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193 results on '"Favre-Nicolin, V."'

3. Strain and correlation of self-organized Ge_(1-x)Mn_x nanocolumns embedded in Ge (001)

Author

Tardif, S., Favre-Nicolin, V., Lançon, F., Arras, E., Jamet, M., Barski, A., Porret, C., Bayle-Guillemaud, P., Pochet, P., Devillers, T., and Rovezzi, M.

Subjects
Condensed Matter - Materials Science
Abstract

We report on the structural properties of Ge_(1-x)Mn_x layers grown by molecular beam epitaxy. In these layers, nanocolumns with a high Mn content are embedded in an almost-pure Ge matrix. We have used grazing-incidence X-ray scattering, atomic force and transmission electron microscopy to study the structural properties of the columns. We demonstrate how the elastic deformation of the matrix (as calculated using atomistic simulations) around the columns, as well as the average inter-column distance can account for the shape of the diffusion around Bragg peaks., Comment: 9 pages, 7 figures

Published
2010
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4. Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging

Author

Favre-Nicolin, V., Mastropietro, F., Eymery, J., Camacho, D., Niquet, Y. M., Borg, B. M., Messing, M. E., Wernersson, L. -E., Algra, R. E., Bakkers, E. P. A. M., Metzger, T. H., Harder, R, and Robinson, I. K.

Subjects
Condensed Matter - Materials Science
Abstract

Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from the coherent diffraction data recorded on single objects. In this article we report results obtained for single homogeneous and heterogeneous nanowires with a diameter smaller than 100 nm, for which we used CDI to retrieve information about deformation and faults existing in these wires. The article also discusses the influence of stacking faults, which can create artefacts during the reconstruction of the nanowire shape and deformation., Comment: 18 pages, 6 figures Submitted to New Journal of Physics

Published
2009
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5. Coherent Diffraction Imaging of Single 95nm Nanowires

Author

Favre-Nicolin, V., Eymery, J., Koster, R. K., and Gentile, P.

Subjects
Physics - Instrumentation and Detectors, Condensed Matter - Materials Science
Abstract

Photonic or electronic confinement effects in nanostructures become significant when one of their dimension is in the 5-300 nm range. Improving their development requires the ability to study their structure - shape, strain field, interdiffusion maps - using novel techniques. We have used coherent diffraction imaging to record the 3-dimensionnal scattered intensity of single silicon nanowires with a lateral size smaller than 100 nm. We show that this intensity can be used to recover the hexagonal shape of the nanowire with a 28nm resolution. The article also discusses limits of the method in terms of radiation damage., Comment: 5 pages, 5 figures

Published
2008
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6. Step by step capping and strain state of GaN/AlN quantum dots studied by grazing incidence diffraction anomalous fine structure

Author

Coraux, J., Favre-Nicolin, V., Renevier, H., Proietti, M. G., and Daudin, B.

Subjects
Condensed Matter - Materials Science
Abstract

The investigation of small size embedded nanostructures, by a combination of complementary anomalous diffraction techniques, is reported. GaN Quantum Dots (QDs), grown by molecular beam epitaxy in a modified Stranski-Krastanow mode, are studied in terms of strain and local environment, as a function of the AlN cap layer thickness, by means of grazing incidence anomalous diffraction. That is, the X-ray photons energy is tuned across the Ga absorption K-edge which makes diffraction chemically selective. Measurement of \textit{hkl}-scans, close to the AlN (30-30) Bragg reflection, at several energies across the Ga K-edge, allows the extraction of the Ga partial structure factor, from which the in-plane strain of GaN QDs is deduced. From the fixed-Q energy-dependent diffracted intensity spectra, measured for diffraction-selected iso-strain regions corresponding to the average in-plane strain state of the QDs, quantitative information regarding composition and the out-of-plane strain has been obtained. We recover the in-plane and out-of-plane strains in the dots. The comparison to the biaxial elastic strain in a pseudomorphic layer indicates a tendency to an over-strained regime., Comment: submitted to PRB

Published
2005
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7. In situ resonant x-ray study of vertical correlation and capping e ects during GaN/AlN quantum dots growth

Author

Coraux, J., Renevier, H., Favre-Nicolin, V., Renaud, G., and Daudin, B.

