Author: "Fabrice Gourbilleau" - Searchworks@Jio Institute Digital Library Search Results

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201 results on '"Fabrice Gourbilleau"'

1. Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

Author: Kangping Liu, Odile Cristini-Robbe, Omar Ibrahim Elmi, Shuang Long Wang, Bin Wei, Ingsong Yu, Xavier Portier, Fabrice Gourbilleau, Didier Stiévenard, and Tao Xu
Subjects: Surface passivation, Atomic layer deposition, Alumina layer, Structural/electrical properties, Silicon p-n junction, Materials of engineering and construction. Mechanics of materials, TA401-492
Abstract: Abstract Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposition (ALD) technique. This paper aims at presenting correlated structural/electrical studies for the passivation effect of alumina on Si junctions to obtain optimal thickness of alumina passivation layer. High-resolution transmission electron microscope (HRTEM) observations coupled with energy dispersive X-ray (EDX) measurements are used to determine the thickness of alumina at atomic scale. The correlated electrical parameters are measured with both solar simulator and Sinton’s Suns-Voc measurements. Finally, an optimum alumina thickness of 1.2 nm is thus evidenced.
Published: 2019
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2. Silicon Nanoscale Materials: From Theoretical Simulations to Photonic Applications

Author: Leonid Khriachtchev, Stefano Ossicini, Fabio Iacona, and Fabrice Gourbilleau
Subjects: Renewable energy sources, TJ807-830
Abstract: The combination of photonics and silicon technology is a great challenge because of the potentiality of coupling electronics and optical functions on a single chip. Silicon nanocrystals are promising in various areas of photonics especially for light-emitting functionality and for photovoltaic cells. This review describes the recent achievements and remaining challenges of Si photonics with emphasis on the perspectives of Si nanoscale materials. Many of the results and properties can be simulated and understood based on theoretical studies. However, some of the key questions like the light-emitting mechanism are subjects of intense debates despite a remarkable progress in the recent years. Even more complex and important is to move the known experimental observations towards practical applications. The demonstrated devices and approaches are often too complex and/or have too low efficiency. However, the challenge to combine optical and electrical functions on a chip is very strong, and we expect more research activity in the field of Si nanophotonics in the future.
Published: 2012
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3. Photonic Properties of Silicon-Based Materials

Author: Leonid Khriachtchev, Stefano Ossicini, Fabio Iacona, and Fabrice Gourbilleau
Subjects: Renewable energy sources, TJ807-830
Published: 2012
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4. Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime

Author: Meiling Zhang, Jean-Marie Poumirol, Nicolas Chery, Clément Majorel, Rémi Demoulin, Etienne Talbot, Hervé Rinnert, Christian Girard, Fuccio Cristiano, Peter R. Wiecha, Teresa Hungria, Vincent Paillard, Arnaud Arbouet, Béatrice Pécassou, Fabrice Gourbilleau, Caroline Bonafos, Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Centre de microcaractérisation Raimond Castaing (Centre Castaing), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), ANR-18-CE09-0034,DONNA,Dopage à l'échelle nano(2018), and ANR-21-CE30-0042,Ti-P,Plasmons de surfaces non réciproques induit par la topologie(2021)
Subjects: Condensed Matter - Materials Science, Physics::Optics, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, semiconductor-based plasmonic, Atomic and Molecular Physics, and Optics, green dyadic method, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, Physics::Atomic and Molecular Clusters, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], silicon nanocrystals, plasmon hybridization, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Electrical and Electronic Engineering, Physics - Optics, Optics (physics.optics), few electrons regime, Biotechnology
Abstract: Using localized surface plasmon resonance (LSPR) as an optical probe we demonstrate the presence of free carriers in phosphorus doped silicon nanocrystals (SiNCs) embedded in a silica matrix. In small SiNCs, with radius ranging from 2.6 to 5.5 nm, the infrared spectroscopy study coupled to numerical simulations allows us to determine the number of electrically active phosphorus atoms with a precision of a few atoms. We demonstrate that LSP resonances can be supported with only about 10 free electrons per nanocrystal, confirming theoretical predictions and probing the limit of the collective nature of plasmons. We reveal the appearance of an avoided crossing behavior linked to the hybridization between the localized surface plasmon in the doped nanocrystals and the silica matrix phonon modes. Finally, a careful analysis of the scattering time dependence versus carrier density in the small size regime allows us to detect the appearance of a new scattering process at high dopant concentration, which can be explained by P clustering inside the SiNCs.
Published: 2022
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5. Hyperdoped Si nanocrystals embedded in silica for infrared plasmonics

Author: Meiling Zhang, Jean-Marie Poumirol, Nicolas Chery, Hervé Rinnert, Alaa E. Giba, Rémi Demoulin, Etienne Talbot, Fuccio Cristiano, Teresa Hungria, Vincent Paillard, Fabrice Gourbilleau, Caroline Bonafos, Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Centre de microcaractérisation Raimond Castaing (Centre Castaing), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université Toulouse III - Paul Sabatier (UT3), Nano-Optique et Nanomatériaux pour l'optique (CEMES-NeO), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), China Scholarship Council (201801810118), and ANR-18-CE09-0034,DONNA,Dopage à l'échelle nano(2018)
Subjects: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science
Abstract: International audience; Plasmonic hyperdoped Si nanocrystals embedded in silica synthesized via a combination of sequential low energy ion implantation and rapid thermal annealing. We show that phosphorus dopants are incorporated into the nanocrystal cores at concentrations up to six times higher than P solid solubility in bulk Si by combining 3D mapping with atom probe tomography and analytical transmission electron microscopy. We shed light on the origin of nanocrystal growth at high P doses, which we attribute to Si recoiling atoms generated in the matrix by P implantation, which likely increase Si diffusivity and feed the Si nanocrystals. We show that dopant activation enables partial nanocrystal surface passivation that can be completed by forming gas annealing. Such surface passivation is a critical step in the formation of plasmon resonance, especially for small nanocrystals. We find that the activation rate in these small doped Si nanocrystals is the same as in bulk Si under the same doping conditions.
Published: 2023
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6. Artificial Aging of Thin Films of the Indium-Free Transparent Conducting Oxide SrVO 3

Author: Martando Rath, Moussa Mezhoud, Oualyd El Khaloufi, Oleg Lebedev, Julien Cardin, Christophe Labbé, Fabrice Gourbilleau, Vincent Polewczyk, Giovanni Vinai, Piero Torelli, Arnaud Fouchet, Adrian David, Wilfrid Prellier, Ulrike Lüders, Laboratoire de cristallographie et sciences des matériaux (CRISMAT), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), CNR Istituto Officina dei Materiali (IOM), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), and Laboratorio TASC (IOM CNR)
Subjects: [PHYS]Physics [physics], General Materials Science, [CHIM.MATE]Chemical Sciences/Material chemistry, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Published: 2023
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7. Synthesis and Characterization of a-SixCy Thin Films Prepared by RF Magnetron Co-Sputtering Technique

Author: Sam Baskar, R. Pratibha Nalini, and Fabrice Gourbilleau
Subjects: Materials science, Silicon, Annealing (metallurgy), Analytical chemistry, chemistry.chemical_element, Surfaces and Interfaces, Surfaces, Coatings and Films, chemistry.chemical_compound, chemistry, Sputtering, Cavity magnetron, Materials Chemistry, Electrochemistry, Silicon carbide, Thin film, Fourier transform infrared spectroscopy, Spectroscopy
Abstract: Si-C based alloys have attracted much attention due to their potential applications in electronic and optical devices. In this paper, a-Si x C y thin films with different Silicon (Si) content are obtained by sputtering of SiC; co-sputtering of SiC and Si targets at different deposition temperatures (T d ) such as 200 o C, 350 o C and 500 o C. It is annealed at various annealing temperature (T a ) using conventional thermal annealing (CTA) and Rapid Thermal Annealing (RTA) techniques. The effect of excess Si incorporation and the unintentional oxidation during various stages of sample preparation are discussed. Their structural and optical properties are investigated using spectroscopic ellipsometry, X-Ray Diffraction spectroscopy (XRD), and Fourier Transform Infrared spectroscopy (FTIR). The refractive index value (n 1.95eV ) varies between 1.6 to 3.6, suggesting the transition from porous silicon carbide to Si-rich silicon carbide or silicon oxycarbide upon increasing T d and T a , which is also supported by the FTIR spectra. The emergence of absorption peak between ~950 cm −1 and 1100 cm −1 with the increase of T a and excess silicon is attributed to Si-O a stretching vibration bond which is an indication of Si richness and unintentional oxidation during annealing. Detailed analysis on the process parameters and the evolution of phase transformations are discussed.
Published: 2020
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8. Correlation of luminescence measurements to the structural characterization of Pr3+-doped HfSiOx

