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In the era of big data, the necessity for in-memory computing has become increasingly pressing, rendering memristors a crucial component in next-generation computing architectures. The self-rectifying memristor (SRM), in particular, has emerged as a promising solution to mitigate the sneak path current issue in crossbar architectures. In this work, a Pt/HfO2/WO3−x/TiN SRM structure is reported with an impressive rectification ratio above 106. To elucidate the underlying mechanisms, we systematically investigate the impact of the WO3−x resistive layer thickness modulation on the device's conductive behavior. Our findings reveal that the abundant traps in the WO3−x resistive layer and the excellent insulating property of HfO2 synergistically suppress negative current while promoting positive current. According to the simulation, the crossbar array based on the proposed SRMs can realize an array scale of over 21 Gbit. Furthermore, artificial synapses fabricated using these SRMs demonstrate a remarkable linearity of 0.9973. In conclusion, our results underscore the great potential of these SRMs for the ultra-large-scale integration of neuromorphic hardware, providing a guide for future ultra-high-energy efficiency hardware with minimal circuit overhead. [ABSTRACT FROM AUTHOR]

The increasing sophistication of cybersecurity threats, driven by the proliferation of big data and the Internet of Things (IoT), necessitates the development of advanced real-time intrusion detection systems (IDSs). In this study, we present a novel approach that integrates NiO-doped WO 3- x /ZnO bilayer self-rectifying memristors (SRMs) within a reservoir computing (RC) framework for IDS applications. The proposed crossbar array architecture exploits the exceptional dynamic properties of SRMs, achieving a classification accuracy of 93.07% on the CSE-CIC-IDS2018 data set, while demonstrating ultrahigh information-processing efficiency. Our approach not only leverages the tunable characteristics of memristors but also addresses the challenge of sneak path currents in large-scale integration, offering a robust and scalable solution for next-generation IDS. This work exemplifies the power of emerging electronics in enhancing cybersecurity through innovative hardware implementations.