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Topological materials with boundary (surface/edge/hinge) states have attracted tremendous research interest. Besides, unconventional (obstructed atomic) materials have recently drawn lots of attention owing to their obstructed boundary states. Experimentally, Josephson junctions (JJs) constructed on materials with boundary states produce the peculiar boundary supercurrent, which was utilized as a powerful diagnostic approach. Here, we report the observations of conspicuous hinge supercurrent in NiTe$_2$-based JJs. Particularly, applying an in-plane magnetic field along the Josephson current could rapidly suppress the bulk supercurrent and retain the nearly pure hinge supercurrent, namely the magnetic field filtering of supercurrent. Further systematic comparative analysis and theoretical calculations demonstrate the existence of unconventional nature and obstructed hinge states in NiTe$_2$. Our results revealed the unique hinge states in unconventional metal NiTe$_2$, and demonstrated in-plane magnetic field as an efficient method to filter out the futile bulk contributions and thereby to highlight the hinge states hidden in topological/unconventional materials., 20+6 pages,6+5 figures

We demonstrate that superconducting gatemon qubits based on superconductor-semiconductor-superconductor Josephson junctions can be constructed on hole-type Ge/Si core/shell nanowires. The frequency of the qubit can be set firstly by controlling the diffusion of Al in the nanowire via thermal annealing, which yields a suitable critical supercurrent allowing the qubit frequency to be within the experimentally accessible range, and then by fine tuning of a gate voltage, by which an accurate adjustment of the frequency can be realized. On the resulted qubit, Rabi oscillation with an energy relaxation time $${T}_{1} \sim 180\,{\rm{ns}}$$ T 1 ~ 180 ns was observed in the time domain, an average decoherence time $${T}_{2}^{* } \sim 15\,{\rm{ns}}$$ T 2 * ~ 15 ns was obtained, and the gate voltage dependence of both $${T}_{1}$$ T 1 and $${T}_{2}^{* }$$ T 2 * was investigated. Such a hole-type superconducting gatemon qubit, based on materials with strong spin-orbit coupling and potentially the absence of hyperfine interaction after isotope purification, could be used for exploring the quantum coherence phenomena of hole-gas and even Majorana physics in Ge-based quantum devices.

Recently, new states of matter like superconducting or topological quantum states were found in transition metal dichalcogenides (TMDs) and manifested themselves in a series of exotic physical behaviors. Such phenomena have been demonstrated to exist in a series of transition metal tellurides including MoTe2, WTe2, and alloyed MoxW1-xTe2. However, the behaviors in the alloy system have been rarely addressed due to their difficulty in obtaining atomic layers with controlled composition, albeit the alloy offers a great platform to tune the quantum states. Here, we report a facile CVD method to synthesize the MoxW1-xTe2 with controllable thickness and chemical composition ratios. The atomic structure of a monolayer MoxW1-xTe2 alloy was experimentally confirmed by scanning transmission electron microscopy. Importantly, two different transport behaviors including superconducting and Weyl semimetal states were observed in Mo-rich Mo0.8W0.2Te2 and W-rich Mo0.2W0.8Te2 samples, respectively. Our results show that the electrical properties of MoxW1-xTe2 can be tuned by controlling the chemical composition, demonstrating our controllable CVD growth method is an efficient strategy to manipulate the physical properties of TMDCs. Meanwhile, it provides a perspective on further comprehension and sheds light on the design of devices with topological multicomponent TMDC materials.

Many proposals in exploring topological quantum computation are based on superconducting quantum devices constructed on materials with strong spin-orbit coupling (SOC). For these devices, a full control on both the magnitude and the spatial distribution of the supercurrent would be highly demanded, but has been elusive up to now. We constructed proximity-type Josephson junction on nanoplates of Bi2O2Se, a new emerging semiconductor with strong SOC. Through electrical gating, we show that the supercurrent can be fully turned ON and OFF, and its real-space pathways can be configured either through the bulk or along the edges. Our work demonstrates Bi2O2Se as a promising platform for constructing multifunctional hybrid superconducting devices as well as for searching for topological superconductivity.

