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303 results on '"Fedeli, Jean-Marc"'

1. Comparison of GST and Sb2S3 Phase Change Materials for Reconfigurable Integrated Mid-Infrared Supercontinuum Sources

Author

Perestjuk, Marko, primary, Biegański, Adam, additional, Chalak, Anas, additional, Armand, Rémi, additional, Torre, Alberto Della, additional, Cueff, Sébastien, additional, Mitchell, Arnan, additional, Boes, Andreas, additional, Hartmann, Jean-Michel, additional, Fedeli, Jean-Marc, additional, Reboud, Vincent, additional, Brianceau, Pierre, additional, Monat, Christelle, additional, and Grillet, Christian, additional

Published
2024
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2. Sub-Volt Silicon-Organic Electrooptic Modulator

Author

Ding, Ran, Baehr-Jones, Tom, Kim, Woo-Joong, Spott, Alexander, Fedeli, Jean-Marc, Huang, Su, Luo, Jingdong, Jen, Alex K. -Y., Dalton, Larry, and Hochberg, Michael

Subjects
Physics - Optics
Abstract

Lowering the operating voltage of electrooptic modulators is desirable for a variety of applications, most notably in analog photonics , and digital data communications . In particular for digital systems such as CPUs, it is desirable to develop modulators that are both temperature-insensitive and compatible with typically sub-2V CMOS electronics ; however, drive voltages in silicon-based MZIs currently exceed 6.5V . Here we show an MZI modulator based on an electrooptic polymer-clad silicon slot waveguide, with a halfwave voltage of only 0.69V, and a bandwidth of 500 MHz. We also show that there are also paths to significantly improve both the bandwidth and drive voltage . Our silicon-organic modulator has an intrinsic power consumption less than 0.66 pJ/bit, nearly an order of magnitude improvement over the previous lowest energy silicon MZI ., Comment: Under consideration at Nature Photonics

Published
2010
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3. Wavelength-scale stationary-wave integrated Fourier-transform spectrometry

Author

Coarer, Etienne Le, Blaize, Sylvain, Benech, Pierre, Stefanon, Ilan, Morand, Alain, Lérondel, Gilles, Leblond, Grégory, Kern, Pierre, Fedeli, Jean Marc, and Royer, Pascal

Subjects
Physics - Optics
Abstract

Spectrometry is a general physical-analysis approach for investigating light-matter interactions. However, the complex designs of existing spectrometers render them resistant to simplification and miniaturization, both of which are vital for applications in micro- and nanotechnology and which are now undergoing intensive research. Stationary-wave integrated Fourier-transform spectrometry (SWIFTS)-an approach based on direct intensity detection of a standing wave resulting from either reflection (as in the principle of colour photography by Gabriel Lippmann) or counterpropagative interference phenomenon-is expected to be able to overcome this drawback. Here, we present a SWIFTS-based spectrometer relying on an original optical near-field detection method in which optical nanoprobes are used to sample directly the evanescent standing wave in the waveguide. Combined with integrated optics, we report a way of reducing the volume of the spectrometer to a few hundreds of cubic wavelengths. This is the first attempt, using SWIFTS, to produce a very small integrated one-dimensional spectrometer suitable for applications where microspectrometers are essential.

Published
2007
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4. Mid-infrared integrated silicon–germanium ring resonator with high Q-factor

Author

Armand, Rémi, primary, Perestjuk, Marko, additional, Della Torre, Alberto, additional, Sinobad, Milan, additional, Mitchell, Arnan, additional, Boes, Andreas, additional, Hartmann, Jean-Michel, additional, Fedeli, Jean-Marc, additional, Reboud, Vincent, additional, Brianceau, Pierre, additional, De Rossi, Alfredo, additional, Combrié, Sylvain, additional, Monat, Christelle, additional, and Grillet, Christian, additional

Published
2023
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6. Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED

Author

Benedikovic Daniel, Virot Leopold, Aubin Guy, Hartmann Jean-Michel, Amar Farah, Le Roux Xavier, Alonso-Ramos Carlos, Dado Milan, Cassan Eric, Marris-Morini Delphine, Fedeli Jean-Marc, Boeuf Frederic, Szelag Bertrand, and Vivien Laurent

