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Brain-inspired computing architectures attempt to emulate the computations performed in the neurons and the synapses in human brain. Memristors with continuously tunable resistances are ideal building blocks for artificial synapses. Through investigating the memristor behaviors in a La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junction, it was found that the ferroelectric domain dynamics characteristics are influenced by the relative magnetization alignment of the electrodes, and the interfacial spin polarization is manipulated continuously by ferroelectric domain reversal, enriching our understanding of the magnetoelectric coupling fundamentally. This creates a functionality that not only the resistance of the memristor but also the synaptic plasticity form can be further manipulated, as demonstrated by the spike-timing-dependent plasticity investigations. Density functional theory calculations are carried out to describe the obtained magnetoelectric coupling, which is probably related to the Mn-Ti intermixing at the interfaces. The multiple and controllable plasticity characteristic in a single artificial synapse, to resemble the synaptic morphological alteration property in a biological synapse, will be conducive to the development of artificial intelligence., Comment: 5 figures, 20 pages

Functionalities in crystalline materials are determined by 3-dimensional collective interactions of atoms. The confinement of dimensionality in condensed matter provides an exotic research direction to understand the interaction of atoms, thus can be used to tailor or create new functionalities in material systems. In this study, a 2-dimensional transition metal oxide monolayer is constructed inside complex oxide heterostructures based on the theoretical predictions. The electrostatic boundary conditions of oxide monolayer in the heterostructure is carefully designed to tune the chemical, electronic, and magnetic states of oxide monolayer. The challenge of characterizing such an oxide monolayer is overcome by a combination of transmission electron microscopy, x-ray absorption spectroscopy, cross-sectional scanning tunneling microscopy, and electrical transport measurements. An intriguing metal-insulator transition associated with a magnetic transition is discovered in the MnO2 monolayer. This study paves a new route to understand the confinement of dimensionality and explore new intriguing phenomena in condensed matters., Comment: 23 pages, 6 figures

Metal-stuffed B-C compounds with sodalite clathrate structure have captured increasing attention due to their predicted exceptional superconductivity above liquid nitrogen temperature at ambient pressure. However, by neglecting the quantum lattice anharmonicity, the existing studies may result in an incomplete understanding of such a lightweight system. Here, using state-of-the-art *ab initio* methods incorporating quantum effects and machine learning potentials, we revisit the properties of a series of $XY\text{B}_{6}\text{C}_{6}$ clathrates where $X$ and $Y$ are metals. Our findings show that ionic quantum and anharmonic effects can harden the $E_g$ and $E_u$ vibrational modes, enabling the dynamical stability of 15 materials previously considered unstable in the harmonic approximation, including materials with previously unreported $(XY)^{1+}$ state, which is demonstrated here to be crucial to reach high critical temperatures. Further calculations based on the isotropic Migdal-Eliashberg equation demonstrate that the $T_c$ values for $\text{KRbB}_{6}\text{C}_{6}$ and $\text{RbB}_{3}\text{C}_{3}$ among these stabilized compounds are 87 and 98 K at 0 and 15 GPa, respectively, both being higher than $T_c$ of 77 K of $\text{KPbB}_{6}\text{C}_{6}$ at the anharmonic level. These record-high $T_c$ values, surpassing liquid nitrogen temperatures, emphasize the importance of anharmonic effects in stabilizing B-C clathrates with large electron-phonon coupling strength and advancing the search for high-$T_c$ superconductivity at (near) ambient pressure.