The quality of a superconductor-normal metal-superconductor Josephson junction (JJ) depends crucially on the transparency of the superconductor-normal metal (S/N) interface. We demonstrate a technique for fabricating planar JJs with perfect S/N interfaces. The technique utilizes a strong inverse proximity effect discovered in Al/V$_5$S$_8$ bilayers, by which the Al layer is driven into the resistive state. The highly transparent S/N homointerface and the peculiar normal metal enable the flow of Josephson supercurrent across a 2.9 $\mu$m long weak link. Moreover, our JJ exhibits a giant critical current and a large product of the critical current and the normal state resistance., Comment: 20 pages, 9 figures

Recently, the transition metal dichalcogenide ${\mathrm{NbTe}}_{2}$ was predicted to be a candidate material of topological semimetal. Here we report the magnetotransport data measured in two devices fabricated from ${\mathrm{NbTe}}_{2}$ nanoflakes. A nonsaturating linear magnetoresistance was observed in both devices at various temperatures. A close analysis shows that the observed linear magnetoresistance is not consistent with the Abrikosov quantum theory; instead, it can be well explained in the framework of the effective-medium theory which describes the classical magnetoresistance of inhomogeneous systems. Our results indicate that the linear magnetoresistance of ${\mathrm{NbTe}}_{2}$ is most likely a classical magnetoresistance induced by disorders and inhomogeneities. This speculation is supported by the abundant domain structures observed in ${\mathrm{NbTe}}_{2}$ crystals in transmission electron microscopy measurements.

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been emerged as a new class of van der Waals materials since the successful isolation of graphene. The strong spin-orbit coupling (SOC) and two-dimensionality give rise to plenty of novel physics including metal-insulator transition, charge density wave (CDW), valleytronics, quantum spin Hall effect, and unconventional superconductivity, which make TMDCs an ideal platform to study the fundamental physics and potential applications. In this review, we firstly introduce the crystal structure of 2D TMDCs materials. Then, we summarize the recent progress in the synthesis, novel physical properties, and applications of 2D TMDCs materials. Finally, a summary and an outlook on the topological superconductivity in this field are presented. 2D TMDCs have a chemical formula of MX2 (M=W, Mo and X=Te, Se, S) with a layered crystal structure. Depending on the coordination environments of M, TMDCs can crystallize in a variety of polytypic structures such as 2 H , 1 T , 1 T ′, and T d phases. In the monolayer 2 H -TMDCs, the breaking of an in-plane mirror symmetry and the presence of the out-of-plane mirror symmetry lead to an Ising spin–orbit coupling (SOC), which serves as an effective out-of-plane field acting on the copper pair and pins the electron spins to out-of-plane directions. This is called Ising superconductivity, which has been observed in gated MoS2, monolayer NbSe2 and TaS2. However, due to the inversion symmetry in monolayer 1 T ′-TMDCs, the introduction of SOC makes them a class of large-gap quantum spin Hall insulators such as monolayer 1 T ′-WTe2. Therefore, if we could consecutively tailor the TMDCs’ structure from 2 H to T d phase, the long-sought topological superconductivity may be realized in one substance by incorporating superconductivity and quantum spin Hall effect together. To explore the extraordinary physics and nanodevice applications, we develop a universal molten-salt-assisted chemical vapor deposition (CVD) method to prepare atomically thin TMDCs, including high-quality 2D superconductors such as monolayer MoTe2 and NbSe2. With the powerful sample growth technique , we demonstrate for the first time that a consecutive structural phase transition from T d to 1 T ′ to 2 H polytype can be realized by increasing the Se concentration in Se-substituted MoTe2. More importantly, the Se-substitution is found to dramatically enhance the superconductivity of the MoTe2 thin film, which is interpreted as the introduction of two-band superconductivity. Furthermore, in bilayer 1 T d-MoTe2, we find that the in-plane upper critical field goes beyond the Pauli paramagnetic limit and shows an emergent two-fold symmetry, which is different from the isotropic in-plane upper critical field in 2 H -TMDCs. We show that this is a result of a new type of asymmetric SOC in 1 T d-TMDCs, which has expanded the well-known Ising SOC. The polytypic structures and strong SOC in 2D TMDCs have led to a variety of novel physics and applications. Recent theoretical works have already shown that 2D TMDCs can be a platform to search for topological superconductivity. With the further development of sample preparation, 2D TMDCs will play an important role in realization of topological quantum computation.