Subjects
Physics, QC1-999
Abstract

Optical photodetectors are at the forefront of photonic research since the rise of integrated optics. Photodetectors are fundamental building blocks for chip-scale optoelectronics, enabling conversion of light into an electrical signal. Such devices play a key role in many surging applications from communication and computation to sensing, biomedicine and health monitoring, to name a few. However, chip integration of optical photodetectors with improved performances is an on-going challenge for mainstream optical communications at near-infrared wavelengths. Here, we present recent advances in heterostructured silicon-germanium-silicon p-i-n photodetectors, enabling high-speed detection on a foundry-compatible monolithic platform.

Published
2021
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7. Mid-infrared supercontinuum generation in a varying dispersion waveguide for multi-species gas spectroscopy

Author

Torre, Alberto Della, primary, Armand, Remi, additional, Sinobad, Milan, additional, Fiaboe, Kokou Firmin, additional, Luther-Davies, Barry, additional, Madden, Stephen, additional, Mitchell, Arnan, additional, Nguyen, Thach, additional, Moss, David J., additional, Hartmann, Jean-Michel, additional, Reboud, Vincent, additional, Fedeli, Jean-Marc, additional, Monat, Christelle, additional, and Grillet, Christian, additional

Published
2023
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8. High-Q silicon-germanium ring resonator for on-chip sensing applications in the mid-infrared

Author

Perestjuk, Marko, Armand, Rémi, Della Torre, Alberto, Sinobad, Milan, Mitchell, Arnan, Boes, Andreas, Hartmann, Jean-Michel, Fedeli, Jean-Marc, Reboud, Vincent, Monat, Christelle, Grillet, Christian, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Royal Melbourne Institute of Technology University (RMIT University), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), and European Project: ECLAUSion

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Abstract

Photonic Integrated Sensors (EM1D); International audience; We report a high-Q ring resonator in a silicon-germanium on silicon chip-based platform for sensing applications in the mid-infrared. The side-coupled ring exhibits a loaded Q-factor of 90,000 at the operating wavelength around 4.18 µm

Published
2022

9. Résonateur en anneau en silicium-germanium à fort facteur de qualité dans le moyen infrarouge

Author

Perestjuk, Marko, Armand, Rémi, Della Torre, Alberto, Sinobad, Milan, Mitchell, Arnan, Boes, Andreas, Hartmann, Jean-Michel, Fedeli, Jean-Marc, Reboud, Vincent, Monat, Christelle, Grillet, Christian, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Royal Melbourne Institute of Technology University (RMIT University), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), SFO, ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), and European Project: ECLAUSion

Subjects
Silicium-Germanium, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Moyen Infrarouge, Cavités, Résonateurs en anneaux
Abstract

International audience; Nous démontrons un résonateur en anneau à fort facteur de qualité dans le moyen infrarouge sur plateforme intégrée de silicium-germanium sur silicium. Le résonateur couplé par un guide d'accès présente un facteur de qualité totale de 90 000 autour de 4,18 µm.

Published
2022

10. Mid-Infrared High Q Factor Silicon-Germanium Ring Resonator

Author

Perestjuk, Marko, Armand, Rémi, Della Torre, Alberto, Sinobad, Milan, Mitchell, Arnan, Boes, Andreas, Hartmann, Jean- Michel, Fedeli, Jean-Marc, Reboud, Vincent, Monat, Christelle, Grillet, Christian, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Royal Melbourne Institute of Technology University (RMIT University), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Silicon Germanium, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Ring Resonators, Cavities, Mid-infrared
Abstract

International audience; We demonstrate a ring resonator with high Q-factor in the mid-infrared in a silicongermanium on silicon chip-based platform. The side-coupled ring exhibits a loaded Q-factor of 90,000 at the operating wavelength around 4.18 µm. This is the highest Q-factor achieved on this material platform.