The rare physical property of negative thermal expansion (NTE) is intriguing because materials with large NTE over a wide temperature range can serve as high-performance thermal expansion compensators. However, applications of NTE are hindered by the fact that most of the available NTE materials show small magnitudes of NTE, and/or NTE occurs only in a narrow temperature range. Herein, for the first time, we investigated the effect of anion substitution instead of general Pb/Ti-site substitutions on the thermal expansion properties of a typical ferroelectric NTE material, PbTiO3. Intriguingly, the substitution of S for O in PbTiO3 further increases the tetragonality of PbTiO3. Consequently, an unusually enhanced NTE with an average volumetric coefficient of thermal expansion $\bar{\alpha}_V$ = -2.50 $\times$ 10$^{-5}$/K was achieved over a wide temperature range (300 -- 790 K), which is contrasted to that of pristine PbTiO3 ($\bar{\alpha}_V$ = -1.99 $\times$ 10$^{-5}$/K RT -- 763 K). The intensified NTE is attributed to the enhanced hybridization between Pb/Ti and O/S atoms by the substitution of S, as evidenced by our theoretical investigations. We therefore demonstrate a new technique for introducing mixed anions to achieve large NTE over a wide temperature range in PbTiO3-based ferroelectrics., Comment: 14 pages, 4 figures

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair-driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices., Comment: preprint, 27 pages, 5 figures

Barium hydrides are of interest for their potential in both ionic conductivity and superconductivity. Recently, a superconducting hydride BaH12 containing H$_2$ and H${_3}^{-1}$ molecular units was experimentally reported with a critical temperature $T_\text{c}$ of 20 K at 140 GPa. Herein, we combine ab initio methods with a rapid calculator of $T_\text{c}$ based on the networking value model to predict that the introduction of light elements, such as Be, can effectively expand the structure diversity and structure space of barium hydrides. Although molecular hydrogen units are still widely present in thermodynamically stable and metastable crystal structures, we find that a metastable phase of BeBaH8 shows a higher $T_\text{c}$ of 49 K than BaH12 at a reduced pressure of 100 GPa. This BeBaH8 remains dynamically stable at 15 GPa. Furthermore, our study shows that increasing pressure can further elevate $T_\text{c}$ beyond 100 K by enhancing the electron-phonon coupling constant. Our study proposes a feasible method for broadening the structural landscape in the exploration of superconducting phases of barium hydrides., Comment: 18 pages, 5 figures

Symmetry is a cornerstone of condensed matter physics, fundamentally shaping the behavior of electronic systems and inducing the emergence of novel phenomena. The Hall effect, a key concept in this field, demonstrates how symmetry breaking, particularly of time-reversal symmetry, influences electronic transport properties. Recently, the nonlinear Hall effect has extended this understanding by generating a transverse voltage that modulates at twice the frequency of the driving alternating current without breaking time-reversal symmetry. This effect is closely tied to the symmetry and quantum geometric properties of materials, offering a new approach to probing the Berry curvature and quantum metric. Here, we provide a review of the theoretical insights and experimental advancements in the nonlinear Hall effect, particularly focusing on its realization in two-dimensional materials. We discuss the challenges still ahead, look at potential applications for devices, and explore how these ideas might apply to other nonlinear transport phenomena. By elucidating these aspects, this review aims to advance the understanding of nonlinear transport effects and their broader implications for future technologies., Comment: 39 pages, 6 figures

Recent predictions of metastable high-temperature hydride superconductors give hope that superconductivity at ambient conditions is within reach. In this work, we predict RbPH$_3$ as a new compound with a superconducting critical temperature around 100 K at ambient pressure, dynamically stabilized thanks to ionic quantum anharmonic effects. RbPH$_3$ is thermodynamically stable at 30 GPa in a perovskite $Pm\bar{3}m$ phase, allowing its experimental synthesis at moderate pressures far from the megabar regime. With lowering pressure it is expected to transform to a $R3m$ phase that should stay dynamically stable thanks to quantum fluctuations down to ambient pressures. Both phases are metallic, with the $R3m$ phase having three distinct Fermi surfaces, composed mostly of states with phosphorus and hydrogen character. The structures are held together by strong P-H covalent bonds, resembling the pattern observed in the high-temperature superconducting H$_3$S, with extra electrons donated by rubidium. These results demonstrate that quantum ionic fluctuations, neglected thus far in high-throughput calculations, can stabilize at ambient pressure hydride superconductors with a high critical temperature.

