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Semiconductor nanostructures with low dimensionality like quantum dots and quantum dashes are one of the best attractive and heuristic solutions for achieving high performance photonic devices. When one or more spatial dimensions of the nanocrystal approach the de Broglie wavelength, nanoscale size effects create a spatial quantization of carriers leading to a complete discretization of energy levels along with additional quantum phenomena like entangled-photon generation or squeezed states of light among others. This article reviews our recent findings and prospects on nanostructure based light emitters where active region is made with quantum-dot and quantum-dash nanostructures. Many applications ranging from silicon-based integrated technologies to quantum information systems rely on the utilization of such laser sources. Here, we link the material and fundamental properties with the device physics. For this purpose, spectral linewidth, polarization anisotropy, optical nonlinearities as well as microwave, dynamic and nonlinear properties are closely examined. The paper focuses on photonic devices grown on native substrates (InP and GaAs) as well as those heterogeneously and epitaxially grown on silicon substrate. This research pipelines the most exciting recent innovation developed around light emitters using nanostructures as gain media and highlights the importance of nanotechnologies on industry and society especially for shaping the future information and communication society., Quantum dot are one of the best practical examples of nanotechnologies. Owing to the discrete energy levels, quantum dot lasers output unique features like thermal stability, feedback insensitivity and spectral purity.

Space-to-ground high-speed transmission is of utmost importance for the development of a worldwide broadband network. Mid-infrared wavelengths offer numerous advantages for building such a system, spanning from low atmospheric attenuation to eye-safe operation and resistance to inclement weather conditions. We demonstrate a full interband cascade system for high-speed transmission around a wavelength of 4.18 µm. The low-power consumption of both the laser and the detector in combination with a large modulation bandwidth and sufficient output power makes this technology ideal for a free-space optical communication application. Our proof-of-concept experiment employs a radio-frequency optimized Fabry–Perot interband cascade laser and an interband cascade infrared photodetector based on a type-II InAs/GaSb superlattice. The bandwidth of the system is evaluated to be around 1.5 GHz. It allows us to achieve data rates of 12 Gbit/s with an on–off keying scheme and 14 Gbit/s with a 4-level pulse amplitude modulation scheme. The quality of the transmission is enhanced by conventional pre- and post-processing in order to be compatible with standard error-code correction.

The four-wave mixing conversion efficiency of quantum dot laser is much higher than that of quantum well. These results are important for self-mode-locked pulse production and high-bandwidth optical frequency comb generation.

International audience; This study deals with the communication capabilities of two kinds of semiconductor lasers emitting in one of the atmosphere transparency windows, around 4 µm. One of these two lasers is a quantum cascade laser and the other one is an interband cascade laser. With the quantum cascade laser, a subsequent attenuation is added to the optical path in order to mimic the attenuation of free-space transmission of several kilometers. Direct electrical modulation is used to transmit the message and two-level formats, non-return-to-zero and return-to-zero, are used and compared in terms of maximum transmission data rate. The sensitivity to optical feedback is also analyzed, as well as the evolution of the error rate when reducing the optical power at the level of the detector. This work provides a novel insight into the development of future secure free-space optical communication links based on midinfrared semiconductor lasers and sheds the light on improvements required to achieve multi-Gbits/s communication with off-the-shelf components. Index Terms-Quantum cascade laser, interband cascade laser, mid-infrared photonics, free-space communication. I. INTRODUCTION T HE development of semiconductor laser technology was considerably boosted with inventing quantum cascade lasers (QCLs) in early 90s [1] and interband cascade lasers (ICLs) shortly afterwards [2]. At the early stages of QCLs, free-space optical transmissions were envisioned [3] alongside Manuscript

Combination of interband cascade laser and interband cascade infrared pho-todetector allows demonstrating free-space transmission at 16 GBit/s in the thermal atmospheric window around 4 µm, paving the way towards energy-efficient mid-infrared communication.

Photonic integrated circuits (PICs) have enabled numerous high performance, energy efficient, and compact technologies for optical communications, sensing, and metrology. One of the biggest challenges in scaling PICs comes from the parasitic reflections that feed light back into the laser source. These reflections increase noise and may cause laser destabilization. To avoid parasitic reflections, expensive and bulky optical isolators have been placed between the laser and the rest of the PIC leading to large increases in device footprint for on-chip integration schemes and significant increases in packaging complexity and cost for lasers co-packaged with passive PICs. This review article reports new findings on epitaxial quantum dot lasers on silicon and studies both theoretically and experimentally the connection between the material properties and the ultra-low reflection sensitivity that is achieved. Our results show that such quantum dot lasers on silicon exhibit much lower linewidth enhancement factors than any quantum well lasers. Together with the large damping factor, we show that the quantum dot gain medium is fundamentally dependent on dot uniformity, but through careful optimization, even epitaxial lasers on silicon can operate without an optical isolator, which is of paramount importance for the future high-speed silicon photonic systems.

