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The celadon with black body is a special and famous type of ceramic artifact in the Chinese history. They have crackled celadon glaze that was a notable typological features. Their bodies are noticeably darker in color than regular celadon wares. This type of ceramic wares mainly includes Southern Song Guan wares from Hangzhou and Longquan celadon with black body that might be classed as Ge wares. They were the top ceramic artifacts in ancient China and have been attracting many attentions. The wares from Longquan and Hangzhou have the similar appearance so that it is difficult to distinguish them from each other. In this paper, we collected some ceramic fragments of Longquan celadon with black body from two kiln sites (Xiaomei Town and Wayaoyang) and Southern Song Guan wares from Laohudong, Hangzhou. We applied the energy dispersive X-ray fluorescence analysis to find the similarities and differences in chemical composition between them. The results indicated that the bodies of Longquan and Southern Song Guan samples were made from porcelain stone. Although all their bodies look darker, the contents of coloring elements (iron and titanium) in them were different. The bodies from Laohudong have lower iron and higher titanium than Longquan samples. Their glazes are rich in lime, and the data indicated that the wood ash was the most likely source of the lime-rich component. Depending on the chemical composition of the sample, such as the concentration of manganese and rubidium, one can determine the provenance of samples produced in these three manufacturing sites.

The dry etching characteristic of new Ti0.5Sb2Te3(TST) phase change material was investigated by using the CF4 and Ar gas mixture. The research mainly focuses on how to optimize the experimental parameters such as gas flow rate within the chamber, CF4 /Ar flow ratio, the chamber background pressure and the incident RF power applied to the lower electrode. The results show that CF4 mainly plays a role of chemical etching and Ar plays a role of physical bombardment. The etching rate of TST films increases with the increasing concentration of CF4 in the gas mixture. The etching chamber pressure has less effect on the TST film etching speed, while the etching power has larger effect. The etch rate is up to 126 nm/min with the smooth etched surface(RMS=0.82 nm) and TST film profile is almost vertical(approaching 90°) using optimized etching parameters, including the total flow rate of 50 sccm, CF4 concentration of 26%, power of 400 W and pressure of 13.3 Pa.

Elemental analysis of archaeological bone plays an important role in the study of the dietary habits of ancient animals. The elemental characteristic of diagenetic skeletons depends on the surrounding circumstance. The study of environmental influence on the elemental concentration of ancient bone is significant. In this paper, the diagenetic influence on archaeological skeletons is analyzed by microbeam X-ray fluorescence (μ-XRF). The results show that the enamel is an excellent barrier to the diagenesis and the element Sr in bone isn't susceptible to contamination from the buried environment.

The shallow hydrogenic donor impurity states in square, V-shaped, and parabolic quantum wells are studied in the framework of effective-mass envelope-function theory using the plane wave basis. The first four impurity energy levels and binding energy of the ground state are more easily calculated than with the variation method. The calculation results indicate that impurity energy levels decrease with the increase of the well width and decrease quickly when the well width is small. The binding energy of the ground state increases until it reaches a maximum value, and then decreases as the well width increases. The results are meaningful and can be widely applied in the design of various optoelectronic devices.

The binding energy of a hydrogenic donor impurity in zinc-blende (ZB) InGaN quantum dot (QD) is calculated in the framework of effective-mass envelope-function theory using the plane wave basis. It is shown that the donor binding energy is highly dependent on the impurity position, QD size and the external electric field. The symmetry of the electron probability distribution is broken and the maximum of the donor binding energy is shifted from the centre of QD in the presence of the external electric field. The degenerating energy levels for symmetrical positions with respect to the centre of QD are split. The splitting increases with the increase of QD height while the splitting increases up to a maximum value and then decreases with the increase of QD radius.

Coherent tunnelling is studied in framework of the effective mass approximation for an asymmetric coupled quantum well. The Hartree potential due to the electron-electron interaction is considered in our calculation. The effects of the longitudinal and transverse magnetic field on coherent tunnelling characteristics are discussed. It has been found that the external field plays an important role in modulating the electron states.

The propagation property of metal wires terahertz waveguides is studied and simulated under the framework of the Sommerfeld model. The group velocity dispersion, attenuation amplitude, transverse magnetic mode and propagating energy have been obtained by numerically solving the complex eigenvalue equation for the propagation constant. It is found that the group velocity dispersion and attenuation amplitude decrease with the increasing radii of metal wires. The energy power within the dielectric layer increase with the increase of radiation frequency.

Sn-doped Ge2Sb2Te5 thin films deposited on Si(100)/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallization temperatures of the 3.58 at.%, 6.92 at.% and 10.04 at.% Sn-doped Ge2Sb2Te5 thin films have decreases of 5.3, 6.1 and 0.9°C, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystalline phase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2Te5 thin films increases about 2–10 times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. In addition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2Te5 thin films in the crystalline state has been observed, which can play an important role in minimizing resistance difference for the phase-change memory cell element arrays.