Systematic electrical transport characterizations were performed on high-quality Bi2O2Se nanowires to illustrate its great transport properties and further application potentials in spintronics. Bi2O2Se nanowires synthesized by chemical vapor deposition method presented a high field-effect mobility up to 1.34*104 cm2V-1s-1, and exhibited ballistic transport in the low back-gate voltage (Vg) regime where conductance plateaus were observed. When further increasing the electron density by increasing Vg, we entered the phase coherent regime and weak antilocalization (WAL) was observed. The spin relaxation length extracted from the WAL was found to be gate tunable, ranging from ~100 nm to ~250 nm and reaching a stronger spin-obit coupling (SOC) than the two-dimensional counterpart (flakes). We attribute the strong SOC and the gate tunability to the presence of a surface accumulation layer which induces a strong inversion asymmetry on the surface. Such scenario was supported by the observation of two Shubnikov-de Haas oscillation frequencies that correspond to two types of carriers, one on the surface, and the other in the bulk. The high-quality Bi2O2Se nanowires with a high mobility and a strong SOC can act as a very prospective material in future spintronics., 22 pages, 7 figures

Recently, a Corbino-geometry type of Josephson junction constructed on the surface of topological insulators has been proposed for hosting and braiding Majorana zero modes. As a first step to test this proposal, we successfully fabricated Corbino-geometry Josephson junctions (JJs) on the surface of Bi2Te3 flakes. Ac Josephson effect with fractional Shapiro steps was observed in the Corbino-geometry JJs while the flux in the junction area was quantized. By analyzing the experimental data using the resistively shunted Josephson junction model, we found that the Corbino-geometry JJs exhibit a skewed current–phase relation due to its high transparency. The results suggest that Corbino-geometry JJs constructed on the surface of topological insulators may provide a promising platform for studying Majorana-related physics.

Weyl nodes and Fermi arcs in type-II Weyl semimetals (WSMs) have led to lots of exotic transport phenomena. Recently, ${\mathrm{Mo}}_{0.25}{\mathrm{W}}_{0.75}{\mathrm{Te}}_{2}$ has been established as a type-II WSM with Weyl points located near Fermi level, which offers an opportunity to study its intriguing band structure by electrical transport measurements. Here, by selecting a special sample with the thickness gradient across two- (2D) and three-dimensional (3D) regimes, we show strong evidence that ${\mathrm{Mo}}_{0.25}{\mathrm{W}}_{0.75}{\mathrm{Te}}_{2}$ is a type-II Weyl semimetal by observing the following two dimensionality-dependent transport features: (1) a chiral-anomaly-induced anisotropic magnetoconductivity enhancement, proportional to the square of in-plane magnetic field (${B}_{\mathrm{in}}^{2}$); and (2) an additional quantum oscillation with thickness-dependent phase shift. Our theoretical calculations show that the observed quantum oscillation originates from a Weyl-orbit-like scenario due to the unique band structure of ${\mathrm{Mo}}_{0.25}{\mathrm{W}}_{0.75}{\mathrm{Te}}_{2}$. The in situ dimensionality-tuned transport experiment offers an alternative strategy to search for type-II WSMs.