This study investigates chaotic and spiking dynamics of mid-infrared quantum cascade lasers operating under external optical feedback and emitting at 5.5 $\mu {\text{m}}$ and 9 $\mu {\text{m}}$ . In order to deepen the understanding, the route to chaos is experimentally studied in the case of continuous-wave and current modulation operation. The non-linear dynamics are analyzed with bifurcation diagrams. While for quasi-continuous wave operation, chaos is found to be more complex, pure continuous wave pumping always leads to the generation of a regular spiking induced low-frequency fluctuations dynamics. In the latter, results show that by combining external optical feedback with periodic forcing and further induced current modulation allows a better control of the chaotic dropouts. This work provides a novel insight into the development of future secure free-space communications based on quantum cascade lasers or unpredictable optical countermeasure systems operating within the two transparency atmospheric windows hence between 3 $\mu {\text{m}}$ –5 $\mu {\text{m}}$ and 8.5 $\mu {\text{m}}$ –11 $\mu {\text{m}}$ .

This paper investigates the intensity noise and pulse oscillation characteristics of an InAs/GaAs quantum dot laser epitaxially grown on germanium. We show that the relative intensity noise of the free-running laser generally decreases with increasing pump current, and the minimum value reaches down to about $-$ 126 dB/Hz. The intensity noise is hardly affected by the optical feedback, unless there is a resonance or pulse oscillation in the noise spectrum. The laser pumped at a high current is more sensitive to the optical feedback. Interestingly, it is found that the free-running Ge-based quantum dot laser generates self-sustained pulse oscillations with one period or two periods upon the pump current, without incorporating saturable absorbers. This behavior is valuable for both self-generation of photonic microwaves and for understanding nonlinear dynamics of semiconductor lasers.

Mid-infrared free-space optical communication has a large potential for high speed communication due to its immunity to electromagnetic interference. However, data security against eavesdroppers is among the obstacles for private free-space communication. Here, we show that two uni-directionally coupled quantum cascade lasers operating in the chaotic regime and the synchronization between them allow for the extraction of the information that has been camouflaged in the chaotic emission. This building block represents a key tool to implement a high degree of privacy directly on the physical layer. We realize a proof-of-concept communication at a wavelength of 5.7 μm with a message encryption at a bit rate of 0.5 Mbit/s. Our demonstration of private free-space communication between a transmitter and receiver opens strategies for physical encryption and decryption of a digital message., Free-space communication in the mid-IR domain has many potential applications, but security is still challenging. Here, the authors use chaos synchronization in a QCL-based free-space link as a way to increase privacy of such transmissions.

We demonstrate a free-space transmission with a direct electrical modulation in a quantum cascade laser emitting in one of the transparency windows of the atmosphere, near $8.1\ \mu \mathrm{m}$ . The advantages of the presented work are a room-temperature setup, real-time high-speed operation and low-power consumption.

The nonlinear features of both semiconductor optical amplifiers (SOAs) and semiconductor lasers, which are made from the same InAs/GaAs quantum dot (QD) wafers, are investigated in detail. By employing pump-probe driven four-wave mixing as an experimental tool, the wave conversion process shows notably different profiles for the two types of devices. Due to the contributions of ultrafast, sub-picosecond mechanisms, such as carrier heating and spectral hole burning, the pump-probe frequency can be easily tuned to the THz range. SOAs generally benefit more from sub-picosecond carrier dynamics, hence exhibiting a higher conversion efficiency (CE) in the THz range, compared to their laser diode counterparts. The discrepancy even exceeds 10 dB. In addition, laser experiments yield some differences from the amplifier ones, hence leading to a higher nonlinear CE at small detuning ranges. These results strongly improve our insight into the fundamental nonlinear properties of InAs/GaAs QD material, and contribute to the conception of novel devices for future on-chip applications in all-optical communication networks, such as signal wavelength conversion, mode-locking, and optical frequency comb generation.

International audience

We report on the first experimental chaos synchronization in mid-infrared quantum cascade lasers and subsequently perform private free-space transmission at a bit-rate of 0.5 Mbits/s. The quality of the privacy is assessed with eye diagrams, both at the legitimate receiver side and illegitimate receiver side.

