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Controlling magnetism by using electric fields is a goal of research towards novel spintronic devices and future nano-electronics. For this reason, multiferroic heterostructures attract much interest. Here we provide experimental evidence, and supporting DFT analysis, of a transition in La0.65Sr0.35MnO3 (LSMO) thin film to a stable ferromagnetic phase, that is induced by the structural and strain properties of the ferroelectric BaTiO3 (BTO) substrate, which can be modified by applying external electric fields. X-ray Magnetic Circular Dichroism (XMCD) measurements on Mn L edges with a synchrotron radiation show, in fact two magnetic transitions as a function of temperature that correspond to structural changes of the BTO substrate. We also show that ferromagnetism, absent in the pristine condition at room temperature, can be established by electrically switching the BTO ferroelectric domains in the out-of-plane direction. The present results confirm that electrically induced strain can be exploited to control magnetism in multiferroic oxide heterostructures.

Using first-principles calculations we predict that the layered-perovskite metal Bi$_5$Mn$_5$O$_{17}$ is a ferromagnet, ferroelectric, and ferrotoroid which may realize the long sought-after goal of a room-temperature ferromagnetic single-phase multiferroic with large, strongly coupled, primary-order polarization and magnetization. Bi$_5$Mn$_5$O$_{17}$ has two nearly energy-degenerate ground states with mutually orthogonal vector order parameters (polarization, magnetization, ferrotoroidicity), which can be rotated globally by switching between ground states. Giant cross-coupling magnetoelectric and magnetotoroidic effects, as well as optical non-reciprocity, are thus expected. Importantly, Bi$_5$Mn$_5$O$_{17}$ should be thermodynamically stable in O-rich growth conditions, and hence experimentally accessible., Comment: 7 pages, 7 figures

Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these compounds. At the interface between such materials, this interplay can lead to phenomena that are present in none of the original constituents such as the formation of the interfacial 2D electron system (2DES) discovered at the LAO3/STO3 (LAO/STO) interface. In samples prepared by growing a LAO layer onto a STO substrate, the 2DES is confined in a band bending potential well, whose width is set by the interface charge density and the STO dielectric properties, and determines the electronic band structure. Growing LAO (2 nm) /STO (x nm)/LAO (2 nm) heterostructures on STO substrates allows us to control the extension of the confining potential of the top 2DES via the thickness of the STO layer. In such samples, we explore the dependence of the electronic structure on the width of the confining potential using soft X-ray ARPES combined with ab-initio calculations. The results indicate that varying the thickness of the STO film modifies the quantization of the 3d t2g bands and, interestingly, redistributes the charge between the dxy and dxz/dyz bands.

We study the electronic transport coefficients and the thermoelectric figure of merit ZT in $n$-doped Mg$_3$Sb$_2$ based on density-functional electronic structure and Bloch-Boltzmann transport theory with an energy- and temperature-dependent relaxation time. Both the lattice and electronic thermal conductivities affect the final ZT significantly, hence we include the lattice thermal conductivity calculated ab initio. Where applicable, our results are in good agreement with existing experiments, thanks to the treatment of lattice thermal conductivity and the improved description of electronic scattering. ZT increases monotonically in our T range (300 to 700 K), reaching a value of 1.6 at 700 K; it peaks as a function of doping at about 3$\times$10$^{19}$ cm$^{-3}$. At this doping, ZT$>$1 for T$>$500 K., Comment: 8 pages, 6 figures, further expanded, now accepted

Ferroelectric materials are characterized by a spontaneous polar distortion. The behavior of such distortions in the presence of free charge is the key to the physics of metallized ferroelectrics in particular, and of structurally-polar metals more generally. Using first-principles simulations, here we show that a polar distortion resists metallization and the attendant suppression of long-range dipolar interactions in the vast majority of a sample of 11 representative ferroelectrics. We identify a meta-screening effect, occurring in the doped compounds as a consequence of the charge rearrangements associated to electrostatic screening, as the main factor determining the survival of a non-centrosymmetric phase. Our findings advance greatly our understanding of the essentials of structurally-polar metals, and offer guidelines on the behavior of ferroelectrics upon field-effect charge injection or proximity to conductive device elements., Comment: 13 pages, 9 figures

