H-SiC interfaces were fabricated using homoepitaxy,alternating epitaxial films of n-type and p-type forming an isolating PN junction which prevents substrate leakage current between the 16 adjacent electrodes and traces fabricated which were formed using deep-reactive ion etching (DRIE). 3C-SiC interfaces were fabricated in a similar fashion, but the epitaial conductive layers were grown on on both bulk crystalline (100) silicon and SOI wafers. In both cases a conformal coating of a-SiC was used as the top-side insulator and windows opened using RIE to allow electrochemical interaction. Electrochemical charaterization achieved through electrochemcial impedance spectroscopy (EIS) and cyclic voltammetry (CV) indicates performance on par, or exceeding, that of Pt reference electrodes with the same form fit. While magnetic resonance imaging (MRI) is an essential, non-contact method used to investigate issues with the nervous system, the high field MRI (e.g., 3 T and higher) necessary for proper diagnosis can be a safety issue for patients with INI due to inductive coupling between the powerful electromagnetic fields and the implanted device. This results in having to use lower electromagnetic field power (less than 1.5T), and therefore lower resolution, which hinders diagnostic prognosis for these patients. In this work the MRI compliance of epitaxial, monolithic SiC INI was studied. The specific absorption rate (SAR), induced heating, and image artifacts caused by the portion of the implant within a brain tissue phantom located in a 7 T small animal MRI machine were estimated and measured via finite element method (FEM) and Fourier-based simulations. Both the simulation and experimental results revealed that free-standing 3C-SiC films had no observable image artifacts compared to silicon and platinum reference materials inside the MRI at 7 T while FEM simulations predicted an ~30% SAR reduction for 3C-SiC compared to Pt. These initial simulations and experiments indicate a SiC monolithic INI may effectively reduce MRI induced heating and image artifacts in high field MRI.

This paper presents a macro-and nanoscale electrical investigation of Schottky and metal-oxide junctions with hetero-epitaxial 3C-SiC layers grown on Si. Statistical current-density-voltage (J-V) characterization of Pt/3C-SiC Schottky diodes showed an increase of the reverse leakage current with increasing the devices diameters. Furthermore, C-V and J-V analyses of SiO2/3C-SiC capacitors revealed non-idealities of the thermal oxide, such as a high trapped positive charge (3×1012 cm−2) and a reduced breakdown field (EBD=6.5 MV/cm) compared to ideal SiO2. Nanoscale electrical characterizations by conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM) allowed to shed light on the origin of non-ideal behavior of Schottky and thermal oxide junctions, by correlating the morphological features associated to 3C-SiC crystalline defects with local current transport and carrier density.

In the present work a deep characterization of 4H-SiC epi-layer was done. A thick layer was epitaxially grown through chemical vapor deposition (CVD) process in a horizontal hot-wall reactor in order to obtain a 250 microns thick epi-layer. This sample will be used as particle detector in hostile environments such as neutron detection in a nuclear fusion reactor. Raman and Photoluminescence (PL) spectroscopy have been used in order to evaluate the general status of epitaxy and, with the support of the Time Resolved Photoluminescence, also important properties such as carrier lifetime and diffusion length have been evaluated. Carrier lifetime evaluation before and after a thermal oxidation process at 1400° C for 48h was estimated, by considering a lifetime increment after oxidation process, due to the decrease of carbon vacancies. Finally, the influence of stacking fault (SF) defects on carrier lifetime was evaluated observing a decrease of the lifetime for the defects at 430 nm (2.88 eV) for both oxidated and non-oxidated samples.