Published
2022

11. Mid-Infrared Supercontinuum Generation in a Tapered SiGe/Si Waveguide for Multi-Species Gas Spectroscopy

Author

Della Torre, Alberto, Armand, Remi, Sinobad, Milan, Fiaboe, Kokou, Luther-Davies, Barry, Madden, Stephen, Mitchell, Arnan, Nguyen, Thach, Moss, David, Hartmann, Jean Michel, Reboud, Vincent, Fedeli, Jean-Marc, Monat, Christelle, Grillet, Christian, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Royal Melbourne Institute of Technology University (RMIT University), Australian National University (ANU), Swinburne University of Technology [Melbourne], Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), INL - Nanophotonique (INL - Photonique), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), and European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015)

Subjects
[PHYS]Physics [physics], Nonlinear optics, Supercontinuum, Mid-infrared, Spectroscopy
Abstract

International audience; We report the experimental generation of a broadband and flat mid-infrared supercontinuum in a silicon-germanium-on-silicon inverse tapered waveguide. The supercontinuum extends from 2.4 to 5.5 µm, only limited by the long wavelength detection limit of our spectrum analyzer. We exploit the enhanced flatness of our supercontinuum for a proof-of-principle demonstration of gas spectroscopy of water vapor and carbon dioxide.

Published
2022

12. Silicon-Germanium Avalanche Receivers With fJ/bit Energy Consumption

Author

Benedikovic, Daniel, primary, Virot, Leopold, additional, Aubin, Guy, additional, Hartmann, Jean-Michel, additional, Amar, Farah, additional, Roux, Xavier Le, additional, Alonso-Ramos, Carlos, additional, Cassan, Earic, additional, Marris-Morini, Delphine, additional, Boeuf, Frederic, additional, Fedeli, Jean-Marc, additional, Szelag, Bertrand, additional, and Vivien, Laurent, additional

Published
2022
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13. High-Q Silicon-Germanium On-Chip Ring Resonator in the Mid-Infrared

Author

Armand, Rémi, Perestjuk, Marko, Della Torre, Alberto, Sinobad, Milan, Mitchell, Arnan, Boes, Andreas, Hartmann, Jean-Michel, Fedeli, Jean-Marc, Reboud, Vincent, Monat, Christelle, Grillet, Christian, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Royal Melbourne Institute of Technology University (RMIT University), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), and European Project: ECLAUSion

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Abstract

International audience; We report a high-Q ring resonator in the mid-infrared in a silicon-germanium on silicon chip-based platform. The side-coupled ring exhibits a loaded Q-factor of 90,000 at the operating wavelength around 4.18 µm.

Published
2022

14. Broadband and Flat Mid-Infrared Supercontinuum Generation in a Varying Dispersion Waveguide for Parallel Gas Spectroscopy

Author

Della Torre, Alberto, Armand, Rémi, Sinobad, Milan, Fiaboe, Kokou Firmin, Luther-Davies, Barry, Madden, Stephen, Mitchell, Arnan, Nguyen, Thach, Moss, David, Hartmann, Jean-Michel, Reboud, Vincent, Fedeli, Jean-Marc, Monat, Christelle, Grillet, Christian, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Royal Melbourne Institute of Technology University (RMIT University), Australian National University (ANU), Swinburne University of Technology [Melbourne], Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), and European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015)

Subjects
[PHYS]Physics [physics]
Abstract

Conference on Lasers and Electro-Optics Part of CLEO: 2022 15–20 May 2022, San Jose, California, United StatesSession: Integrated Nonlinear Photonics I (SM4K); International audience; We report optimized mid-infrared supercontinuum generation in a silicon-germanium on silicon waveguide with varying dispersion. We employ the generated supercontinuum for a proof-of-principle demonstration of free-space parallel gas spectroscopy.

Published
2022

18. Broadband and Flat Mid-Infrared Supercontinuum Generation in a Varying Dispersion Waveguide for Parallel Gas Spectroscopy

Author

Torre, Alberto Della, primary, Armand, Rémi, additional, Sinobad, Milan, additional, Fiaboe, Kokou Firmin, additional, Luther-Davies, Barry, additional, Madden, Stephen, additional, Mitchell, Arnan, additional, Nguyen, Thach, additional, Moss, David J., additional, Hartmann, Jean-Michel, additional, Reboud, Vincent, additional, Fedeli, Jean-Marc, additional, Monat, Christelle, additional, and Grillet, Christian, additional