Tungsten trioxide is a versatile material with widespread applications ranging from electrochromic and optoelectronic devices to water splitting and catalysis of chemical reactions. For technological applications, thin films of WO3 are particularly appealing, taking advantage from high surface-to-volume ratio and tunable physical properties. However, the growth of stoichiometric, crystalline thin films is challenging because the deposition conditions are very sensitive to the formation of oxygen vacancies. In this work, we show how background oxygen pressure during pulsed laser deposition can be used to tune the structural and electronic properties of WO3 thin films. By performing X-ray diffraction and low-temperature transport measurements, we find changes in WO3 lattice volume up to 10%, concomitantly with an insulator-to-metal transition as a function of increased level of electron doping. We use advanced ab initio calculations to describe in detail the properties of the oxygen vacancy defect states, and their evolution in terms of excess charge concentration. Our results depict an intriguing scenario where structural, electronic, optical, and transport properties of WO3 single-crystal thin films can all be purposely tuned by a suited control of oxygen vacancies formation during growth.

Interfaces between complex oxides constitute a unique playground for 2D electron systems (2DES), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is one of the most studied in this regard, and its origin is determined by both the presence of a polar field in LaAlO3 and the insurgence of point defects, such as oxygen vacancies and intermixed cations. These defects usually reside in the conduction channel and are responsible for a decreased electronic mobility. In this work we use an amorphous WO3 overlayer to control the defect formation and obtain an increased electron mobility and effective mass in WO3/LaAlO3/SrTiO3 heterostructures. The studied system shows a sharp insulator-to-metal transition as a function of both LaAlO3 and WO3 layer thickness. Low-temperature magnetotransport reveals a strong magnetoresistance reaching 900% at 10 T and 1.5 K, the presence of multiple conduction channels with carrier mobility up to 80 000 cm2/Vs and an unusually high effective mass of 5.6 me. The amorphous character of the WO3 overlayer makes this a versatile approach for defect control at oxide interfaces, which could be applied to other heterestrostures disregarding the constraints imposed by crystal symmetry.

The possibility that metals may support ferroelectricity is an open issue. Anderson and Blount showed that certain martensitic transitions involve inversion symmetry breaking and the formal existence of a polar axis, so 'metallic ferroelectric' behavior has been claimed for metals undergoing a centrosymmetric (CS) to non-CS structural transformation (Cd2ReO7, LiOsO3) or natively non-CS (SrCaRu2O), or for ferroelectric insulators whose polar distortion survives moderate metallicity induced by doping or proximity. However, none of these systems, nor any other to our knowledge, embodies a truly ferroelectric metal with native switchable polarization and native metallicity coexisting in a single phase. Here we report the first-ever theoretical prediction of such a material. By first-principles calculations, we show that the layered perovskite Bi5Ti5O17 has a non-zero density of states at the Fermi level and metal-like conductivity, as well as a spontaneous polarization in zero field. Further, we predict that the polarization of Bi5Ti5O17 is switchable both in principle, as the material complies with the sufficient symmetry requirements, and in practice, as Bi5Ti5O17 can sustain a sizable potential drop along the polar direction, as needed to revert its polarization by application of an electric bias., Comment: 25 pages, 8 figures, 1 table

The question of optical bandgap anisotropy in the monoclinic semiconductor $\beta$-Ga2O3 was revisited by combining accurate optical absorption measurements with theoretical analysis, performed using different advanced computation methods. As expected, the bandgap edge of bulk $\beta$-Ga2O3 was found to be a function of light polarization and crystal orientation, with the lowest onset occurring at polarization in the ac crystal plane around 4.5-4.6 eV; polarization along b unambiguously shifts the onset up by 0.2 eV. The theoretical analysis clearly indicates that the shift of the b onset is due to a suppression of the transition matrix elements of the three top valence bands at $\Gamma$ point., Comment: 11 pages, 5 figures