International audience

We semianalytically and numerically investigate the static and dynamical characteristics of quantum-dot (QD) lasers directly grown on silicon by considering the Shockley-Read-Hall (SRH) recombination. The static characteristics are studied through small-signal analysis, including the ${\ensuremath{\alpha}}_{H}$ factor, damping factor, and modulation dynamics. In addition, the feedback dynamics are analyzed through improved corpuscular rate equations based on the classical Lang-Kobayashi (LK) model with time series, bifurcation diagrams, and phase portraits. We find that a smaller ${\ensuremath{\alpha}}_{H}$ factor but larger damping factor are obtained by decreasing the nonradiative recombination lifetime. On top of that, in both the short- and long-external-cavity regimes, any decrease of the SRH recombination lifetime obliterates significantly chaotic regions and shifts the first Hopf bifurcation point to higher feedback values. Overall, this work provides insights into the understanding of QD laser physics, hence highlighting the influence of the SRH lifetime on the reflection sensitivity of epitaxial QD lasers on silicon. These results are qualitatively consistent with recent experiments and are therefore helpful for designing feedback-resistant lasers for future photonic integrated circuits operating without optical isolation.

Silicon-based epitaxial quantum dot (QD) lasers with strong tolerance for back-reflections have paved the way for developing isolator-free photonics integrated circuits (PICs). This remarkable feature is attributed to the peculiar benefits of QDs, including a large material gain, a strong damping, and a small linewidth enhancement factor [1] . The laser performance can also be optimized by applying p-modulation doping in the active region [1] . In a previous study, the sensitivity of epitaxial QD lasers on silicon subject to short- and long-delay optical feedback were performed [2] . On the top of that, a further investigation of the feedback dynamics on the intra- and inter-chip scale is of significant importance for photonic integration applications.

International audience; We experimentally display temporal chaotic waveforms in the mid-infrared domain with two different types of semiconductor lasers. The generated high-dimensional non-linear dynamics are of prime interest for private communications and physical random number generation.

This letter reports on a 1.3- $\mu \text{m}$ reflection insensitive transmission with a quantum dot laser directly grown on silicon in the presence of strong optical feedback. These results show a penalty-free transmission at 10 GHz under external modulation with −7.4-dB optical feedback. The feedback insensitivity results from the low linewidth enhancement factor, the high damping, the absence of off-resonance emission states, and the shorter carrier lifetime. This letter paves the way for future on chip high-speed integrated circuits operating without optical isolators.

Quantum cascade lasers (QCLs) are optical sources exploiting radiative intersubband transitions within the conduction band of semiconductor heterostructures.1 Mid-infrared QCLs have been thoroughly considered for applications such as spectroscopy,2 free-space communications3 and countermeasure systems.4 Under self-optical feedback, QCLs have been proven to operate in several non-linear dynamic regimes,5 including low-frequency fluctuations and deterministic chaos, which are suitable for private communications taking advantage of both chaos masking and background stealth. However, the previous experiments focused on distributed feedback (DFB) quantum cascade lasers emitting at 5.7 µm, which is not an optimized wavelength for free-space applications. Indeed the atmosphere is characterized by two transparency windows between 3-4 µm and 8-12 µm, which are called bandpass L and bandpass N, respectively.6 Furthermore, the 5.7 µm lasers were studied at the chip level, which means that end users must own the dedicated mounts, connectors and mid-infrared optics in order to take advantage of these quantum cascade sources. This work extends our knowledge by exploring the non- linear dynamics of a packaged Fabry-Perot (FP) QCL emitting at 4 µm. The advantage of the FP configuration is an increased output-power compared to DFB sources, though the FP configuration is not well-known yet.7 Moreover, this laser comes in a handy environment with embedded focusing optics and high-heat load (HHL) packaging for plug-and-play operation. Consequently, the current findings pave the way for off-the-shelf private s at mid-infrared wavelength where high-power and compact turnkey systems are required.