We employed a machine-learning assisted approach to search for superconducting hydrides under ambient pressure within an extensive dataset comprising over 150 000 compounds. Our investigation yielded around 50 systems with transition temperatures surpassing 20 K, and some even reaching above 70 K. These compounds have very different crystal structures, with different dimensionality, chemical composition, stoichiometry, and arrangement of the hydrogens. Interestingly, most of these systems displayed slight thermodynamic instability, implying that their synthesis would require conditions beyond ambient equilibrium. Moreover, we found a consistent chemical composition in the majority of these systems, which combines alkali or alkali-earth elements with noble metals. This observation suggests a promising avenue for future experimental investigations into high-temperature superconductivity within hydrides at ambient pressure.

The capacity to externally manipulate magnetic properties is highly desired from both fundamental and technological perspectives, particularly in the development of magnetoelectronics and spintronics devices. Here, using first-principles calculations, we have demonstrated the ability of controlling the magnetism of magnetized graphene monolayers by interfacing them with a two-dimensional ferroelectric material. When the 3$d$ transition metal (TM) is adsorbed on the graphene monolayer, its magnetization easy axis can be flipped from in-plane to out-of-plane by the ferroelectric polarization reversal of In$_2$Se$_3$, and the magnetocrystalline anisotropy energy (MAE) can be high to -0.692 meV/atom when adopting the Fe atom at bridge site with downward polarization. This may be a universal method since the 3$d$ TM-adsorbed graphene has a very small MAE, which can be easily manipulated by the ferroelectric polarization. As a result, the inherent mechanism is analyzed by second variation method., Comment: 17 pages, 10 figures in main text

Rapidly increasing interest in low-dimensional materials is driven by the emerging requirement to develop nanoscale solid-state devices with novel functional properties that are not available in three-dimensional bulk phases. Among the well-known low-dimensional systems, complex transition metal oxide interface holds promise for broad applications in electronic and spintronics devices. Herein, intriguing metal-insulator and ferromagnetic-antiferromagnetic transitions are achieved in monolayer MnO$_2$ that is sandwiched into SrTiO$_3$-based heterointerface systems through interface engineering. By using first-principles calculations, we modeled three types of SrTiO$_3$-based heterointerface systems with different interface terminations and performed a comparative study on the spin-dependent magnetic and electronic properties that are established in the confined MnO$_2$ monolayer. First-principles study predicts that metal-insulator transition and magnetic transition in the monolayer MnO$_2$ are independent on the thickness of capping layers. Moreover, 100$\%$ spin-polarized two-dimensional electron gases accompanied by robust room temperature magnetism are uncovered in the monolayer MnO$_2$. Not only is the buried MnO$_2$ monolayer a new interface phase of fundamental physical interest, but it is also a promising candidate material for nanoscale spintronics applications. Our study suggests interface engineering at complex oxide interfaces is an alternative approach to designing high-performance two-dimensional materials., Comment: 24 pages, 7 figures

The recent report of near-ambient conditions superconductivity in a nitrogen-doped lutetium hydride has inspired a large number of experimental studies with contradictory results. We model from first principles the physical properties of the possible parent structures of the reported superconductor, LuH$_2$ and LuH$_3$. We show that only the phonon band structure of LuH$_3$ can explain the reported Raman spectra due to the presence of hydrogens at the interstitial octahedral sites. However, this structure is stabilized by anharmonicity only above 6 GPa. We find that the intriguing color change with pressure in the reported superconductor is consistent with the optical properties of LuH$_2$, which are determined by the presence of an undamped interband plasmon. The plasmon blue-shifts with pressure and modifies the color of the sample without requiring any structural phase transition. Our findings suggest that the main component in the experiments is LuH$_2$ with some extra hydrogen atoms at octahedral sites. None of LuH$_2$ and LuH$_3$ superconduct at high temperatures.