The resilience to deep traps and localized defect formation is one of the important aspects that qualify a material as suited photo-absorber in solar cell devices. Here we investigate by ab-initio calculations the fundamental physics and chemistry of a number of possible localized defects in hybrid methylammonium lead-iodide perovskites. Our analysis encompasses a number of possible molecular fragments deriving from the dissociation of methylammonium. In particular, we found that in stoichiometric conditions both ammonia and methylamine molecules present lone-pair localized levels well within the perovskite band gap, while the radical cation CH$_2$NH$_3$$^+$ observed by EPR after irradiation injects partially-occupied levels into the band gap but only in $p$-type conditions. These defects are thus potentially capable to significantly alter absorption and recombination properties. Amazingly, we found that additional interstitial Cl is capable to remove these localized states from the band gap. These results are consistent with the observed improvement of photoabsorption properties due to the Cl inclusion in the solution processing., Comment: preprint format, 23 pages, 10 figures

We report the electronic properties of the quadruple perovskite CaCu$_{3}$Ti$_{4}$O$_{12}$ as obtained via several density-functional based methods, and propose a new interpretation of optical experiments to the effect that four distinct transitions (centered around 0.7, 1.5, 2.5, and 3.5 eV) contribute to the spectrum. The comparison with experiment is satisfactory, especially after we account for the effects of spin disorder, which does not close the fundamental gap but suppresses the transition intensity. We find that some of the methods we employ tend to overestimate considerably the gaps for standard values of the respective adjustable parameters., Comment: 10 pages, 13 figures, 1 table

First-principles density functional calculations show that the $\textrm{SrRuO}_{3}/\textrm{PbTiO}_{3}/\textrm{SrRuO}_{3}$ multiferroic junction with asymmetric (RuO$_{2}$/PbO and TiO$_{2}$/SrO) interfaces has a large ferroelectric depolarizing field, whose switching changes the interface transmission probabilities for tunneling electrons, leading to electroresistance modulation over several orders of magnitude. The switching further affects the interface spin density, naturally driving magnetoresistance as well as modulated spin-dependent in-plane resistivity, which may be exploited in field-effect devices., Comment: 7 pages, 10 figures, 1 table; extended upon review

Polarization-controlled synchrotron radiation was used to map the electronic structure of buried conducting interfaces of LaAlO$_3$/SrTiO$_3$ in a resonant angle-resolved photoemission experiment. A strong dependence on the light polarization of the Fermi surface and band dispersions is demonstrated, highlighting the distinct Ti 3d orbitals involved in 2D conduction. Samples with different 2D doping levels were prepared and measured by photoemission, revealing different band occupancies and Fermi surface shapes. A direct comparison between the photoemission measurements and advanced first-principle calculations carried out for different 3d-band fillings is presented in conjunction with the 2D carrier concentration obtained from transport measurements., Comment: Main Text: 12 pages, 4 figures

We explore via density functional calculations the magnetic doping of a topological ferroelectric as an unconventional route to multiferroicity. Vanadium doping of the layered perovskite La$_{2}$Ti$_{2}$O$_{7}$ largely preserves electric polarization and produces robust ferromagnetic order, hence proper multiferroicity. The marked tendency of dopants to cluster into chains results in an insulating character at generic doping. Ferromagnetism stems from the symmetry breaking of the multi-orbital V system via an unusual "antiferro"-orbital order, and from the host's low-symmetry layered structure., Comment: 4 pages, 3 figures; Physical Review Letters 109, in print (2012)

We interpret via advanced ab initio calculations the multiple phase transitions observed recently in ultra-thin LaNiO$_{3}$/LaAlO$_{3}$ superlattices. The ground state is insulating, charge-ordered, and antiferromagnetic due to concurrent structural distortion and weak valency disproportionation. We infer distinct transitions at 40 K and 150 K, respectively, from antiferromagnetic order to moment disorder, and from structurally-dimerized insulator to an undistorted metallic Pauli paramagnet (exhibiting a cuprate-like Fermi surface). The results are in satisfactory agreement with experiment., Comment: ~4 pages, 4 figures; further improvement during review

