1. Average Temperature Determination of AlGaN/GaN HEMT Utilizing Pinch-Off Voltage Biasing
- Author
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Florovic, M., Kovac, J., Chvala, A., Kovac, J., Jacquet, J. -C., and Delage, S. L.
- Abstract
In this article, pinch-off voltage biasing was utilized for the first time to determine the average channel temperature of the AlGaN/GaN HEMT, which made it possible to exclude the device’s electrical parameters dependence in the linear operating mode. The theoretical part is focused on the thermal model with temperature-dependent thermal resistance utilization for active area average temperature determination of the HEMT under quasi-static operation. The experimental part deals with drain-to-source current comparison utilizing quasi-static and pinch-off voltage-biased short-pulse output
${I}$ ${V}$ - Published
- 2023
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