We investigate the interface phonon assisted transition in GaAs/AlGaAs quantum cascade lasers (QCLs) by using the transfer matrix method based on the dielectric continuum model. Electron eigenvalues and eigenstates are calculated by solving Schrodinger equation and the Poisson equation self-consistently. The AlAs-like and upper GaAs-like interface phonon modes contribute most of the scattering rate. Interface phonon modes couple strongly with electrons at E2, and the magnitude of scattering rate between E2 and E1 is much larger than that between E3 and E1, which is helpful for the laser inversion between E3 and E2. The calculation can be easily applied to the design and simulation of QCLs.

One-dimensional quasicrystal structures composed of III-V semiconductor GaAs/AlGaAs multilayers in deterministic Thue–Morse (TM) sequences have been grown by using gas-source molecular beam epitaxy to investigate both the structural and the photonic bandgap properties. The x-ray measurements show that this aperiodic system exhibits obvious periodic spatial correlations, from which the precise thickness of the constitutive layers could be determined. Transmission and reflection measurements experimentally demonstrated plenty of photonic bandgaps with traditional or fractal features existing in those quasicrystal structures, which are in good agreement with the transfer matrix simulations. The diversity of this TM system makes it a good candidate for photonic device applications.

Ag-doped Ge2Sb2Te5 films were deposited by rf magnetron sputtering on SiO2/Si substrates. The content of Ag ranging from 4.5 to 11.3 at.% is determined by inductively coupled plasma atomic emission spectrometry. The crystallization temperature of Ag-doped Ge2Sb2Te5 increases with the increasing Ag content and the stability of phase change film is improved greatly. Structures were measured by x-ray diffraction and the face-centered-cubic structure was more stable after Ag doping. Four-point probe was used to measure the sheet resistance of Ag-doped Ge2Sb2Te5 films annealed at different temperatures and it is indicated that Ag atoms increase the sheet resistance of Ge2Sb2Te5 thin film when the annealing temperature is higher than about 360 degrees C, which is beneficial for reducing the reset current. Current-voltage curves were tested and it is demonstrated that 4.5 at.% Ag doping into the Ge2Sb2Te5 film can reduce the threshold current from 1.46 mA to 0.25 mA and can only increase the threshold voltage slightly, which is very useful for low energy consumption.

A single nano-cell-element of chalcogenide-random access memory was fabricated by using the focused ion beam method. The minimum contact size between the Ge2Sb2Te5 phase change film and the top electrode film for the cell element is with diameter of 60 nm. The reversible phase transition between the RESET state and the SET state was successively realized. The minimum SET current is obtained to be about 0.28 mA.

Many kinds of Tang Sancai specimens were excavated in the Shaanxi and Henan Provinces. However, the provenances of some kinds of Tang Sancai have not been well identified until now. In order to group the Tang Sancai specimens of the unknown provenance to the respective kilns according to their chemical compositions, we studied the element abundance patterns of different kiln's Tang Sancai samples by Instrumental Neutron Activation Analysis (INAA). Our experimental results indicate that the differences of the element abundance pattern of the studied specimens from different kilns are significant. The separation is clear on the basis of factor analysis mainly using the contents of 13 elements, i.e. Ce, Nd, Eu, Yb, Lu, Ta, Th, Sc, Cs, La, Sm, U and Tb. The composition database of the Tang Sancai body samples from different kilns has been set up and can be used for the identification of the unknown Tang Sancai samples. The result also implies that similar raw materials have been used for Tang Sancai production at different kilns and the technical exchange between those kilns during the period of Tang Dynasty.

Ge2Sb2Te5 film was deposited by RF magnetron sputtering on Si (100) substrate. The structure of amorphous and crystalline Ge2Sb2Te5 thin films was investigated using XRD, Raman spectra and XPS. XRD measurements revealed the existence of two different crystalline phases, which has a FCC structure and a hexagonal structure, respectively. The broad peak in the Raman spectra of amorphous Ge2Sb2Te5 film is due to the amorphous –Te–Te– stretching. As the annealing temperature increases, the broad peak separates into two peaks, which indicates that the heteropolar bond in GeTe4 and the Sb–Sb bond are connected with four Te atoms and other units such as (TeSb) Sb–Sb (Te2) and (Sb2) Sb–Sb (Te2), where some of the four Te atoms in the above formula are replaced by Sb atoms, remain in crystalline Ge2Sb2Te5 thin film. And from the results of Raman spectra and XPS, higher the annealing temperature, more Te atoms bond to Ge atoms and more Sb atoms substitute Te in (Te2) Sb–Sb (Te2).