One setback that hinders the breakthrough of cubic silicon carbide is the lack of suitable seeding material for sublimation growth methods such as PVT. We present the growth of large area cubic silicon carbide material, up to a diameter of 100 mm, with a sublimation growth process called close spaced PVT (CS-PVT). Freestanding 3C‑SiC seeding layers were grown by a homoepitaxial CVD process. Subsequently CS-PVT was used to grow crystals up to a thickness of 1 mm. To prevent backside sublimation a carbon containing layer was applied as protection. Due to the presence of a wafer bow as well as a rough backside of the used seeds additional effort was necessary to apply the coating. After growth no visible curvature was present independent of the grown layer thickness and sample size. Raman spectroscopy was performed on the seeds and grown crystals, showing that the overall stress level of the material was reduced by CS‑PVT.

This paper discusses a novel annealing technique for 4H-SiC implants which involves the use of pulsed XeCl laser (l=308 nm). In particular, an absorbing graphitic coating is used to protect the sample from surface atoms desorption or phase separation. Both conventional furnace annealing and laser annealing on P and Al implants, commonly employed for source and body in metal-oxide-semiconductor field-effect transistors (MOSFETs), were examined through Transmission Electron Microscopy (TEM), u-Raman spectroscopy and Scanning Electron Microscopy (SEM). It is shown that the implant activated through traditional thermal annealing at 1650 °C for 30 min has a large network of dislocation loops, while they do not appear to be present in the laser annealed implant. Through Raman spectroscopy and SEM investigations both the crystalline quality of the laser annealed sample and the integrity of the surface were attested.

In this paper, we used micro-Raman spectroscopy in cross-section to investigate the effect of different doping on the distribution of stress in the silicon substrate and the grown 3C-SiC film. The 3C-SiC films with a thickness up to 10 μm were grown on Si (100) substrates in a horizontal hot-wall chemical vapor deposition (CVD) reactor. To quantify the influence of doping on the stress distribution, samples were non-intentionally doped (NID, dopant incorporation below 1016cm−3), strongly n-type doped ([N] > 1019cm−3), or strongly p-type doped ([Al] > 1019cm−3). Sample NID was also grown on Si (111). In silicon (100), we observed that the stress at the interface is always compressive. In 3C-SiC, instead, we observed that the stress at the interface is always tensile and remains so in the first 4 µm. In the remaining 6 µm, the type of stress varies according to the doping. In particular, for 10 μm thick samples, the presence of an n-doped layer at the interface maximizes the stress in the silicon (~700 MPa) and in the 3C-SiC film (~250 MPa). In the presence of films grown on Si(111), 3C-SiC shows a compressive stress at the interface and then immediately becomes tensile following an oscillating trend with an average value of 412 MPa.

We report the study of the effect of the growth rate and of the doping on the stress and the defect density of a Cubic Silicon Carbide (3C-SiC) bulk layer grown at low temperature on a silicon substrate. After the growth process, the silicon substrate was melt inside the CVD reactor used for the deposition and then the intrinsic stress was measured by the curvature of the wafer without influence of the thermal stress between silicon and 3C-SiC. A considerable increase of the curvature was observed increasing the doping of the layer. The average stress is compressive and then produces a convex bow. At the same time, the average quality of the grown material deteriorates increasing the doping concentration. Using μ-Raman measurement in cross-section of the 3C-SiC grown samples, it was possible to observe the dependence of the stress and of the quality of the material as a function of the thickness and of the growth rate, due to the variation of the growth rate during the process. In particular, the increase of the growth rate produced both an increase of the stress and a decrease of the material quality. Furthermore, the increase of the doping concentration produced both an increase of the stress and a further deterioration of the crystal quality.

The review on bulk growth of SiC includes a basic overview on the widely used physical vapor transport method for processing of 4H-SiC boules as well as the discussion of three current research topics: (a) Sublimation bulk growth of large area, freestanding cubic SiC, (b) in-situ Visualization of the PVT Process using 2D and 3D X-ray based imaging and (c) prediction of dislocation formation and motion in SiC using a continuum model of dislocation dynamics (CDD).

