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In this paper we study the (co)homology of Tanabe algebras, which are a family of subalgebras of the partition algebras exhibiting a Schur-Weyl duality with certain complex reflection groups. The homology of the partition algebras has been shown to be related to the homology of the symmetric groups by Boyd-Hepworth-Patzt and the results they obtain depend on a parameter. In all known results, the homology of a diagram algebra is dependent on one of two things: the invertibility of a parameter in the ground ring or the parity of the positive integer indexing the number of pairs of vertices. We show that the (co)homology of Tanabe algebras is isomorphic to the (co)homology of the symmetric groups and that this is independent of both the parameter and the parity of the index. To the best of our knowledge, this is the first example of a result of this sort. Along the way we will also study the (co)homology of the uniform block permutation algebra and the totally propagating partition algebra as well collecting cohomological analogues of known results for the homology of partition algebras and Jones annular algebras., Comment: 14 pages

In semiconductor-based quantum technologies, the capability to shuttle charges between components is profoundly enabling. We numerically simulated various "conveyor-belt" shuttling scenarios for simple Si/SiO2 devices, explicitly modelling the electron's wave function using grid-based split-operator methods and a time-dependent 2D potential (obtained from a Poisson solver). This allowed us to fully characterise the electron loss probability and excitation fraction. Remarkably, with as few as three independent electrodes the process can remain near-perfectly adiabatic even in the presence of pulse imperfection, nearby charge defects, and Johnson-Nyquist noise. Only a substantial density of charge defects, or defects at 'adversarial' locations, can catastrophically disrupt the charge shuttling. While we do not explicitly model the spin or valley degrees of freedom, our results from this charge propagation study support the conclusion that conveyor-belt shuttling is an excellent candidate for providing connectivity in semiconductor quantum devices., Comment: 32 pages, 34 figures

Two-dimensional dopant layers ($\delta$-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs have traditionally been extracted from quantum magnetotransport. In principle, the parameters are immediately readable from the one-electron spectral function that can be measured by angle-resolved photoemission spectroscopy (ARPES). Here, buried 2DEL $\delta$-layers in silicon are measured with soft X-ray (SX) ARPES to obtain detailed information about their filled conduction bands and extract device-relevant properties. This study takes advantage of the larger probing depth and photon energy range of SX-ARPES relative to vacuum ultraviolet (VUV) ARPES to accurately measure the $\delta$-layer electronic confinement. The measurements are made on ambient-exposed samples and yield extremely thin ($\approx 1$ $nm$) and dense ($\approx$ $10^{14}$ $cm^2$) 2DELs. Critically, this method is used to show that $\delta$-layers of arsenic exhibit better electronic confinement than $\delta$-layers of phosphorus fabricated under identical conditions., Comment: Published in Advanced Science as a Research Article

Extremely high beam-to-radiation energy conversion efficiencies can be obtained in a THz FEL using a strongly tapered helical undulator at the zero-slippage resonant condition, where a circular waveguide is used to match the radiation group velocity to the electron beam longitudinal velocity. In this paper we report on the first electro-optic sampling (EOS) based measurements of the broadband THz FEL radiation pulses emitted in this regime. The THz field waveforms are reconstructed in the spatial and temporal domains using multi-shot and single-shot EOS schemes respectively. The measurements are performed varying the input electron beam energy in the undulator providing insights on the complex dynamics in a waveguide FEL.