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A growth scheme at a low processing temperature for high crystalline-quality of ZnO nanostructures can be a prime stepping stone for the future of various optoelectronic devices manufactured on transparent plastic substrates. In this study, ZnO nanorods (NRs) grown by the hydrothermal method at 150 °C through doping of transition metals (TMs), such as Co, Ni, or Co-plus-Ni, on polyethylene terephthalate substrates were investigated by various surface analysis methods. The TM dopants in ZnO NRs suppressed the density of various native defect-states as revealed by our photoluminescence and X-ray photoelectron spectroscopy analysis. Further investigation also showed the doping into ZnO NRs brought about a clear improvement in carrier mobility from 0.81 to 3.95 cm2/V-s as well as significant recovery in stoichiometric contents of oxygen. Ultra-violet photodetectors fabricated with Co-plus-Ni codoped NRs grown on an interdigitated electrode structure exhibited a high spectral response of ~137 A/W, on/off current ratio of ~135, and an improvement in transient response speed with rise-up and fall-down times of ~2.2 and ~3.1 s, respectively.

In this study, we investigated the effect of gate length and surface area of the ZnO ultraviolet (UV) absorbing structure on the transient characteristics of AlGaN/GaN HEMT based UV photodetectors. The gate-areas (2, 6 and 18 μm lengths with same width of 100 μm) of AlGaN/GaN HEMTs are covered with ZnO thin film and nanorods (NR) separately. The fabricated devices show enhancement in response speed with the reduction of gate length or the increase of ZnO surface area. The best response speed of ∼10 ms response time and ∼190 ms recovery time is measured from the NR-gated device with a gate length of 2 μm. A model for the oxygen desorption kinetics is proposed for the first time which theoretically shows that the response speed is dependent on two key parameters; light absorbing surface area and gate length. From our model analysis, it is shown that predicted response time is a strong function of these two device parameters, and the calculations show a good agreement with the experimental measurements.

As a developing technology for flexible electronic device fabrication, ultra-violet (UV) photodetectors (PDs) based on a ZnO nanostructure are an effective approach for large-area integration of sensors on nonconventional substrates, such as plastic or paper. However, photoconductive ZnO nanorods grown on flexible substrates have slow responses or recovery as well as low spectral responsivity R because of the native defects and inferior crystallinity of hydrothermally grown ZnO nanorods at low temperatures. In this study, ZnO nanorod crystallites are doped with Cu or Ni/Cu when grown on polyethylene terephthalate (PET) substrates in an attempt to improve the performance of flexible PDs. The doping with Ni/Cu or Cu not only improves the crystalline quality but also significantly suppresses the density of deep-level emission defects in as-grown ZnO nanorods, as demonstrated by X-ray diffraction and photoluminescence. Furthermore, the X-ray photoelectron spectroscopy analysis shows that doping with the transition metals significantly increases the oxygen bonding with metal ions with enhanced O/Zn stoichiometry in as-grown nanorods. The fabricated flexible PD devices based on an interdigitated electrode structure demonstrates a very high R of ~123 A/W, a high on-off current ratio of ~130, and a significant improvement in transient response speed exhibiting rise and fall time of ~8 and ~3 s, respectively, by using the ZnO nanorods codoped by Ni/Cu.

Owing to their intrinsic wide bandgap properties ZnO and GaN materials are widely used for fabricating passive-type visible-blind ultraviolet (UV) photodetectors (PDs). However, most of these PDs have a very low spectral responsivity R, which is not sufficient for detecting very low-level UV signals. We demonstrate an active type UV PD with a ZnO nanorod (NR) structure for the floating gate of AlGaN/GaN high electron mobility transistor (HEMT), where the AlGaN/GaN epitaxial layers are isolated by the nano-scale fins (NFIs) of two different fin widths (70 and 80 nm). In the dark condition, oxygen adsorbed at the surface of the ZnO NRs generates negative gate potential. Upon UV light illumination, the negative charge on the ZnO NRs is reduced due to desorption of oxygen, and this reversible process controls the source-drain carrier transport property of HEMT based PDs. The NFI PDs of a 70 nm fin width show the highest R of a ~3.2 × 107 A/W at 340 nm wavelength among the solid-state UV PDs reported to date. We also compare the performances of NFI PDs with those of conventional mesa isolation (MI, 40 × 100 µm2). NFI devices show ~100 times enhanced R and on-off current ratio than those of MI devices. Due to the volume effect of the small active region, a much faster response speed (rise-up and fall-off times of 0.21 and 1.05 s) is also obtained from the NFI PDs with a 70 nm fin width upon the UV on-off transient.

We examined the influence of O2 plasma treatment for the ZnO seed layer (SL) crystallites on the material characteristics of ZnO nanorods (NRs) synthesized by the hydrothermal method. Diode photocurrent and photo-response transient characteristics of the p-Si/n-ZnO-NR heterojunction-based ultraviolet (UV) photodetectors were also examined according to the plasma treatment for the SLs. The superior optical properties of NRs were measured from the photoluminescence by exhibiting 4.6 times greater near-band edge emission when grown on the O2-plasma-treated SL. The degree of (002) orientation of the NR crystals was improved from 0.67 to 0.95, as revealed by X-ray diffraction analysis, and a higher NR surface density of ~80 rods/μm2 with a smaller mean diameter of 65 nm were also observed by the SL modification using plasma-treatment. It was shown by X-ray photo-electron spectroscopy that this improvement of NR crystalline quality was due to the recovery of stoichiometric oxygen with significant reduction of oxygenated impurities in the SL crystals and the subsequent low-energy growth mode for the NRs. UV PDs fabricated by the proposed SL plasma treatment technique showed significantly enhanced UV-to-dark current ratio from 2.0 to 83.7 at a forward bias of +5 V and faster photo-response characteristics showing the reduction in recovery time from 16 s to 9 s.