This study offers a comprehensive examination of the behavior of 3C-SiC crystals grown on 4° off-axis (100) Si substrates with different off-axis angles along and for N and Al doping, respectively. The investigation takes advantage of molten KOH etching to conduct an in-depth investigation of the average density and size of the SFs inside the crystal for both n- and p-type doped 3C-SiC epitaxial layers. Moreover, 3C-SiC grown on a off-cut substrate was revealed to have a greater concentration of SFs due to the absence of self-annihilation along the plane (-1-10). Considering two different doping ranges suitable for IGBTs and MOSFETs development, the impact of doping and off-angle on the crystal quality, concentration, and length distribution of SFs was then investigated in order to quantify the influence of N and Al incorporation on the structural and optical characteristics of the semiconductor. It turned out that under heavy nitrogen doping (~1019 cm-3), when the dopant concentration grew, the average length of the stacking faults (SFs) expanded while their density dropped.

In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two different approaches have been used in the last years. From one side, several compliance substrates have been used to try to reduce both the defects and stress, while from another side, the first bulk growth has been performed to try to improve the quality of this material with respect to the heteroepitaxial one. From all these studies, a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters. This new knowledge will be the basis to solve the main issue of the 3C-SiC growth and reach the goal to obtain a material with low defects and low stress that would allow for realizing devices with extremely interesting characteristics. Funding Agencies|European UnionEuropean Commission [720827]

This AIP article is published under license by AIP: https://publishing.aip.org/wp-content/uploads/2019/10/AIPP-Author-License.pdf A low p-n built-in potential (1.75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. In this work, we present the fabrication and characterization of a vertical PiN diode using bulk 3C-SiC material. A p-type ohmic contact was obtained on Al implanted regions with a specific contact resistance ∼10 Ω cm. The fabricated PiN diode has a low forward voltage drop of 2.7 V at 1000 A/cm, and the on-off ratio at ±3 V is as high as 10. An ideality factor of 1.83-1.99 was achieved, and a blocking voltage of ∼110 V was observed using a single-zone junction termination design.

In this work many steps concerning the epitaxial layer growth on 4H-SiC are studied, evaluated and optimized to obtain high quality 4H-SiC epitaxy. The processes evaluated have been studied on a Hot Wall CVD reactor. The first step related to the substrate surface etching has been tuned by choosing the H2 flow, temperature and process time at which most of defects (mainly stacking faults) are not propagated. Then, the buffer layer step has been optimized by increasing the thickness at which an effective reduction of defect density and an improved electrical performance of power devices have been detected. Also, during the buffer layer growth a strong dependence between basal plane dislocations propagation and the growth rate has been observed. A crucial step carefully studied has been the drift layer growth. It was optimized by increasing the growth rate (13

This paper reports on the formation and characterization of Ohmic contacts to n-type and p-type type 3C-SiC layers grown on silicon substrates. In particular, Ohmic contact behavior was obtained either using Ni or Ti/Al/Ni layers annealed at 950°C. The values of the specific contact resistance ρcestimated by means of circular TLM (C-TLM) structures varied in the range ~ 10-3-10-5Ωcm2, depending on the doping level of the 3C-SiC layer. A structural analysis performed by X-Ray Diffraction (XRD) allowed to identify the main phases formed upon annealing, i.e., Ni2Si and Al3Ni2. The morphology of the reacted contacts depended on that of the underlying substrate. The results can be useful for the development of a variety of devices on the cubic 3C-SiC polytype.

We present three different ways of transferring 3C-SiC layers grown on silicon on top of a SiC carrier using a carbon glue layer. Our main focus was upon the growth on the transition layer, as 3C-SiC does not feature any polarities in the or direction. We realized a stable and reproducible process by following a wet chemical approach, dealing with the difficulties of handling thin but freestanding 3C-SiC layers. By using this way, we transferred approximately 130 μm thick pieces using their horizontal hot-wall reactor (M10), which were chemo mechanically polished and afterwards fixed on our SiC carriers. Implementing such a seeding stack into our growth setup, we managed to grow between 20 μm and 130 μm thick layers on top. We have proven the possibility to grow on the transition layer. Furthermore, we observed a slight reduction in protrusion density, which is currently one of the main defects in such layers.