Published
2022
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19. Low FSR Mode-Locked Laser Based on InP-Si3N4 Hybrid Integration

Author

Ibrahimi, Yasmine, primary, Boust, Sylvain, additional, Wilmart, Quentin, additional, Paret, Jean-Francois, additional, Garreau, Alexandre, additional, Mekhazni, Karim, additional, Fortin, Catherine, additional, Duport, Francois, additional, Fedeli, Jean-Marc, additional, Sciancalepore, Corrado, additional, Garcia, Stephanie, additional, and van Dijk, Frederic, additional

Published
2021
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20. Silicon-Germanium Heterojunction Photodetectors for On-Chip Optoelectronics and Communications

Author

Benedikovic, Daniel, primary, Virot, Leopold, additional, Aubin, Guy, additional, Hartmann, Jean-Michel, additional, Amar, Farah, additional, Le Roux, Xavier, additional, Alonso-Ramos, Carlos, additional, Marris-Morini, Delphine, additional, Cassan, Eric, additional, Boeuf, Frederic, additional, Fedeli, Jean-Marc, additional, Szelag, Bertrand, additional, and Vivien, Laurent, additional

Published
2021
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21. Mid-Infrared Supercontinuum Generation in Germanium Waveguides

Author

Torre, Alberto Della, primary, Sinobad, Milan, additional, Armand, Remi, additional, Luther-Davies, Barry, additional, Ma, Pan, additional, Madden, Stephen, additional, Moss, David J., additional, Mitchell, Arnan, additional, Hartmann, Jean-Michel, additional, Reboud, Vincent, additional, Fedeli, Jean-Marc, additional, Monat, Christelle, additional, and Grillet, Christian, additional

Published
2021
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23. High-speed germanium p-i-n avalanche photodetectors on silicon

Author

Benedikovic, Daniel, primary, Virot, Leopold, additional, Aubin, Guy, additional, Hartmann, Jean-Michel, additional, Amar, Farah, additional, Szelag, Bertrand, additional, Le Roux, Xavier, additional, Alonso-Ramos, Carlos, additional, Crozat, Paul, additional, Cassan, Eric, additional, Boeuf, Frederic, additional, Fedeli, Jean-Marc, additional, Kopp, Christophe, additional, and Vivien, Laurent, additional

Published
2021
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24. Octave-spanning mid-infrared supercontinuum generation in all-normal dispersion silicon germanium waveguide

Author

Sinobad, Milan, primary, Della Torre, Alberto, additional, Armand, Remi, additional, Luther-Davies, Barry, additional, Ma, Pan, additional, Madden, Stephen, additional, Mitchell, Arnan, additional, Moss, David J., additional, Hartmann, Jean-Michel, additional, Fedeli, Jean-Marc, additional, Monat, Christelle, additional, and Grillet, Christian, additional

Published
2021
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25. Dispersion Trimming for Mid-Infrared Supercontinuum Generation in Silicon-Germanium on Silicon Waveguides

Author

Della Torre, Alberto, Sinobad, Milan, Armand, Rémi, Luther-Davies, Barry, Ma, Pan, Madden, Stephen, Debbarma, Sukanta, Vu, Khu, Moss, David, Mitchell, Arnan, Hartmann, Jean-Michel, Fedeli, Jean- Marc, Monat, Christelle, Grillet, Christian, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), GRAPHICS 648546, ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), and European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015)

Subjects
[PHYS]Physics [physics], integrated optics, nonlinear optics, mid-infrared, Supercontinuum generation, dispersion trimming
Abstract

International audience; We report octave spanning mid-infrared supercontinuum generation in a highly nonlinear silicon germaniumon-silicon ridge waveguide. We show that, by adding a chalcogenide cladding, it is possible to trim a posteriori the waveguide's dispersion profile which, in turn, governs the properties of the generated supercontinuum. In particular, we experimentally show that a shift from anomalous to normal dispersion takes place when a 1.26 μm thick cladding layer of Ge11.5As24Se64.5 is added. Finally, we show that the group velocity dispersion of the waveguide can be precisely controlled by changing the thickness of the cladding layer. This demonstrates that the heterogeneous integration of materials can be used as a post-processing technique to precisely control the supercontinuum properties.

