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The electrically readable complex dynamics of robust and scalable magnetic tunnel junctions (MTJs) offer promising opportunities for advancing neuromorphic computing. In this work, we present an MTJ design with a free layer and two polarizers capable of computing the sigmoidal activation function and its gradient at the device level. This design enables both feedforward and backpropagation computations within a single device, extending neuromorphic computing frameworks previously explored in the literature by introducing the ability to perform backpropagation directly in hardware. Our algorithm implementation reveals two key findings: (i) the small discrepancies between the MTJ-generated curves and the exact software-generated curves have a negligible impact on the performance of the backpropagation algorithm, (ii) the device implementation is highly robust to inter-device variation and noise, and (iii) the proposed method effectively supports transfer learning and knowledge distillation. To demonstrate this, we evaluated the performance of an edge computing network using weights from a software-trained model implemented with our MTJ design. The results show a minimal loss of accuracy of only 0.1% for the Fashion MNIST dataset and 2% for the CIFAR-100 dataset compared to the original software implementation. These results highlight the potential of our MTJ design for compact, hardware-based neural networks in edge computing applications, particularly for transfer learning., Comment: 18 pages, 5 figures

Radiofrequency harvesting using ambient wireless energy could be used to reduce the carbon footprint of electronic devices. However, ambient radiofrequency energy is weak (less than -20 dBm), and thermodynamic limits and high-frequency parasitic impedance restrict the performance of state-of-the-art radiofrequency rectifiers. Nanoscale spin rectifiers based on magnetic tunnel junctions have recently demonstrated high sensitivity, but suffer from a low a.c.-to-d.c. conversion efficiency (less than 1%). Here, we report a sensitive spin rectifier rectenna that can harvest ambient radiofrequency signals between -62 and -20 dBm. We also develop an on-chip co-planar waveguide-based spin rectifier array with a large zero-bias sensitivity (around 34,500 mV/mW) and high efficiency (7.81%). Self-parametric excitation driven by voltage-controlled magnetic anisotropy is a key mechanism that contributes to the performance of the spin-rectifier array. We show that these spin rectifiers can wirelessly power a sensor at a radiofrequency power of -27 dBm.

Current-driven magnetic skyrmions show promise as carriers of information bits in racetrack magnetic memory applications. Specifically, the utilization of skyrmions in synthetic antiferromagnetic (SAF) systems is highly attractive due to the potential to suppress the Skyrmion Hall effect, which causes a transverse displacement of driven skyrmions relative to the drift direction. In this study, we demonstrate, through analytical calculations and micromagnetic simulations, that in the case of a nanoring geometry, current-driven skyrmions achieve a stable circular motion with a constant frequency, which is a prerequisite for a skyrmion-based clock device. Notably, the operational frequency in a SAF nanoring surpasses that in a bilayer ferromagnetic-heavy metal nanoring and lies in the GHz regime for current densities of 20 MA/cm^2. We also find that the performance of skyrmions in SAF nanorings is comparable to that of radial Neel domain walls for low current densities (approximately 15 MA/cm^2) and low skyrmion densities (Nsk~6). Additionally, we introduce a novel skyrmionic three-phase AC alternator based on a SAF nanoring, which operates at frequencies in the GHz regime. Our findings underscore the potential of SAF nanorings as constituent materials in clock devices with tunable frequencies operating in the GHz regime, Comment: 20 pages, 7 Figures

The growing market and massive use of Internet of Things nodes is placing unprecedented demands of energy efficient hardware for edge computing and microwave devices. In particular, magnetic tunnel junctions (MTJs), as main building blocks of spintronic microwave technology, can offer a path for the development of compact and high-performance microwave detectors. On the other hand, the fascinating field of skyrmionics is bridging together concepts from topology and spintronics. Here, we show the proof of concept of a topological spin-torque diode realized with an MTJ on top of a skyrmionic material at room temperature and for a wide region of applied fields, including the zero-field case. Our spin torque diode electrical measurements show the electrical excitation of a skyrmion resonant mode with frequencies near 4 GHz and a selectivity one order of magnitude smaller than the uniform modes excited in the same device. Micromagnetic simulations identify these dynamics with the excitation of the breathing mode and point out the role of thickness dependent magnetic parameters (magnetic anisotropy field and Dzyaloshinkii Moriya interaction) in both stabilizing and exciting the magnetic skyrmions. This work marks a milestone for the development of topological spin-torque diodes.

