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16 results on '"Facoetti, H."'

1. QWIP Status at THALES

Author

Costard, E., Nedelcu, A., Truffer, J.P., Huet, O., Dua, L., Robo, J.A., Marcadet, X., Brière de l’Isle, N., Facoetti, H., and Bois, P.

Published
2009
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2. Performance of the QWIP Focal Plane Arrays for NASA's Landsat Data Continuity Mission

Author

Jhabvala, M, Choi, K, Waczynski, A, La, A, Sundaram, M, Costard, E, Jhabvala, C, Kan, E, Kahle, D, Foltz, R, Boehm, N, Hickey, M, Sun, J, Adachi, T, Costen, N, Hess, L, Facoetti, H, and Montanaro, M

Subjects
Electronics And Electrical Engineering, Optics
Abstract

The focal plane assembly for the Thermal Infrared Sensor (TIRS) instrument on NASA's Landsat Data Continuity Mission (LDCM) consists of three 512 x 640 GaAs Quantum Well Infrared Photodetector (QWIP) arrays. The three arrays are precisely mounted and aligned on a silicon carrier substrate to provide a continuous viewing swath of 1850 pixels in two spectral bands defined by filters placed in close proximity to the detector surfaces. The QWIP arrays are hybridized to Indigo ISC9803 readout integrated circuits (ROICs). QWIP arrays were evaluated from four laboratories; QmagiQ, (Nashua, NH), Army Research Laboratory, (Adelphi, MD}, NASA/ Goddard Space Flight Center, (Greenbelt, MD) and Thales, (Palaiseau, France). All were found to be suitable. The final discriminating parameter was the spectral uniformity of individual pixels relative to each other. The performance of the QWIP arrays and the fully assembled, NASA flight-qualified, focal plane assembly will be reviewed. An overview of the focal plane assembly including the construction and test requirements of the focal plane will also be described.

Published
2011

3. Naphthalimide side-chain polymers for organic light-emitting diodes: band-offset engineering and role of polymer thickness

Author

Cacialli, F., Friend, R.H., Bouche, C.-M., Le Barny, P., Facoetti, H., Soyer, F., and Robin, P.

Subjects
Polymers -- Research, Light-emitting diodes -- Research, Organic semiconductors -- Research, Physics
Abstract

Experiment was conducted to examine the fabrication of efficient green light-emitting diodes using a side-chain random polymer based on a high electron affinity (EA) naphthalimide moiety (PNI). Results suggest that the electroluminescence quantum efficiency is not limited by Al cathodes as for poly(p-phenylene vinylene) which is attributed to the increased EA. Findings also indicate that PNI generates higher efficiencies at high currents and longer lifetimes.

Published
1998

5. QWIP status and future trends at Thales

Author

Bois, P., primary, Guériaux, V., additional, Briere de l'Isle, N., additional, Manissadjian, A., additional, Facoetti, H., additional, Marcadet, X., additional, Costard, E., additional, and Nedelcu, A., additional

Published
2012
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6. Performance of the QWIP focal plane arrays for NASA's Landsat Data Continuity Mission

Author

Jhabvala, M., primary, Choi, K., additional, Waczynski, A., additional, La, A., additional, Sundaram, M., additional, Costard, E., additional, Jhabvala, C., additional, Kan, E., additional, Kahle, D., additional, Foltz, R., additional, Boehm, N., additional, Hickey, M., additional, Sun, J., additional, Adachi, T., additional, Costen, N., additional, Hess, L., additional, Facoetti, H., additional, and Montanaro, M., additional

Published
2011
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7. Focal plane arrays from UV up to VLWIR

Author

Costard, E., primary, Nedelcu, A., additional, Achouche, M., additional, Reverchon, J. L., additional, Truffer, J. P., additional, Huet, O., additional, Dua, L., additional, Robo, J. A., additional, Marcadet, X., additional, Brière de l'Isle, N., additional, Facoetti, H., additional, and Bois, P., additional

Published
2007
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14. QWIP status and future trends at Thales

Author

Bois, P., Guériaux, V., Briere de l'Isle, N., Manissadjian, A., Facoetti, H., Marcadet, X., Costard, E., and Nedelcu, A.

Abstract

Since 2005, Thales is successfully manufacturing QWIPs in high rate production through III-V Lab. All the early claimed advantages of QWIPs are now demonstrated. The versatility of the band-gap engineering allows the custom design of detectors to fulfill specific application requirements in MWIR, LWIR or VLWIR ranges. The maturity of the III-V microelectronics based on GaAs substrates gives uniformity, stability and high production rate. In this presentation we will discuss the specific advantages of this type of detector. An overview of the available performances and production status will be presented including under-development products such as dual band and polarimetric sensors.

Published
2012
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