Author: Etienne Talbot, Larysa Khomenkova, Rémi Demoulin, Celia Castro, Christophe Labbé, Fabrice Gourbilleau, Philippe Pareige, Groupe de physique des matériaux (GPM), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (NASU), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), and Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Photoluminescence, Materials science, Annealing (metallurgy), Cathodoluminescence, Biophysics, Analytical chemistry, 02 engineering and technology, Atom probe, 010402 general chemistry, 01 natural sciences, Biochemistry, law.invention, law, Rare-earth, Phase transition, Structural properties, General Chemistry, Sputter deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Amorphous solid, Hafnium silicates, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Orthorhombic crystal system, 0210 nano-technology, Luminescence
Abstract: International audience; Luminescence and structural properties of Pr3+ doped HfSiOx thin layer elaborated by magnetron sputtering have been investigated as a function of the annealing temperature. The emission properties of Pr3+ ions were studied using photoluminescence (PL) and cathodoluminescence (CL) spectroscopies. Phase separation between amor- phous SiO2 and crystallized HfO2 nano-grains occurring in the HfSiOx matrix has been investigated by atom probe tomography and transmission electron microscopy with particular consideration for the Pr distribution. Both PL and CL measurements evidenced a strong emission originating from Pr3+ ions in the visible range for an annealing temperature higher than 950◦C. At 950◦C, Pr3+ ions are clearly located in HfO2 nano-grains of cubic structure. Regarding PL, no significant changes are observed between 950◦C and 1050◦C. However, CL mea- surements revealed new emission peaks in the infrared range after an annealing at 1050◦C, corresponding to the appearance of a new orthorhombic crystalline structure of HfO2 nano-grains in the thin layer. The CL signal evolution as a function of the annealing treatment is discussed in regard to the evolution of structural properties.
Published: 2021
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9. Evolution of Morphology, Structure and Emission in Si-rich HfO 2 :Nd films with Annealing Times

Author: Tetyana Torchynska, Larysa Khomenkova, Fabrice Gourbilleau, L Vega, J Casas, A Rivero, UPIITA-IPN [Mexico], Instituto Politecnico Nacional [Mexico] (IPN), Escuela Superior de Fisica y Matematicas [Mexico] (ESFM), Centro de Investigacion y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV), Instituto Politécnico Nacional, SEPI-ESIME Ticomán (IPM), V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (NASU), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), and Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN)
Subjects: History, Photoluminescence, Materials science, Annealing (metallurgy), Scanning electron microscope, Analytical chemistry, chemistry.chemical_element, 01 natural sciences, Education, [SPI.MAT]Engineering Sciences [physics]/Materials, 010309 optics, Crystal, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], Tetragonal crystal system, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Spectroscopy, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Argon, [CHIM.MATE]Chemical Sciences/Material chemistry, Sputter deposition, Computer Science Applications, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Abstract: The impact of the time at high temperature annealing on the morphology, crystal structure and emission in visible spectral range has been studied in Si rich HfO2:Nd films produced by radio-frequency magnetron sputtering in pure argon plasma. The annealing was carried out at 900 °C for 1, 5, 10, 30 and 60 min in the nitrogen atmosphere. A set of experimental methods have been used, such as: scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and photoluminescence (PL). In the present work the joint analysis of PL and XRD results permits us to estimate the optimal time parameters of annealing at 900 °C the Si-HfO2: Nd films for obtaining the bright emission via 4f electronic levels of the Nd ions embedded in the tetragonal HfO2 phase mainly after long annealing (30- 60 min). The film oxidation for annealing times (60 min) stimulated some crystal phase transformation with the start of formation of the tetragonal SiO2 phase, that is accompanied by the defect generation and decreasing the PL intensity. The discussion of PL and XRD results is presented in detail.
Published: 2021
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10. Light Emission in Nd Doped Si-Rich HfO2 Films Prepared by Magnetron Sputtering

Author: Fabrice Gourbilleau, Larysa Khomenkova, Tetyana Torchynska, L. G. Vega Macotela, Instituto Politecnico Nacional [Mexico] (IPN), Escuela Superior de Ingeniería Mecánica y Eléctrica - Unidad Profesional Ticomán (ESIME-UPT), V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (NASU), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), and Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN)
Subjects: Materials science, Photoluminescence, Annealing (metallurgy), Analytical chemistry, 02 engineering and technology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], symbols.namesake, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Spectroscopy, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Doping, [CHIM.MATE]Chemical Sciences/Material chemistry, Sputter deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, symbols, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Light emission, 0210 nano-technology, Luminescence, Raman scattering
Abstract: Hafnium oxide films doped with Si and Nd atoms were produced by radio-frequency magnetron sputtering of a HfO2 target topped with calibrated Si and Nd2O3 pellets in pure argon plasma followed by an annealing in nitrogen atmosphere during tA = 15 min at different temperatures (TA = 800–1100°C). The evolution of structural, chemical and luminescent properties of the films with TA was studied by means of the scanning electronic microscopy (SEM), x-ray diffraction (XRD), Raman scattering, energy dispersive x-ray spectroscopy and photoluminescence (PL) methods. The SEM method revealed that the surface of as-deposited film consists of the grains with the mean size of 20–60 nm. Annealing treatment stimulated the growing of the grains (up to 100 nm in lateral size) and film densification. The presence of Si-rich phase was detected by Raman scattering spectra in as-deposited films and those annealed at low TA. The TA increase results in the phase separation process. For the films annealed at TA > 950°C, the tetragonal HfO2 and SiO2 phases were clearly detected by the XRD method. PL spectra of the films were found to be complex. They demonstrated several PL bands in the visible (400–750 nm) and infrared (800–1430 nm) spectral ranges. Besides PL components caused by the recombination of carriers via host defects, the PL signal from Nd3+ ions due to the transition in the 4f inner electronic shell was observed. The highest Nd3+ related PL signal was observed for the films annealed at TA = 950°C. Peculiarities of PL excitation and the mechanism of the phase separation are analysed and discussed.
Published: 2020
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11. (Invited) Luminescence of Rare Earth Doped Si Based Nanofilms for LED and Photovoltaic Applications

Author: Wojciech M. Jadwisienczak, Christian Dufour, Larysa Khomenkova, Christophe Labbé, Florian Ehre, Xavier Portier, Cédric Frilay, Xavier Marie, Fabrice Gourbilleau, David C. Ingram, Julien Cardin, Philippe Marie, Hervé Rinnert, Ing-Song Yu, Delphine Lagarde, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (NASU), National University of Kyiv-Mohyla Academy (UKMA), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique et chimie des nano-objets (LPCNO), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), School of Electrical Engineering and Computer Science, Ohio University, Department of Physics and Astronomy, Ohio University, National Dong Hwa University (NDHU), and Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT-FR 2599)
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, business.industry, Rare earth, Photovoltaic system, Doping, [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Luminescence, business
Abstract: Rare earth (RE) doped silicon host matrices have been largely investigated to produce their luminescence's at different wavelengths for many applications such as Light Emitting Diode (LED) or frequency conversion layer to improve Solar Cells (SCs) efficiency. To achieve such a goal, RE ions-doped silicon oxynitride-based (SiOxNy) films have been deposited by reactive magnetron co-sputtering. A oxynitride host matrix allows a high RE ions incorporation while avoiding the clustering effect observed in silicon oxide host matrix. In a first step, two different RE, Tb3+ and Ce3+, have been investigated. The Tb3+ ions present intra 4f transitions, whereas the Ce3+ ions have 4f-5d transitions. [1] These two different electronic configurations are investigated by means of luminescence spectroscopy. Indeed, the first step of this work is motivated by achieving an intense emission of Tb3+ and Ce3+ ions by optimizing the deposition parameters. The SiOxNy: RE layers were deposited on silicon substrates by using RF magnetron sputtering technique under N2 reactive flow, with a typical thickness of 20-50 nm. A deep investigation is performed to obtain an intense Ce3+ photoluminescence signal according to the Ce and N concentrations. Up to 6 at. % of Ce3+, no saturation of the PL intensity has been observed, demonstrating the absence of Ce clusters and/or silicate phase formation thanks to the nitrogen content. The influence of the nitrogen on current injection will be presented and the electroluminescence (EL) properties (I-V characteristic, EL spectra) will be analyzed.[2] In a second step, down-converter (DC) layers compatible with the silicon industry which absorb UV photons and convert them into IR ones at an energy just above the Si band gap, were developed, taking account these two donors Tb3+ and Ce3+ and as acceptor the Yb3+ ion. Two different co-doping have been chosen i.e. Tb3+-Yb3+ and Ce3+-Yb3+ with the aim at obtaining an intense emission of the Yb3+ at 980 nm (1.265 eV). Furthermore the excitation mechanisms of acceptor ions Yb3+ will be discussed in both cases. [3, 4] At last, efficiency measurements with our DC layers on homemade and industrial Si-SCs have been carried out.[5] [1] C. Labbé, Y.T. An, G. Zatryb, X. Portier, A. Podhorodecki, P. Marie, C. Frilay, J. Cardin, F. Gourbilleau, Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films, Nanotechnology, 28 (2017) 115710-115714. [2] F. Ehre, C. Labbé, C. Dufour, W. Jadwisienczak, J. Weimmerskirch-Aubatin, X. Portier, J.-L. Doualan, J. Cardin, A. Richard, D.C. Ingram, C. Labrugère, F. Gourbilleau, Nitrogen concentration effect on Ce doped SiOxNy emission: towards optimized Ce3+ for DEL application Nanoscale, 20 (2018) 4818-4830. [3] Y.-T. An, C. Labbé, M. Morales, F. Gourbilleau, Highly efficient infrared quantum cutting in Tb3+-Yb3+ codoped silicon oxynitride for solar cell applications, Advanced Optical Materials, 1 (2013) 855-862. [4] L. Dumont, P. Benzo, J. Cardin, I.S. Yu, C. Labbé, P. Marie, C. Dufour, G. Zatryb, A. Podhorodecki, F. Gourbilleau, Down-shifting Si-based layer for Si solar applications, Solar Energy Materials and Solar Cells, 169 (2017) 132-144. [5] L. Dumont, J. Cardin, C. Labbé, C. Frilay, P.-M. Anglade, I.S. Yu, M. Vallet, P. Benzo, M. Carrada, D. Stiévenard, H. Mérabet, F. Gourbilleau, First Down Converter multilayers integration in an industrial Si solar cell process, Progress in Photovoltaics: Research and Applications, 27 (2018) 152-162.
Published: 2020
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12. (Invited) Rare Earth Doped Layers Fabricated By Atomic Layer Deposition