Using first-principles calculations we examine the crystal structures and phase transitions of nitride perovskite LaWN$_3$. Lattice dynamics calculations indicate that the ground-state structure belongs to space group $R3c$. Two competitive phase transition pathways are identified which are characterized by symmetry-adapted distortion modes. The results suggest that $R3c$ LaWN$_3$ should be an excellent ferroelectric semiconductor: its large spontaneous polarization of around 61 $\mu$C/cm$^2$ is comparable to that of PbTiO$_3$, and its band gap is about 1.72 eV. Ferroelectricity is found to result from the \emph{B}-site instability driven by hybridization between W-5$d$ and N-2$p$ orbitals. These properties make LaWN$_3$ an attractive candidate material for use in ferroelectric memory devices and photovoltaic cells., Comment: 13 pages, 8 figures in main text and 5 figures in supplementary

Helium, the second most abundant element in the universe, exhibits an extremely large electronic band gap of about $20$ eV at low pressures ($\le 0.1$ GPa). While the metallization pressure of hcp helium has been accurately predicted, thus far little attention has been paid to the specific mechanisms driving the band-gap closure and electronic properties of this quantum crystal in the terapascal regime (1 TPa $= 1,000$ GPa). Here, we employ state-of-the-art density functional theory and many-body perturbation theory calculations to fill up this knowledge gap. It is found that prior to reaching metallicity bulk solid helium becomes an excitonic insulator (EI), an exotic state of matter typically observed in low-dimensional systems in which electrostatically bound electron-hole pairs form spontaneously. Furthermore, it is shown that electron-phonon coupling (EPC) is significantly enhanced across the EI to metal phase transition as signaled by prominent phonon softening and giant EPC strength values ($\lambda \sim 10-100$) estimated at specific reciprocal space points. Accordingly, we predict metallic helium to be a superconductor with a critical temperature of $\approx 30$ K at $20$ TPa and of $\approx 100$ K at $100$ TPa. These unforeseen phenomena have important consequences on the elastic, thermodynamic and transport properties of metallic helium hence may be critical for improving our fundamental understanding and modelling of celestial bodies., Comment: 25 pages, 18 figures

Pb$_2$CoOsO$_6$ is a newly synthesized polar metal in which inversion symmetry is broken by the magnetic frustration in an antiferromagnetic ordering of Co and Os sublattices. The coupled magnetic and structural transition occurs at 45 K at ambient pressure. Here we perform transport measurements and first-principles calculations to study the pressure effects on the magnetic/structural coupled transition of Pb$_2$CoOsO$_6$. Experimentally we monitor the resistivity anomaly at $T_N$ under various pressures up to 11 GPa in a cubic anvil cell apparatus. We find that $T_N$ determined from the resistivity anomaly first increases quickly with pressure in a large slope of $dT_N/dP$ = +6.8(8) K/GPa for $P < 4$ GPa, and then increases with a much reduced slope of 1.8(4) K/GPa above 4 GPa. Our first-principles calculations suggest that the observed discontinuity of $dT_N/dP$ around 4 GPa may be attributed to the vanishing of Os magnetic moment under pressure. Pressure substantially reduces the Os moment and completely suppresses it above a critical value, which relieves the magnetic frustration in the antiferromagnetic ordering of Pb$_2$CoOsO$_6$. The Co and Os polar distortions decrease with the increasing pressure and simultaneously vanish at the critical pressure. Therefore above the critical pressure a new centrosymmetric antiferromagnetic state emerges in Pb$_2$CoOsO$_6$, distinct from the one under ambient pressure, thus showing a discontinuity in $dT_N/dP$., Comment: 17 pages, 6 figures

The recent discovery of a nonsaturating linear magnetoresistance in several correlated electron systems near a quantum critical point has revealed an interesting interplay between the linear magnetoresistance and the zero-field linear-in-temperature resistivity. These studies suggest a possible role of quantum criticality on the observed linear magnetoresistance. Here, we report our discovery of a nonsaturating, linear magnetoresistance in Mo$_8$Ga$_{41}$, a nearly isotropic strong electron-phonon coupling superconductor with a linear-in-temperature resistivity from the transition temperature to $\sim$55 K. The growth of the resistivity in field is comparable to that in temperature, provided that both quantities are measured in the energy unit. Our datasets are remarkably similar to magnetoresistance data of the optimally doped La$_{2-x}$Sr$_x$CuO$_4$, despite the clearly different crystal and electronic structures, and the apparent absence of quantum critical physics in Mo$_8$Ga$_{41}$. A new empirical scaling formula is developed, which is able to capture the key features of the low-temperature magnetoresistance data of Mo$_8$Ga$_{41}$, as well as the data of La$_{2-x}$Sr$_x$CuO$_4$., Comment: 7 pages, 3 figures