An emerging paradigm in modern electronics is that of CMOS + $\sf X$ requiring the integration of standard CMOS technology with novel materials and technologies denoted by $\sf X$. In this context, a crucial challenge is to develop accurate circuit models for $\sf X$ that are compatible with standard models for CMOS-based circuits and systems. In this perspective, we present physics-based, experimentally benchmarked modular circuit models that can be used to evaluate a class of CMOS + $\sf X$ systems, where $\sf X$ denotes magnetic and spintronic materials and phenomena. This class of materials is particularly challenging because they go beyond conventional charge-based phenomena and involve the spin degree of freedom which involves non-trivial quantum effects. Starting from density matrices $-$ the central quantity in quantum transport $-$ using well-defined approximations, it is possible to obtain spin-circuits that generalize ordinary circuit theory to 4-component currents and voltages (1 for charge and 3 for spin). With step-by-step examples that progressively become more complex, we illustrate how the spin-circuit approach can be used to start from the physics of magnetism and spintronics to enable accurate system-level evaluations. We believe the core approach can be extended to include other quantum degrees of freedom like valley and pseudospins starting from corresponding density matrices.

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures were not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here we show three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

The dynamical properties of skyrmions can be exploited to build devices with new functionalities. Here, we first investigate a skyrmion-based ring-shaped device by means of micromagnetic simulations and Thiele equation. We subsequently show three applications scenarios: (1) a clock with tunable frequency that is biased with an electrical current having a radial spatial distribution, (2) an alternator, where the skyrmion circular motion driven by an engineered anisotropy gradient is converted into an electrical signal, and (3) an energy harvester, where the skyrmion motion driven by a thermal gradient is converted into an electrical signal, thus providing a heat recovery operation. We also show how to precisely tune the frequency and amplitude of the output electrical signals by varying material parameters, geometrical parameters, number and velocity of skyrmions, and we further prove the correct device functionality under realistic conditions given by room temperature and internal material defects. Our results open a new route for the realization of energy efficient nanoscale clocks, generators, and energy harvesters.

Accelerometers have widespread applications and are an essential component in many areas such as automotive, consumer electronics and industrial applications. Most commercial accelerometers are based on micro-electromechanical system (MEMS) that are limited in downscaling and power consumption. Spintronics-based accelerometers have been proposed as alternatives, however, current proposals suffer from design limitations that result in reliability issues and high cost. Here we propose spintronic accelerometers with magnetic tunnel junctions (MTJs) as building block, which map accelerations into a measurable voltage across the MTJ terminals. The device exploits elastic and dipolar coupling as a sensing mechanism and the spintronic diode effect for the direct read out of the acceleration. The proposed technology represents a potentially competitive and scalable solution to current capacitive MEMS-based approaches that could lead to a step forward in many of the commercial applications., Comment: main document with 4 figures + supplemental information

Magnetic solitons are promising for applications due to their intrinsic properties such as small size, topological stability, ultralow power manipulation and potentially ultrafast operations. To date, research has focused on the manipulation of skyrmions, domain walls, and vortices by applied currents. The discovery of new methods to control magnetic parameters, such as the interfacial Dzyaloshinskii-Moriya interaction (DMI) by strain, geometry design, temperature gradients, and applied voltages promises new avenues for energetically efficient manipulation of magnetic structures. The latter has shown significant progress in 2d material-based technology. In this work, we present a comprehensive study using numerical and analytical methods of the stability and motion of different magnetic textures under the influence of DMI gradients. Our results show that under the influence of linear DMI gradients, N\'eel and Bloch-type skyrmions and radial vortex exhibit motion with finite skyrmion Hall angle, while the circular vortex undergoes expulsion dynamics. This work provides a deeper and crucial understanding of the stability and gradient-driven dynamics of magnetic solitons, and paves the way for the design of alternative low-power sources of magnetization manipulation in the emerging field of 2d materials., Comment: 19 pages, 5 figures

Spiking neural networks aim to emulate the brain's properties to achieve similar parallelism and high-processing power. A caveat of these neural networks is the high computational cost to emulate, while current proposals for analogue implementations are energy inefficient and not scalable. We propose a device based on a single magnetic tunnel junction to perform neuron firing for spiking neural networks without the need of any resetting procedure. We leverage two physics, magnetism and thermal effects, to obtain a bio-realistic spiking behavior analogous to the Huxley-Hodgkin model of the neuron. The device is also able to emulate the simpler Leaky-Integrate and Fire model. Numerical simulations using experimental-based parameters demonstrate firing frequency in the MHz to GHz range under constant input at room temperature. The compactness, scalability, low cost, CMOS-compatibility, and power efficiency of magnetic tunnel junctions advocate for their broad use in hardware implementations of spiking neural networks., Comment: 23 pages, 6 figures, 2 tables