Subjects
Condensed Matter - Materials Science
Abstract

Grazing incidence anomalous x-ray scattering was used to monitor in situ the molecular beam epitaxy growth of GaN/AlN quantum dots (QDs). The strain state was studied by means of grazing incidence Multi-wavelength Anomalous Di raction (MAD) in both the QDs and the AlN during the progressive coverage of QDs by AlN monolayers. Vertical correlation in the position of the GaN QDs was also studied by both grazing incidence MAD and anomalous Grazing Incidence Small Angle Scattering (GISAXS) as a function of the number of GaN planes and of the AlN spacer thickness. In a regime where the GaN QDs and the AlN capping are mutually strain influenced, a vertical correlation in the position of QDs is found with as a side-e ect an average increase in the QDs width., Comment: 3 pages, 4 figures, submitted to Appl. Phys. Lett

Published
2005

8. Strain, size and composition of InAs Quantum Sticks, embedded in InP, by means of Grazing Incidence X-ray Anomalous Diffraction

Author

Letoublon, A., Favre-Nicolin, V., Renevier, H., Proietti, M. G., Monat, C., Gendry, M., Marty, O., and Priester, C.

Subjects
Condensed Matter
Abstract

We have used x-ray anomalous diffraction to extract the x-ray structure factor of InAs quantum stick-like islands, embedded in InP. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54nm. The InAs out of plane deformation, relative to InP, is equal to 6.1%. Diffraction Anomalous Fine Structure provides a clear evidence of pure InAs QSs. Finite Difference Method calculations reproduce well the diffraction data, and give the strain along the growth direction. Chemical mixing at interfaces is at most of 1ML, Comment: 9 pages, 7 figures, submitted

Published
2003
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11. Scanning x-ray microscopy imaging of strain relaxation and fluctuations in thin patterned SiGe-on-insulator nanostructures.

Author

Girard, G., Berthelon, R., Andrieu, F., Leake, S. J., Chahine, G. A., Schülli, T., Eymery, J., and Favre-Nicolin, V.

Subjects
X-ray imaging, NANOSTRUCTURES, STATISTICS, X-ray diffraction, X-ray microscopy, CONDENSATION
Abstract

Strain engineered performance enhancement in SiGe channels for p-MOSFETs is one of the main drivers for the development of microelectronic technologies. Thus, there is a need for precise and accurate strain mapping techniques with small beams. Scanning X-Ray Diffraction Microscopy (SXDM) is a versatile tool that allows measuring quantitative strain maps on islands as thin as 13 nm quickly. From the high velocity and robustness of the technique, statistical information can be extracted for a large number of individual islands of different sizes. In this paper, we used the advantages of SXDM to demonstrate the effectiveness of the condensation method used to grow ultra-thin layers of strained SiGe and to determine their relaxation lengths at patterned interfaces. [ABSTRACT FROM AUTHOR]

Published
2021
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13. Structural properties of GaN quantum dots

Author

Daudin, B, Rouvière, J -L, Jalabert, D, Coraux, J, Favre-Nicolin, V, Renevier, H, Cho, M H, Chung, K B, Moon, D W, Proietti, M G, Llorens, J M, Garro, N, Cros, A, García-Cristóbal, A, Cullis, A. G., editor, and Hutchison, J. L., editor

Published
2005
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24. Structure and magnetism of Ge3Mn5 clusters.

Author

Jain, A., Jamet, M., Barski, A., Devillers, T., Yu, I.-S., Porret, C., Bayle-Guillemaud, P., Favre-Nicolin, V., Gambarelli, S., Maurel, V., Desfonds, G., Jacquot, J. F., and Tardif, S.

Subjects
MAGNETISM, GERMANIUM, MANGANESE, MOLECULAR dynamics, MOLECULAR beam epitaxy, ELECTRON paramagnetic resonance
Abstract

We have grown Ge3Mn5 clusters by codepositing germanium and manganese atoms on Ge(001) substrates using low temperature molecular beam epitaxy and further annealing the films at high temperature. Clusters are spherical and randomly distributed in the germanium film in epitaxial relationship with the diamond lattice. They exhibit a broad size distribution. By performing a careful x-ray diffraction analysis, we could find that 97% of Ge3Mn5 clusters have their c-axis perpendicular to the film plane while 3% exhibit in-plane c-axis. We could also show a slight in-plane distortion of the Ge3Mn5 lattice leading to a reduction of uniaxial magnetic anisotropy. These observations are well confirmed by complementary superconducting quantum interference device and electron paramagnetic resonance measurements. [ABSTRACT FROM AUTHOR]

Published
2011
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25. Growth of crystalline γ-Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation.

Author

Merckling, C., El-Kazzi, M., Saint-Girons, G., Hollinger, G., Largeau, L., Patriarche, G., Favre-Nicolin, V., and Marty, O.