Recently, new states of matter like superconducting or topological quantum states were found in transition metal dichalcogenides (TMDs) and manifested themselves in a series of exotic physical behaviors. Such phenomena have been demonstrated to exist in a series of transition metal tellurides including MoTe

We studied anomalous Josephson effect (AJE) in Josephson trijunctions fabricated on Bi$_2$Se$_3$, and found that the AJE in T-shaped trijunctions significantly alters the Majorana phase diagram of the trijunctions, when an in-plane magnetic field is applied parallel to two of the three single junctions. Such a phenomenon in topological insulator-based Josephson trijunction provides unambiguous evidence for the existence of AJE in the system, and might provide an additional knob for controlling the Majorana bound states in the Fu-Kane scheme of topological quantum computation., Comment: 6 pages, 3 figures

Andreev bound states (ABSs), as a close resemblance and a prototype of Majorana bound states, attracted particular interest in semiconductor-superconductor hybrids. So far, ABSs were explored as an equilibrium behavior employing tunneling spectroscopy. Under nonequilibrium, theorists did predict that the local density of states (DOS) of the ABSs split and broaden. We investigated an InAsSb quantum dot coupled to two superconductors to explore the nonequilibrium dynamics of ABSs and their interplay with Kondo effect. Through tunneling spectroscopy, we demonstrated a full picture of the nonequilibrium dynamic splitting and broadening of ABSs, which interplays with the nonequilibrium Kondo DOS. Since the observed features might mimic those in the normal superconductor-topological superconductor or Majorana junctions, our discovery could provide a relevant comparison to benchmark the Majorana signal in future experiments.

Introduction of spin-orbit coupling (SOC) in a Josephson junction (JJ) gives rise to unusual Josephson effects. We investigate JJs based on a newly discovered heterodimensional superlattice V$_5$S$_8$ with a special form of SOC. The unique homointerface of our JJs enables elimination of extrinsic effects due to interfaces and disorder. We observe asymmetric Fraunhofer patterns with respect to both the perpendicular magnetic field and the current. The asymmetry is influenced by an in-plane magnetic field. Analysis of the pattern points to a nontrivial spatial distribution of the Josephson current that is intrinsic to the SOC in V$_5$S$_8$., 15 pages,5 figures

We report on the successful synthesis and low-temperature electron transport investigations of a new form of material---$\mathrm{B}{\mathrm{i}}_{2}{\mathrm{O}}_{2}\mathrm{Se}$ semiconducting nanowires. Gate-tunable 0- and $\ensuremath{\pi}\text{\ensuremath{-}}h/e\phantom{\rule{4pt}{0ex}}(h$ is the Planck constant and $e$ the elementary charge) periodic resistance oscillations in longitudinal magnetic field were observed unexpectedly, demonstrating novel quasiballistic, phase-coherent surface states in $\mathrm{B}{\mathrm{i}}_{2}{\mathrm{O}}_{2}\mathrm{Se}$ nanowires. By reaching a very good agreement between the calculated density of states and the experimental data, we clarified the mechanism to be the one-dimensional subbands formed along the circumference of the nanowire rather than the usually considered Aharonov-Bohm interference. A qualitative physical picture based on downward band bending associated with the complex band structure is proposed to describe the formation of the surface states.

We carried out a phase-sensitive experiment on Josephson trijunctions constructed on the surface of three-dimensional topological insulator ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$. Through local flux contol and contact resistance measurement, we observed that the minigap at the ends of the trijunctions approaches zero linearly with varying phase difference and closes completely at $\ensuremath{\pi}$ phase difference. The minigap at the center of the trijunction is protected to close over extended regions in phase space. These results agree with the theory by Fu and Kane [Phys. Rev. Lett. 100, 096407 (2008)].

Recently, a contact-resistance-measurement method was developed to detect the minigap, hence the Andreev bound states (ABSs), in Josephson junctions constructed on the surface of three-dimensional topological insulators (3D TIs). In this work, we further generalize that method to the circumstance with radio frequency (rf) irradiation. We find that with the increase of the rf power, the measured minigap becomes broadened and extends to higher energies in a way similar to the rf power dependence of the outer border of the Shapiro step region. We show that the corresponding data of contact resistance under rf irradiation can be well interpreted by using the resistively shunted Josephson junction (RSJ) model and the Blonder–Tinkham–Klapwijk (BTK) theory. Our findings could be useful when using the contact-resistance-measurement method to study the Majorana-related physics in topological insulator-based Josephson junctions under rf irradiation.