Photonics integrated circuits on silicon are considered as a key technology for data centers and high-performance computers. Owing to the ultimate carrier confinement and reduced sensitivity to crystalline defects, semiconductor quantum dot lasers directly grown on silicon exhibit remarkable properties such as low threshold current, high temperature stability and robust tolerance to external reflections. This latter property is particularly important for achieving large-scale integrated circuits whereby unintentional back-reflections produced by the various passive/active optoelectronic components can hinder the stability of the lasers. In this context, it is known that quantum dot lasers are more resistant to optical feedback than quantum well ones thanks to the low linewidth enhancement factor, the large damping, and the possible absence of upper lasing states. In this work, we theoretically investigate the reflection sensitivity of quantum dot lasers directly grown on silicon by studying the peculiar role of the epitaxial defects, which induce nonradiative recombination through the Shockley-Read-Hall process. By using the Lang and Kobayashi model, we analyze the nonlinear properties of such quantum dot lasers through the bifurcation diagrams and with respect to the nonradiative lifetime. In particular, we show that the increase of the Shockley-Read-Hall recombination shrinks the chaotic region and shifts the first Hopf bifurcation to higher feedback values. We believe that these results can be useful for designing novel feedback resistant lasers for future photonics integrated circuits operating without optical isolator.

Quantum dot lasers directly grown on silicon are excellent candidates to achieve energy and cost-efficient optical transceivers thanks to their outstanding properties such as high temperature stability, low threshold lasing operation, and high feedback tolerance. In order to reach even better performance, p-type doping is used to eliminate gain saturation, gain broadening due to hole thermalization and to further reduce the linewidth enhancement factor. Optical transceivers with low relative intensity noise are also highly desired to carry broadband data with low bit-error rate. Indeed, the intensity noise stemming from intrinsic optical phase and frequency fluctuations caused by spontaneous emission and carrier noise degrades the signal-to-noise ratio and the bit-error rate hence setting a limit of a highspeed communication system. This paper constitutes a comprehensive study of the intensity noise properties of epitaxial quantum dot lasers on silicon. Results show minimal values between - 140 dB/Hz and - 150 dB/Hz for doping level between 0 and 20 holes/dot in the active region. In particular, the intensity noise is insensitive to temperature for p-doped QD laser. Modulation properties such as damping, carrier lifetime, and K-factor are also extracted from the noise characteristics and analyzed with respect to the doping level. We also provide numerical insights based on an excitonic model illustrating the effects of the Shockley-Read-Hall recombination on the intensity noise features. These new findings are meaningful for designing high speed and low noise quantum dot devices to be integrated in future photonic integrated circuits.

The sensitivity of a hybrid distributed feedback semiconductor (DFB) laser heterogeneously integrated onto silicon (Si) is extensively characterized in the presence of external optical feedback at different bias and temperature conditions. The unique modal engineering approach of the device allows the light generated in the III-V material to be stored in the low-loss Si region to significantly enhance the quality (Q) factor of the cavity resonator. This design leads to an increased temperature tolerance of the laser without impacting the transmission efficiency even under the most severe feedback conditions. At a temperature of T = 35◦C, the laser continuous to unveil optimal performance and exhibits feedback insensitivity when externally modulated at 10 Gbps transmission over a 10 km fiber coil. The study presented here demonstrates the ability of a high-Q laser to achieve floor-free transmission at different operating conditions with a power penalty degradation no greater than 1.5 dB. The prolonged transition to the coherence collapse regime at a much higher reflection level evidenced by this device when compared to its III-V counterparts in addition to its ability to withstand perturbations associated with temperature variations and unintentional back-reflections delivers a step forward towards isolator-free applications. This work suggest that this type of semiconductor lasers can serve as a promising solution for the development of compact and reliable photonic integrated circuits (PICs).

This work reports on an investigation of the dynamics of $1.3\phantom{\rule{4pt}{0ex}}\ensuremath{\mu}\text{m}$ epitaxial quantum dot (QD) lasers on silicon subject to delayed optical feedback. Operating the device under different feedback conditions, we experimentally identify various dynamical states of periodic oscillations. In the long-cavity feedback regime, the device remains chaos-free up to $\ensuremath{\approx}70% (\ensuremath{-}1.55\phantom{\rule{0.16em}{0ex}}\mathrm{dB})$ feedback strength. This remarkable result is in agreement with prior studies and is attributed to the particular design and properties of the QD-based active region. Shortening the external cavity length to the short-cavity regime being on the scale of photonics integrated circuits (PICs), the onset of periodic oscillations only takes place under extremely high feedback strength, which is much higher than those in PICs. The devices studied exhibit strong resistance to chip-scale back reflections in absence of any unstable oscillation. Our results also demonstrate that p doping is an efficient technique to further improve the feedback tolerance. These results point out the potential of QD lasers as an on-chip light source not requiring an optical isolator and gives insights for developing ultrastable silicon transmitters for PIC applications.