The effect of varying growth rate on the formation of defects in homo-epitaxially grown cubic silicon carbide (3C-SiC) is studied. Three growth rates are considered (30, 60 and 90 μm/hr) demonstrating that as the growth rate increases the density of point defects, as demonstrated by photo- luminescence, and stacking faults (SFs), as measured by a KOH etching procedure, increase. Scanning transmission electron microscopy images demonstrate generation, annihilation and closure of SFs as a function film thickness. High resolution X-ray diffraction is used to uncover the higher quality of homo-epitaxial with respect hetero-epitaxial films through the examination of the sample mosaicity and SF density.

We present an investigation of the structural quality of arrays of 3C-SiC micropillars and microridges grown epitaxially on deeply etched Si(0 0 1) substrates offcut towards [1 1 0]. Using high resolution X-ray diffraction with reciprocal space mapping and optical as well as scanning electron microscopy, we obtain information about the stacking fault (SF) formation in different crystallographic directions. The SF density is strongly correlated with the microcrystal size and orientation and a reduction of the SF density is found in the [1 1 1] and [1 −1 1] directions. No variation of the average SF size was detected for varying SiC microcrystal size and shape.

In this work, the annihilation mechanism of stacking faults (SFs) in epitaxial 3C-SiC layers grown on Si(001) substrates is studied by molecular dynamics (MD) simulations. The evolution of SFs located in the crossing (1̄11) and (11̄1) glide planes is considered. This evolution is determined by the interaction of 30° leading partial dislocations (PDs) limiting the stacking faults under the slightly compressive (∼0.45%) strain condition during the 3C-SiC layer growth. It is characterized in key terms: the distance between the PDs and the mutual orientation of their Burgers vectors. Two SF annihilation scenarios are revealed. In the first scenario, two PDs with opposite screw components of Burgers vectors, leading the SFs located in the (1̄11) and (11̄1) planes, are close enough (∼15 nm or less) and attract each other. As a result, the propagation of both SFs is suppressedviathe formation of a Lomer-Cottrell lock at their intersection. In the second scenario, two PDs are far away one from the other (beyond ∼15 nm) and do not interact, or they repulse each other having equal screw components of their Burgers vectors. In this case, the propagation of only one of the SFs is suppressed. Obtained results explain the mechanism of SF annihilation and formation of SF intersection patterns experimentally observed by TEM investigations. They will provide important implications for the elaboration of advanced methods for the reduction of SF concentrations in epitaxial 3C-SiC layers on Si substrates.

NUMEN proposes an innovative technique to access the nuclear matrix elements entering the expression of the lifetime of the double beta decay by cross-section measurements of heavy-ion induced Double Charge Exchange (DCE) reactions. Despite the fact that the two processes, namely neutrinoless double beta decay and DCE reactions, are triggered by the weak and strong interaction respectively, important analogies are suggested. The basic point is the coincidence of the initial and final state many-body wave functions in the two types of processes and the formal similarity of the transition operators. The main experimental tools for this project are the K800 Superconducting Cyclotron and MAGNEX spectrometer at the INFN-LNS laboratory. However, the tiny values of DCE cross-sections and the resolution requirements demand beam intensities much higher than those manageable with the present facility. The on-going upgrade of the INFN-LNS facilities promoted by the POTLNS a project in this perspective is intimately connected to the NUMEN project. This paper describes the solutions proposed as a result of the R&D activity performed during the recent years. The goal is to develop suitable technologies allowing for the measurements of DCE cross-section under extremely high beam intensities. a PIR01_00005 — potenziamento dell’infrastruttura di ricerca Laboratori Nazionali del Sud per la produzione di fasci di ioni ad alta intensitá.

