130 results on '"Feng, M. S."'
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2. Semi-insulating iron-doped indium phosphide grown by low-pressure metal-organic chemical vapour deposition
3. Organofluorosilicate Glass (OFSG): A Dense Low K Dielectric with Superior Materials Properties
4. Investigation of N2 Plasma Effects on the Density Profile of Hydrogen Silsesquioxane Thin Films
5. GENETIC POLYMORPHISMS IN THE 5’-FLANKING REGION OF THE MELANOCORTIN 1 RECEPTOR (MC1R) GENE IN FOXES, "Генетика"
6. Effects of pressure on the formation of phosphorus-doped microcrystalline silicon films deposited by radio-frequency glow discharge.
7. Low-temperature luminescent properties of degenerate p-type GaAs grown by low-pressure metalorganic chemical vapor deposition.
8. In0.49Ga0.51P/GaAs heterostructures grown by low-pressure metalorganic chemical vapor deposition.
9. Growth and characterizations of GaN on SiC substrates with buffer layers.
10. Schottky contact and the thermal stability of Ni on n-type GaN.
11. Cathodoluminescent characteristics of ZnGa2O4 phosphor grown by radio frequency magnetron sputtering.
12. Carbon incorporation during growth of GaAs by TEGa-AsH3 base low-pressure metalorganic chemical vapor deposition.
13. Damaged and damage-free hydrogenation of GaAs: The effect of reactor geometry.
14. Anomalous mobility enhancement in heavily carbon-doped GaAs.
15. Energy, amino acid, and phosphorus digestibility of phytase transgenic corn for growing pigs1
16. ChemInform Abstract: Growth of ZnGa2O4 Phosphor by Radio Frequency Magnetron Sputtering.
17. Effect of Surface Passivation Removal on Planarization Efficiency in Cu Abrasive-Free Polishing
18. Study on Pressure–Independent Cu Removal in Cu Abrasive–Free Polishing
19. Pattern Effect Optimized with Non-Native Surface Passivation in Copper Abrasive-Free Polishing
20. A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy
21. Electrochemically Deposited Pd-Induced Crystallization of Parallel Needlelike Polycrystalline Silicon from Prepatterned Amorphous Silicon Thin Films
22. Organofluorosilicate Glass (OFSG): A Dense Low K Dielectric with Superior Materials Properties.
23. X-Ray Reflectivity and FTIR Measurements of N[sub 2] Plasma Effects on the Density Profile of Hydrogen Silsesquioxane Thin Films
24. Investigation of N2 Plasma Effects on the Density Profile of Hydrogen Silsesquioxane Thin Films.
25. Investigation of N[sub 2] plasma effects on the depth profile of hydrogen silsesquioxane thin films using high resolution specular X-ray reflectivity.
26. Improved contact performance of GaN film using Si diffusion
27. The Novel Improvement of Low Dielectric Constant Methylsilsesquioxane by N 2 O Plasma Treatment
28. Impact of plasma-enhanced chemical vapor deposited oxide characteristics on interconnect via resistance and device performance of four-transistor static random access memory with polysilicon load resistors
29. A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical–mechanical planarization
30. Optimization of Multilayer Thin Film Passivation Processes for Improving Cache Memory Device Performance
31. Deposition temperature effects of high density plasma chemical vapor deposition films for subquarter micron devices application
32. A modified multi-chemicals spray cleaning process for post-CMP cleaning application
33. The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detection
34. Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology
35. Yellow luminescence inn-type GaN epitaxial films
36. Persistent photoconductivity in n-type GaN
37. Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures
38. Schottky contact and the thermal stability of Ni onn‐type GaN
39. The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
40. X‐ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers
41. A bilayer Ti/Ag ohmic contact for highly doped n‐type GaN films
42. Observation of a Two-Dimensional Electron Gas in the AlGaN/GaN on SiC Substrates
43. Investigation of the Indium Atom Interdiffusion on the Growth of the InGaN/GaN Heterostructure
44. Material Characterization and Chemical-Mechanical Polishing of Low-Dielectric Constant Fluorinated Silicon Dioxide Films
45. Study of Schottky barriers on n‐type GaN grown by low‐pressure metalorganic chemical vapor deposition
46. Se-doped GaN Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
47. Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy
48. Characterization of plasma passivation process for poly-Si thin film transistors (TFTs)
49. Cathodoluminescent characteristics of ZnGa2O4phosphor grown by radio frequency magnetron sputtering
50. Growth of ZnGa2 O 4 Phosphor by Radio Frequency Magnetron Sputtering
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