Author: Fabrice Gourbilleau, Larysa Khomenkova, Julien Cardin, Christophe Labbé, Aline Jolivet, Xavier Portier, V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (NASU), National University of Kyiv-Mohyla Academy (UKMA), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), and Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, business.industry, Doping, Rare earth, [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], Atomic layer deposition, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract: Many approaches, developments, structures and materials have been proposed these last years to offer innovative solutions allowing the decrease of the CO2 production and the energy consumption while increasing the efficiency of the properties which are aiming for. Over the last decade, among the approaches developed, a growth process has experienced an important boom related to the possibility it offers on the development of high quality layers. It concerns the Atomic Layer Deposition technique (ALD) that allows growing conformal layer on a substrate having high surface/volume ratio. Although such a technique is well developed and used for microelectronic and photovoltaic applications, the works on photonic devices are still at an early stage. Indeed, for the former, Al2O3, SiNx, HfO2 materials are currently deposited using ALD for microelectronic devices. Besides, the high quality alumina passivation layer is deposited on the Si solar cell bottom that allows the increase of the performance of the solar cell. However, for photonic devices, the crucial issue is to succeed in incorporating and managing the dopant concentration during the process. ALD process is a, at least, two steps process requiring a precursor containing the element of the layer to grow and oxidation step. The most used sequence for Al2O3 growth is a trymethylaluminium (TMA) precursor pulse followed by an oxidation step using water pulse. For doping such layer, a suitable precursor allowing to grow a dopant atomic layer in a temperature range and under oxidizing conditions that are appropriate with the host matrix growth has to be found. The objective of this paper is to present our recent investigations on the growth of RE-doped Al2O3 layer by ALD using different RE precursors. For growing such doped layer, four steps process is required corresponding to the TMA precursor/oxidation sequence followed by the RE-precursor/oxidation one. Fabrication conditions using either water, O2 plasma or ozone as oxidant agent have been investigated to find the ALD window leading to a suitable Growth Per Cycle (GPC) rate in a low deposition temperature range. After deposition, different annealing treatments have been applied to optimize the microstructural and the optical properties of the films considering their potential application, notably in photovoltaic domain. The most attention was paid to Tb- and Er-doped Al2O3 thin layers growth and to the optimization of the processing conditions to achieve required optical properties for the photon management in solar cell. As an example, Er-doped Al2O3 layers have been produced varying the number of Er precursor cycles with respect to the TMA one in order to manage the Er concentration in the layer. Our thin films containing 4.0 to 13 at.% of Er in the host matrix were found to be homogeneous not only prior to the annealing treatment but also after an annealing at 650°C during 15 minutes in nitrogen, conditions that are suitable for solar cell processing. For the highest concentration, phase separation has been observed upon annealing temperature at high temperature. Photoluminescence and photoluminescence excitation experiments have been carried out to study the optical response of such a layer. Indeed, considering that 100nm-thick Al2O3 ALD layer is actually used at the bottom of the Si Cell, succeeding to incorporate optically active Er ions in such a layer and achieving an upconversion process to convert the IR non-absorbed photons by the cell would be a way to increase the Si cell efficiency without modifying a well-established industrial process.
Published: 2020
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13. Thermally Stimulated Evolution of Optical and Structural Properties of Germanium-Doped Alumina Films

Author: Fabrice Gourbilleau, Larysa Khomenkova, Isaac Balberg, Oleksandr Melnichuk, L. Melnichuk, Caroline Bonafos, Nicolas Ratel-Ramond, Nadiia Korsunska, Kremena Makasheva, Peter Petrik, V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (NASU), National University of Kyiv-Mohyla Academy (UKMA), Sciences et Ingénierie des Plasmas Réactifs et des Arcs (LAPLACE-ScIPRA), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT), Institute of Technical Physics and Materials Science (MFA), Centre for Energy Research [Budapest] (MTAE), Hungarian Academy of Sciences (MTA)-Hungarian Academy of Sciences (MTA), Nano-Optique et Nanomatériaux pour l'optique (CEMES-NeO), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Mykola Gogol State University of Nizhyn (MGSUN), Racah Institute of Physics (Racah Institute of Physics), The Hebrew University of Jerusalem (HUJ)-Racah Institute of Physics, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées, Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), and Normandie Université (NU)
Subjects: Photoluminescence, Materials science, Annealing (metallurgy), Doping, Analytical chemistry, chemistry.chemical_element, Germanium, 02 engineering and technology, Substrate (electronics), 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Amorphous solid, chemistry, Nanocrystal, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, Luminescence
Abstract: Group IV semiconductor nanoclusters/nanocrystals attract a great interest because of substantial transformation of their optical, electrical and luminescent properties due to quantum confinement effects. During last decades significant attention was paid to the Si nanocrystals (ncs) embedded in Si oxide or nitride, and later, to the Ge-ncs embedded in these matrices. The mechanism of these 'ncs' formation was investigated in details. Recently we have reported on the Si-ncs formation in hafnia and alumina thin films. This work will present the results obtained for the Ge-rich Al2O3 films. The effect of Ge content and annealing conditions on the evolution of optical and structural properties of these materials and formation of Ge-ncs will be addressed. The films with different Ge content were grown on quarts substrates by magnetron co-sputtering of Ge and Al2O3 targets in argon plasma. After deposition, they were annealed in nitrogen atmosphere and analyzed by means of spectroscopic ellipsometry, FTIR, Raman scattering, XRD and photoluminescence methods. It is observed that suitable thermal treatment leads to the decomposition of nonstoichiometric films and results in the Ge-ncs formation. The formation of Ge-ncs via phase separantion requires lower temperatures (600-700°C) than that for Si-ncs production in alumina host (1050-1100ºC). An annealing at 800-950ºC results in the Ge out-diffusion from the films via formation of volatile GeO. This process results in the significant depletion of the near-surface regions in germanium that was confirmed by an appearance of gradient in the refractive index via film volume. Decomposition process stimulates also an appearance of visible and near-infrared photoluminescence. The shape of luminescent spectrum depends significantly on both Ge content and the excitation wavelength. It is observed that exciton recombination inside nanocrystals dominates at longer wavelength excitation, whereas the UV-blue excitation results in the radiative recombination via interface or host defects in the materials. This result was found to be caused by the competition of different radiative channels in the films. The evolution of optical and luminescent properties will be discussed in details.
Published: 2020
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14. Annealing impact on emission and phase varying of Nd-doped Si-rich-HfO2 films prepared by RF magnetron sputtering

Author: Larysa Khomenkova, Fabrice Gourbilleau, Tetyana Torchynska, L. G. Vega Macotela, L. Lartundo Rojas, Instituto Politecnico Nacional [Mexico] (IPN), Escuela Superior de Ingeniería Mecánica y Eléctrica - Unidad Profesional Ticomán (ESIME-UPT), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (NASU), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), and Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Photoluminescence, Materials science, Annealing (metallurgy), Analytical chemistry, Thermal treatment, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], Tetragonal crystal system, X-ray photoelectron spectroscopy, 0103 physical sciences, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Spectroscopy, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [CHIM.MATE]Chemical Sciences/Material chemistry, Sputter deposition, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Light emission
Abstract: International audience; HfO2 films doped with Nd and Si atoms were produced by RF magnetron sputtering in argon plasma atmosphere. The effect of annealing treatment on the morphology, crystal structure and light emission of the films was investigated by means of the scanning electronic microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). The thermal treatment was performed in the temperature range of TA = 800–1100 °C in horizontal furnace with continuous nitrogen flow. For annealed Si–HfO2:Nd films, the SEM study revealed the formation of the grains with the mean size of about 20–60 nm that show the tendency to enlarge with the TA rise. Besides, the phase separation was observed and tetragonal HfO2 and SiO2 phases were detected by the XRD method for the films annealed at TA > 950 °C. The PL study revealed that both Nd3+ ions and host defects contribute to PL emission whereas their relative contribution depends on the TA and on the crystal phase of host matrix. The highest PL intensity of Nd3+ ions via 4f inner electronic shell levels was detected for TA = 950 °C. The variation of PL intensity of Nd3+ ions was correlated with the change of PL intensity of the band caused by the host defects. These latter participate in the energy transfer towards Nd3+ ions. This statement was confirmed by XPS data, as well as by the shape of PL spectra. It was shown that the bright emission via Nd3+ ions can be achieved for those located in the tetragonal HfO2 matrix.
Published: 2020
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15. Effect of nitrogen concentrations on optical, structural and mechanical properties of self organized a-C:N films

