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A three-step dehydrogenation and crystallization process yields polycrystalline silicon grains for thin films transistors by removing hydrogen, crystallizing silicon and preserving nonirradiated regions of a-Si:H. Grain size varies directly with laser energy density till a peak of 1 micrometer, but varies inversely with further increases in laser energy density. Transistor field effect motion also varies with laser energy density till a peak value is reached after which leakage occurs through gate insulators. High quality amorphous and polycrystalline transistors are formed on the same glass substrate using a dual dielectric gate insulator.

The design of an imaging array of high-temperature silicon membrane bolometers for far infrared imaging is discussed. The array uses micro-machined bolometers fabricated by optical litography on silicon substrates. It is also equipped with multiplexed readout amplifiers capable of signal integration on the bolometer chip. Experimental tests show that the array can perform accurate infrared imaging measurements over wavelengths of 30 to 100 micrometers.

The a-axis growth of YBa2Cu3O7 thin films on LaAlO3 induced by monolayer buffers ofPrO2 was investigated. The results showed that the addition of an PrO2 intermediate buffer resulted in the growth of almost exclusive epitaxial a-axisoriented YBa2Cu3O7 films. When the PrO2 buffer layer was not present, c-axis oriented films were produced. The a-axis oriented films had lower critical temperatures than the c-axis oriented films.

The use of high-T sub c superconducting bolometers in infrared imaging arrays is dependent on excess voltage noise in the thermometer. This bolometer sensitivity dependence is a function of the detector area and wavelength to be detected. The performance ofdifferent bolometer architectures is tested using YBa2Cu3O(7-gamma) on silicon,Si3N4 and sapphire substrates.

Superconducting Bi-Ca-Sr-Cu-O Fibers Grown by the Laser-Heated Pedestal Growth Method THE LASER-HEATED PEDESTAL GROWTH (LHPG) method has been shown to be a powerful method for rapidly growing small-diameter single crystals, [...]

Demonstrates the effect of a short-pulse crystallization of amorphous silicon on quartz that causes surface roughening via the freezing of capillary waves excited in the silicon melt. Velocity and viscous damping of the capillary waves; Variation of volume change of the silicon during solidification; Observation of the film thickness variation.

Describes the epitaxy of YBa[sub 2]Cu[sub 3]O[sub 7-delta] on gallium arsenide (GaAs) substrate using epitaxial magnesium oxide (MgO) buffer layers. In situ deposition of MgO thin film by pulsed laser deposition; Characterization of epitaxy by four-circle x-ray diffraction technique; Details on in-plane crystallography of MgO on GaAs.

Studies the high critical current densities in epitaxial YBa[sub 2]Cu[sub 3]O[sub 7-delta] thin films on silicon-on-sapphire. Measurement of microwave surface resistance; Quality of YBCO growth on bulk silicon; Transport critical current density.

Studies the growth of magnesium oxide thin films on silicon by pulsed laser deposition. Lattice mismatch; Sensitivity of epitaxial quality and deposition rate to temperature and oxygen pressure; X-ray diffraction figures of merit for magnesium oxide reflection; Suitability of epitaxial magnesium oxide on silicon as a host lattice for YBCO/BaTiO[sub 3] bilayers.

Examines the crystallization of Pb(Zr[sub 0.52]Ti[sub 0.48])O[sub 3] (PZT) thin films on SrTiO[sub 3] (100) and magnesium oxide (MgO) (100) substrates. Observation of solid phase epitaxial growth of PZT on SrTiO[sub 3]; Improvement of PZT films by MgO substrate; Consideration of nonhydrolyzed metal alkoxide based solution process as an approach.