1. Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters
- Author
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Finn, Robert, O'Donovan, Michael, Farrell, Patricio, Moatti, Julien, Streckenbach, Timo, Koprucki, Thomas, Schulz, Stefan, Tyndall National Institute [Cork], Weierstraß-Institut für Angewandte Analysis und Stochastik = Weierstrass Institute for Applied Analysis and Stochastics [Berlin] (WIAS), Forschungsverbund Berlin e.V. (FVB) (FVB), Reliable numerical approximations of dissipative systems (RAPSODI ), Laboratoire Paul Painlevé (LPP), Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Inria Lille - Nord Europe, Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria), and ANR-11-LABX-0007,CEMPI,Centre Européen pour les Mathématiques, la Physique et leurs Interactions(2011)
- Subjects
[PHYS]Physics [physics] - Abstract
Aluminium gallium nitride ((Al,Ga)N) has gained significant attention in recent years due to its potential for highly efficient light emitters operating in the deep ultra-violet (UV) range (< 280 nm). However, given that current devices exhibit extremely low efficiencies, understanding the fundamental properties of (Al,Ga)N-based systems is of key importance. Here, using a multi-scale simulation framework, we study the impact of alloy disorder on carrier transport, radiative and non-radiative recombination processes in a c-plane Al 0.7 Ga 0.3 N/Al 0.8 Ga 0.2 N quantum well embedded in a p-i-n junction. Our calculations reveal that alloy fluctuations can open "percolative" pathways that promote transport for the electrons and holes into the quantum well region. Such an effect is neglected in conventional, and widely used transport simulations. Moreover, we find also that the resulting increased carrier density and alloy induced carrier localization effects significantly increase non-radiative Auger-Meitner recombination in comparison to the radiative process. Thus, to avoid such non-radiative process and potentially related material degradation, a careful design (wider well, multi quantum wells) of the active region is required to improve the efficiency of deep UV light emitters.
- Published
- 2023