Published
2020

26. High Coherence at f and 2 f of Mid-Infrared Supercontinuum Generation in Silicon Germanium Waveguides

Author

SINOBAD, Milan, Torre, Alberto Della, Armand, Remi, Luther-Davies, Barry, Ma, Pan, Madden, Stephen, Mitchell, Arnan, Moss, David, Hartmann, Jean-Michel, Fedeli, Jean-Marc, Monat, Christelle, GRILLET, Christian, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Australian National University (ANU), Shandong Academy of Agricultural Sciences, Jinan, Royal Melbourne Institute of Technology University (RMIT University), Laboratoire Interuniversitaire des Systèmes Atmosphériques (LISA (UMR_7583)), Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Institut national des sciences de l'Univers (INSU - CNRS)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Swinburne University of Technology [Melbourne], ERC H2020, ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Centrale de Lyon (ECL), and Université de Lyon

Subjects
[SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2020

27. Downsizing and Silicon Integration of Photoacoustic Gas Cells

Author

Gliere, Alain, Barritault, Pierre, Berthelot, Audrey, Constancias, Christophe, Coutard, Jean-guillaume, Deslosges, Brigitte, Durrafourg, Laurent, Fedeli, Jean-marc, Garcia, Marine, Lartigue, Olivier, Lhermet, Hélène, Marchant, Adrien, Rouxel, Justin, Skubich, Jules, Teulle, Alexandre, Verdot, Thierry, Nicoletti, Sergio, Gliere, Alain, Barritault, Pierre, Berthelot, Audrey, Constancias, Christophe, Coutard, Jean-guillaume, Deslosges, Brigitte, Durrafourg, Laurent, Fedeli, Jean-marc, Garcia, Marine, Lartigue, Olivier, Lhermet, Hélène, Marchant, Adrien, Rouxel, Justin, Skubich, Jules, Teulle, Alexandre, Verdot, Thierry, and Nicoletti, Sergio

Abstract

Downsizing and compatibility with MEMS silicon foundries is an attractive path towards a large diffusion of photoacoustic trace gas sensors. As the photoacoustic signal scales inversely with the chamber volume, a trend to miniaturization has been followed by several teams. We review in this article the approach initiated several years ago in our laboratory. Three generations of components, namely a 40 mm3 3D-printed cell, a 3.7 mm3 silicon cell, and a 2.3 mm3 silicon cell with a built-in piezoresistive pressure sensor, have been designed. The models used take into account the viscous and thermal losses, which cannot be neglected for such small-sized resonators. The components have been fabricated either by additive manufacturing or microfabrication and characterized. Based on a compilation of experimental data, a similar sub-ppm limit of detection is demonstrated. All three versions of photoacoustic cells have their own domain of operation as each one has benefits and drawbacks, regarding fabrication, implementation, and ease of use.

Published
2020
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29. Mid-infrared supercontinuum generation in a low-loss germanium-on-silicon waveguide

Author

Della Torre, Alberto, primary, Sinobad, Milan, additional, Armand, Remi, additional, Luther-Davies, Barry, additional, Ma, Pan, additional, Madden, Stephen, additional, Mitchell, Arnan, additional, Moss, David J., additional, Hartmann, Jean-Michel, additional, Reboud, Vincent, additional, Fedeli, Jean-Marc, additional, Monat, Christelle, additional, and Grillet, Christian, additional

Published
2021
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30. Mid-infrared Octave-spanning Supercontinuum Generation in an All-normal Dispersion SiGe Waveguide

Author

Sinobad, Milan, primary, Torre, Alberto Della, additional, Armand, Remi, additional, Luther-Davies, Barry, additional, Ma, Pan, additional, Madden, Stephen, additional, Mitchell, Arnan, additional, Moss, David J., additional, Hartmann, Jean-Michel, additional, Fedeli, Jean-Marc, additional, Monat, Christelle, additional, and Grillet, Christian, additional

Published
2021
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31. Mid-Infrared Supercontinuum Generation in a Pure Germanium-on-Silicon Ridge Waveguide