The commercial and industrial demand for the solution of hard combinatorial optimization problems push forward the development of efficient solvers. One of them is the Ising machine which can solve combinatorial problems mapped to Ising Hamiltonians. In particular, spintronic hardware implementations of Ising machines can be very efficient in terms of area and performance, and are relatively low-cost considering the potential to create hybrid CMOS-spintronic technology. Here, we perform a comparison of coherent and probabilistic paradigms of Ising machines on several hard Max-Cut instances, analyzing their scalability and performance at software level. We show that probabilistic Ising machines outperform coherent Ising machines in terms of the number of iterations required to achieve the problem s solution. Nevertheless, high frequency spintronic oscillators with sub-nanosecond synchronization times could be very promising as ultrafast Ising machines. In addition, considering that a coherent Ising machine acts better for Max-Cut problems because of the absence of the linear term in the Ising Hamiltonian, we introduce a procedure to encode Max-3SAT to Max-Cut. We foresee potential synergic interplays between the two paradigms., Comment: 26 pages, 6 Figures, submitted for publication in Phys. Rev. Applied (it will be presented at intermag 2023 in Japan)

We have designed a passive spintronic diode based on a single skyrmion stabilized in a magnetic tunnel junction and studied its dynamics induced by voltage-controlled anisotropy (VCMA) and Dzyaloshinskii-Moriya interaction (VDMI). We have demonstrated that the sensitivity (rectified voltage over input microwave power) with realistic physical parameters and geometry can be larger than 10 kV/W which is one order of magnitude better than diodes employing a uniform ferromagnetic state. Our numerical and analytical results on the VCMA and VDMI-driven resonant excitation of skyrmions beyond the linear regime reveal a frequency dependence on the amplitude and no efficient parametric resonance. Skyrmions with a smaller radius produced higher sensitivities, demonstrating the efficient scalability of skyrmion-based spintronic diodes. These results pave the way for designing passive ultra-sensitive and energy efficient skyrmion-based microwave detectors., Comment: 11 pages, 3 figures

The transistor celebrated its 75${}^\text{th}$ birthday in 2022. The continued scaling of the transistor defined by Moore's Law continues, albeit at a slower pace. Meanwhile, computing demands and energy consumption required by modern artificial intelligence (AI) algorithms have skyrocketed. As an alternative to scaling transistors for general-purpose computing, the integration of transistors with unconventional technologies has emerged as a promising path for domain-specific computing. In this article, we provide a full-stack review of probabilistic computing with p-bits as a representative example of the energy-efficient and domain-specific computing movement. We argue that p-bits could be used to build energy-efficient probabilistic systems, tailored for probabilistic algorithms and applications. From hardware, architecture, and algorithmic perspectives, we outline the main applications of probabilistic computers ranging from probabilistic machine learning and AI to combinatorial optimization and quantum simulation. Combining emerging nanodevices with the existing CMOS ecosystem will lead to probabilistic computers with orders of magnitude improvements in energy efficiency and probabilistic sampling, potentially unlocking previously unexplored regimes for powerful probabilistic algorithms.

In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing with nanotechnologies to guide future research, and this collection aims to fill that need. The authors provide a comprehensive roadmap for neuromorphic computing using electron spins, memristive devices, two-dimensional nanomaterials, nanomagnets, and various dynamical systems. They also address other paradigms such as Ising machines, Bayesian inference engines, probabilistic computing with p-bits, processing in memory, quantum memories and algorithms, computing with skyrmions and spin waves, and brain-inspired computing for incremental learning and problem-solving in severely resource-constrained environments. These approaches have advantages over traditional Boolean computing based on von Neumann architecture. As the computational requirements for artificial intelligence grow 50 times faster than Moore's Law for electronics, more unconventional approaches to computing and signal processing will appear on the horizon, and this roadmap will help identify future needs and challenges. In a very fertile field, experts in the field aim to present some of the dominant and most promising technologies for unconventional computing that will be around for some time to come. Within a holistic approach, the goal is to provide pathways for solidifying the field and guiding future impactful discoveries., Comment: 80 pages accepted in Nano Futures

The understanding of antiferromagnetic domain walls, which are the interface between domains with different N\'eel order orientations, is a crucial aspect to enable the use of antiferromagnetic materials as active elements in future spintronic devices. In this work, we demonstrate that in antiferromagnetic NiO/Pt bilayers circular domain structures can be generated by switching driven by electrical current pulses. The generated domains are T-domains, separated from each other by a domain wall whose spins are pointing toward the average direction of the two T-domains rather than the common axis of the two planes. Interestingly, this direction is the same for the whole circular domain indicating the absence of strong Lifshitz invariants. The domain wall can be micromagnetically modeled by strain distributions in the NiO thin film induced by the MgO substrate, deviating from the bulk anisotropy. From our measurements we determine the domain wall width to have a full width at half maximum of $\Delta = 98 \pm 10$ nm, demonstrating strong confinement., Comment: 9 pages, 5 figures