Author: R. Rane, Infant Solomon, Fabrice Gourbilleau, Mukul Bhatnagar, Mukesh Ranjan, Krishnanand Shukla, Arun Sarma, School of Advanced Sciences (SAS) [Chennai], VIT University, Facilitation Centre for Industrial Plasma Technologies, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), and Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Diamond-like carbon, 02 engineering and technology, Surface finish, Surface engineering, engineering.material, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], X-ray photoelectron spectroscopy, Coating, 0103 physical sciences, Materials Chemistry, Composite material, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Process Chemistry and Technology, Partial pressure, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Microstructure, Hardness, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Ceramics and Composites, engineering, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology
Abstract: Low friction and surface hardness has become an important aspect to study and understand surface engineering of diamond like coating. Investigation of structural and mechanical properties of nitrogenated amorphous Diamond Like Carbon coating has been done. The cross-sectional microstructures, elemental compositions and various phase constituent of the coated layers under different processing conditions have been characterized. Films are deposited in presence of 5%–20% with the increasing rate of 5% and 40% of N2 partial pressure along with Ar gas. 20% N2 pressure shows a critical behavior in Raman spectroscopy and XPS. In this condition the film shows more uniform coating with vertical growth structures as well as brittle behavior. The micro-structural changes on the surface due to migration of N2 and its related surface properties have been examined. AFM studies clearly show that the percentage change in average roughness decreases to 17% as the film thickness increases at 20% N2 incorporation. The positive changes in its mechanical properties have been observed by Nano-indentation techniques. Significance of DLC coating in this condition is clearly seen with the increasing sp3compositions by XPS analysis. All results have been correlated and hence critical range of nitrogen partial pressure has been observed between 20%-23% to give similar sp3 fraction and hence properties that of pure DLC films.
Published: 2020
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16. Spectroscopic characterization of phase transformation in Ge-rich Al2O3 films grown by magnetron co-sputtering

Author: O. Melnichuk, Larysa Khomenkova, Fabrice Gourbilleau, L. Melnichuk, Isaac Balberg, Z. Tsybrii, Peter Petrik, Kremena Makasheva, Nadiia Korsunska, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Sciences et Ingénierie des Plasmas Réactifs et des Arcs (LAPLACE-ScIPRA), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées, Centre for Energy Research [Budapest] (MTAE), Hungarian Academy of Sciences (MTA), V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (NASU), Mykola Gogol State University of Nizhyn (MGSUN), Racah Institute of Physics, The Hebrew University of Jerusalem (HUJ), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)
Subjects: Photoluminescence, Materials science, Luminescence, Annealing (metallurgy), Analytical chemistry, Phase separation, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, law.invention, Sputtering, law, Ellipsometry, Phase (matter), Al2O3, General Materials Science, Crystallization, Infrared specular reflection, Mechanical Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Ge nanoclusters, 0104 chemical sciences, Amorphous solid, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Light emission, 0210 nano-technology
Abstract: International audience; Thermally-stimulated evolution of optical and structural properties of Ge-rich-Al2O3 films with different Ge contents was investigated. As-deposited films and films annealed at TA ≤ 550 °C were found to be amorphous whatever the Ge content. The formation of amorphous Ge clusters occurs at TA = 550 °C, whereas their crystallization is prominent at TA = 600 °C requiring a shorter annealing time for the higher Ge content. The films annealed at TA = 550 °C showed broad photoluminescence spectrum. Its shape and intensity depend on Ge content and excitation energy. Annealing at TA = 600 °C results in the appearance of additional UV bands originated from the formation of GeOx phase covered Ge clusters. An analysis of excitation spectra was performed to distinguish the mechanism of light emission in these films as well as to discriminate contribution of carrier recombination in the Ge phase (amorphous clusters and/or nanocrystals) as well as via interface or host defects. The concentration and mobility of free carriers was also estimated.
Published: 2020
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17. Influence of Deposition Temperature on the Si Richness in SiC-Based Thin Films for Optoelectronic Applications

Author: Fabrice Gourbilleau, R. Pratibha Nalini, Giri Goutham, Sam Baskar, and Job Sandeep
Subjects: Materials science, Silicon, Absorption spectroscopy, Annealing (metallurgy), Analytical chemistry, chemistry.chemical_element, Nanoclusters, symbols.namesake, chemistry.chemical_compound, chemistry, symbols, Silicon carbide, Thin film, Fourier transform infrared spectroscopy, Raman spectroscopy
Abstract: Silicon nanoclusters/nanocrystals (Si-NC) embedded in silicon carbide (SiC) host matrix is a promising alternative to high bandgap dielectric matrices for solar cell application. However, the formation of Si-NC is a challenge since silicon carbide nanoclusters (SiC-NC) are formed with greater ease in the SiC host matrix. In this context, this work focuses on analyzing the influence of process parameters (deposition and annealing temperature) to synthesize the silicon-rich SiC film (a-SixCy) for favoring Si-NC formation in the host matrix. In this paper, the Si-NC in a-SixCy is obtained by co-sputtering of SiC and Si targets at different deposition temperatures (Td) such as room temperatures 200 °C, 350 °C, and 500 °C. It is annealed at various temperatures and ambience such as vacuum (VA) and conventional thermal annealing (CTA). The structural and optical properties are investigated using spectroscopic ellipsometry, Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and photoluminescence spectroscopy (PL). The refractive index varies between 3.3 and 3.7 which indicates the Si richness in the film. In FTIR absorption spectra and Raman spectra, change in intensity and position of Si-related vibrations varies depending on the excess Si incorporation. PL spectra show emission in the range of 412–440 nm that varies with different annealing and confirms the possibility of the Si-NC formation in the film.
Published: 2020
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18. Down-shifting Si-based layer for Si solar applications

Author: Christophe Labbé, Christian Dufour, Philippe Marie, Gregor Zatryb, Ing-Song Yu, Lucile Dumont, Fabrice Gourbilleau, Patrizio Benzo, A. Podhorodecki, Julien Cardin, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Department of Materials Science and Engineering, National Dong Hwa University (NDHU), Faculty of Fundamental Problems of Technology [Wroclaw], LABEX EMC3 ASAP project, Partenariat Hubert Curien (PHC), Programs Orchid n° 33572XF and Polonium n°27720WC., ANR-13-BS09-0020,GENESE,Gestion de la lumièrE pour la future géNération de cEllules SolairEs(2013), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), and Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, chemistry.chemical_element, Terbium, 02 engineering and technology, 01 natural sciences, 7. Clean energy, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, law, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Thin film, Absorption (electromagnetic radiation), 010302 applied physics, Thin layers, Renewable Energy, Sustainability and the Environment, business.industry, 021001 nanoscience & nanotechnology, Microstructure, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Anti-reflective coating, chemistry, Optoelectronics, 0210 nano-technology, business, Luminescence, Layer (electronics)
Abstract: International audience; SiNx and SiNx:Tb3+ thin layers were deposited by reactive magnetron co-sputtering with the objective of optimizing the light management in Si solar cells. Those Si-based layers are developed to be compatible with the Si-PV technology. An efficient energy transfer between SiNx matrix and terbium ions (Tb3+), enhancing this system absorption, has been demonstrated and optimized. The layer composition and microstructure as well as its optical properties have been analyzed with the aim of improving both its anti-reflective properties and its luminescence emission intensity. An optimized layer was obtained by co-sputtering of Si and Tb targets in a nitrogen rich atmosphere. The emission efficiency of the SiNx:Tb3+ layer is compared to the one of previously optimized SiOxNy:Tb3+ layer. Finally we show how SiNx:Tb3+ thin films may be integrated on top of Si solar cells and act simultaneously as a down-shifting layer and antireflective coating.
Published: 2017
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19. Rare earth doped semiconducting nanofilms for Si-based light-emitting devices

Author: Christophe Labbe, Florian Ehré, Christian Dufour, Fabrice Gourbilleau, Xavier Portier, Cédric Frilay, Philippe Marie, Hervé Rinnert, David Lagarde, Xavier Marie, Jadwisienczak, Wojciech M., Ingram, David C., Julien Cardin, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique et chimie des nano-objets (LPCNO), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Ohio University, Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)
Subjects: [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract: International audience
Published: 2019

