167 results on '"Fernández-Garrido, S."'
Search Results
2. In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
3. In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
4. High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
5. Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
6. Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
7. A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
8. Growth modes and coupled morphological-compositional modulations in GaP1-xNx layers grown on nominally (001)-oriented Si substrates
9. H$_{2}$-diluted precursors for GaAs doping in chemical beam epitaxy
10. External control of GaN band bending using phosphonate self-assembled monolayers
11. Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si(001) by chemical vapour transport
12. Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires
13. Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN$_{\boldsymbol{x}}$: effects of surface electric fields
14. Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy
15. Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001).
16. Growth of silicon- and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr4 precursors
17. Crystal-phase quantum dots in GaN quantum wires
18. Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001)
19. Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence
20. Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency
21. Electronic properties of air-exposed GaN(11-00) and (0001) surfaces after several device processing compatible cleaning steps
22. Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns
23. Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy
24. Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
25. Correlating composition and luminescence in AlInGaN epilayers
26. Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si(001) by chemical vapour transport
27. Correction to Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy
28. Radius-dependent homogeneous strain in uncoalesced GaN nanowires
29. Corrigendum to “Electronic properties of air-exposed GaN(1 −1 0 0) and (0 0 0 1) surfaces after several device processing compatible cleaning steps” [Appl. Surf. Sci. 495 (2019) 143514]
30. Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy
31. Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy
32. Erratum: Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous AlxOy: in situ quadrupole mass spectrometry studies (2019 Nanotechnology 30 154002)
33. Electron spin dynamics in mesoscopic GaN nanowires
34. Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al x O y : in situ quadrupole mass spectrometry studies
35. Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3
36. Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition
37. InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy.
38. Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy.
39. Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy.
40. In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction.
41. Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils
42. Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy
43. Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles
44. A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111).
45. Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content.
46. (V)EELS characterization of InAlN/GaN distributed Bragg reflectors
47. Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process
48. Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film
49. Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
50. Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.