Subjects
ALUMINUM oxide, SILICON, MOLECULAR beam epitaxy, THIN films, X-ray diffraction, ELECTRON diffraction, TRANSMISSION electron microscopy
Abstract

This work reports on the molecular beam epitaxy of high quality single crystal γ-Al2O3 thin films on Si(001) and Si(111) substrates. For both substrate orientations, film surfaces are found to be smooth and the oxide-Si interfaces are atomically abrupt without interfacial layers. Reflection high energy electron diffraction, x-ray diffraction, and transmission electronic microscopy characterizations were used to study the epitaxial relationship and the structural quality of the γ-Al2O3 layers depending on the Si substrate orientation. On Si(111), the alumina layers present a high crystalline quality. Evidence is made for a “two-for-three” unit cell indirect epitaxial relationship between γ-Al2O3 and Si(111). On Si(001), after a transition from cubic to hexagonal surface symmetry, the growth planes of γ-Al2O3 change from (001) to (111) leading to a bidomain growth. [ABSTRACT FROM AUTHOR]

Published
2007
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26. X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on Silicon

Author

Wang, Yanping, Létoublon, Antoine, Lucci, Ida, Cornet, Charles, Favre-Nicolin, V., Chahine, G., Eymery, J., Pedesseau, Laurent, Bahri, M., Largeau, L., Patriarche, G., Ponchet, Anne, Vallet, Maxime, Stodolna, Julien, Charbonnier, Simon, Turban, Pascal, Léger, Yoan, Guillemé, Pierre, Shülli, T., Durand, Olivier, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), European Synchrotron Radiation Facility (ESRF), Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Chinese Scholarship Council (PHD), ANR-05-PADD-0014,ACDUQ,Action collective pour une maîtrise durable de la santé animale : qualification sanitaire en élevage de ruminants(2005), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), and Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)

Subjects
X-ray, Planar defects, coherent scattering, epitaxy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], GaP, Si
Abstract

International audience; GaP, quasi-lattice matched to Si, allows growth of low defect density III-V/Si pseudosubstrates [1]. However, Antiphase boundaries (APB) likely appear and must be avoided. In this context, X-ray nanodiffraction and Bragg coherent diffraction imaging (BCDI) have been used as non-destructive techniques for local characterization of APB configuration [2]. Different GaP/Si nanolayers were studied at ID01/ESRF with an 8 keV coherent xray beam. Here a 140nm thick GaP presents annihilated APB (less than 3/m emerging APB). Bragg geometry ptychography of the APB has been attempted using (002) GaP weak reflection. This shows a peak splitting, characteristic of a heterogeneous APB density. But a still too high defect density precludes successful phase retrieval imaging. Two-dimensional fast mapping (kmap) [3] over the (004) and the (002) reflections shows for different regions of integrated intensities (ROI) (Fig. 1a) weak (Bragg maximum -0.5° on rocking angle) and strong scattering conditions (Fig. 1b and 1c respectively). As shown fig. 1b), the weak scattered intensity in ROI1, exhibits contrast lines oriented along both [1 1 0] and [-1 1 0] crystallographic directions. This contrast corresponds to regions of high tilt, surrounding misfit dislocations [3]. Strong scattering conditions performed on the (004) (Fig. 1c) and the (002) Bragg reflections present a quite different contrast with large spotty regions. We believe that this anisotropic contrast is due to weak tilt/strain, associated to the APD annihilation process.1. Y. P. Wang et al., Appl. Phys. Lett. 107, 191603 (2015).2. S. Labat et al., ACS Nano 9, 9210 (2015).3. M. H. Zoellner et al., ACS Appl. Mater. Interfaces 7, 9031 (2015).

Published
2016

27. Growth of crystalline [gamma]-[Al.sub.2][O.sub.3] on Si by molecular beam epitaxy: influence of the substrate orientation

Author

Merckling, C., El-Kazzi, M., Saint-Girons, G., Hollinger, G., Largeau, L., Patriarche, G., Favre-Nicolin, V., and Marty, O.

Subjects
Aluminum oxide -- Structure, Aluminum oxide -- Optical properties, Epitaxy -- Research, X-rays -- Diffraction, X-rays -- Observations, Physics
Abstract

The study evidence for the molecular beam epitaxy of high quality single crystal [gamma]-[Al.sub.2][O.sub.3] thin films on Si(001) and Si(111) substrates is reported.

