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The refractive index is measured for PbEuTe alloys in the 3.3-12-microm spectral region. Each alloy is grown with a different Eu concentration. The range of Eu concentrations studied is between 0.76 and 6.5 at %. All measurements are performed on samples maintained at room temperature. We use a classical dispersion relation to establish a simple empirical relationship that describes the dependence of the refractive index as a function of both the percentage of the Eu concentration and the infrared wave number.

Deals with a study of minority-carrier diffusion length of a highly gallium-doped lead[sub0.78] tin[sub0.22] tellurium liquid-phase epitaxy grown layer which was measured between 10-80 K using a light spot scanning technique on a beveled diode. Experimental results and discussion.

Lattice-matched double-heterostructure (DH) PbEuSeTe lasers were grown by molecular beam epitaxy (MBE) on (100) oriented PbTe substrates. Grooved mesa structures with 17–25 μm wide stripes and 0.75 μm thick Pb1-xEuxSeyTe1-y active layers with 0≤x≤0.031 were fabricated. DH diode lasers with a PbTe active layer reached a maximum cw operation temperature of 175 K which equals the highest operation temperature achieved so far by a side optical cavity (SOC) single quantum well (SQW) PbTe/PbEuSeTe laser. The threshold current density of 3.9 A/cm2 measured for this laser at 15 K is, to our knowledge, the lowest ever published for lead salt lasers. Comparison of MBE-grown DH lasers which utilize the lattice-matched PbTe/PbEuSeTe system to those utilizing the nonlattice-matched PbSe/PbEuSe system shows higher operation temperatures and by far lower threshold currents for the lattice-matched system. [ABSTRACT FROM AUTHOR]