The nearing end of Moore's Law has been driving the development of domain-specific hardware tailored to solve a special set of problems. Along these lines, probabilistic computing with inherently stochastic building blocks (p-bits) have shown significant promise, particularly in the context of hard optimization and statistical sampling problems. p-bits have been proposed and demonstrated in different hardware substrates ranging from small-scale stochastic magnetic tunnel junctions (sMTJs) in asynchronous architectures to large-scale CMOS in synchronous architectures. Here, we design and implement a truly asynchronous and medium-scale p-computer (with $\approx$ 800 p-bits) that closely emulates the asynchronous dynamics of sMTJs in Field Programmable Gate Arrays (FPGAs). Using hard instances of the planted Ising glass problem on the Chimera lattice, we evaluate the performance of the asynchronous architecture against an ideal, synchronous design that performs parallelized (chromatic) exact Gibbs sampling. We find that despite the lack of any careful synchronization, the asynchronous design achieves parallelism with comparable algorithmic scaling in the ideal, carefully tuned and parallelized synchronous design. Our results highlight the promise of massively scaled p-computers with millions of free-running p-bits made out of nanoscale building blocks such as stochastic magnetic tunnel junctions., Comment: To appear in the 22nd IEEE International Conference on Nanotechnology (IEEE-NANO 2022)

The static and dynamic properties of skyrmions have recently received increased attention due to the potential application of skyrmions as information carriers and for unconventional computing. While the current-driven dynamics has been explored deeply, both theoretically and experimentally, the theory of temperature gradient-induced dynamics - Skyrmion-Caloritronics - is still at its early stages of development. Here, we move the topic forward by identifying the role of entropic torques due to the temperature dependence of magnetic parameters. Our results show that, skyrmions move towards higher temperatures in single-layer ferromagnets with interfacial Dzyaloshinski-Moriya interactions, whereas, in multilayers, they move to lower temperatures. We analytically and numerically demonstrate that the opposite behaviors are due to different scaling relations of the material parameters as well as a non-negligible magnetostatic field gradient in multilayers. We also find a spatially dependent skyrmion Hall angle in multilayers hosting hybrid skyrmions due to variations of the thickness dependent chirality as the skyrmion moves along the temperature gradient.

The development of skyrmionic devices requires a suitable tuning of material parameters in order to stabilize skyrmions and control their density. It has been demonstrated recently that different skyrmion types can be simultaneously stabilized at room temperature in heterostructures involving ferromagnets, ferrimagnets and heavy metals, offering a new platform of coding binary information in the type of skyrmion instead of the presence/absence of skyrmions. Here, we tune the energy landscape of the two skyrmion types in such heterostructures by engineering the geometrical and material parameters of the individual layers. We find that a fine adjustment of the ferromagnetic layer thickness and thus its magnetic anisotropy, allows the trilayer system to support either one of the skyrmion types or the coexistence of both and with varying densities.

Voltage controlled magnetic anisotropy (VCMA) is a low-energy alternative to manipulate the ferromagnetic state, which has been recently considered also in antiferromagnets (AFMs). Here, we theoretically demonstrate that VCMA can be used to excite linear and parametric resonant modes in easy-axis AFMs with perpendicular anisotropy, thus opening the way for an efficient electrical control of the Neel vector, and for detection of high-frequency dynamics. Our work leads to two key results: (i) VCMA parametric pumping experiences the so-called exchange enhancement of the coupling efficiency and, thus, is 1-2 orders of magnitude more efficient than microwave magnetic fields or spin-orbit-torques, and (ii) it also allows for zero-field parametric resonance, which cannot be achieved by other parametric pumping mechanisms in AFMs with out-of-plane easy axis. Therefore, we demonstrate that the VCMA parametric pumping is the most promising method for coherent excitation and manipulation of AFM order in perpendicular easy-axis AFMs.

The search of hardware-compatible strategies for solving NP-hard combinatorial optimization problems (COPs) is an important challenge of today s computing research because of their wide range of applications in real world optimization problems. Here, we introduce an unconventional scalable approach to face maximum satisfiability problems (Max-SAT) which combines probabilistic computing with p-bits, parallel tempering, and the concept of invertible logic gates. We theoretically show the spintronic implementation of this approach based on a coupled set of Landau-Lifshitz-Gilbert equations, showing a potential path for energy efficient and very fast (p-bits exhibiting ns time scale switching) architecture for the solution of COPs. The algorithm is benchmarked with hard Max-SAT instances from the 2016 Max-SAT competition (e.g., HG-4SAT-V150-C1350-1.cnf which can be described with 2851 p-bits), including weighted Max-SAT and Max-Cut problems., Comment: 7 Figures, 20 pages