Using an innovative first-principles band theory enabling the exploration of Mott-insulating magnetic cuprates, we study the Fermi surface of underdoped Y$_{1-x}$Ca$_x$Ba$_2$Cu$_3$O$_6$ in a selection of magnetically ordered and polaronic states. All phases exhibit qualitatively similar, hole-like nodal-point small pockets. Their properties (area, masses, mass sign) only partially match those extracted from recent quantum-oscillation experiments. Ab initio calculations, therefore, do not straightforwardly support a magnetic origin of quantum oscillations., Comment: 4 pages, 4 figures

We study the Fermi surface of metallic, non-magnetic \textit{ortho}-II YBa$_2$Cu$_3$O$_{6.5}$ using three different density-functional-based band-structure techniques (GGA, GGA+U, PSIC). The calculated Fermi surface exhibits no pockets in GGA+U and PSIC, a minor one in GGA. Upon shifting the Fermi level in the vicinity of the calculated value, we instead observe several pocket structures. We calculate their cross-sectional areas and cyclotron masses. Overall, our calculations show no solid evidence of the existence of electron-like --nor, in fact, of any-- Fermi surface pockets in this phase. This suggests that the origin of the pockets should be sought for in other, different phases., Comment: 7 pages, 5 figures, in print on PRB 79 (2009)

High-kappa dielectrics for insulating layers are a current key ingredient of microelectronics. X2O3 sesquioxide compounds are among the candidates. Here we show for a typical material of this class, ScO3, that the relatively modest dielectric constant of its crystalline phase is enhanced in the amorphous phase by over 40% (from ~15 to ~22). This is due to the disorder-induced activation of low frequency cation-related modes which are inactive or inefficient in the crystal, and by the conservation of effective dynamical charges (a measure of atomic polarizability). The analysis employs density-functional energy-force and perturbation-theory calculations of the dielectric response of amorphous samples generated by pair-potential molecular dynamics., Comment: 3 pages, 3 figures, submitted to APL

We describe from advanced first principles calculations the energetics of oxygen doping and its relation to insulator-metal transitions in underdoped YBa$_2$Cu$_3$O$_{6+x}$. We find a strong tendency of doping oxygens to order into non-magnetic Cu$^{1+}$O$_x$ chains at any $x$. Ordering produces one-dimensional metallic bands, while configurations with non-aligned oxygens are insulating. The Cu$^{2+}$O$_2$ planes remain insulating and antiferromagnetic up to a threshold between $x$=0.25 and 0.5, above which a paramagnetic normal-metal state prevails. The in-plane antiferro-paramagnetic competition depends on $x$, but only weakly on the ordering state of the chains., Comment: 4 pages, 6 figures, 2 tables

We report calculations indicating that amorphous RAO$_3$ oxides, with R and A trivalent cations, have approximately the same static dielectric constant as their perovskite crystal phase. The effect is due to the disorder-activated polar response of non-polar crystal modes at low frequency, which compensates a moderate but appreciable reduction of the ionic dynamical charges. The dielectric response was studied via density-functional perturbation theory. Amorphous samples were generated by molecular dynamics melt-and-quench simulations., Comment: 5 pages, 3 figures

We present the first ab-initio band-theory-based description of spin-compensated polarons (known as Zhang-Rice singlets) in a hole-doped cuprate, specifically one-dimensional Ca_{2+x} Y_{2-x} Cu_5 O_10. Zhang-Rice singlets are many-particle configurations relevant to the exotic behavior of hole-doped cuprates, stemming from spontaneous charge localization. They appear in our case-study material above a threshold doping, successively turning the insulating undoped antiferromagnet into a gap insulator, a singlet-rich metallic paramagnet, and finally, a singlet-saturated insulating diamagnet., Comment: 4 pages, 6 figures, submitted to PRL