Frustrated magnets are one class of fascinating materials that host many intriguing phases such as spin ice, spin liquid and complex long-range magnetic orderings at low temperatures. In this work we use first-principles calculations to find that in a wide range of magnetically frustrated oxides, at zero temperature a number of non-collinear magnetic orderings are more stable than the type-I collinear ordering that is observed at finite temperatures. The emergence of non-collinear orderings in those complex oxides is due to higher-order exchange interactions that originate from second-row and third-row transition metal elements. This implies a collinear-to-noncollinear spin transition at sufficiently low temperatures in those frustrated complex oxides. Furthermore, we find that in a particular oxide Ba$_2$YOsO$_6$, experimentally feasible uniaxial strain can tune the material between two different non-collinear magnetic orderings. Our work predicts new non-collinear magnetic orderings in frustrated complex oxides at very low temperatures and provides a mechanical route to tuning complex non-collinear magnetic orderings in those materials., Comment: 19 pages and 9 figures in main text; 5 pages and 1 figure in supporting information

Intrinsic polar metals are rare, especially in oxides, because free electrons screen electric fields in a metal and eliminate the internal dipoles that are needed to break inversion symmetry. Here we use first-principles high-throughput structure screening to predict a new polar metal in bulk and thin film forms. After screening more than 1000 different crystal structures, we find that ordered BiPbTi2O6 can crystallize in three polar and metallic structures, which can be transformed between via pressure or strain. In a heterostructure of layered BiPbTi2O6 and PbTiO3, multiple states with different relative orientations of BiPbTi2O6 polar displacements, and PbTiO3 polarization, can be stabilized. At room temperature, the interfacial coupling enables electric fields to first switch PbTiO3 polarization and subsequently drive 180{\deg} change of BiPbTi2O6 polar displacements. At low temperatures, the heterostructure provides a tunable tunnelling barrier and might be used in multi-state memory devices., Comment: Full text is available free of charge at Communications Materials. 46 pages in total: 25 pages, 1 table and 7 figures in the main text; 23 pages, 2 tables, and 11 figures in the supplementary materials

Ferroelectric tunnel junctions, in which ferroelectric polarization and quantum tunneling are closely coupled to induce the tunneling electroresistance (TER) effect, have attracted considerable interest due to their potential in non-volatile and low-power consumption memory devices. The ferroelectric size effect, however, has hindered ferroelectric tunnel junctions from exhibiting robust TER effect. Here, our study proposes doping engineering in a two-dimensional in-plane ferroelectric semiconductor as an effective strategy to design a two-dimensional ferroelectric tunnel junction composed of homostructural $p$-type semiconductor/ferroelectric/$n$-type semiconductor. Since the in-plane polarization persists in the monolayer ferroelectric barrier, the vertical thickness of two-dimensional ferroelectric tunnel junction can be as thin as monolayer. We show that the monolayer In:SnSe/SnSe/Sb:SnSe junction provides an embodiment of this strategy. Combining density functional theory calculations with non-equilibrium Green's function formalism, we investigate the electron transport properties of In:SnSe/SnSe/Sb:SnSe and reveal a giant TER effect of 1460$\%$. The dynamical modulation of both barrier width and barrier height during the ferroelectric switching are responsible for this giant TER effect. These findings provide an important insight towards the understanding of the quantum behaviors of electrons in materials at the two-dimensional limit, and enable new possibilities for next-generation non-volatile memory devices based on flexible two-dimensional lateral ferroelectric tunnel junctions., Comment: ACS Editors' choice, full text is available free of charge at ACS Applied Electronic Materials DOI: 10.1021/acsaelm.9b00146; 20 pages, 5 figures in main text; 15 pages, 10 figures in supporting information

