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3. Impact of <inline-formula><tex-math notation="LaTeX">$V_\mathsf {th}$</tex-math></inline-formula> Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors

6. TCAD Modelling of Magnetic Hall Effect Sensors.

9. Buried RF sensors for smart road infrastructure : empirical communication range testing, propagation by line of sight, diffraction and reflection model and technology comparison for 868 MHz–2.4 GHz

11. Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region

18. Enhanced Fast Frequency Support Schemes

26. Enhanced fast frequency support schemes

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