Author

Torre, Alberto Della, primary, Sinobad, Milan, additional, Armand, Rémi, additional, Luther-Davies, Barry, additional, Ma, Pan, additional, Madden, Stephen, additional, Moss, David J., additional, Mitchell, Arnan, additional, Hartmann, Jean-Michel, additional, Reboud, Vincent, additional, Fedeli, Jean-Marc, additional, Monat, Christelle, additional, and Grillet, Christian, additional

Published
2021
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32. High speed all-silicon optical modulator

Author

Marris-Morini, Delphine, Le Roux, Xavier, Pascal, Daniel, Vivien, Laurent, Cassan, Eric, Fédéli, Jean Marc, Damlencourt, Jean François, Bouville, David, Palomo, José, and Laval, Suzanne

Published
2006
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33. Long cavity hybrid InP/SiN mode-locked lasers

Author

Ibrahimi, Yasmine, primary, Boust, Sylvain, additional, Wilmart, Quentin, additional, Paret, Jean-Francois, additional, Garreau, Alexandre, additional, Mekhazni, Karim, additional, Fortin, Catherine, additional, Duport, Francois, additional, Fedeli, Jean-Marc, additional, Sciancalepore, Corrado, additional, Garcia, Stephanie, additional, and van Dijk, Frederic, additional

Published
2020
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34. Mid-infrared supercontinuum generation in silicon-germanium all-normal dispersion waveguides

Author

Sinobad, Milan, primary, DellaTorre, Alberto, additional, Armand, Remi, additional, Luther-Davies, Barry, additional, Ma, Pan, additional, Madden, Stephen, additional, Mitchell, Arnan, additional, Moss, David J., additional, Hartmann, Jean-Michel, additional, Fedeli, Jean-Marc, additional, Monat, Christelle, additional, and Grillet, Christian, additional

Published
2020
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35. High Coherence at f and 2f of Mid-Infrared Supercontinuum Generation in Silicon Germanium Waveguides

Author

Sinobad, Milan, primary, Fedeli, Jean-Marc, additional, Monat, Christelle, additional, Grillet, Christian, additional, Torre, Alberto Della, additional, Armand, Remi, additional, Luther-Davies, Barry, additional, Ma, Pan, additional, Madden, Stephen, additional, Mitchell, Arnan, additional, Moss, David J., additional, and Hartmann, Jean-Michel, additional

Published
2020
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36. Comprehensive Study on Chip-Integrated Germanium Pin Photodetectors for Energy-Efficient Silicon Interconnects

Author

Benedikovic, Daniel, primary, Cassan, Eric, additional, Marris-Morini, Delphine, additional, Baudot, Charles, additional, Boeuf, Frederic, additional, Fedeli, Jean-Marc, additional, Kopp, Christophe, additional, Vivien, Laurent, additional, Virot, Leopold, additional, Aubin, Guy, additional, Hartmann, Jean-Michel, additional, Amar, Farah, additional, Szelag, Bertrand, additional, Le Roux, Xavier, additional, Alonso-Ramos, Carlos, additional, and Crozat, Paul, additional

Published
2020
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37. Coherent Mid-Infrared Supercontinuum Sources in SiliconGermanium Waveguides

Author

Torre, Alberto Della, primary, Sinobad, Milan, additional, Armand, Rémi, additional, Luther-Davis, Barry, additional, Ma, Pan, additional, Madden, Stephen, additional, Debbarma, Sukanta, additional, Vu, Khu, additional, Moss, David J., additional, Mitchell, Arnan, additional, Hartmann, Jean-Michel, additional, Fedeli, Jean-Marc, additional, Monat, Christelle, additional, and Grillet, Christian, additional

Published
2020
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38. Mid-Infrared Supercontinuum Generation in Germanium-on-Silicon Waveguides

Author

Torre, Alberto Della, primary, Sinobad, Milan, additional, Armand, Rémi, additional, Luther-Davies, Barry, additional, Ma, Pan, additional, Madden, Stephen, additional, Moss, David J., additional, Mitchell, Arnan, additional, Hartmann, Jean-Michel, additional, Reboud, Vincent, additional, Fedeli, Jean-Marc, additional, Monat, Christelle, additional, and Grillet, Christian, additional

Published
2020
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39. Low-noise mid-infrared supercontinuum generation in a silicon-based chip