20. Phase transformation and light emission in Er-doped Si-rich HfO 2 films prepared by magnetron sputtering

Author: Fabrice Gourbilleau, Larysa Khomenkova, Tetyana Torchynska, Xavier Portier, Brahim El Filali, Instituto Politecnico Nacional [Mexico] (IPN), Instituto Politechnico National (IPN), V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (NASU), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), and Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Photoluminescence, Materials science, Annealing (metallurgy), Scanning electron microscope, Analytical chemistry, 02 engineering and technology, 01 natural sciences, 7. Clean energy, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], Tetragonal crystal system, X-ray photoelectron spectroscopy, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Spectroscopy, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Surfaces and Interfaces, [CHIM.MATE]Chemical Sciences/Material chemistry, Sputter deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Light emission, 0210 nano-technology
Abstract: The impact of phase transformation on the emission properties of Er-doped Si-rich HfO2 films obtained by RF magnetron sputtering has been investigated by means of the scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and photoluminescence techniques. It has been observed that thermal treatment of the films at 950 and 1100 °C governs a phase separation process. The formation of HfO2 nanocrystals of the tetragonal phase together with the Si-quantum dots (QDs) occurs at 950 °C. Upon annealing at 1100 °C, the tetragonal SiO2 and monoclinic HfO2 nanocrystals appear. The appearance of bright emission in the visible-near-infrared spectral range, related to the optical transitions in the 4f intrashell energy levels of Er ions, has been detected. The investigation of the annealing effect on the luminescent properties has revealed that the enhancement of Er3+ emission occurs due to an effective energy transfer from Si-QDs toward the Er ions. The oxidation of Si-QDs at high temperature annealing (1100 °C) leads to a reduction in the intensity of the Er ion related emission. Since hafnia-based materials have high density and are very sensitive to high-energy excitation, the results offer multifunctional applications of doped hafnia films, such as the luminescent materials for traditional phosphors.The impact of phase transformation on the emission properties of Er-doped Si-rich HfO2 films obtained by RF magnetron sputtering has been investigated by means of the scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and photoluminescence techniques. It has been observed that thermal treatment of the films at 950 and 1100 °C governs a phase separation process. The formation of HfO2 nanocrystals of the tetragonal phase together with the Si-quantum dots (QDs) occurs at 950 °C. Upon annealing at 1100 °C, the tetragonal SiO2 and monoclinic HfO2 nanocrystals appear. The appearance of bright emission in the visible-near-infrared spectral range, related to the optical transitions in the 4f intrashell energy levels of Er ions, has been detected. The investigation of the annealing effect on the luminescent properties has revealed that the enhancement of Er3+ emission occurs due to an effective energy transfer from Si-QDs toward the Er ions. The...
Published: 2019
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21. First down converter multilayers integration in an industrial Si solar cell process

Author: Maxime Vallet, P.-M. Anglade, M. Carrada, Christophe Labbé, Fabrice Gourbilleau, Patrizio Benzo, Lucile Dumont, Cédric Frilay, Hocine Merabet, Julien Cardin, Didier Stiévenard, Ing-Song Yu, École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU), Nano-Optique et Nanomatériaux pour l'optique (CEMES-NeO), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), ACKNOWLEDGMENTSThis work was financially supported by the French Research NationalAgency through the GENESE project (N° ANR‐13‐BS09‐0020‐01) anda part of it by NPRP grant 8‐1467‐1‐268 from the Qatar NationalResearch Fund (a member of the Qatar Foundation). The findingsachieved herein are solely the responsibility of the authors.The French authors want to thanks the French ministry for thesupport through the Partenariat Hubert Curien (PHC) ProgramsOrchid N° 33572XF, and the ETON Solar Tech Co., LTD for providingSi solar cells and industrially processed the Si‐SC with DC layer.Lucile Dumont thanks CNRS and the Region Basse‐Normandie forher PhD student support., ANR-13-BS09-0020,GENESE,Gestion de la lumièrE pour la future géNération de cEllules SolairEs(2013), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), and Physique-IEMN (PHYSIQUE-IEMN)
Subjects: Materials science, Context (language use), 02 engineering and technology, 010402 general chemistry, 7. Clean energy, 01 natural sciences, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, SiNx, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], law, Si solar cell efficiency, Solar cell, Energy transformation, down converter, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Solar power, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Renewable Energy, Sustainability and the Environment, business.industry, Tb-Yb, Photovoltaic system, Energy conversion efficiency, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Solar energy, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Tb‐Yb, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Solar cell efficiency, 13. Climate action, rare earth ions, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business
Abstract: International audience; Down converter SiN x :Yb 3+ /SiN x :Tb 3+ multilayers are deposited by reactive magnetron cosputtering with the objective of optimizing the interaction distance betweenTb 3+ and Yb 3+ ions to favor a better light management in Si solar cells. Those Si‐based multilayers are developed to be compatible with the Si photovoltaic technology. The deposition parameters are optimized to enhance the emission of the Yb 3+ ions in the IR region. The emission efficiency of such multilayer structure is compared with a mixed RE SiN x :Tb 3+ ‐Yb 3+ layer evidencing a gain resulting from a better management of the Tb 3+ and Yb 3+ ions distance. At the end, we integrate the growth of such a multilayer in an industrial Si solar cell process and demonstrate the existence of a frequency conversion effect that is promising for the future increase of the Si solar cell efficiency. KEYWORDS down converter, rare earth ions, Si solar cell efficiency, SiN x , Tb‐Yb 1 | INTRODUCTION The limitation of global average temperature increase to 2°C agreed by the international community at the COP21 Paris's meeting strengthens the need of developing carbon free sustainable energies. To reach this goal, the use of sustainable energy sources, particularly solar energy, has to be optimized while their running cost has to be decreased. In this context, continuous improvements have been done on silicon solar cell that is actually the most used nowadays solar power generation. Thus, a typical conversion efficiency of about 20% is industrially validated and more recently a value as high as over 26% 1 has been achieved in lab. Thus, increasing its efficiency while keeping a low cost process is one of the goals of the silicon‐photovoltaic (Si‐PV) industry to continuously decrease the cost of the power generation and thus increase its competitiveness. The limited efficiency of Si‐PV comes principally from thermal-ization of photogenerated minority carriers. 2 Hence, the energy excess of these photogenerated excitons with respect to the Si solar cell (Si‐SC) bandgap energy is released into the matrix. As a result, besides a limited energy conversion, such a process may increase the cell temperature and therefore reduce the efficiency of the cell. For example, an increase of 1°C above 25°C leads to a decrease of the SC efficiency by around 0.65% 3-5 and results in its faster aging. Several ways to improve the SC efficiency 6 are thus investigated such as tandem cells, 7,8 surface textur-ing, 9,10 antireflective layer, 11-13 or frequency conversion layer. 2,14-20 In that respect, down conversion (DC) answers the thermalization issue by converting high energy photons to a greater number of lower energy pho-tons with energies close to the Si‐SC gap. Many systems using a couple of rare earth (RE) ions, such as Pr 3+ ‐Yb 3+ , 21-23 Tb 3+ ‐Yb 3+ , 24-27 and Ce 3+ ‐ Yb 3+ , 28,29 have been studied for the DC approach. The major drawbacks of those different developed systems are the use of a non–Si‐compatible process due to the nature of the host matrix and/or the low absorption cross section of the RE ions that limits their excitability in the solar spectrum range. 15,30 To overcome this problem, a Si‐PV compatible host matrix containing sensitizers has been developed in our group taking into account that such a host matrix should have good antireflective properties to be used as antireflection coating (ARC). 31
Published: 2019
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22. Influence of rapid thermal annealing temperature on the photoluminescence of Tb ions embedded in silicon nitride films

Author: Christophe Labbé, P. Benzo, Julien Cardin, Jan Misiewicz, Artur Podhorodecki, Fabrice Gourbilleau, L W Golacki, G. Zatryb, M.M. Klak, Institute of Physics [Wroclaw], Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institute of Physics, Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physiologie et Génomique des Poissons (LPGP), Institut National de la Recherche Agronomique (INRA)-Structure Fédérative de Recherche en Biologie et Santé de Rennes ( Biosit : Biologie - Santé - Innovation Technologique ), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), and Cardin, Julien
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], Photoluminescence, Materials science, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, Annealing (metallurgy), [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.PHYS.PHYS-COMP-PH] Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], Analytical chemistry, chemistry.chemical_element, Terbium, 02 engineering and technology, [SPI.MAT] Engineering Sciences [physics]/Materials, 01 natural sciences, Ion, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], Condensed Matter::Materials Science, chemistry.chemical_compound, 0103 physical sciences, Materials Chemistry, Photoluminescence excitation, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, [CHIM.MATE] Chemical Sciences/Material chemistry, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, Metals and Alloys, Surfaces and Interfaces, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Silicon nitride, chemistry, Excited state, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, Excitation
Abstract: International audience; In this work, silicon nitride films containing terbium were deposited by reactive magnetron co-sputtering in a nitrogen enriched plasma and subjected to rapid thermal annealing treatments. The influence of annealing temperature on the emission and absorption properties of these films was investigated by photoluminescence, photoluminescence decay and photoluminescence excitation measurements. An increase in the photo-luminescence intensity and photoluminescence decay time was observed upon annealing for the main 5 D 4-7 F 5 transition of Tb 3+ ions. This observation was attributed to decrease of the non-radiative recombination and increase of the number of excited Tb 3+ ions upon annealing. Moreover, high temperature annealing was found to shift the spectral position of absorption bands observed in the photoluminescence excitation spectra. In general, these excitation spectra were shown to have a rather complicated structure and were decomposed into three Gaussian bands. It was suggested that two of these excitation bands might be due to indirect excitation of Tb 3+ ions via defects and the third excitation band could be due to direct 4f-5d transition.
Published: 2019