Consecutively tailoring few-layer transition metal dichalcogenides MX

Twisting two layers into a magic angle (MA) of ~1.1{\deg} is found essential to create low energy flat bands and the resulting correlated insulating, superconducting, and magnetic phases in twisted bilayer graphene (TBG). While most of previous works focus on revealing these emergent states in MA-TBG, a study of the twist angle dependence, which helps to map an evolution of these phases, is yet less explored. Here, we report a magneto-transport study on one non-magic angle TBG device, whose twist angle {\theta} changes from 1.25{\deg} at one end to 1.43{\deg} at the other. For {\theta}=1.25{\deg}, we observe an emergence of topological insulating states at hole side with a sequence of Chern number |C|=4-|v|, where v is the number of electrons (holes) in moir\'e unite cell. When {\theta}>1.25{\deg}, the Chern insulator from flat band disappears and evolves into fractal Hofstadter butterfly quantum Hall insulator where magnetic flux in one moir\'e unite cell matters. Our observations will stimulate further theoretical and experimental investigations on the relationship between electron interactions and non-trivial band topology., Comment: accepted in CPL express letter

On the road of searching for Majorana zero modes (MZMs) in topological insulator-based Josephson junctions, a highly sought signature is the protected full transparency of electron transport through the junctions due to the existence of the MZMs, associated with complete gap closing between the electronlike and holelike Andreev bound states (ABSs). Here we present direct experimental evidence of gap closing and full transparency in single Josephson junctions constructed on the surface of three-dimensional topological insulator (3D TI) ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$. Our results demonstrate that the two-dimensional (2D) surface of 3D TIs provides a promising platform for hosting and manipulating MZMs.

Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on nontopological InAs Josephson junctions. We observe a SQUID pattern, an indication of superconducting edge transport. Also, a remarkable h/e SQUID signal is observed that, as we find, stems from crossed Andreev states.

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) MX2 (M=W, Mo, Nb, and X=Te, Se, S) with strong spin-orbit coupling (SOC) possess plenty of novel physics including superconductivity. Due to the Ising SOC, monolayer NbSe$_2$ and gated MoS$_2$ of 2H structure can realize the Ising superconductivity phase, which manifests itself with in-plane upper critical field far exceeding Pauli paramagnetic limit. Surprisingly, we find that a few-layer 1Td structure MoTe$_2$ also exhibits an in-plane upper critical field ($H_{c2,//}$) which goes beyond the Pauli paramagnetic limit. Importantly, the in-plane upper critical field shows an emergent two-fold symmetry which is different from the isotropic $H_{c2,//}$ in 2H structure TMDCs. We show that this is a result of an asymmetric SOC in 1Td structure TMDCs. The asymmetric SOC is very strong and estimated to be on the order of tens of meV. Our work provides the first transport evidence of a new type of asymmetric SOC in TMDCs which may give rise to novel superconducting and spin transport properties. Moreover, our findings mostly depend on the symmetry of the crystal and apply to a whole class of 1Td TMDCs such as 1Td-WTe$_2$ which is under intense study due to its topological properties., 34 pages, 12 figures

There have been continuous efforts in searching for unconventional superconductivity in the past five decades. Compared to the well-established $d$-wave superconductivity in cuprates, the existence of superconductivity with pairing symmetries of other high angular momentum is less conclusive. Bi/Ni epitaxial bilayer is a potential unconventional superconductor with broken time reversal symmetry (TRS), for that it demonstrates superconductivity and ferromagnetism simultaneously at low temperatures. We employ a specially designed superconducting quantum interference device (SQUID) to detect, on the Bi/Ni bilayer, the orbital magnetic moments which are expected if the TRS is broken. An anomalous hysteretic magnetic response is indeed observed in the superconducting state, providing the evidence for the existence of chiral superconducting domains in the material.