We investigate various methods for the calculation of the electron energy in semiconductor quantum wells and focus on a matrix algorithm method. The results show better fitness of the factor than that of in the first part of the Schrodinger equation. The effect of nonparabolicity in the conduction band is also discussed.

In this paper, Ag11In12Te26Sb51 phase change semiconductor films have been prepared by dc sputtering. The crystallization behaviour of amorphous Ag11In12Te26Sb51 thin films was investigated by using differential scanning calorimetry and x-ray diffraction. It was found that the crystallization temperature is about 483K and the melting temperature is 754.8K and the activation energy for crystallization, Ea, is 2.07eV. The crystalline Ag11In12Te26Sb51 films were obtained using initializer. The initialization conditions have a great effect on the sheet resistance of Ag11In12Te26Sb51 films. We found that the effect of the initialization condition on the sheet resistance can be ascribed to the crystallinity of Ag11In12Te26Sb51 films. The sheet resistance of the amorphous (Ramo) film is found to be larger than 1×106Ω and that of the crystalline (Rcry) film lies in the range from about 103 to 104Ω. So we have the ratio Ramo/Rcry=102~103, which is sufficiently large for application in memory devices.

The effect of annealing temperature on crystallization of amorphous Ge2Sb2Te5 films with thickness of 40 nm is studied by TEM and AFM methods. The relationship between microstructure and resistivity of the Ge2Sb2Te5 film is investigated. From the TEM measurements, the grain size of crystallites increases gradually as the annealing temperature increases. When the annealing temperature is too high, voids are formed, which may originate from evaporation of the Ge2Sb2Te5 film at the elevated temperatures, formation of sink, being nucleated by residual vacancies, and surface roughness. The resistivity of the Ge2Sb2Te5 film decreases with the increasing annealing temperature and has slight changes when the temperature is higher than 400 degrees C. Phase transitions and scattering of crystallite boundaries may be the major factors affecting the resistivity of the Ge2Sb2Te5 film.

We study the electronic energy levels and probability distribution of vertically stacked self-assembled InAs quantum discs system in the presence of a vertically applied electric field. This field is found to increase the splitting between the symmetric and antisymmetric levels for the same angular momentum. The field along the direction from one disc to another affects the electronic energy levels similarly as that in the opposite direction because the two discs are identical. It is obvious from our calculation that the probability of finding an electron in one disc becomes larger when the field points from this disc to the other one.

We study the oscillator strengths of the optical transitions of the vertically stacked self-assembled InAs quantum discs. The oscillator strengths change evidently when the two quantum discs are far apart from each other. A vertically applied electric held affects the oscillator strengths severely, while the oscillator strengths change slowly as the radius of one disc increases. We also studied the excitonic energy of the system, including the Coulomb interaction. The excitonic energy increases with the increasing radius of one disc, but decreases as a vertically applied electric field increases.

With the help of the effective refractive index method we have numerically analyzed a multilayer planar waveguide structure and calculated the propagation constants, confinement factors, and transverse electric (TE) modes. A five-layer waveguide model has been provided to analyze the electro-magnetic wave propagation process. The analysis method has been applied to the 980 nm laser with active layer of GaInAs/GaInAsP strained quantum wells, GaInAsP confinement layers and GaInP cap layers. By changing the thickness of confinement layers, we obtained confinement factor as high as 95% with higher TE modes TE1 and TE2. The results are in good agreement with the experiment by A. Al-Muhanna et al. and give the new idea to enhance output power of semiconductor lasers. The analysis method can also be extended to any other slab multilayer waveguide structures, and the results are useful to the fabrication of optic-electronic devices.

Atomic hydrogen assisted molecular beam epitaxy (MBE) is a novel type of epitaxial growth of nanostructures. The GaAs (311)A surface naturally forms one-dimensional step arrays by step bunching along the direction of (-233) and the space period is around 40nm. The step arrays extend over several mum without displacement. The InGaAs quantum wire arrays are grown on the step arrays as the basis. Our results may prompt further development of more uniform quantum wire and quantum dot arrays.

We have investigated the temperature dependence of the photoluminescence (PL) spectrum of self-organized InAs/GaAs quantum dots. A distinctive double-peak feature of the PL spectra from quantum dots has been observed, and a bimodal distribution of dot sizes has also been confirmed by scanning tunneling microscopy image for uncapped sample. The power-dependent PL study demonstrates that the distinctive PL emission peaks are associated with the ground-state emission of islands in different size branches. The temperature-dependent PL study shows that the PL quenching temperature for different dot families is different. Due to lacking of the couple between quantum dots, an unusual temperature dependence of the linewidth and peak energy of the dot ensemble photoluminescence has not been observed. In addition, we have tuned the emission wavelength of InAs QDs to 1.3 mu m at room temperature.