Large values of Born effective charges are generally considered as reliable indicators of the genuine tendency of an insulator towards ferroelectric instability. However, these quantities can be very much influenced by strong electron correlation and metallic behavior, which are not exclusive properties of ferroelectric materials. In this paper we compare the Born effective charges of some prototypical ferroelectrics with those of magnetic, non-ferroelectric compounds using a novel, self-interaction free methodology that improves on the local-density approximation description of the electronic properties. We show that the inclusion of strong-correlation effects systermatically reduces the size of the Born effective charges and the electron localization lengths. Furthermore we give an interpretation of the Born effective charges in terms of band energy structure and orbital occupations which can be used as a guideline to rationalize their values in the general case., Comment: 10 pages, 4 postscript figures

Local-spin-density functional calculations may be affected by severe errors when applied to the study of magnetic and strongly-correlated materials. Some of these faults can be traced back to the presence of the spurious self-interaction in the density functional. Since the application of a fully self-consistent self-interaction correction is highly demanding even for moderately large systems, we pursue a strategy of approximating the self-interaction corrected potential with a non-local, pseudopotential-like projector, first generated within the isolated atom and then updated during the self-consistent cycle in the crystal. This scheme, whose implementation is totally uncomplicated and particularly suited for the pseudopotental formalism, dramatically improves the LSDA results for a variety of compounds with a minimal increase of computing cost., Comment: 18 pages, 14 figures

The electronic structures of Mn-doped zincblende GaAs and wurtzite GaN are calculated using both standard local-density functional theory (LSDA), and a novel pseudopotential self-interaction-corrected approach (pseudo-SIC), able to account for the effects of strong correlation. We find that, as expected, the self-interaction is not strong in (Ga,Mn)As, because the Fermi energy is crossed by weakly correlated As p - Mn d hybridized bands and the Mn 3d character is distributed through the whole valence band manifold. This result validates the extensive literature of LSDA studies on (Ga,Mn)As, including the conclusion that the ferromagnetism is hole-mediated. In contrast, the LSDA gives a qualitatively incorrect band structure for (Ga,Mn)N, which is characterized by localized Mn 3d bands with very strong self-interaction. Our pseudo-SIC calculations show a highly confined hole just above the Fermi energy in the majority band manifold. Such a band arrangement is consistent with (although by no means conclusive evidence for) a recent suggestion that formation of Zhang-Rice magnetic polarons is responsible for hole-mediated ferromagnetism in (Ga,Mn)N., Comment: 6 pages, 6 figures. To appear on Chem. Phys

We show that the observed transition from rocksalt to orthorhombic P$_{nma}$ symmetry in CrN can be understood in terms of stress anisotropy. Using local spin density functional theory, we find that the imbalance between stress stored in spin-paired and spin-unpaired Cr nearest neighbors causes the rocksalt structure to be unstable against distortions and justifies the observed antiferromagnetic ordering. This stress has a purely magnetic origin, and may be important in any system where the coupling between spin ordering and structure is strong., Comment: 4 pages (two columns) 4 figures

The (001) surface of La_{1-x}Ca_xMnO_3 system in various magnetic orderings is studied by first principle calculations. A general occurrence is that z^2 dangling bond charge -- which is ``invisible'' in the formal valence picture -- is promoted to the bulk gap/Fermi level region. This drives a double-exchange-like process that serves to align the surface Mn spin with its subsurface neighbor, regardless of the bulk magnetic order. For heavy doping, the locally ``ferromagnetic'' coupling is very strong and the moment enhanced by as much as 30% over the bulk value., Comment: 6 pages, 4 figures

We present results of local spin density approximation pseudopotential calculations for the ferroelectromagnet, yttrium manganite (YMnO3). The origin of the differences between ferroelectric and non-ferroelectric perovskite manganites is determined by comparing the calculated properties of yttrium manganite in its ferroelectric hexagonal and non-ferroelectric orthorhombic phases. In addition, orthorhombic YMnO3 is compared with the prototypical non-ferroelectric manganite, lanthanum manganite. We show that, while the octahedral crystal field splitting of the cubic perovskite structure causes a centro-symmetric Jahn-Teller distortion around the Mn3+ ion, the markedly different splitting in hexagonal perovskites creates an electronic configuration consistent with ferroelectric distortion. We explain the nature of the distortion, and show that a local magnetic moment on the Mn3+ ion is a requirement for it to occur., Comment: Replacement of earlier version with error in pseudopotential