Published
2007

28. Quantitative structural characterization of GaN quantum dot ripening using reflection high-energy electron diffraction

Author

Coraux, J., Favre-Nicolin, V., Renevier, H., Proietti, M.G., Amstatt, B., Bellet-Amalric, E., and Daudin, B.

Subjects
Epitaxy -- Research, Gallium compounds -- Optical properties, Electrons -- Diffraction, Electrons -- Analysis, Physics
Abstract

The reflection high-energy electron diffraction (RHEED) is used to monitor the strain of GaN/AlN quantum dots (QDs) grown by molecular beam epitaxy. The dot ripening under vacuum has induced a progressive in and out-of-plane strain relaxation that is attributed to the size increase of the dots.

Published
2007

31. Systèmes épitaxiés combinant oxydes et semiconducteurs

Author

Saint-Girons, Guillaume, Penuelas, Jose, Danescu, Alexandre, Gobaut, Benoit, Chettaoui, Azza, GRENET, Geneviève, Renaud, G., Favre-Nicolin, V., Blanc, Nils, Zhou, Tao, El-Kazzi, M., Silly, M., Sirotti, F., Inl, Laboratoire INL UMR5270, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Sincrotrone Trieste SCpA (SINCROTRONE TRIESTE), Sincrotrone Trieste SCpA, Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université Joseph Fourier - Grenoble 1 (UJF), CRG & Grands instruments (NEEL - CRG), Institut Néel (NEEL), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), Huazhong University of Science and Technology [Wuhan] (HUST), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), CRG et Grands Instruments (CRG), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

7-8 avril 2014; International audience; no abstract

Published
2014

34. Tuning the conductivity type in a room temperature magnetic oxide: Ni-doped Ga0.6Fe1.4O3 thin films

Author

Demchenko, A., primary, Chang, Y., additional, Chikoidze, E., additional, Berini, B., additional, Lefèvre, C., additional, Roulland, F., additional, Ulhaq-Bouillet, C., additional, Versini, G., additional, Barre, S., additional, Leuvrey, C., additional, Favre-Nicolin, V., additional, Boudet, N., additional, Zafeiratos, S., additional, Dumont, Y., additional, and Viart, N., additional

Published
2016
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36. Multiwavelength anomalous diffraction and diffraction anomalous fine structure to study composition and strain of semiconductor nanostructures

Author

Favre-Nicolin, V., Proietti, M. G., Katcho, N. A., and Renevier, H.

Abstract

The aim of this paper is to illustrate the use of Multi-Wavelength Anomalous Diffraction (MAD) and Diffraction Anomalous Fine Structure (DAFS) spectroscopy for the study of structural properties of semiconductor nanostructures. We give a brief introduction on the basic principles of these techniques providing a detailed bibliography. Then we focus on the data reduction and analysis and we give specific examples of their application on three different kinds of semiconductor nanostructures: Ge/Si nanoislands, AlN capped GaN/AlN Quantum Dots and AlGaN/AlN Nanowires. We show that the combination of MAD and DAFS is a very powerful tool to solve the structural problem of these materials of high technological impact. In particular, the effects of composition and strain on diffraction are disentangled and composition can be determined in a reliable way, even at the interface between nanostructure and substrate. We show the great possibilities of this method and give the reader the basic tools to undertake its use. © 2012 EDP Sciences, Springer-Verlag., MGP and NAK acknowledge support of Spanish Ministry of Science and Education project MAT2008-03074.

Published
2012

37. Monolithic integration of Ge on SrTiO3 : mismatch accommodation for very heterogeneous epitaxial systems

Author

GOBAUT, B., Penuelas, J., DANESCU, A., Blanc, N., Favre-Nicolin, V., Renaud, G., Wang, J., Lefebvre, I., Saint-Girons, G., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2012

38. Strain and correlation of self-organized Ge1−xMnx nanocolumns embedded in Ge (001)

Author

Tardif, Samuel, Favre-Nicolin, V., Lançon, F., Arras, E., Jamet, M., Barski, A., Porret, C., Bayle-Guillemaud, Pascale, Pochet, P., Devillers, T., Rovezzi, M., Micro et NanoMagnétisme (MNM), Institut Néel (NEEL), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratory of Atomistic Simulation (LSIM ), Nanostructures et Magnétisme (NM), Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut Nanosciences et Cryogénie (INAC), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), European Synchrotron Radiation Facility (ESRF), Micro et NanoMagnétisme (NEEL - MNM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut Nanosciences et Cryogénie (INAC), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2010
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40. Strain relaxation and critical thickness for epitaxial LaAlO3 thin films grown on SrTiO3(001) substrates by molecular beam epitaxy

