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Examines the formation of argon-induced multistep on Silicon(001). Criterion for the orientational and structural film properties; Effects of residual substrate on the formation of particular domain orientations of the overlayer; Effect of the adsorption of submonolayer quantities of Argon on step structure.

Investigates the epitaxial buckminsterfullerene (C[sub 60]) films grown by molecular beam deposition in cadmium fluoride surfaces. Formation of stacked hexagonal layer overgrowth in C[sub 60]; Observation of structural phase transitions in fullerenes; Influence of surface steps on epitaxial growth.

We have studied the Cr(110) surface with low-temperature scanning tunneling microscopy at 6 to 145 K. For tunneling voltages below +/-150 mV we observe a surface charge-density wave (CDW) with a wavelength of 42 A and wave fronts aligned with the [001] in-plane direction. The observed wave pattern is identified as the surface projection of the bulk CDW's arising from the spin-density wave ground state of Cr with the Q vector parallel to [100] and [010], respectively. The bulk CDW with Q parallel to the [001] in-plane direction appears, however, to be strongly suppressed at the Cr(110) surface.

We report experimental results on an insulator-on-metal system which is inherently unstable against lateral pattern formation on the nanometer scale. NaCl deposition on Cu(211) at substrate temperatures >300 K leads to faceting into (311) and (111) facets and selective NaCl growth on (311) facets only, thereby creating alternating stripes of bare Cu and NaCl-covered areas. The mesoscopic restructuring process is brought about by (1) the tendency to form (100)-terminated NaCl layers, (2) epitaxial matching between NaCl(100) and Cu(311), and (3) sufficient mobility of the Cu substrate surface.