The use of wide-band-gap solid-state neutron detectors is expanding in environments where a compact size and high radiation hardness are needed, such as spallation neutron sources and next-generation fusion machines. Silicon carbide is a very promising material for use as a neutron detector in these fields because of its high resistance to radiation, fast response time, stability and good energy resolution. In this paper, measurements were performed with neutrons from the ISIS spallation source with two different silicon carbide detectors together with stability measurements performed in a laboratory under alpha-particle irradiation for one week. Some consideration to the impact of the casing of the detector on the detector’s counting rate is given. In addition, the detector response to Deuterium-Deuterium (D-D) fusion neutrons is described by comparing neutron measurements at the Frascati Neutron Generator with a GEANT4 simulation. The good stability measurements and the assessment of the detector response function indicate that such a detector can be used as both a neutron counter and spectrometer for 2–4 MeV neutrons. Furthermore, the absence of polarization effects during neutron and alpha irradiation makes silicon carbide an interesting alternative to diamond detectors for fast neutron detection.

An essential method to investigate neuromodulation effects of an invasive neural interface (INI) is magnetic resonance imaging (MRI). Presently, MRI imaging of patients with neural implants is highly restricted in high field MRI (e.g., 3 T and higher) due to patient safety concerns. This results in lower resolution MRI images and, consequently, degrades the efficacy of MRI imaging for diagnostic purposes in these patients. Cubic silicon carbide (3C-SiC) is a biocompatible wide-band-gap semiconductor with a high thermal conductivity and magnetic susceptibility compatible with brain tissue. It also has modifiable electrical conductivity through doping level control. These properties can improve the MRI compliance of 3C-SiC INIs, specifically in high field MRI scanning. In this work, the MRI compliance of epitaxial SiC films grown on various Si wafers, used to implement a monolithic neural implant (all-SiC), was studied. Via finite element method (FEM) and Fourier-based simulations, the specific absorption rate (SAR), induced heating, and image artifacts caused by the portion of the implant within a brain tissue phantom located in a 7 T small animal MRI machine were estimated and measured. The specific goal was to compare implant materials, thus, the effect of leads outside the tissue was not considered. The results of the simulations were validated via phantom experiments in the same 7 T MRI system. The simulation and experimental results revealed that free-standing 3C-SiC films had little to no image artifacts compared to silicon and platinum reference materials inside the MRI at 7 T. In addition, FEM simulations predicted an ~30% SAR reduction for 3C-SiC compared to Pt. These initial simulations and experiments indicate an all-SiC INI may effectively reduce MRI induced heating and image artifacts in high field MRI. In order to evaluate the MRI safety of a closed-loop, fully functional all-SiC INI as per ISO/TS 10974:2018 standard, additional research and development is being conducted and will be reported at a later date.

Domain boundaries (DBs) generated during the growth of cubic silicon carbide (3C-SiC) on (001) Si and their interaction with stacking faults (SFs) were studied in this work. Direct scanning transmi...

Stacking Faults (SFs) are the main defect of 3C-SiC material and in this work a detailed study of this typology of defect is presented. We studied the behavior of SFs with High Resolution XRD and STEM analysis. The homo-epitaxial growth was proposed as a solution for the reduction of SFs density in 3C-SiC material and the influence of the growth condition on the SFs density was studied. The knowledge of the mechanism of SFs reduction is crucial for the development of a high quality material for devices fabrication.

In this work the deposition of buffer layer has been studied in order to increase the quality of the epitaxial layer and improve the performance of device. The comparison between two different thicknesses of buffer layer reveals a decrease of crystallographic defects and an improvement of electrical parameters of MOSFET device as leakage current and breakdown voltage.