Drawing on the theory of quantum mechanical stress, we introduce the stress density in density functional theory. In analogy with the Chetty-Martin energy density, the stress density provides a spatial resolution of the contributions to the integrated macroscopic stress tensor. We give specific prescriptions for a practical and efficient implementation in the plane wave ultrasoft pseudopotential method within the local-density approximation. We demonstrate the abilities of the stress density studying a set of representative test cases from surface and interface physics. In perspective, the stress density emerges as vastly more powerful and predictive than the integrated macroscopic stress., Comment: RevTeX 10 pages, embedded figures

The Mn-terminated (001) surface of the stable anti-ferromagnetic insulating phase of cubic perovskite CaMnO$_3$ is found to undergo a magnetic reconstruction consisting on a spin-flip process at surface: each Mn spin at the surface flips to pair with that of Mn in the subsurface layer. In spite of very little Mn-O charge transfer at surface, the surface behavior is driven by the $e_g$ states due to $d_{xy}$ $\to$ $d_{z^2}$ charge redistribution. These results, based on local spin density theory, give a double exchange like coupling that is driven by $e_g$ character, not additional charge, and may have relevance to CMR materials., Comment: 4 pages, 5 figures reference added Fig. 3 modified. Caption of Fig. 5 modified

Ab-initio results for structural and electronic properties of NaCl-type FeN are presented in a framework of plane-wave and ultrasoft pseudopotentials. Competition among different magnetic ordering is examined. We find the ferromagnetic phase stable overall. Stabilization over the unpolarized phase is obtained by splitting one flat t_2g-type band crossing the Fermi energy. A comparison with CrN is considered. We find large differences in the properties of the two systems that can be addressed to the smaller ionicity and magnetization of FeN., Comment: 5 pages, 4 figures, twocolumn latex style Sentence changed in Section III line 10

We present ab initio total energy and stress calculations for the unreconstructed and (2x1)-missing-row reconstructed Ir (110) and Rh (110) surfaces. We use a model based on ab initio results to show that the (Nx1) reconstruction is a faceting transition to a long-wavelength--corrugated (111)-like surface, and find the 3x1 structure to be the most stable for Ir in accordance with experiment. We then use the stress density to analyze the stress increase upon reconstruction, and find it to be due to a changed balance of tensile and compressive contributions in the near-surface region., Comment: RevTeX 4 pages, 3 figures

Relaxations at nonpolar surfaces of III-V compounds result from a competition between dehybridization and charge transfer. First principles calculations for the (110) and (10$\bar{1}$0) faces of zincblende and wurtzite AlN, GaN and InN reveal an anomalous behavior as compared with ordinary III-V semiconductors. Additional calculations for GaAs and ZnO suggest close analogies with the latter. We interpret our results in terms of the larger ionicity (charge asymmetry) and bonding strength (cohesive energy) in the nitrides with respect to other III-V compounds, both essentially due to the strong valence potential and absence of $p$ core states in the lighter anion. The same interpretation applies to Zn II-VI compounds., Comment: RevTeX 7 pages, 8 figures included; also available at http://kalix.dsf.unica.it/preprints/; improved after review

Prediction criteria for surface reconstructions are discussed, with reference to ab initio calculations of the (110)-$1\times 2$ missing-row and (100)-$5\times 1$ quasi-hexagonal reconstructions of Ir and Rh., Comment: 3 pages RevTeX two-column, to appear in Surface Science

Ab initio local-density-functional-theory calculations of formation energies, surface stress, and multilayer relaxations are reported for the (111), (100), and (110) surfaces of Rh. The study is performed using ultrasoft pseudopotentials and plane waves in a parallel implementation. Calculated values are in good agreement with previous studies where they exist. In particular, we confirm recent results on surface stress anisotropy of transition metals., Comment: Twocolumn revtex, 4 pages, no figures