The strong spin$-$orbit coupling (SOC) and numerous crystal phases in few$-$layer transition metal dichalcogenides (TMDCs) MX$_2$ (M$=$W, Mo, and X$=$Te, Se, S) has led to a variety of novel physics, such as Ising superconductivity and quantum spin Hall effect realized in monolayer 2H$-$ and Td$-$MX$_2$, respectively. Consecutive tailoring of the MX$_2$ structure from 2H to Td phase may realize the long$-$sought topological superconductivity in one material system by incorporating superconductivity and quantum spin Hall effect together. In this work, by combing Raman spectrum, X-ray photoelectron spectrum (XPS), scanning transmission electron microscopy imaging (STEM) as well as electrical transport measurements, we demonstrate that a consecutively structural phase transitions from Td to 1T$'$ to 2H polytype can be realized as the Se-substitution concentration increases. More importantly, the Se$-$substitution has been found to notably enhance the superconductivity of the MoTe$_2$ thin film, which is interpreted as the introduction of the two$-$band superconductivity. The chemical constituent induced phase transition offers a new strategy to study the s$_{+-}$ superconductivity and the possible topological superconductivity as well as to develop phase$-$sensitive devices based on MX$_2$ materials., 27 pages, 5 figures

We report on magnetoresistance, Hall effect, and quantum Shubnikov–de Haas oscillation (SdH) experiments in NbIrTe4 single crystals, which was recently predicted to be a type-II Weyl semimetal. NbIrTe4 manifests a non-saturating and parabolic magnetoresistance at low temperatures. The magneto-transport measurements show that NbIrTe4 is a multiband system. The analysis of the SdH oscillations reveals four distinct oscillation frequencies. Combined with the density-functional theory calculations, we show that they come from two types of Fermi surfaces: electron pocket E1 and hole pocket H2.

Three-dimensional topological insulators (3D TIs) represent novel states of quantum matters in which surface states are protected by time-reversal symmetry and an inversion occurs between bulk conduction- and valence-bands. However, the bulk-band inversion which is intimately tied to the topologically nontrivial nature of 3D TIs has rarely been investigated by experiments. Besides, 3D massive Dirac fermions with nearly near band dispersions were seldom observed in TIs. Recently, a van der Waals crystal, ZrTe5, was theoretically predicted to be a TI. Here, we report an infrared transmission study of a high-mobility (~33,000 cm$^2$/(Vs)) multilayer ZrTe5 flake at magnetic fields ($B$) up to 35 T. Our observation of a linear relationship between the zero-magnetic-field optical absorption and the photon energy, a bandgap of ~10 meV and a $\sqrt{B}$ dependence of the Landau level (LL) transition energies at low magnetic fields demonstrates 3D massive Dirac fermions with nearly linear band dispersions in this system. More importantly, the reemergence of the intra-LL transitions at magnetic fields higher than 17 T reveals the energy cross between the two zeroth LLs, which reflects the inversion between the bulk conduction- and valence-bands. Our results not only provide spectroscopic evidence for the TI state in ZrTe5 but also open up a new avenue for fundamental studies of Dirac fermions in van der Waals materials., magneto-infrared study, Landau level spectroscopy, published online in PNAS (2017)

Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by $\beta =$ 28.5 meV$\AA$ and the Rashba coefficient $\alpha$ is tuned from 75 to 53 meV$\AA$ by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations.

Due to a strong spin-orbit interaction and a large Land\'e g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1|=26) and out-of-plane (|g1|=52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands., Comment: 25 pages including Supporting Information

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.

Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electronlike and holelike states. Unlike conventional, noninverted two-dimensional electron gases, the Fermi energy in InAs/GaSb can cross a single spin-resolved band, resulting in full spin-orbit polarization. In the fully polarized regime we observe exotic transport phenomena such as quantum Hall plateaus evolving in e2/h steps and a nontrivial Berry phase.

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.

Our Hall bar shape device based on Bi2Se3 nano-plate was fabricated and studied at a dilution temperature with a tilted magnetic field up to 45 Tesla. It is found that, three types of carriers, one of three-dimensional (3D) and two of two-dimensional (2D), were identified by analyzing the angular dependence of Shubnikov-de Haas (SdH) oscillations, which confirmed the coexistence of bulk carriers and band bending induced two-dimensional electron gas in our transport experiment. The co-contributions to quantum oscillations indicated the independence of these states, without smearing out by scattering between each other, which may lay the foundations for detecting topological surface states (TSS) with residual bulk carriers in Bi2Se3.

