3 results on '"Fayolle-Lecocq, Murielle"'
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2. Gallium nitride power devices for power conversion applications
- Author
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Buckley, Julien, Escoffier, René, Mohamad, Blend, Becu, Stéphane, Biscarrat, Jérôme, Rigaud-Minet, Florian, Vauche, Laura, Maurya, Vishwajeet, Charles, Matthew, Haas, Helge, Fayolle-Lecocq, Murielle, Martin, Jérémy, Nguyen, Van-Sang, Le Royer, Cyrille, Gwoziecki, Romain, Gillot, Charlotte, Sousa, Véronique, Département Composants Silicium (DCOS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
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[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics - Abstract
International audience; This presentation will deal with our work on gallium nitride (GaN) devices for power electronics. The breakdown field of GaN is around 3.3 MV/cm and its mobility can surpass 1000 cm²/V.s, making it an excellent candidate for power switches. The lateral HEMT (High Electron Mobility Transistor) architecture using GaN epitaxy on Silicon is increasingly successful, especially for applications at 650V or below. GaN free-standing wafers are also being used to develop components with a vertical geometry which leads to higher power density due to volume instead of surface conduction.We have developed lateral normally-off GaN-on-Si MOSc-HEMTs (Metal Oxide Semiconductor channel HEMTs). Their advantage comes from the insulated gate technology results in extremely low gate current and a reduced temperature coefficient of its On-resistance, both of which are beneficial for the design of power converters. We will present a full micro inverter using our 100V and 650V MOSc-HEMTs for inclusion on an individual solar panel (DC 45V / AC 230V). The talk will also cover alternative lateral and vertical device architectures that can allow GaN to address new power conversion applications.
- Published
- 2022
3. Design, implementation and characterization of an integrated current sensing in GaN HEMT device by using the current-mirroring technique
- Author
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Nguyen, Van-Sang, Escoffier, René, Catellani, Stephane, Fayolle-Lecocq, Murielle, Martin, Jérémy, Département des Technologies Solaires (DTS), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Département Composants Silicium (DCOS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
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[SPI.NRJ]Engineering Sciences [physics]/Electric power ,[SPI.TRON]Engineering Sciences [physics]/Electronics - Abstract
International audience; Based on wide bandgap devices (WBG) characterization constraints, this work presents the design, implementation and characterization of an integrated current sensor in a GaN HEMT (Gallium Nitride High-Electron-Mobility Transistor) by using the current-mirroring technique. Two HEMTs are implemented in this design; the compromised between the size ratio of these two transistors in the current-mirroring circuit and the sensitivity of the sensor are taken into account on the device design phase. In the implementation phase, the auxiliary components are optimized for the operation of the sensor, and then the circuit with the integrated current sensing in GaN power device is characterized with a high temperature double pulse test method, up to 175°C.
- Published
- 2022
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