Author

Sinobad, Milan, primary, Torre, Alberto Della, additional, Armand, Remi, additional, Luther-Davies, Barry, additional, Ma, Pan, additional, Madden, Stephen, additional, Mitchell, Arnan, additional, Moss, David J., additional, Hartmann, Jean-Michel, additional, Fedeli, Jean-Marc, additional, Monat, Christelle, additional, and Grillet, Christian, additional

Published
2020
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40. Coherent mid-infrared supercontinuum generation for pulse compression in a silicon-based chip

Author

Sinobad, Milan, primary, Torre, Alberto Della, additional, Armand, Remi, additional, Luther-Davies, Barry, additional, Ma, Pan, additional, Madden, Stephen, additional, Mitchell, Arnan, additional, Moss, David J., additional, Hartmann, Jean-Michel, additional, Fedeli, Jean-Marc, additional, Monat, Christelle, additional, and Grillet, Christian, additional

Published
2020
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42. Mid-infrared supercontinuum generation in hybrid chalcogenide/silicon-germanium waveguides

Author

Della Torre, Alberto, primary, Sinobad, Milan, additional, Armand, Rémi, additional, Luther-Davies, Barry, additional, Ma, Pan, additional, Madden, Stephen, additional, Debbarma, Sukanta, additional, Vu, Khu, additional, Moss, David J., additional, Mitchell, Arnan, additional, Hartmann, Jean-Michel, additional, Fedeli, Jean-Marc, additional, Monat, Christelle, additional, and Grillet, Christian, additional

Published
2019
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43. Low FSR Mode-Locked Laser Based on InP-Si 3 N 4 Hybrid Integration.

Author

Ibrahimi, Yasmine, Boust, Sylvain, Wilmart, Quentin, Paret, Jean-Francois, Garreau, Alexandre, Mekhazni, Karim, Fortin, Catherine, Duport, Francois, Fedeli, Jean-Marc, Sciancalepore, Corrado, Garcia, Stephanie, and van Dijk, Frederic

Abstract

Generation of optical frequency combs (OFC) using semiconductor laser sources has been an active research topic for years, since they offer good performances for many applications without the bulky and expensive aspects of ion doped fiber or crystal based laser sources. In this paper, we demonstrate the generation of low free spectral range mode-locked laser using hybrid III-V/Si3N4 butt coupling. We start by describing the design and the fabrication process of the active R-SOA chip made at our laboratory, and the passive Si3N4 chip having low losses measured to be around 6 dB/m. We then report the integration process and the results of passive mode locking. Our mode-locked laser has a repetition rate of 360 MHz, which is, to the best of our knowledge, the lowest repetition rate achieved for a hybrid integrated mode-locked laser. The frequency comb generated has a 30 dB bandwidth of 2.8 nm (349 GHz). Finally, we show the demonstration of active and harmonic mode locking up to the sixth harmonic. [ABSTRACT FROM AUTHOR]

Published
2021
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44. Laser hybride intégré sur InP-Si3N4/SiO2 à faible largeur de raie

Author

Boust, Sylvain, Primiani, Peppino, Gomez, Carmen, Paret, Jean-François, Garreau, Alexandre, Mekhazni, Karim, Fortin, Catherine, Makhsiyan, Mathilde, Fedeli, Jean-Marc, Duport, François, Van Dijk, Frederic, Vallet, Marc, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Société Française d'Optique, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Abstract

International audience; Nous présentons un laser hybride intégré sur puce InP-Si3N4/SiO2 atteignant une largeur de raie de 23 kHz. Une accordabilité électrique continue de 91 pm à 1546.1 nm, combinée à un taux de réjection moyen de 74 dB, est expérimentalement démontrée.