The discovery of a new type-II Dirac semimetal in Ir1-x Ptx Te2 with optimized band structure is described. Pt dopants protect the crystal structure holding the Dirac cones and tune the Fermi level close to the Dirac point. The type-II Dirac dispersion in Ir1-x Ptx Te2 is confirmed by angle-resolved photoemission spectroscopy and first-principles calculations. Superconductivity is also observed and persists when the Fermi level aligns with the Dirac points. Ir1-x Ptx Te2 is an ideal platform for further studies on the exotic properties and potential applications of type-II DSMs, and opens up a new route for the investigation of the possible topological superconductivity and Majorana physics.

Solid-state quantum computation station belongs to the group 2 of manipulation of quantum state in the Synergetic Extreme Condition User Facility. Here we will first outline the research background, aspects, and objectives of the station, followed by a discussion of the recent scientific as well as technological progress in this field based on similar experimental facilities to be constructed in the station. Finally, a brief summary and research perspective will be presented.

Electrostatic gating is essential for defining and control of semiconducting devices. However, nano-fabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of materials that suffer from such degradation include ultra-high mobility GaAs/AlGaAs two-dimensional electron gases (2DEGs), graphene, topological insulators, and nanowires. To preserve the pristine material properties, we have developed a flip-chip setup where gates are separated from the material by a vacuum, which allows nanoscale electrostatic gating of the material without exposing it to invasive nano-processing. An additional benefit is the vacuum between gates and material, which, unlike gate dielectrics, is free from charge traps. We demonstrate the operation and feasibility of the flip-chip setup by achieving quantum interference at integer quantum Hall states in a Fabry-P\'erot interferometer based on a GaAs/AlGaAs 2DEG. Our results pave the way for the study of exotic phenomena including fragile fractional quantum Hall states by preserving the high quality of the material., Comment: 25 pages including Supporting Information

Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual gating. Furthermore, we show that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states.

We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resembling the predicted helical edge-channels in the topological regime. We characterize edge conduction in the trivial regime in a wide variety of sample geometries and measurement configurations, as a function of temperature, magnetic field, and edge length. Despite similarities to studies claiming measurements of helical edge channels, our characterization points to a non-topological origin for these observations.

Topological superconductivity is an exotic state of matter that supports Majorana zero-modes, which are surface modes in 3D, edge modes in 2D or localized end states in 1D. In the case of complete localization these Majorana modes obey non-Abelian exchange statistics making them interesting building blocks for topological quantum computing. Here we report superconductivity induced into the edge modes of semiconducting InAs/GaSb quantum wells, a two-dimensional topological insulator. Using superconducting quantum interference, we demonstrate gate-tuning between edge-dominated and bulk-dominated regimes of superconducting transport. The edge-dominated regime arises only under conditions of high-bulk resistivity, which we associate with the 2D topological phase. These experiments establish InAs/GaSb as a robust platform for further confinement of Majoranas into localized states enabling future investigations of non-Abelian statistics., Comment: 19 pages, 17 figures

We have studied the electron transport properties of topological insulator-related material Bi${}_{2}$Se${}_{3}$ near the superconducting Pb-Bi${}_{2}$Se${}_{3}$ interface, and found that a superconducting state is induced over an extended volume in Bi${}_{2}$Se${}_{3}$. This state can carry a Josephson supercurrent, and demonstrates a gaplike structure in the conductance spectra as probed by a normal-metal electrode. The establishment of the gap is not by confining the electrons into a narrow space close to the superconductor-normal metal interface, as previously observed in other systems, but presumably via electron-electron attractive interaction in Bi${}_{2}$Se${}_{3}$.

The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO(3) and SrTiO(3), provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm(2) V(-1) s(-1) (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO(3) and a spinel γ-Al(2)O(3) epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite two-dimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.