Spintronic diodes (STDs) are emerging as a technology for the realization of high-performance microwave detectors. The key advantages of such devices are their high sensitivity, capability to work at low input power, and compactness. In this work, we show a possible use of STDs for neuromorphic computing expanding the realm of their functionalities to implement analog multiplication, which is a key operation in convolutional neural networks (CNN). In particular, we introduce the concept of degree of rectification (DOR) in injection-locked STDs. Micromagnetic simulations are used to design and identify the working range of the STDs for the implementation of the DOR. Previous experimental data confirm the applicability of the proposed solution, which is tested in image processing and in a CNN that recognizes handwritten digits., Comment: 21 pages, 6 figures, supplemental material includes 4 figures

Inspired by the developments in quantum computing, building domain-specific classical hardware to solve computationally hard problems has received increasing attention. Here, by introducing systematic sparsification techniques, we demonstrate a massively parallel architecture: the sparse Ising Machine (sIM). Exploiting sparsity, sIM achieves ideal parallelism: its key figure of merit - flips per second - scales linearly with the number of probabilistic bits (p-bit) in the system. This makes sIM up to 6 orders of magnitude faster than a CPU implementing standard Gibbs sampling. Compared to optimized implementations in TPUs and GPUs, sIM delivers 5-18x speedup in sampling. In benchmark problems such as integer factorization, sIM can reliably factor semiprimes up to 32-bits, far larger than previous attempts from D-Wave and other probabilistic solvers. Strikingly, sIM beats competition-winning SAT solvers (by 4-700x in runtime to reach 95% accuracy) in solving 3SAT problems. Even when sampling is made inexact using faster clocks, sIM can find the correct ground state with further speedup. The problem encoding and sparsification techniques we introduce can be applied to other Ising Machines (classical and quantum) and the architecture we present can be used for scaling the demonstrated 5,000-10,000 p-bits to 1,000,000 or more through analog CMOS or nanodevices.

Spintronic technology is emerging as a direction for the hardware implementation of neurons and synapses of neuromorphic architectures. In particular, a single spintronic device can be used to implement the nonlinear activation function of neurons. Here, we propose how to implement spintronic neurons with a sigmoidal and ReLU-like activation functions. We then perform a numerical experiment showing the robustness of neural networks made by spintronic neurons all having different activation functions to emulate device-to-device variations in a possible hardware implementation of the network. Therefore, we consider a vanilla neural network implemented to recognize the categories of the Mixed National Institute of Standards and Technology database, and we show an average accuracy of 98.87 % in the test dataset which is very close to the 98.89% as obtained for the ideal case (all neurons have the same sigmoid activation function). Similar results are also obtained with neurons having a ReLU-like activation function.

There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn$_3$/Pt devices. A six-terminal double-cross device is constructed, with an IrMn$_3$ pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn$_3$ after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn$_3$ pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.

We report a study of the magnetization reversals and skyrmion configurations in two systems - Pt/Co/MgO and Ir/Fe/Co/Pt multilayers, where magnetic skyrmions are stabilized by a combination of dipolar and Dzyaloshinskii-Moriya interactions (DMI). First Order Reversal Curve (FORC) diagrams of low-DMI Pt/Co/MgO and high-DMI Ir/Fe/Co/Pt exhibit stark differences, which are identified by micromagnetic simulations to be indicative of hybrid and pure N\'eel skyrmions, respectively. Tracking the evolution of FORC features in multilayers with dipolar interactions and DMI, we find that the negative FORC valley, typically accompanying the positive FORC peak near saturation, disappears under both reduced dipolar interactions and enhanced DMI. As these conditions favor the formation of pure Neel skyrmions, we propose that the resultant FORC feature - a single positive FORC peak near saturation - can act as a fingerprint for pure N\'eel skyrmions in multilayers. Our study thus expands on the utility of FORC analysis as a tool for characterizing spin topology in multilayer thin films., Comment: 11 pages, 4 figures

Spintronic diodes are emerging as disruptive candidates for impacting several technological applications ranging from the Internet of Things to Artificial Intelligence. In this letter, an overview of the recent achievements on spintronic diodes is briefly presented, underling the major breakthroughs that have led these devices to have the largest sensitivity measured up to date for a diode. For each class of spintronic diodes (passive, active, resonant, non-resonant), we indicate the remaining developments to improve the performances as well as the future directions. We also dedicate the last part of this perspective to new ideas for developing spintronic diodes in multiphysics systems by combining 2-dimensional materials and antiferromagnets.

Magnetic skyrmions are emerging as key elements of unconventional operations having unique properties such as small size and low current manipulation. In particular, it is possible to design skyrmion-based neurons and synapses for neuromorphic computing in devices where skyrmions move along the current direction (zero skyrmion Hall angle). Here, we show that, for a given graph, skyrmions can be used in optimization problems facing the calculation of the shortest path. Our tests show a solution with the same path length as computed with Algorithm. In addition, we also discuss how skyrmions act as positive feedback on this type of problem giving rise to a self-reinforcement of the path which is a possible solution.

Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we reported bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii-Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design., Comment: 27 pages, 5 figures

Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the N\'eel vector direction changes. We demonstrate electrical switching between different T-domains by current pulses, finding that the N\'eel vector orientation in these domains is along $[\pm5\ \pm5\ 19]$, different compared to the bulk $<11\bar{2}>$ directions. The final state of the N\'eel vector $\textbf{n}$ switching after current pulses $\textbf{j}$ along the $[1\ \pm1\ 0]$ directions is $\textbf{n}\parallel \textbf{j}$. By comparing the observed N\'eel vector orientation and the strain in the thin films, assuming that this variation arises solely from magnetoelastic effects, we quantify the order of magnitude of the magnetoelastic coupling coefficient as $b_{0}+2b_{1}=3*10^7 J\ m^{-3}$ . This information is key for the understanding of current-induced switching in antiferromagnets and for the design and use of such devices as active elements in spintronic devices.

Materials hosting magnetic skyrmions at room temperature could enable new computing architectures as well as compact and energetically efficient magnetic storage such as racetrack memories. In a racetrack device, information is coded by the presence/absence of magnetic skyrmions forming a chain that is moved through the device. The skyrmion Hall effect that would eventually lead to an annihilation of the skyrmions at the edges of the racetrack can be suppressed for example by anti-ferromagnetically-coupled skyrmions. However, avoiding modifications of the inter-skyrmion distances in the racetrack remains challenging. As a solution to this issue, a chain of bits could also be encoded by two different solitons such as a skyrmion and a chiral bobber. The major limitation of this approach is that it has solely been realized in B20-type single crystalline material systems that support skyrmions only at low temperatures, thus hindering the efficacy for future applications. Here we demonstrate that a hybrid ferro/ferri/ferromagnetic multilayer system can host two distinct skyrmion phases at room temperature. By matching quantitative magnetic force microscopy data with micromagnetic simulations, we reveal that the two phases represent tubular skyrmions and partial skyrmions (similar to skyrmion bobbers). Furthermore, the tubular skyrmion can be converted into a partial skyrmion. Such multilayer systems may thus serve as a platform for designing skyrmion memory applications using distinct types of skyrmions and potentially for storing information using the vertical dimension in a thin film device.

COVID-19 is a new pulmonary disease which is driving stress to the hospitals due to the large number of cases worldwide. Imaging of lungs can play a key role in monitoring of the healthy status. Non-contrast chest computed tomography (CT) has been used for this purpose, mainly in China, with a significant success. However, this approach cannot be used massively mainly for both high risk and cost and in some countries also because this tool is not extensively available. Alternatively, chest X-ray, although less sensitive than CT-scan, can provide important information about the evolution of pulmonary involvement during the disease, this aspect is very important to verify the response of a patient to treatments. Here, we show how to improve the sensitivity of chest X-ray via a nonlinear post processing tool, named PACE, combining properly fast and adaptive bidimensional empirical mode decomposition and contrast limited adaptive histogram equalization (CLAHE). The results show an enhancement of the image contrast as confirmed by three widely used metrics: (i) contrast improvement index, (ii) entropy, and (iii) measure of enhancement. This improvement gives rise to a detectability of more lung lesions as identified by two radiologists, which evaluate the images separately, and confirmed by CT-scans. Based on our findings this method is proved as a flexible and effective way for medical image enhancement and can be used as a post-processing step for medical image understanding and analysis., Comment: 17 pages, 6 figures, 51 references

Recent years have witnessed significant progresses in realizing skyrmions in chiral magnets1-4 and asymmetric magnetic multilayers5-13, as well as their electrical manipulation2,7,8,10. Equally important, thermal generation, manipulation and detection of skyrmions can be exploited for prototypical new architecture with integrated computation14 and energy harvesting15. It has yet to verify if skyrmions can be purely generated by heating16,17, and if their resultant direction of motion driven by temperature gradients follows the diffusion or, oppositely, the magnonic spin torque17-21. Here, we address these important issues in microstructured devices made of multilayers: (Ta_CoFeB_MgO)15, (Pt_CoFeB_MgO_Ta)15 and (Pt_Co_Ta)15 integrated with on-chip heaters, by using a full-field soft X-ray microscopy. The thermal generation of densely packed skyrmions is attributed to the low energy barrier at the device edge, together with the thermally induced morphological transition from stripe domains to skyrmions. The unidirectional diffusion of skyrmions from the hot region towards the cold region is experimentally observed. It can be theoretically explained by the combined contribution from repulsive forces between skyrmions, and thermal spin-orbit torques in competing with magnonic spin torques17,18,20,21 and entropic forces22. These thermally generated skyrmions can be further electrically detected by measuring the accompanied anomalous Nernst voltages23. The on-chip thermoelectric generation, manipulation and detection of skyrmions could open another exciting avenue for enabling skyrmionics, and promote interdisciplinary studies among spin caloritronics15, magnonics24 and skyrmionics3,4,12., Comment: All comments are welcome, Supplementary Materials are available upon request

