1. Schottky Barrier Thin Film Transistor (SB-TFT) on low-temperature polycrystalline silicon
- Author
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De Iacovo, A. A, Ferrone, A. Ab, Minotti, A, Pecora, A., DE IACOVO, ANDREA, COLACE, Lorenzo, MAIOLO, LUCA, De Iacovo, A. A, Ferrone, A. Ab, Colace, Lorenzo, Minotti, A, Maiolo, Luca, Pecora, A., and DE IACOVO, Andrea
- Subjects
Materials science ,Schottky barrier ,Low-temperature polycrystalline silicon ,02 engineering and technology ,engineering.material ,Metal–semiconductor junction ,01 natural sciences ,law.invention ,law ,0103 physical sciences ,Materials Chemistry ,Electrical and Electronic Engineering ,010302 applied physics ,business.industry ,Subthreshold conduction ,Doping ,Transistor ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Polycrystalline silicon ,Thin-film transistor ,engineering ,Optoelectronics ,0210 nano-technology ,business - Abstract
We report on the fabrication and characterization of Schottky barrier transistors on polycrystalline silicon. The transistors were realized exploiting Cr-Si and Ti-Si Schottky barrier with a low thermal budget process, compatible with polymeric, ultraflexible substrates. We obtained devices with threshold voltages as low as 1.7 V (for n channel) and 4 V (for p channel) with channel lengths ranging from 2 to 40 μm. Resulting on/off ratios are as high as 5 · 103. The devices showed threshold voltages and subthreshold slopes comparable with already published N- and P-MOS devices realized with the same process on polyimide substrates thus representing a cheaper and scalable alternative to ultraflexible transistors with doped source and drain.
- Published
- 2016