In this study, the ambient condition for the as-coated seed layer (SL) annealing at 350 °C is varied from air or nitrogen to vacuum to examine the evolution of structural and optical properties of ZnO nanorods (NRs). The NR crystals of high surface density (~240 rods/μm2) and aspect ratio (~20.3) show greatly enhanced (002) degree of orientation and crystalline quality, when grown on the SLs annealed in vacuum, compared to those annealed in air or nitrogen ambient. This is due to the vacuum-annealed SL crystals of a highly preferred orientation toward (002) and large grain sizes. X-ray photoelectron spectroscopy also reveals that the highest O/Zn atomic ratio of 0.89 is obtained in the case of vacuum-annealed SL crystals, which is due to the effective desorption of hydroxyl groups and other contaminants adsorbed on the surface formed during aqueous solution-based growth process. Near band edge emission (ultra violet range of 360–400 nm) of the vacuum-annealed SLs is also enhanced by 44% and 33% as compared to those annealed in air and nitrogen ambient, respectively, in photoluminescence with significant suppression of visible light emission associated with deep level transition. Due to this improvement of SL optical crystalline quality, the NR crystals grown on the vacuum-annealed SLs produce ~3 times higher ultra violet emission intensity than the other samples. In summary, it is shown that the ZnO NRs preferentially grow along the wurtzite c-axis direction, thereby producing the high crystalline quality of nanostructures when they grow on the vacuum-annealed SLs of high crystalline quality with minimized impurities and excellent preferred orientation. The ZnO nanostructures of high crystalline quality achieved in this study can be utilized for a wide range of potential device applications such as laser diodes, light-emitting diodes, piezoelectric transducers and generators, gas sensors, and ultraviolet detectors.

Central composite design methodology has been employed to model the sludge yield data obtained during liquid-liquid extractive rerefining of spent lubricants using an alcohol (1-butanol) and a ketone (methyl ethyl ketone) as prospective solvents. The study has resulted in two reasonably accurate multivariate process models that relate the sludge yield (R2=0.9065 and 0.9072 for alcohol and ketone, resp.) to process variables (settling time t, operating temperature T, and oil to solvent ratio r). Construction of such models has allowed the maximization of the sludge yield (more than 8% and 3% in case of alcohol and ketone, resp.) so that the extraction of useable oil components from spent lubricants can economically be performed under extremely mild conditions (t = 16.7 h, T=10°C, and r=2) and fairly moderate conditions (t = 26.6 h, T=10°C, and r=5) established for the alcohol and ketone correspondingly. Based on these performance parameters alcohol appears to be superior over ketone for this extraction process. Additionally extractive treatment results in oil stocks with lesser quantity of environmentally hazardous polyaromatic hydrocarbons that are largely left in the separated sludge.

A selective and mild (55 °C and 50 psig) homogeneous oxidation system has been described to produce hydroperoxides from a narrow cut made from typical gas oil. During this process oil, dissolved in wet acetic acid, is treated with air in the presence of the redox couple Co(III)/Co(II) (partially oxidized catalyst, POC). A straightforward route to POC consists of oxidizing Co(II) in wet acetic acid with calculated aqueous potassium chlorate. Initiation is the manifestation of the potent oxidizing ability of Co(III) toward generating alkyl radicals from hydrocarbons in the oil. Classical propagation then leads to assorted hydroperoxides, simultaneously decomposed by POC. Kinetics of the simultaneous formation and decomposition of hydroperoxides, under varying sets of process and composition variables, was studied in an isothermal, mechanically agitated, semibatch reactor, operating in the pure kinetic regime. A unique kinetic model, based on a rare irreversible consecutive reaction network (pseudo-first-order formation of hydroperoxides followed by their second-order decomposition), has been found to reasonably describe the kinetic data (R2= 0.9214). This kinetic model allowed the evaluation of the formation and decomposition rate constants that permitted the estimation of conversion of oil and selectivity to hydroperoxides. On average 15.12 ± 3.23% conversion was achieved in 9.3 ± 4.0 min with 99.86 ± 0.23, 92.88 ± 7.95, and 28.77 ± 11.67% selectivities for 0.10, 1.00, and 10.0% conversions, respectively. [ABSTRACT FROM AUTHOR]

Recently, many researchers have been paying attention to nanogenerators (NGs) as energy sources for self-powered mirco-nano systems, and studying how to achieve their higher power generation. Hence, we propose a hybrid-type NG for harvesting both the piezoelectric and triboelectric effect simultaneously. In the proposed hybrid NG, the piezoelectric NG (PNG) and triboelectric NG (TENG) are fabricated using polydimethylsiloxane (PDMS) and perovskite zinc stannite (ZnSnO3) nanocubes with a high charge polarization of 59 uC cm−2 composite (PDMS + ZnSnO3) and UV surface-treated PDMS, respectively. To effectively combine a high output current of PNG and a high voltage of TENG, these two NGs are stacked upon each other, and separated by sponge spacers providing a uniform air gap for the triboelectric effect. In particular, this fabricated structure has a low Young’s modulus for piezoelectricity. The proposed hybrid NG device effectively achieves a combined peak voltage of 300 V on an open circuit, a power density of 10.41 mW cm−2 at 1 MΩ load, and a maximum short circuit current density of 16 mA cm−2 at 50 Ω load. It is feasible that the proposed NG can be utilized as a source for various self-powered systems. [ABSTRACT FROM AUTHOR]