Antiferromagnetic spintronics is a promising emerging paradigm to develop high-performance computing and communications devices. From a theoretical point of view, it is important to implement simulation tools that can support a data-driven development of materials having specific properties for particular applications. Here, we present a study focusing on antiferromagnetic materials having an easy-plane anisotropy and interfacial Dzyaloshinskii-Moriya interaction (IDMI). An analytical theory is developed and benchmarked against full numerical micromagnetic simulations, describing the main properties of the ground state in antiferromagnets and how it is possible to estimate the IDMI from experimental measurements. The effect of the IDMI on the electrical switching dynamics of the antiferromagnetic element is also analyzed. Our theoretical results can be used for the design of multi-terminal heavy metal/antiferromagnet memory devices.

The fast spin dynamics provide many opportunities for the future communication and memory technologies. One of the most promising examples is the domain wall (DW) racetrack memory. To achieve fast device performances, the high-speed motion of DWs is naturally demanded that leaves antiferromagnets (AFMs) and compensated ferrimagnets (FIMs) as the promising materials. While controlling and probing the dynamics of DWs in AFMs remains challenging, the fast motion of DWs with velocities around 1500 m/s has been demonstrated in metallic FIMs. The velocity of DWs in metallic FIMs is, however, suppressed by the magnetic damping of conduction electrons, which motivates us to explore how fast DWs can move in insulating FIMs where the conduction electron is absent. In this work, through synthesizing compensated FIM insulator Gd3Fe5O12 thin films with a perpendicular magnetic anisotropy, we demonstrate that the spin-orbit torque (SOT) induced motion of DWs along the Gd3Fe5O12/Pt racetrack can approach 6000 m/s. Our results show that the exceptionally fast motion of DWs can be achieved in compensated FIM insulators owing to small damping inherent to magnetic insulators, which could potentially facilitate the emerging ultrahigh-speed spintronic logics and racetrack memories by introducing insulating compensated FIMs as a new material platform., Comment: All comments are welcome

Novel computational paradigms may provide the blueprint to help solving the time and energy limitations that we face with our modern computers, and provide solutions to complex problems more efficiently (with reduced time, power consumption and/or less device footprint) than is currently possible with standard approaches. Spintronics offers a promising basis for the development of efficient devices and unconventional operations for at least three main reasons: (i) the low-power requirements of spin-based devices, i.e., requiring no standby power for operation and the possibility to write information with small dynamic energy dissipation, (ii) the strong nonlinearity, time nonlocality, and/or stochasticity that spintronic devices can exhibit, and (iii) their compatibility with CMOS logic manufacturing processes. At the same time, the high endurance and speed of spintronic devices means that they can be rewritten or reconfigured frequently over the lifetime of a circuit, a feature that is essential in many emerging computing concepts. In this perspective, we will discuss how spintronics may aid in the realization of efficient devices primarily based on magnetic tunnel junctions and how those devices can impact in the development of three unconventional computing paradigms, namely, reservoir computing, probabilistic computing and memcomputing that in our opinion may be used to address some limitations of modern computers, providing a realistic path to intelligent hybrid CMOS-spintronic systems., Comment: 18 pages and 4 figures

Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes recent advances in spintronics that have the potential to impact key areas of information technology and microelectronics. We identify four main axes of research: nonvolatile memories, magnetic sensors, microwave devices, and beyond-CMOS logic. We discuss state-of-the-art developments in these areas as well as opportunities and challenges that will have to be met, both at the device and system level, in order to integrate novel spintronic functionalities and materials in mainstream microelectronic platforms., Comment: Review written by the SpinFactory European Consortium

In modern building infrastructures, the chance to devise adaptive and unsupervised data-driven health monitoring systems is gaining in popularity due to the large availability of big data from low-cost sensors with communication capabilities and advanced modeling tools such as Deep Learning. The main purpose of this paper is to combine deep neural networks with Bidirectional Long Short Term Memory and advanced statistical analysis involving Instantaneous Frequency and Spectral Kurtosis to develop an accurate classification tool for tensile, shear and mixed modes originated from acoustic emission events (cracks). We investigated on effective event descriptors to capture the unique characteristics from the different types of modes. Tests on experimental results confirm that this method achieves promising classification among different crack events and can impact on the design of future on structural health monitoring (SHM) technologies. This approach is effective to classify incipient damages with 92% of accuracy, which is advantageous to plan maintenance., Comment: 19 pages, 2 tables, 9 figures