23. Tuning of the Optical Properties of the Transparent Conducting Oxide SrVO3 by Electronic Correlations

Author: Christophe Labbé, Aimane Cheikh, Ulrike Lüders, A. David, Alexis Boileau, Arnaud Fouchet, Philippe Marie, Fabrice Gourbilleau, Laboratoire de cristallographie et sciences des matériaux (CRISMAT), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), and Normandie Université (NU)
Subjects: Materials science, Thin films, Oxide, 02 engineering and technology, 010402 general chemistry, Epitaxy, Plasma oscillation, 01 natural sciences, Pulsed laser deposition, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], chemistry.chemical_compound, Effective mass (solid-state physics), Transparent conductiong oxides, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Charge density, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Indium tin oxide, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, chemistry, Correlated materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Vanadates, 0210 nano-technology, business
Abstract: International audience; The vanadate SrVO3 is a transparent conductor perovskite with optical and electrical properties competing with those of the most-used indium tin oxide material. Although its charge density is comparable to that of metals, SrVO3shows a plasma frequency below the visible range due to strong electronic correlations characterizing the electronic transport in this material and enhancing the effective mass. Therefore, the well-known interplay between the structure and the electronic properties of strongly correlated systems can be used in such transparent conductor to tune the optical properties, as the plasma frequency also depends on the effective mass. In this study, SrVO3films are grown by pulsed laser deposition onto different lattice mismatched perovskite substrates such as SrTiO3, LaAlO3, and (LaAlO3)0.3(Sr2TaAlO6)0.7 at different growth temperatures. The structural, electronic, and optical properties are analyzed, illustrating the influence of the strain on the structure of the films and on a shift of the plasma frequency. The electronic correlations in this new group of transparent conducting oxides can be therefore used as a supplementary lever for the tuning of the functional properties.
Published: 2019
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24. The peculiarities of structural and optical properties of HfO2-based films co-doped with silicon and erbium

Author: Nadiia Korsunska, Fabrice Gourbilleau, Xavier Portier, Christophe Labbé, Larysa Khomenkova, Cardin, Julien, V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (NASU), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Institute of Physics (Kiev), Czech Academy of Sciences [Prague] (CAS), and Institute of Physics [Kiev] (IOP)
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], Photoluminescence, Materials science, Silicon, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, Annealing (metallurgy), [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.PHYS.PHYS-COMP-PH] Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, [SPI.MAT] Engineering Sciences [physics]/Materials, 010402 general chemistry, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Nanoclusters, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Thin film, ComputingMilieux_MISCELLANEOUS, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [CHIM.MATE] Chemical Sciences/Material chemistry, Dopant, business.industry, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, Doping, [CHIM.MATE]Chemical Sciences/Material chemistry, Surfaces and Interfaces, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0104 chemical sciences, Surfaces, Coatings and Films, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, Luminescence
Abstract: International audience; The effect of deposition conditions and further annealing treatment on microstructure and optical properties of (Si,Er)-codoped HfO2 thin films is investigated. The films are grown on silicon substrates by RF magnetron co-sputtering of Si and erbium oxide pellets on a HfO2 target. As-deposited and annealed samples are examined by means of spectroscopic ellipsometry, Fourier transform infrared spectroscopy and photoluminescence method. It is demonstrated that the variation of RF power density allows monitoring the dopant content. An annealing of the samples at 800–1100 °C for 10–60 min in nitrogen atmosphere results in the phase separation and the formation of HfO2, SiO2 and pure silicon phases. The films annealed at 900–950 °C demonstrate the red luminescence that is ascribed to the carrier recombination in Si nanocrystals. Annealing at higher temperatures causes an enhancement of rare-earth luminescence under non-resonant excitation providing an additional argument toward the formation of silicon nanoclusters. The mechanism of the excitation of Er ions is found to be similar to that of Si-rich-SiO2 films doped with rare-earths. The Si nanocrystals are considered as the main sensitizer at visible excitation while the energy transfer from host defects dominates at ultraviolet-deep blue illumination.
Published: 2019

25. Annealing Impact on the Evolution of Crystalline Phases and Emission in Si-Rich HfO2:Nd Films Obtained By Magnetron Sputtering

Author: Larysa Khomenkova, Fabrice Gourbilleau, Dennis Dennis Rivero, Tetyana Torchynska, and Leonardo Gabriel Vega-Macotela
Subjects: Materials science, Analytical chemistry, Sputter deposition, Annealing (glass)
Abstract: Hafnium oxide ﬁlms doped with Si and Nd atoms have been produced by radio-frequency magnetron sputtering in pure argon plasma followed by an annealing in nitrogen atmosphere for 1-60 minutes at the temperature 1000 °C. The effect of post-deposition thermal annealing on the transformation of crystalline phases and photoluminescence spectra was investigated by the non-destructive methods (scanning electronic microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Raman scattering and photoluminescence(PL)). The XRD analysis of these samples demonstrate the phase separation process which depends on the time range and the annealing temperature. In the studed samples, the formation of the tetragonal HfO2, tetragonal SiO2 and cubic Si phases was observed by XRD and confirmed by the Raman study. Thermal annealing influents also on PL spectra where the main bands were detected at 380, 450, 550, 780 and 880 nm. The emission and excitation mechanisms for the Nd radiative defects, and the impact of phase transformation in studied films, are analyzed and discussed.
Published: 2021
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26. Structure and Emission Evolution in Si-Rich HfO2:Pr Films Versus Annealing Temperature

Author: Tetyana Torchynska, Larysa Khomenkova, José Oliveros-García, Fabrice Gourbilleau, and Leonardo Gabriel Vega-Macotela
Subjects: Crystallography, Materials science, Annealing (glass)
Abstract: Pr-doped Si-rich-HfO2 films with specific emitting and structural properties have been prepared by radio-frequency magnetron sputtering using standard pure argon plasma approach. The effect of post-deposition thermal annealing on the transformation of crystalline phases, their compositions and photoluminescence spectra was investigated by means of the Energy Dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), scanning electronic microscopy (SEM), Raman scattering and photoluminescence (PL) methods. Thermal annealing was carried out at 800 °C, 900 °C, 1000 °C and 1100 °C within time of 30 min in nitrogen atmosphere. The SEM images demonstrate the grains with the size about 40 nm. It was observed that the influence of temperature at annealing causes the phase transformation and separation processes. In studied samples, the formation of the tetragonal HfO2 and SiO2 phases, were detected at XRD study after the annealing at 1000 and 1100 °C. PL spectra of these films are complex and demonstrate several PL bands centered at 442, 479, 523, 607, 637 and 716 nm. Their contribution depends on the annealing temperature and governs the shape of total PL spectra. The impact of crystalline phase separation on the peculiarities of PL spectra and XRD are analyzed and discussed.
Published: 2021
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27. Whether Ge-Rich ZrO2 and Ge-Rich HfO2 Materials Have Similar Reaction on Annealing Treatment?

Author: Larysa Khomenkova, Oleksandr Melnichuk, Johannes Heitmann, Xavier Portier, Fabrice Gourbilleau, Emil Agocs, Peter Petrik, Nadiia Korsunska, David Lehninger, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Institute of Physics [Kiev] (IOP), National Academy of Sciences of Ukraine (NASU), Fraunhofer Institute for Photonic Microsystems (Fraunhofer IPMS), Fraunhofer (Fraunhofer-Gesellschaft), Research Institute for Technical Physics and Materials Science (MFA), Hungarian Academy of Sciences (MTA), Institute of Technical Physics and Materials Science (MFA), Centre for Energy Research [Budapest] (MTAE), Hungarian Academy of Sciences (MTA)-Hungarian Academy of Sciences (MTA), Mykola Gogol State University of Nizhyn (MGSUN), and Institute of Applied Physics,TU Bergakademie Freiberg
Subjects: Diffraction, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Annealing (metallurgy), Doping, Analytical chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, Thermal treatment, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, symbols.namesake, Tetragonal crystal system, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], symbols, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Fourier transform infrared spectroscopy, Raman scattering, Monoclinic crystal system
Abstract: Usually, HfO2 and ZrO2 are considered as twin-oxides that have to demonstrate similar reaction on their doping with group IV elements as well as stable tetragonal “high-k” phase. However, in most cases the films produced with different approaches were compared. In this work, both Ge doped HfO2 and Ge-doped ZrO2 films were prepared using the same equipment that allows the same Ge content in both materials to be achieved via monitoring of deposition conditions. Thus, the effect of Ge content and thermal treatment on optical and structural properties of these films was studied to obtain direct experimental confirmation whether the formation of corresponding solid solutions and their phase separation stimulated by thermal treatment is similar for both oxides. The films were grown on 6-inch Si wafers by confocal magnetron sputtering using the deposition unit with installed Ge, HfO2 and ZrO2 targets simultaneously. After the deposition, the wafers with the films were cut on smaller samples and rapid thermal annealing in nitrogen atmosphere was performed at 300-900ºC during 30 s. The samples were investigated by means of spectroscopic ellipsometry, Raman scattering, FTIR and TEM methods. As-deposited pure ZrO2 and Ge-ZrO2 films as well as those annealed at TA≤600°C were found to be amorphous and homogeneous. Annealing at higher TA stimulates a phase separation and a formation of Ge nanoclusters (Ge-ncs). They crystallize at TC=640-700°C showing the tendency to the TC decrease with Ge content rise. An appearance of tetragonal ZrO2 phase in Ge-rich films was observed at TC=680-700°C. Such behavior of ZrO2 host shows the possibility to form Ge-ncs in amorphous matrix at TA=640-680°C that offers success application of such films. Contrary to pure ZrO2 films, as-deposited pure HfO2 films were found to be crystalline. Their doping with [Ge]≥5at% reduces the degree of film crystallinity towards amorphous structure that was found to be stable for TA£600°C. At higher TA the formation of Ge-ncs and tetragonal HfO2 phase was detected. However, this latter was found to be formed at TC=600-670 °C, while the Ge-ncs crystallize at TC=700-800°C. Note that the formation of larger Ge-ncs in Ge-ZrO2 films than that in Ge-HfO2 ones at the same annealing conditions was observed. Obtained results support the theoretical consideration about stability of tetragonal “high-k” phases in annealed films. However, they show also the difference in the reaction of Ge-HfO2 and Ge-ZrO2 materials on thermal treatment followed by phase separation. Its mechanism will be discussed in details.
Published: 2020
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28. Mechanically and thermally stable, transparent electrodes with silver nanowires encapsulated by atomic layer deposited aluminium oxide for organic optoelectronic devices