Low-temperature photoluminescence studies have been performed on Si-doped and Be-doped self-organized InAs/GaAs quantum dot (QD) samples to investigate the effect of doping. When Si or Be is doped into the sample, a remarkable decrease in line-width is observed. We relate this phenomenon to a model that takes the Si or Be atoms as the nucleation centers for the formation of QDs. When Si or Be is doped, more small uniform quantum dots are formed. The result will be of significance for the application of self-organized InAs quantum dots in semiconductor devices.

In situ ultra high vacuum scanning probe microscopy (SPM) and low-temperature :photoluminescence (PL) studies have been performed on Si-doped self-organized InAs/GaAs quantum dots samples to investigate the Si doping effects. Remarkably, when Si is doped in the sample, according to the SPM images, more small dots are formed when compared with images from undoped samples. On the PL spectra, high-energy band tail which correspond to the small dots appear, with increasing doping concentration, the integral intensity of the high-energy band tail account for the whole peak increase too. We relate this phenomenon to a model that takes the Si atom as the nucleation center for QDs formation. (C) 1999 Elsevier Science B.V. All rights reserved.

Si16Sb84-based line cell phase change random access memory (PCRAM), in which the Si16Sb84 phase change line is contacted by TiN electrodes with a nanoscale gap, is fabricated by electron beam lithography The lowest current and measured pulse width for RESET operation are 115 μA and 18 ns, respectively The measured shortest pulse width for recrystallization is 110ns, with applied pulse amplitude of 1.5 V. SET and RESET currents for line cells with different line lengths are determined. Endurance of 106 cycles with a resistance ratio of above 800 has been achieved.

In order to improve the reliability of C-RAM devices, a seamless sub-micro W heating electrode in diameter 260 nm is fabricated with standard 0.18 μm CMOS processing line. Then we successfully manufacture a chalcogenide random access memory device using this seamless sub-micro W heating electrode. The results show good electrical performance, e.g. the reset current of 1.3 mA and the set/reset cycle up to 109 have been achieved.

In order to improve nano-scale phase change memory performance, a super-clean interface should be obtained after chemical mechanical polishing (CMP) of Ge2Sb2Te5 phase change films. We use reactive ion etching (RIE) as the cleaning method. The cleaning effect is analysed by scanning electron microscopy and an energy dispersive spectrometer. The results show that particle residue on the surface has been removed. Meanwhile, Ge2Sb2Te5 material stoichiometric content ratios are unchanged. After the top electrode is deposited, current-voltage characteristics test demonstrates that the set threshold voltage is reduced from 13 V to 2.7V and the threshold current from 0.1mA to 0.025mA. Furthermore, we analyse the RIE cleaning principle and compare it with the ultrasonic method.

We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact (W-BEC) array. The W-BEC in diameter 260?nm is fabricated by a 0.18??m CMOS technology, and the TiOx/TiNx cell array is formed by rf magnetron sputtering and reactive ion etching. In current?voltage (I?V) measurement for current-sweeping mode, large snap-back of voltage is observed, which indicates that the sample changes from high-resistance state (HRS) to low-resistance state (LRS). In the I?V measurement for voltage-sweeping mode, large current collapse is observed, which indicates that the sample changes from LRS to HRS. The current difference between HRS and LRS is about two orders. The threshold current and voltage for the resistance change is about 5.0?10?5?A and 2.5?V, respectively. The pulse voltage can also change the resistance and the pulse time is as shorter as 30?ns for the resistance change. These properties of TiOx/TiNx film are comparable to that of conventional phase-change material, which makes it possible for RRAM application.

Ge1Sb2Te4-based chalcogenide random access memory array, with a tungsten heating electrode of 260 nm in diameter, is fabricated by 0.18-μm CMOS technology. Electrical performance of the device, as well as physical and electrical properties of Ge1Sb2Te4 thin film, is characterized. SET and RESET programming currents are 1.6 and 4.1 mA, respectively, when pulse width is 100 ns. Both the values are larger than those of the Ge2Sb2Te5-based ones with the same structure and contact size. Endurance up to 106 cycles with a resistance ratio of about 100 has been achieved.

In order to reduce the reset current of chalcogenide random access memory, a W sub-microtube heater electrode with outer/inner diameter of 260/100 nm, which was fabricated with standard 0.18-μm technology, is proposed for the first time to achieve a reset current of about 0.5 mA. The reasons may be that sub-microtube increases the number of electrode edge and thermal efficiency is improved greatly because the thermal density on the edge of sub-microtube electrode is generally the highest.