374 results on '"Fournel, F."'
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2. Modulation of post-fracture roughness with induced shear stress in the smart cut process.
3. Spatial arrangements and types of dislocations in interfacial networks obtained by Si(001) wafer bonding at low twist angle: A TEM characterization
4. Bevel contamination management in 3D integration by localized SiO2 deposition
5. Transfer of an ultrathin single-crystal silicon film from a silicon-on-insulator to a polymer
6. 3D sequential integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL featuring RO and HDR pixel
7. Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking
8. Double cantilever beam bonding energy measurement using confocal IR microscopy.
9. FIVHeMA: Intraventricular fibrinolysis versus external ventricular drainage alone in aneurysmal subarachnoid hemorrhage: A randomized controlled trial
10. On the nature of tunable hole g-factors in quantum dots
11. Observation of spin-selective tunneling in SiGe nanocrystals
12. Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon
13. Study of a silicon/glass bonded structure with a UV-curable adhesive for temporary bonding applications
14. Stability of twist interfacial dislocations in (001) silicon bonded films
15. Influence of water diffusion in deposited silicon oxides on direct bonding of hydrophilic surfaces
16. Polymer bonding temperature impact on bonded stack morphology and adherence energy
17. Gripwise® versus Jamar®: the challenge of devices assessing handgrip strength for sarcopenia diagnosis in older inpatients with cancer
18. Engineered SiC materials for power technologies
19. Smart Cut Technology: The Path for Advanced SOI Substrates
20. TEM measurement of the epitaxial stress of Si/SiGe lamellae prepared by FIB
21. Effect of Copper–Copper Direct Bonding on Voiding in Metal Thin Films
22. Mechanism involved in direct hydrophobic Si(100)-2×1:H bonding
23. Origin of the TTV of thin films obtained by temporary bonding ZoneBond® technology
24. Direct wafer bonding of amorphous or densified atomic layer deposited alumina thin films
25. Mechanical understanding of 100 mm InP and GaAs direct bonded heterostructure
26. Water management on semiconductor surfaces
27. Versatile, rapid and robust nano-positioning of single-photon emitters by AFM-nanoxerography
28. Impact of the temperature process on the morphology of 3D temporary bonded wafers: Quantification and reducing of the effect
29. Pre-bond megasonic cleaning with improved process control
30. Hydrophobic direct bonding of silicon reconstructed surfaces
31. Contributor contact details
32. Materials and manufacturing techniques for silicon-on-insulator (SOI) wafer technology
33. Opportunities and challenges brought by 3D-sequential integration
34. Impact of Amino-Alcohol Organic Molecule on Various Silicon Oxide Bondings
35. The atomic structure of an incommensurate (001)-(110) Si grain boundary resolved thanks to a probe Cs-corrector
36. Temporary polymer bonding for the manufacturing of thin wafers: An innovative low temperature process
37. AlGaInAs MQW Laser Regrowth on Heterogenerous InP- on-SOI : Performance for Different Silicon Cavity Designs
38. Laser Array Covering 155 nm Wide Spectral Band Achieved by Selective Area Growth on Silicon Wafer
39. Evaluation des taux de recapture et de retour de la truite de mer sur le bassin de la Bresle (Haute-Normandie/Picardie)
40. Preparation of a nanopatterned surface of bonded silicon wafers using electrochemical thinning and chemical etching: A scanning tunnel microscopy investigation
41. Nanometric thinning of bonded silicon wafers using sacrificial anodic oxidation and investigated by X-ray reflectivity
42. Ge quantum dots growth on nanopatterned Si(0 0 1) surface: Morphology and stress relaxation study
43. Performance and physics of sub-50 nm strained Si on Si 1− xGe x-on-insulator (SGOI) nMOSFETs
44. A reliable copper-free wafer level hybrid bonding technology for high-performance medical imaging sensors
45. Measuring the surface bonding energy: A comparison between the classical double-cantilever beam experiment and its nanoscale analog
46. Elaboration and characterization of a 200 mm stretchable and flexible ultra-thin semi-conductor film
47. Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO2/Si substrate
48. Fabry Perot Laser Arrays Covering C+L Band Obtained by Selective Area Growth on InP-SiO2/Si Substrate
49. Direct Wafer Bonding for Nanostructure Preparations
50. Ultra-thin strained SOI substrate analysis by pseudo-MOS measurements
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