Author: Fu Rong Zhu, Huimin Chen, Bin Wei, Tao Xu, Hong Lian, Tomasz Marszalek, Shuanglong Wang, Shiwei Wu, Fabrice Gourbilleau, Xavier Portier, Zhitian Ling, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Max Planck Institute for Polymer Research, School of Mechatronic Engineering and Automation, Key Laboratory of Advanced Display and System Applications, Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), and Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Fabrication, Materials science, Organic solar cell, 02 engineering and technology, 010402 general chemistry, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], Biomaterials, chemistry.chemical_compound, Atomic layer deposition, Materials Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Diode, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Energy conversion efficiency, [CHIM.MATE]Chemical Sciences/Material chemistry, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, chemistry, Electrode, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Aluminium oxide, Optoelectronics, 0210 nano-technology, business, Layer (electronics)
Abstract: International audience; Flexible conductive electrodes are essential components for organic optoelectronic devices (OODs). One of the main challenges in the development of flexible OODs is to achieve an optimal combination of photoelectrical properties, enhanced flexibility and stability in transparent conductive electrodes (TCEs). In this work, high-performance flexible nonfullerene organic solar cells (OSCs) and polymer light-emitting diodes (PLEDs) based on TCEs of silver nanowires (AgNWs) encapsulated with an ultra-thin atomic layer deposited aluminum oxide (Al 2 O 3) have been demonstrated. The hybrid AgNWs/Al 2 O 3 composite electrodes with enhanced thermal, ambient and mechanical stabilities enable an efficient flexible transparent electrode with high transmittance and conductivity, which can synergistically optimize the device performance of nonfullerene OSCs and PLEDs. The maximum power conversion efficiency value of 7.03%, as well as a current efficiency of 7.26 cd A À 1 for flexible OSCs and PLEDs are achieved, respectively. Notably, excellent flexibility, long-term atmospheric and thermal stabilities have been systematically investigated and demonstrated. These results provide a new design platform for the fabrication of high-performance, flexible transparent electrodes, which can be further explored in a wide range of organic optoelectronics field.
Published: 2020
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29. Correlation between composition, microstructure, and emission properties in Nd-doped Si-rich Si oxynitride films: investigation into the nature of the sensitizer

Author: A.W. Kleyn, W. Jin, Chuanhui Liang, Fabrice Gourbilleau, C. A. Chen, D. P. Wang, Christophe Labbé, K. Z. Liu, D. C. Meng, Y. T. An, Julien Cardin, China Academy of Engineering Physics (CAEP), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), This work was financially supported by the Natural Science Foundation of China (Grant Nos. 11504343 and 51701194), ANR-08-NANO-0005,DAPHNES,Dispositifs Appliqués à la Photonique à base de NÉodyme et de Silicium(2008), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), and Cardin, Julien
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], Photoluminescence, Materials science, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, Band gap, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.PHYS.PHYS-COMP-PH] Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], Analytical chemistry, Bioengineering, 02 engineering and technology, [SPI.MAT] Engineering Sciences [physics]/Materials, 010402 general chemistry, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], Condensed Matter::Materials Science, X-ray photoelectron spectroscopy, Sputtering, Ellipsometry, General Materials Science, Electrical and Electronic Engineering, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [CHIM.MATE] Chemical Sciences/Material chemistry, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Mechanical Engineering, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, Dangling bond, General Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0104 chemical sciences, Amorphous solid, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Mechanics of Materials, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology
Abstract: International audience; Rare earth (RE) ions doped in Si-based materials, compatible with Si technology, are promising compounds with regards to optical communication and energy conversion. In this article, we show the emission properties of Nd-doped Si-rich Si oxynitride (Nd-SRSON) films, and their dependence on the dangling bond density and the nature of the sensitizer. These films were prepared by reactive magnetron sputtering and post-annealing. The film composition, microstructure, and emission properties were investigated as a function of deposition parameters and annealing temperatures. Both Fourier transform infrared (FTIR) and ellipsometry spectroscopy measurements have confirmed that the sample composition (Si/N ratio) can be carefully tuned by varying the ratio of reactive nitrogen to argon in the sputtering plasma. Moreover, FTIR and x-ray photoelectron spectroscopy measurements demonstrate the existence of both nitrogen and oxygen dangling bonds (N· and O·) in as-deposited samples. These dangling bonds were passivated during annealing. Under non-resonant excitation at 488 nm, the films exhibit a significant photoluminescence (PL) signal from Nd3+ ions demonstrating the occurrence of an effective sensitization of Nd$^{3+}$ ions in the host matrix. Both PL excitation and ellipsometry results (the energy band gap from new amorphous model) exclude the sensitization by an exciton with energy over the band gap, whereas the presence of Si agglomerates, at the atomic scale, have been identified as effective sensitizers towards Nd$^{3+}$ ions. This work not only provides knowledge to optimize Si-based materials for favorable emission properties, but also, presents a universal methodology to investigate the nature of sensitizers for RE emitters. This allows one to find correlations between composition, microstructure, and emission properties.
Published: 2018
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30. Monolithic crystalline silicon solar cells with SiN layers doped with Tb3+ and Yb3+ rare-earth ions

Author: Ing-Song Yu, Fabrice Gourbilleau, Shao-Chun Wu, Julien Cardin, Lucile Dumont, Christophe Labbé, Department of materials Science and Engineering, National Dong-Hwa University, Shou-Feng, Hualien 974, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), PHC Orchid, Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), and Normandie Université (NU)
Subjects: Photoluminescence, Materials science, 02 engineering and technology, engineering.material, 010402 general chemistry, 01 natural sciences, 7. Clean energy, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], chemistry.chemical_compound, Coating, Geochemistry and Petrology, Ellipsometry, Crystalline silicon, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Energy conversion efficiency, Doping, General Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Silicon nitride, chemistry, engineering, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business
Abstract: International audience; In this study, we propose the fabrication of monolithic crystalline silicon solar cells with Tb 3þ and Yb 3þ-doped silicon nitride (SiN x) layers by low-cost screen-printing methods. The performances of c-Si solar cells can be enhanced by rare-earth ions doped SiN x layers via the mechanism of spectrum conversion. These SiN x doped and codoped thin films were deposited by reactive magnetron co-sputtering and integrated as the antireflection coating layers in c-Si solar cells. The characterizations of SiN x , SiN x :Tb 3þ and SiN x :Tb 3þ-Yb 3þ thin films were conducted by means of photoluminescence, Rutherford backscattering spectroscopy, Ellipsometry spectroscopy and Fourier transform infrared measurements. Their composition and refractive index was optimized to obtain good anti-reflection coating layer for c-Si solar cells. Transmission electron microscopy performs the uniform coatings on the textured emitter of c-Si solar cells. After the metallization process, we demonstrate monolithic c-Si solar cells with spectrum conversion layers, which lead to a relative increase by 1.34% in the conversion efficiency.
Published: 2018
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31. Enhanced photovoltaic performance of inverted polymer solar cells through atomic layer deposited $Al_{2}$$O_{3}$ passivation of ZnO-nanoparticle buffer layer

