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Your search keyword '"Fang, Zixuan"' showing total 385 results
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385 results on '"Fang, Zixuan"'

23. Neoadjuvant chemotherapy plus camrelizumab for locally advanced cervical cancer (NACI study): a multicentre, single-arm, phase 2 trial

Author

Li, Kezhen, Chen, Jing, Hu, Yingjie, Wang, Yan-Zhou, Shen, Yuanming, Chen, Gang, Peng, Wenju, Fang, Zixuan, Xia, Bairong, Chen, Xiaojun, Song, Kun, Wang, Yingmei, Zou, Dongling, Wang, Yan-Chun, Han, Yingyan, Feng, Xue, Yuan, Jing, Guo, Shuaiqingying, Meng, Xiaolin, Feng, Chenzhao, Chen, Yin, Yang, Jie, Fan, Junpeng, Wang, Jianliu, Ai, Jihui, Ma, Ding, and Sun, Chaoyang

Published
2024
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24. Tunable room-temperature ferromagnetism in Co-doped two-dimensional van der Waals ZnO.

Author

Chen, Rui, Luo, Fuchuan, Liu, Yuzi, Song, Yu, Dong, Yu, Wu, Shan, Cao, Jinhua, Yang, Fuyi, N'Diaye, Alpha, Shafer, Padraic, Liu, Yin, Lou, Shuai, Huang, Junwei, Chen, Xiang, Fang, Zixuan, Wang, Qingjun, Jin, Dafei, Cheng, Ran, Yuan, Hongtao, Birgeneau, Robert J, and Yao, Jie

Abstract

The recent discovery of ferromagnetism in two-dimensional van der Waals crystals has provoked a surge of interest in the exploration of fundamental spin interaction in reduced dimensions. However, existing material candidates have several limitations, notably lacking intrinsic room-temperature ferromagnetic order and air stability. Here, motivated by the anomalously high Curie temperature observed in bulk diluted magnetic oxides, we demonstrate room-temperature ferromagnetism in Co-doped graphene-like Zinc Oxide, a chemically stable layered material in air, down to single atom thickness. Through the magneto-optic Kerr effect, superconducting quantum interference device and X-ray magnetic circular dichroism measurements, we observe clear evidences of spontaneous magnetization in such exotic material systems at room temperature and above. Transmission electron microscopy and atomic force microscopy results explicitly exclude the existence of metallic Co or cobalt oxides clusters. X-ray characterizations reveal that the substitutional Co atoms form Co2+ states in the graphitic lattice of ZnO. By varying the Co doping level, we observe transitions between paramagnetic, ferromagnetic and less ordered phases due to the interplay between impurity-band-exchange and super-exchange interactions. Our discovery opens another path to 2D ferromagnetism at room temperature with the advantage of exceptional tunability and robustness.

Published
2021

39. Tunable valleytronics with symmetry-retaining high polarization degree in SnSxSe1−x model system

Author

Lin, Shuren, Fang, Zixuan, Hou, Tingzheng, Hsu, Ting Wan, So, Chi H, Yeoh, Cher, Li, Roger, Liu, Yin, Chan, Emory M, Chueh, Yu-Lun, Tang, Bin, Persson, Kristin, and Yao, Jie

Subjects
Atomic, Molecular and Optical Physics, Physical Sciences, Engineering, Technology, Applied Physics, Physical sciences
Abstract

SnS has recently been shown to possess unique valleytronic capability with a large polarization degree, where non-degenerate valleys can be accessed using linearly polarized light, bestowed upon by the unique anisotropy and wavefunction symmetry. It is thus of utmost importance to demonstrate the extension of such effects for the IV-VI system in general, thereby elucidating the generality and tunability of such valleytronics. We show the highly tunable valleytronics via gradual compositional control of the tin(II) sulfo-selenide (SnSxSe1-x) alloy system with excellent retainment of symmetry-determined selection rules. We show the presence of both ΓY and ΓX valleys in all alloy compositions via selectivity in absorption and emission of linearly polarized light by optical reflection (R)/transmission (T) and photoluminescence measurements and tuned the bandgaps of the valleys within a range of 1.28 eV-1.05 eV and 1.48 eV-1.24 eV, respectively. This simultaneous tuning of non-degenerate valleys agrees well with theoretical calculations. We then fitted the bandgap values in compositional space, obtaining bowing parameters as a useful database. We further demonstrated the feasibility of using IV-VI valleytronics systems in general by elucidating the retainment of strong polarization degrees of as high as 91% across all compositions. The generalization of such purely symmetry-dependent valleytronics also opens up opportunities for the discovery of more multi-functional materials.

Published
2020

47. Helical van der Waals crystals with discretized Eshelby twist.

Author

Liu, Yin, Wang, Jie, Kim, Sujung, Sun, Haoye, Yang, Fuyi, Fang, Zixuan, Tamura, Nobumichi, Zhang, Ruopeng, Song, Xiaohui, Wen, Jianguo, Xu, Bo Z, Wang, Michael, Lin, Shuren, Yu, Qin, Tom, Kyle B, Deng, Yang, Turner, John, Chan, Emory, Jin, Dafei, Ritchie, Robert O, Minor, Andrew M, Chrzan, Daryl C, Scott, Mary C, and Yao, Jie

Subjects
MD Multidisciplinary, General Science & Technology
Abstract

The ability to manipulate the twisting topology of van der Waals structures offers a new degree of freedom through which to tailor their electrical and optical properties. The twist angle strongly affects the electronic states, excitons and phonons of the twisted structures through interlayer coupling, giving rise to exotic optical, electric and spintronic behaviours1-5. In twisted bilayer graphene, at certain twist angles, long-range periodicity associated with moiré patterns introduces flat electronic bands and highly localized electronic states, resulting in Mott insulating behaviour and superconductivity3,4. Theoretical studies suggest that these twist-induced phenomena are common to layered materials such as transition-metal dichalcogenides and black phosphorus6,7. Twisted van der Waals structures are usually created using a transfer-stacking method, but this method cannot be used for materials with relatively strong interlayer binding. Facile bottom-up growth methods could provide an alternative means to create twisted van der Waals structures. Here we demonstrate that the Eshelby twist, which is associated with a screw dislocation (a chiral topological defect), can drive the formation of such structures on scales ranging from the nanoscale to the mesoscale. In the synthesis, axial screw dislocations are first introduced into nanowires growing along the stacking direction, yielding van der Waals nanostructures with continuous twisting in which the total twist rates are defined by the radii of the nanowires. Further radial growth of those twisted nanowires that are attached to the substrate leads to an increase in elastic energy, as the total twist rate is fixed by the substrate. The stored elastic energy can be reduced by accommodating the fixed twist rate in a series of discrete jumps. This yields mesoscale twisting structures consisting of a helical assembly of nanoplates demarcated by atomically sharp interfaces with a range of twist angles. We further show that the twisting topology can be tailored by controlling the radial size of the structure.

Published
2019

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