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The microstructure and energy-loss near-edge structure (ELNES) of pulsed cathodic arc and pulsed magnetron sputtered WO3 thin films were investigated. It was found that the cathodic arc deposited material consisted of the alpha-WO3 phase with a high degree of crystallinity. In contrast, the magnetron sputtered material was highly disordered making it difficult to determine its phase. A self-consistent real space multiple scattering approach was used to calculate the NES of the various phases of WO3. Each phase was found to exhibit a unique NES allowing different phases of WO3 to be identified. The real space approach also allowed the origin of the main features in the NES to be investigated as the cluster size increased. The calculated NES for the room temperature gamma-WO3 was found to compare well to previous X-ray absorption spectra and to NES obtained by full-potential band structure calculation.

The phase behavior of carbon at high pressure and the search for carbon structures denser than diamond has been explored for decades showing large discrepancies, with many fundamental questions remaining unresolved. Here we show evidence of melting above the graphite-diamond-liquid (GDL) triple point (∼13 GPa, 4000 K) up to 50 GPa on samples recovered from single flash-heating events using spectroscopic and electron microscopic methods. The results show that for all pressures, diamond melts below the triple point temperature contradicting previous studies, most of which predict a positive slope of the melting curve. [ABSTRACT FROM AUTHOR]

Hafnium oxide films were deposited with a range of substrate temperatures using a filtered cathodic vacuum arc deposition system. The microstructure, electronic structure, and electrical breakdown of the films were characterized. In films deposited at temperatures above 200 °C, the microstructure became more ordered and x-ray diffraction indicated that the dominant phase was monoclinic hafnium oxide. Evidence for the presence of the tetragonal phase was also found in the films deposited at temperatures above 400 °C. The near edge structure of the oxygen K-edge measured using x-ray absorption spectroscopy, provided further evidence that films prepared at high temperatures contained a combination of the monoclinic and tetragonal phases. Films deposited at room temperature were disordered and exhibited the best electrical breakdown characteristics. The electrical breakdown of the films deteriorated as the crystallinity increased with increasing deposition temperature. These results support the proposition that electrical breakdown paths may occur along grain boundaries in polycrystalline hafnium oxide films and therefore a disordered microstructure is preferable. [ABSTRACT FROM AUTHOR]

Ordered arrays of gold-rich particles, with diameters ranging from 50 nm to 180 nm, have been formed on a silicon (100) surface through pre-patterning by nanoindentation. Indentation and gold deposition of the sample is followed by thermal processing, causing the gold to become trapped at the indentation sites. We suggest that gold trapping is via an alloying process with the underlying Si substrate where the native oxide is structurally compromised by the indentation process. The final size for a given particle is directly dependent on the size of the indentation site. It has also been demonstrated that excess gold found on the surface outside of these indentation sites can be readily removed via simple mechanical abrasion without affecting the particles within the indent. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Co-trimoxazole was compared with nafcillin against Staphylococcus aureus in vitro and in the therapy of experimental Staph. aureus meningitis in rabbits. Co-trimoxazole (trimethoprim:sulphamethoxazole in a 1:20 ratio) was synergistic against 22/24 strains of Staph. aureus in vitro. The MBC90 of co-trimoxazole and nafcillin were 0.156-3.12 mg/l and 0.25 mg/l, respectively, concentrations below those achievable in purulent cerebrospinal fluid. The rate of bacterial killing (Staph. aureus) by co-trimoxazole and nafcillin were similar in both broth and pooled CSF in vitro. However, the MBC increased and the rate of bactericidal activity of both agents declined when tested in CSF at a higher inoculum (10(7) cfu/ml). During continuous intravenous infusion therapy of a reproducible, uniformly fatal (if untreated) model of experimental Staph. aureus meningitis, serum concentrations of all agents closely approximated those found in humans receiving standard parenteral regimens. The mean percent penetration into CSF ([CSF]/[serum] X 100) was 2.9, 35.6 and 27.1% for nafcillin, trimethoprim and sulphamethoxazole, respectively. Although both nafcillin and co-trimoxazole therapy reduced CSF Staph. aureus concentrations significantly more rapidly (P less than 0.001) when compared to untreated controls, the bactericidal rate was modest. The CSF was rendered sterile in 0/64 animals treated with either regimen for 8 h. Nafcillin was more rapidly bactericidal in vivo (P less than 0.03) than co-trimoxazole in this model. Caution is advised in the use of co-trimoxazole for infections of the central nervous system caused by Staph. aureus. [ABSTRACT FROM AUTHOR]

This paper describes the morphology, stoichiometry, microstructure and gas sensing properties of nanoclustered SnO(x) thin films prepared by Sn evaporation followed by a rheotaxial growth and thermal oxidation process. Electron microscopy was used to investigate, in detail, the evolution of the films as the oxidation temperature was increased. The results showed that the contact angle, perpendicular height, volume and microstructure of the clusters all changed significantly as a result of the thermal oxidation processes. Electron diffraction and x-ray photoelectron spectroscopy measurements revealed that after oxidation at a temperature of 600 °C, the Sn clusters were fully transformed into porous three-dimensional polycrystalline SnO(2) clusters. On the basis of these results, a prototype SnO(2) sensor was fabricated and sensing measurements were performed with H(2) and NO(2) gases. At operating temperatures of 150-200 °C the film produced measurable responses to concentrations of H(2) as low as 600 ppm and NO(2) as low as 500 ppb.