LiOsO$_3$ undergoes a continuous transition from a centrosymmetric $R\bar{3}c$ structure to a polar $R3c$ structure at $T_s=140$~K. By combining transport measurements and first-principles calculations, we find that $T_s$ is enhanced by applied pressure, and it reaches a value of $\sim$250~K at $\sim$6.5~GPa. The enhancement is due to the fact that the polar $R3c$ structure of LiOsO$_3$ has a smaller volume than the centrosymmetric $R\bar{3}c$ structure. Pressure generically favors the structure with the smallest volume, and therefore further stabilizes the polar $R3c$ structure over the $R\bar{3}c$ structure, leading to the increase in $T_s$., Comment: 5 pages and 4 figures

Among the interfacial transport modulations to the LaAlO3/SrTiO3 (LAO/STO) heterostructure, mechanical strain has been proven to be an effective approach by growing the LAO/STO films on different substrates with varying lattice mismatches to STO. However, this lattice-mismatch-induced strain effect is static and biaxial, hindering the study of the strain effect in a dynamic way. In this work we realize dynamic and uniaxial strain to the LAO/STO oxide heterostructure at low temperature, through mechanical coupling from a magnetostrictive template. This anisotropic strain results in symmetry breaking at the interface and induces further splitting of the electronic band structure and therefore produces different conductivities along the x and y in-plane directions. In particular, we observe that along the strained direction the interface conductivity decreases by up to 70% under a tensile strain, while it increases by 6.8% under a compressive strain at 2 K. Also, it is revealed that the modulation on the interfacial transport property can be anisotropic, i.e., the resistance changes differently when an excitation current is parallel or perpendicular to the strain direction. This approach of strain engineering provides another degree of freedom for control of transport properties of oxide heterostructures and opens an additional way to investigate strain effects in materials science., Comment: 21 pages. 9 figures, main manuscript plus supporting information

Highly ordered Bi2FeMnO6 epitaxial thin films have been successfully grown on SrTiO3 substrate. Both synchrotron X-ray reciprocal space mapping and high resolution transmission electron microscopy confirmed the alternative alignment of Fe and Mn along [111] direction of Bi2FeMnO6 films. Magnetic and ferroelectric properties of Bi2FeMnO6 films are characterized and analyzed. The room-temperature ferroelectricity is well kept in Bi2FeMnO6 film as expected. However, it is very interesting that Bi2FeMnO6 film exhibits a typical spin-glass behavior and very weak magnetism rather than a ferri/ferromagnetism as generally believed. Our first-principles calculations suggest a spin frustration model for Bi2FeMnO6, which can well explain the intriguing magnetic property of Bi2FeMnO6 film., Comment: Main text: 30 pages and 14 figures

Multiferroics are materials where two or more ferroic orders coexist owing to the interplay between spin, charge, lattice and orbital degrees of freedom. The explosive expansion of multiferroics literature in recent years demon-strates the fast growing interest in this field. In these studies, the first-principles calculation has played a pioneer role in the experiment explanation, mechanism discovery and prediction of novel multiferroics or magnetoelectric materials. In this review, we discuss, by no means comprehensively, the extensive applications and successful achievements of first-principles approach in the study of multiferroicity, magnetoelectric effect and tunnel junc-tions. In particular, we introduce some our recently developed methods, e.g., the orbital selective external potential (OSEP) method, which prove to be powerful tools in the finding of mechanisms responsible for the intriguing phe-nomena occurred in multiferroics or magnetoelectric materials. We also summarize first-principles studies on three types of electric control of magnetism, which is the common goal of both spintronics and multiferroics. Our review offers in depth understanding on the origin of ferroelectricity in transition metal oxides, and the coexistence of fer-roelectricity and ordered magnetism, and might be helpful to explore novel multiferroic or magnetoelectric materi-als in the future., Comment: 44 pages, 30 figures. Review paper