Published
2019

45. Procédé et dispositif d'analyse d'un échantillon, mettant en œuvre un support résonant

Author

JAMOIS, Cecile, Benyattou, Taha, Berguiga, Lotfi, Gaignebet, Nicolas, Dupoy, Mathieu, Fournier, Maryse, Fedeli, Jean-Marc, Pouteau, Patrick, Jamois, Cecile, Platerforme nanophotonique clipsable pour la biodétection - - CLIPO2015 - ANR-15-CE24-0019 - AAPG2015 - VALID, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Avalun, ANR-15-CE24-0019,CLIPO,Platerforme nanophotonique clipsable pour la biodétection(2015), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Published
2019

46. Tailoring the Dispersion of a Hybrid Chalcogenide/Silicon-Germanium Waveguide for Mid-Infrared Supercontinuum Generation

Author

Della Torre, Alberto, Sinobad, M, Luther-Davies, Barry, Ma, Pan, Madden, Steve, Debbarma, Sukhanta, Vu, Khu, Moss, David J., Mitchell, Arnan, Hartmann, Jean-Michel, Fedeli, Jean-Marc, Monat, C, Grillet, C, Della Torre, Alberto, Sinobad, M, Luther-Davies, Barry, Ma, Pan, Madden, Steve, Debbarma, Sukhanta, Vu, Khu, Moss, David J., Mitchell, Arnan, Hartmann, Jean-Michel, Fedeli, Jean-Marc, Monat, C, and Grillet, C

Abstract

We report mid-infrared supercontinuum generation in a silicon germanium-on-silicon waveguide. We show that the dispersion properties of the waveguide can be precisely tuned by controlling the thickness of a chalcogenide cladding layer.

Published
2019

47. Nonlinear Optical Properties of Si Nanocrystals

Author

Spano, Rita, Cazzanelli, Massimo, Daldosso, Nicola, Gaburro, Zeno, Ferraioli, Luigi, Tartara, Luca, Yu, Jin, Degiorgio, Vittorio, Hernandez, Sergi, Lebour, Youcef, Pellegrino, Paolo, Garrido, Blas, Jordana, Emmanuel, Fedeli, Jean Marc, and Pavesi, Lorenzo

Published
2006
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48. Narrow Linewidth InP/Si3N4 Laser for Lidar Applications

Author

Boust, Sylvain, Primiani, Peppino, Paret, Jean-François, Garreau, Antoine, Mekhazni, Karim, Fortin, Catherine, Provost, Jean-Guy, Fedeli, Jean-Marc, Duport, François, van Dijk, Frederic, Vallet, Marc, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), and THALES-ALCATEL

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2018

49. Laser en cavité étendue par hybridation de composants actifs InP avec des composants passifs en Si3N4

Author

Boust, Sylvain, Gomez, Carmen, Paret, Jean-François, Garreau, Alexandre, Mekhazni, Karim, Forin, Catherine, Provost, Jean-Guy, Fedeli, Jean-Marc, Primiani, Peppino, Duport, François, Van Dijk, Frederic, Vallet, Marc, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), THALES [France]-ALCATEL, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Abstract

National audience; Nous présentons une source laser hybride à 1,55 μm. Sa cavité de 2,4 mm est formée par la juxtaposition d’un amplificateur optique à semi-conducteurs sur InP et d’un miroir de Bragg contenu dans un guide d’onde en Si3N4. Le miroir de Bragg est accordable au moyen d’une chaufferette intégrée au composant, le mode d’émission laser est ainsi choisi.

Published
2018

50. Mid-infrared octave spanning supercontinuum generation to 8.5 μm in silicon-germanium waveguides

Author

Sinobad, Milan, Monat, Christelle, Luther-Davies, Barry, Ma, Pan, Madden, Stephen, Moss, David, Mitchell, Arnan, Allioux, David, Orobtchouk, Régis, Boutami, Salim, Hartmann, Jean-Michel, Fedeli, Jean-Marc, Grillet, Christian, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Royal Melbourne Institute of Technology University (RMIT University), Australian National University (ANU), Swinburne University of Technology [Melbourne], Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, OCIS : 320.6629, 190.4390, 140.3070
Abstract

International audience; Efficient on-chip molecule and bio-agent detection can be achieved by accessing strong molecular absorption lines in the mid-infrared, but it requires high output power broadband mid-IR sources. Here, we report supercontinuum generation in an air-clad $Si_{0.6}$$Ge_{0.4}$/Si waveguide that emits a broad spectrum spanning from 3.0 μm to 8.5 μm. These waveguides have anomalous dispersion and low propagation loss (

Published
2018

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