Ultrafast dynamics of antiferromagnetic materials is an appealing feature for novel spintronic devices. Several experiments have shown that both, the static states and the dynamical behavior of the antiferromagnetic order, are strictly related to stabilization of domains and domain wall (DW) motion. Hence for a quantitative understanding of statics and dynamics of multidomain states in antiferromagnetic materials a full micromagnetic framework is necessary. Here, we use this model to study the antiferromagnetic DW motion driven by the spin-orbit torque. The main result is the derivation of analytical expressions for the DW width and velocity that exhibit a very good agreement with the numerical simulations in a wide range of parameters. We also find that a mechanism limiting the maximum applicable current in an antiferromagnetic racetrack memory is the continuous nucleation of the domains from the edge, which is qualitatively different from what is observed in ferromagnetic racetracks.

The realization of THz sources is a fundamental aspect for a wide range of applications. Over different approaches, compact THz oscillators can be realized taking advantage of dynamics in antiferromagnetic (AFMs) thin films driven by spin-Hall effect. Here we perform a systematic study of these THz oscillators within a full micromagnetic solver based on the numerical solution of two coupled Landau-Lifshitz-Gilbert-Slonczewski equations, for the case of ultra-thin films, i.e. when the N\'eel temperature of an AFM is substantially reduced. We have found two different dynamical modes depending on the strength of the Dzyaloshinskii-Moriya interaction (DMI). At low DMI, a large amplitude precession is excited where both the magnetizations of the sublattices are in a uniform state and rotate in the same direction. At large enough DMI, the ground state of the AFM becomes non-uniform and the antiferromagnetic dynamics is characterized by ultrafast domain wall motion., Comment: manuscript 15 pages 7 figures - supplemental material 3 pages 2 figures

The understanding of the dynamical properties of skyrmion is a fundamental aspect for the realization of a competitive skyrmion based technology beyond CMOS. Most of the theoretical approaches are based on the approximation of a rigid skyrmion. However, thermal fluctuations can drive a continuous change of the skyrmion size via the excitation of thermal modes. Here, by taking advantage of the Hilbert-Huang transform, we demonstrate that at least two thermal modes can be excited which are non-stationary in time. In addition, one limit of the rigid skyrmion approximation is that this hypothesis does not allow for correctly describing the recent experimental evidence of skyrmion Hall angle dependence on the amplitude of the driving force, which is proportional to the injected current. In this work, we show that, in an ideal sample, the combined effect of field-like and damping-like torques on a breathing skyrmion can indeed give rise to such a current dependent skyrmion Hall angle. While here we design and control the breathing mode of the skyrmion, our results can be linked to the experiments by considering that the thermal fluctuations and/or disorder can excite the breathing mode. We also propose an experiment to validate our findings.

The increasing need to store large amounts of information with an ultra-dense, reliable, low power and low cost memory device is driving aggressive efforts to improve upon current perpendicular magnetic recording technology. However, the difficulties in fabricating small grain recording media while maintaining thermal stability and a high signal-to-noise ratio motivate development of alternative methods, such as the patterning of magnetic nano-islands and utilizing energy-assist for future applications. In addition, both from sensor and memory perspective three-dimensional spintronic devices are highly desirable to overcome the restrictions on the functionality in the planar structures. Here we demonstrate a three-dimensional magnetic-memory (magnetic page memory) based on thermally assisted and stray-field induced transfer of domains in a vertical stack of magnetic nanowires with perpendicular anisotropy. Using spin-torque induced domain shifting in such a device with periodic pinning sites provides additional degrees of freedom by allowing lateral information flow to realize truly three-dimensional integration.

A strategy to drive skyrmion motion by a combination of an anisotropy gradient and spin Hall effect has recently been demonstrated. Here, we study the fundamental properties of this type of motion by combining micromagnetic simulations and a generalized Thiele equation. We find that the anisotropy gradient drives the skyrmion mainly along the direction perpendicular to the gradient, due to the conservative part of the torque. There is some slower motion along the direction parallel to the anisotropy gradient due to damping torque. When an appropriate spin Hall torque is added, the skyrmion velocity in the direction of the anisotropy gradient can be enhanced. This motion gives rise to acceleration of the skyrmion as this moves to regions of varying anisotropy. This phenomenon should be taken into account in experiments for the correct evaluation of the skyrmion velocity. We employ a Thiele like formalism and derive expressions for the velocity and the acceleration of the skyrmion that match very well with micromagnetic simulation results.