3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (high Young’s modulus and low density) that allow the device to be operated for a given geometry at higher frequency. The mechanical properties of this material depend strongly on the material quality, the defect density, and the stress. For this reason, the use of SiC in Si-based microelectromechanical system (MEMS) fabrication techniques has been very limited. In this work, the complete characterization of Young’s modulus and residual stress of monocrystalline 3C-SiC layers with different doping types grown on and oriented silicon substrates is reported, using a combination of resonance frequency of double clamped beams and strain gauge. In this way, both the residual stress and the residual strain can be measured independently, and Young’s modulus can be obtained by Hooke’s law. From these measurements, it has been observed that Young’s modulus depends on the thickness of the layer, the orientation, the doping, and the stress. Very good values of Young’s modulus were obtained in this work, even for very thin layers (thinner than 1 μm), and this can give the opportunity to realize very sensitive strain sensors.

The presence of extended bi-dimensional defects is one of the key issues that hinder the use of wide band-gap materials hetero-epitaxially grown on silicon. In this work, we investigate, by STEM measurements and molecular dynamic simulations, the structure of two of the most important extended defect affecting the properties of cubic silicon carbide, 3C-SiC, hetero-epitaxially grown on (001) silicon substrates: (1) stacking faults (SFs) with their bounding threading dislocation arms, even along with unusual directions, and (2) inverted domain boundaries (IDBs). We found that these two defects are strictly correlated: IDBs lying in {111} planes are intrinsically coupled to one or more SFs. Moreover, we observed that threading partial dislocations (PDs), limiting the SFs, appear to have non-conventional line directions, such as [112], [123], and [134]. Molecular dynamics simulations show that [110] and [112] directions allow for stable dislocation structures, while in the unusual [123] and [134] directions, the PDs are composed of zig-zag dislocation lines in the [112] and [110] directions.

A new technique with micro-Raman and micro-PL analysis is proposed to detect defects in 3C-SiC epitaxial films. The high-power of an above band-gap laser is used to increase locally the free carriers density in un-doped epitaxial material (n < 1016 cm-3). The electronic plasma couples with the longitudinal optical (LO) Raman mode determining the so-called LOPC effect. The Raman shift of the LO phonon-plasmon-coupled mode (LOPC) changes as the free carriers density is modified. Crystallographic defects induce a modification of the free carriers density determining a change in the Raman shift of LO mode and in the PL emission from the 3C-SiC gap. Thus we suppose that the results observed are connected to crystallographic defects and we propose this technique as a methodology to analyze extended defects in 3C-SiC material because a detailed study of defects in 3C-SiC has not yet been performed.

3C-SiC layers (7 and 15 μm thick), epitaxially grown on silicon, were covered with gold nanoparticles by immersion in a solution containing HF and KAuCl4. The surface of the layers played a crucial role in the morphology of the deposited metal network and large gold agglomerates developed on the pronounced antiphase domain boundaries of the thinner layer. Preferential growth was not observed on the smooth surface of the 15 μm thick layer. Rutherford backscattering spectrometry and electron microscopy outlined a progressive nucleation that takes place for less than 60 s immersion times under a kinetic control process. For longer deposition time each cluster grows under a diffusion control process, resulting in flower-like gold particles. However, the nucleation and growth processes can be strongly modified by multiple immersions in solution after rinsing in water. The adopted procedure allows the tailoring of the particles size and avoids the aggregation, therefore improving by about 1 order of magnitude t...

This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epitaxial layers. Samples were then characterized through micro-Raman spectroscopy, Photoluminescence (PL) and Transmission Electron Microscopy (TEM) and results were compared with those coming from P implanted thermally annealed samples at 1650&ndash, 1700&ndash, 1750 &deg, C for 1 h as well as P and Al implanted samples annealed at 1650 &deg, C for 30 min. The activity outcome shows that laser annealing allows to achieve full crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Moreover, laser treated crystal shows an almost stress-free lattice with respect to thermally annealed samples that are characterized by high point and extended defects concentration. Laser annealing process, instead, allows to strongly reduce carbon vacancy (VC) concentration in the implanted area and to avoid intra-bandgap carrier recombination centres. Implanted area was almost preserved, except for some surface oxidation processes due to oxygen leakage inside the testing chamber. However, the results of this experimental activity gives way to laser annealing process viability for damage recovery and dopant activation inside the implanted area.