Search

Your search keyword '"Fortune, T. R."' showing total 20 results
Start Over Author "Fortune, T. R."
20 results on '"Fortune, T. R."'

1. Monolithically fabricated tunable long-wave infrared detectors based on dynamic graphene metasurfaces

Author

Goldflam, M. D., primary, Ruiz, I., additional, Howell, S. W., additional, Tauke-Pedretti, A., additional, Anderson, E. M., additional, Wendt, J. R., additional, Finnegan, P., additional, Hawkins, S., additional, Coon, W., additional, Fortune, T. R., additional, Shaner, E. A., additional, Kadlec, C., additional, Olesberg, J. T., additional, Klem, J., additional, Webster, P. T., additional, Sinclair, M. B., additional, Kim, J. K., additional, Peters, D. W., additional, and Beechem, T. E., additional

Published
2020
Full Text
View/download PDF

3. Improved infrared detection using nanoantennas

Author

Peters, D. W., primary, Sinclair, M. B., additional, Goldflam, M. D., additional, Warne, L. K., additional, Campione, S., additional, Kim, J. K., additional, Davids, P., additional, Pedretti, A. Tauke-, additional, Wendt, J. R., additional, Klem, J. F., additional, Hawkins, S. D., additional, Parameswaran, S., additional, Coon, W. T., additional, Keeler, G. A., additional, and Fortune, T. R., additional

Published
2017
Full Text
View/download PDF

4. Next-generation infrared focal plane arrays for high-responsivity low-noise applications

Author

Goldflam, M. D., primary, Hawkins, S. D., additional, Parameswaran, S., additional, Tauke-Pedretti, A., additional, Warne, L. K., additional, Peters, D. W., additional, Campione, S., additional, Coon, W. T., additional, Keeler, G. A., additional, Shaner, E. A., additional, Wendt, J. R., additional, Kadlec, E. A., additional, Fortune, T. R., additional, Klem, J. F., additional, Davids, P. S., additional, and Kim, J. K., additional

Published
2017
Full Text
View/download PDF

7. Effects of electron doping level on minority carrier lifetimes in n-type mid-wave infrared InAs/InAs1−xSbx type-II superlattices

Author

Kadlec, E. A., primary, Olson, B. V., additional, Goldflam, M. D., additional, Kim, J. K., additional, Klem, J. F., additional, Hawkins, S. D., additional, Coon, W. T., additional, Cavaliere, M. A., additional, Tauke-Pedretti, A., additional, Fortune, T. R., additional, Harris, C. T., additional, and Shaner, E. A., additional

Published
2016
Full Text
View/download PDF

8. Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers

Author

Goldflam, M. D., primary, Kadlec, E. A., additional, Olson, B. V., additional, Klem, J. F., additional, Hawkins, S. D., additional, Parameswaran, S., additional, Coon, W. T., additional, Keeler, G. A., additional, Fortune, T. R., additional, Tauke-Pedretti, A., additional, Wendt, J. R., additional, Shaner, E. A., additional, Davids, P. S., additional, Kim, J. K., additional, and Peters, D. W., additional

Published
2016
Full Text
View/download PDF

13. Defect-related dark currents in III-V MWIR nBn detectors

Author

Savich, G. R., additional, Sidor, D. E., additional, Du, X., additional, Jain, M., additional, Morath, C. P., additional, Cowan, V. M., additional, Kim, J. K., additional, Klem, J. F., additional, Leonhardt, D., additional, Hawkins, S. D., additional, Fortune, T. R., additional, Tauke-Pedretti, A., additional, and Wicks, G. W., additional

Published
2014
Full Text
View/download PDF

15. Effects of electron doping level on minority carrier lifetimes in n-type mid-wave infrared InAs/InAs1-xSbx type-II superlattices.

Author

Kadlec, E. A., Olson, B. V., Goldflam, M. D., Kim, J. K., Klem, J. F., Hawkins, S. D., Coon, W. T., Cavaliere, M. A., Tauke-Pedretti, A., Fortune, T. R., Harris, C. T., and Shaner, E. A.

Subjects
DOPING agents (Chemistry), INFRARED detectors, DIFFUSION currents, SUPERLATTICES, REFLECTANCE, ELECTRON-hole recombination, ELECTRON density
Abstract

The minority carrier lifetime (τMC) and equilibrium electron concentration (i.e., the doping level, n0) are both important values that directly determine diffusion current in infrared photodetectors utilizing n-type absorbing regions. Here, time-resolved microwave reflectance measurements are used to non-destructively measure both of these values in mid-wave infrared InAs/InAs1-xSbx type-II superlattices with varying n-type doping levels between 2 × 1014 cm-3 and 2 × 1016 cm-3. The measured data are analyzed using carrier recombination theory to determine the doping level ranges where Shockley-Read-Hall (SRH), radiative, and Auger recombination limit sMC. The optimal doping level, which minimizes dark current, is experimentally determined and corresponds to the electron density at which sMC switches from SRH limited to Auger limited behavior. A comparison of two InAs/InAs1-xSbx photodetectors of different equilibrium electron densities demonstrates a decrease in dark current for a doping level near the optimal n0τMC product. [ABSTRACT FROM AUTHOR]

Published
2016
Full Text
View/download PDF

16. Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs1-xSbx type-II superlattices.

Author

Olson, B. V., Kadlec, E. A., Kim, J. K., Klem, J. F., Hawkins, S. D., Tauke-Pedretti, A., Coon, W. T., Fortune, T. R., and Shaner, E. A.

Subjects
SUPERLATTICES, ELECTRONS, TIME-resolved microwave conductivity, CARRIER density, PHOTODETECTORS
Abstract

Measurements of the equilibrium majority carrier electron concentration (n0) in narrow-bandgap n-type InAs/InAs1-xSbx type-II superlattices are made using contactless time-resolved microwave reflectance (TMR). By calibrating TMR decays to the number of optically injected electron-hole pairs, direct conversion to carrier lifetimes as a function of excited carrier density is made and allowing for accurate measurement of n0. The temperature dependence of both n0 and the intrinsic carrier density (ni) are measured using this method, where n0=1×1015cm-3 and ni=1.74×1011cm-3 at 100K. These results provide non-destructive insight into critical parameters that directly determine infrared photodetector dark diffusion current. [ABSTRACT FROM AUTHOR]

Published
2016
Full Text
View/download PDF

19. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors.

Author

Olson, B. V., Kim, J. K., Kadlec, E. A., Klem, J. F., Hawkins, S. D., Leonhardt, D., Coon, W. T., Fortune, T. R., Cavaliere, M. A., Tauke-Pedretti, A., and Shaner, E. A.

Subjects
INDIUM alloys, DARK currents (Electric), PHOTODETECTORS, ELECTRON-hole recombination, MICROWAVES
Abstract

Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F1F2|= 0:292. The measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. Excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusion currents in nBn photodetectors. [ABSTRACT FROM AUTHOR]

Published
2015
Full Text
View/download PDF

20. Defect-related dark currents in III-V MWIR nBn detectors

Author

Andresen, Bjørn F., Fulop, Gabor F., Hanson, Charles M., Norton, Paul R., Savich, G. R., Sidor, D. E., Du, X., Jain, M., Morath, C. P., Cowan, V. M., Kim, J. K., Klem, J. F., Leonhardt, D., Hawkins, S. D., Fortune, T. R., Tauke-Pedretti, A., and Wicks, G. W.

Published
2014
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results