839 results on '"Foxon, C.T."'
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2. Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN
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3. Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth
4. Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source
5. Exploration of the growth parameter space for MBE-grown GaN1−xSbx highly mismatched alloys
6. Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy
7. Molecular beam epitaxy of free-standing wurtzite AlxGa1−xN layers
8. Tellurium n-type doping of highly mismatched amorphous GaN1−xAsx alloys in plasma-assisted molecular beam epitaxy
9. Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy
10. Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy
11. Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates
12. The growth of In0.5Ga0.5N and InN layers on (1 1 1)Si using nanorod intermediate arrays
13. GaN1−xSbx highly mismatched alloys grown by low temperature molecular beam epitaxy under Ga-rich conditions
14. Plasma-assisted molecular beam epitaxy process combined with a liquid phase electroepitaxy, a novel method for the growth of GaN layers
15. Extreme voltage recovery in GaAs:Ti intermediate band solar cells
16. Plasma-assisted electroepitaxy of GaN layers from the liquid Ga melt
17. Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN
18. Zinc-blende and wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy
19. Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN
20. Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices
21. Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals
22. Wurtzite Al xGa 1− xN bulk crystals grown by molecular beam epitaxy
23. Plasma-assisted electroepitaxy as a method for the growth of GaN layers
24. Domain wall resistance in perpendicular (Ga,Mn)As: Dependence on pinning
25. Temperature effects during the growth of In xGa 1− xN films through the whole compositional range by plasma-assisted molecular beam epitaxy
26. A theoretical model for the MBE growth of AlGaAsN using ammonia as the N source
27. Potential of Mn doped In 1−xGa xN for implementing intermediate band solar cells
28. Magneto-optical and micromagnetic simulation study of the current-driven domain wall motion in ferromagnetic (Ga,Mn)As
29. The origin and control of the sources of AMR in (Ga,Mn)As devices
30. A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy
31. Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content
32. Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy
33. Microstructure of GaN1−x Bi x
34. Free-standing zinc-blende (cubic) GaN layers and substrates
35. Growth of epitaxial thin films of scandium nitride on 100-oriented silicon
36. Coercivity enlargement in (Ga,Mn)As thin films with small amount of MnAs nanoclusters
37. Ordinary and extraordinary Coulomb blockade magnetoresistance in a (Ga, Mn)As single electron transistor
38. MBE growth of GaN using 15N isotope for nuclear magnetic resonance applications
39. Use of band-gap thermometry to investigate the growth of GaN on sapphire and GaAs
40. Evaluation of sapphire substrate heating behaviour using GaN band-gap thermometry
41. Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping
42. Raman spectroscopy of optical phonons as a probe of GaN epitaxial layer structural quality
43. Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
44. Reflectivity investigations as a method for characterizing group III nitride films
45. Photoelectron spectroscopy study of Ga 1− xMn xAs(0 0 1) surface oxide and low temperature cleaning
46. Structural characterisation of zinc-blende Ga 1−xMn xN epilayers grown by MBE as a function of Ga flux
47. Molecular beam epitaxy of p-type cubic GaMnN layers
48. Study of electron dynamics in n-type GaN using the Osaka free electron laser
49. Reflectivity study of hexagonal GaN films grown on GaAs: surface roughness, interface layer, and refractive index
50. Determination of the local microstructure of epitaxial AIN by x-ray absorption
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