Author

Merckling, C., El-Kazzi, M., Delhaye, G., Favre-Nicolin, V., Robach, Y., Gendry, M., Grenet, G., Saint-Girons, Guillaume, Hollinger, G., INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Saint-Girons, Guillaume

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2007

41. Molecular beam epitaxial growth of Al2O3 on silicon

Author

Mercling, C., El-Kazzi, M., Delhaye, G., Favre-Nicolin, V., Marty, O., Jugnet, Y., Grenet, G., Robach, Y., Gendry, M., Hollinger, G., IRCELYON, ProductionsScientifiques, Institut de recherches sur la catalyse (IRC), and Centre National de la Recherche Scientifique (CNRS)

Subjects
[CHIM.CATA] Chemical Sciences/Catalysis, [CHIM.CATA]Chemical Sciences/Catalysis
Abstract

national

Published
2006

42. Mechanism of GaN quantum dots capped with AlN: An AFM, electron microscopy, and x-ray anomalous diffraction study

Author

Coraux, Johann, Amstatt, B., Budagoski, J. A., Bellet-Amalric, E., Rouvière, Jean-Luc, Favre-Nicolin, V., Proietti, M. G., Renevier, H., and Daudin, B.

Abstract

Capping of GaN quantum dots with AlN has been studied at the monolayer scale by combining atomic force microscopy, high resolution electron microscopy, and grazing incidence x-ray anomalous diffraction. Consistent with the results provided by these three techniques, it has been demonstrated that, following a wetting of the dots by an AlN layer up to 4 ML coverage, subsequent capping is dominated by a preferential AlN growth in between the dots, eventually resulting in a complete smoothing of AlN. Interdiffusion has been shown to be negligible during this process, which makes the GaN/AlN system unique among semiconductors.

Published
2006

43. Structural properties of GaN quantum dots

Author

Daudin, B, primary, Rouvière, J -L, additional, Jalabert, D, additional, Coraux, J, additional, Favre-Nicolin, V, additional, Renevier, H, additional, Cho, M H, additional, Chung, K B, additional, Moon, D W, additional, Proietti, M G, additional, Llorens, J M, additional, Garro, N, additional, Cros, A, additional, and García-Cristóbal, A, additional

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47. Composition and strain of Ge domes on Si(001) close to the dome/susbtrate interface

Author

Katcho, N. A., Proietti, M. G., Renevier, H., Favre-Nicolin, V., Katcho, N. A., Proietti, M. G., Renevier, H., and Favre-Nicolin, V.

Abstract

Strain fields and composition gradient in epitaxial Ge dome-shaped islands grown on Si(001) substrates are determined by combining grazing-incidence multiwavelength anomalous diffraction and grazing-incidence diffraction anomalous fine-structure spectroscopy. This unique combination, together with numerical X-ray diffraction calculations carried out in the frame of the distorted-wave Born approximation with a structural model obtained by molecular dynamics, is shown to probe unambiguously the Ge composition even in the difficult region close to the island/substrate interface and to elucidate the vertical compositional profile inside the dome-shaped islands. A rather abrupt chemical composition profile close to the interface and a slight increase of the average Ge composition from the base to the top are observed for islands grown at a temperature of 650 °C. These experiments provide unique fundamental knowledge on the mechanism of Si-Ge intermixing during island growth, clarifying and quantifying the effects of growth conditions and morphology on the structural local properties of the nano-islands. © 2011 Europhysics Letters Association.

Published
2011

48. Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging

Author

Favre-Nicolin, V., Mastropietro, F., Eymery, J., Camacho, D., Niquet, Y.M., Borg, B.M., Messing, M.E., Wernersson, L.-E., Algra, R.E., Bakkers, E.P.A.M., Metzger, T.H., Harder, R., Robinson, I.K., Favre-Nicolin, V., Mastropietro, F., Eymery, J., Camacho, D., Niquet, Y.M., Borg, B.M., Messing, M.E., Wernersson, L.-E., Algra, R.E., Bakkers, E.P.A.M., Metzger, T.H., Harder, R., and Robinson, I.K.

Abstract

Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from the coherent diffraction data recorded on single objects. In this paper, we report results obtained for single homogeneous and heterogeneous nanowires with a diameter smaller than 100 nm, for which we used CDI to retrieve information about deformation and faults existing in these wires. We also discuss the influence of stacking faults, which can create artefacts during the reconstruction of the nanowire shape and deformation. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 035013

Published
2010

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