Author: Fabrice Gourbilleau, Yulai Gao, Didier Stiévenard, Bin Wei, Xingwei Ding, Cunping Qin, Xavier Portier, Chunya Li, Tao Xu, Zhenyu Tang, Shuanglong Wang, Key Laboratory of Advanced Display and System applications, Shanghai University, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), and Physique-IEMN (PHYSIQUE-IEMN)
Subjects: Materials science, Photoluminescence, Passivation, Bioengineering, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, 7. Clean energy, Polymer solar cell, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], General Materials Science, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Deposition (law), chemistry.chemical_classification, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Mechanical Engineering, Energy conversion efficiency, General Chemistry, Polymer, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, chemistry, 13. Climate action, Mechanics of Materials, Transmission electron microscopy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, Layer (electronics)
Abstract: International audience; In this work, an atomic layer deposited (ALD) $Al_{2}$$O_{3}$ ultrathin layer was introduced to passivate the ZnO-nanoparticle (NP) buffer layer of inverted polymer solar cells (PSCs) based on P3HT:PCBM. The surface morphology of the ZnO-NP/$Al_{2}$$O_{3}$ interface was systematically analyzed by using a variety of tools, in particular transmission electron microscopy (TEM), evidencing a conformal ALD-$Al_{2}$$O_{3}$ deposition. The thickness of the $Al_{2}$$O_{3}$ layers was optimized at the nanoscale to boost electron transport of the ZnO-NP layer, which can be attributed to the suppression of oxygen vacancy defects in ZnO-NPs confirmed by photoluminescence measurement. The optimal inverted PSCs passivated by ALD-$Al_{2}$$O_{3}$ exhibited an ~22% higher power conversion efficiency than the control devices with a pristine ZnO-NP buffer layer. The employment of the ALD-$Al_{2}$$O_{3}$ passivation layer with precisely controlled thickness provides a promising approach to develop high efficiency PSCs with novel polymer materials.
Published: 2018
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32. Origin of Pr 3+ luminescence in hafnium silicate films: combined atom probe tomography and TEM investigations

Author: Georges Beainy, Celia Castro, Christophe Labbé, Fabrice Gourbilleau, Larysa Khomenkova, Rémi Demoulin, Philippe Pareige, Etienne Talbot, Groupe de physique des matériaux (GPM), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), and Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, phase transformation, Biomedical Engineering, chemistry.chemical_element, Bioengineering, 02 engineering and technology, Atom probe, 010402 general chemistry, 01 natural sciences, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], chemistry.chemical_compound, law, General Materials Science, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, hafnium silicates, rare-earth ions, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], General Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Silicate, 0104 chemical sciences, Hafnium, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, chemistry, atom probe tomography, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Physical chemistry, photoluminescence, 0210 nano-technology, Luminescence
Abstract: International audience; Origin of Pr 3+ luminescence in hafnium silicate films: combined atom probe tomography and TEM investigations To cite this article: Rémi Demoulin et al 2018 Nano Futures 2 035005 View the article online for updates and enhancements. Related content Thermal stability of high-k Si-rich HfO2 layers grown by RF magnetron sputtering L Khomenkova, X Portier, J Cardin et al.-High-k Hf-based layers grown by RF magnetron sputtering L Khomenkova, C Dufour, P-E Coulon et al.-XRD and EXAFS studies on the structure of Er3+-doped SiO2–HfO2 glass-ceramic waveguides: Er3+-activated HfO2 Abstract Structural, chemical, and luminescence properties of Pr 3+-doped HfSiO x layers fabricated by radio-frequency magnetron sputtering were examined as a function of annealing temperature. Phase separation between SiO 2 and HfO 2 as well as the location of Pr 3+ dopants were investigated using atom probe tomography and transmission electron microscopy while optical properties of Pr 3+ ions were studied using photoluminescence measurements. As a result, (i) we evidenced the location of the Pr 3+ dopants in the HfO 2 phase while the SiO 2 phase was discovered to be free of these dopants, (ii) the HfO 2 phase was identified to crystallize in the cubic phase until 1050 °C annealing, (iii) no Pr clusters were detected as function of annealing, and (iv) luminescence properties were discussed in regard to the location of Pr in the HfO 2 cubic phase.
Published: 2018
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33. Local Schottky contacts of embedded Ag nanoparticles in Al 2 O 3 /SiN x :H stacks on Si: a design to enhance field effect passivation of Si junctions

Author: Tao Xu, Fabrice Gourbilleau, Remy Bernard, D Yarekha, Xavier Portier, O Ibrahim Elmi, E Okada, S Ouendi, M Y Chen, Bin Wei, Odile Cristini-Robbe, Didier Stiévenard, Virologie et pathogenèse virale (VPV), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Département d'Astrophysique, de physique des Particules, de physique Nucléaire et de l'Instrumentation Associée (DAPNIA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), NINGBO UNIVERSITY, Ningbo University, Université de Djibouti, Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 (PhLAM), Université de Lille-Centre National de la Recherche Scientifique (CNRS), Key Laboratory of Advanced Display and System applications, Shanghai University, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Physique - IEMN (PHYSIQUE - IEMN), ANR-11-EQPX-0020,GENESIS,Groupe d'Etudes et de Nanoanalyses des Effets d'IrradiationS(2011), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Physique-IEMN (PHYSIQUE-IEMN)
Subjects: silver nanoparticles, Materials science, Passivation, Field effect, Nanoparticle, Bioengineering, 02 engineering and technology, 01 natural sciences, FDTD simulation, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], 0103 physical sciences, General Materials Science, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Photocurrent, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Mechanical Engineering, Schottky diode, General Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Evaporation (deposition), [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Nanosphere lithography, Optoelectronics, Al 2 O 3 /SiN x stacks, Electric current, field effect passivation, 0210 nano-technology, business
Abstract: International audience; This paper describes an original design leading to the field effect passivation of Si n +-p junctions. Ordered Ag nanoparticle (Ag-NP) arrays with optimal size and coverage fabricated by means of nanosphere lithography and thermal evaporation, were embedded in ultrathin-Al 2 O 3 /SiN x :H stacks on the top of implanted Si n +-p junctions, to achieve effective surface passivation. One way to characterize surface passivation is to use photocurrent, sensitive to recombination centers. We evidenced an improvement of photocurrent by a factor of 5 with the presence of Ag NPs. Finite-difference time-domain (FDTD) simulations combining with semi-quantitative calculations demonstrated that such gain was mainly due to the enhanced field effect passivation through the depleted region associated with the Ag-NPs/Si Schottky contacts.
Published: 2018
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34. On the interplay between Si-Er-O segregation and erbium silicate (Er 2 Si 2 O 7 ) formation in Er-doped SiO x thin films

Author: Etienne Talbot, Fabrice Gourbilleau, C. Frilay, Georges Beainy, Philippe Pareige, Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), and Normandie Université (NU)
Subjects: Materials science, Photoluminescence, Nanostructure, Luminescence, Silicon, Nanoparticle, chemistry.chemical_element, 02 engineering and technology, Photochemistry, 01 natural sciences, Nanoclusters, [SPI.MAT]Engineering Sciences [physics]/Materials, Erbium, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], 0103 physical sciences, Materials Chemistry, Atomic scale structure, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Optical properties, Oxide materials, Mechanical Engineering, Rare earth alloys and compounds, Doping, Metals and Alloys, Nanostructured materials, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Atom probe tomography, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, chemistry, Semiconductors, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology
Abstract: International audience; Er-doped silica or rich-silicon oxide has been widely studied as 1.54 mm emitters. The incorporation of Si-nanoclusters is known for improving luminescence yield of Er 3þ ions through an efficient sensitization of the neighboring rare earth ions. The aim of this work is to investigate the influence of Silicon excess and Erbium concentration on the formation of silicon nanoclusters and Er-rich phase responsible of the quenching of 1.54 mm emission. Atom probe tomography and photoluminescence spectroscopy were used to explore the nanostructure and optical activity of Er-doped silicon rich silica. We present a direct evidence that both silicon excess and Er concentration influence the growth of Si nanoclusters, the formation of Er-Si-O phase and the luminescence of both Si nanoclusters and Er 3þ ions. We explain these finding in relation with the growth mechanism of nanoparticles and the presence of a Snowman-like Janus morphology between silicon and Erbium silicates nanoparticles. In this contribution, we deciphered the nanoscale structure spatial correlations between Er and Si atoms in Er doped SiO X which remained unclear for a long time.
Published: 2018
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35. (Invited) Enhancing the Blue Emission in Ce Doped Silicon Oxynitrides Thin Films for Electroluminescence Device Applications

Author: Christian Dufour, Florian Ehre, Christophe Labbé, David C. Ingram, Wojciech M. Jadwisienczak, Fabrice Gourbilleau, O. Blázquez, Blas Garrido, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Universitat de Barcelona (UB), Micronanotecnologies i nanoscòpies per dispositius electrònics i fotònics [Spain] (LENS, MIND-IN2UB), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), and Departament d'Electronica (MIND-IN2UB)
Subjects: [PHYS]Physics [physics], Materials science, Silicon, business.industry, 05 social sciences, Doping, chemistry.chemical_element, Electroluminescence, Blue emission, chemistry, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], 0502 economics and business, Optoelectronics, 050207 economics, Thin film, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], business, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2018
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36. (Invited) Naked Eye Blue Emission in Ce 3+ Codoped SiO x N y : Toward Si-Based Light-Emitting Devices

Author: Florian Ehre, Christian Dufour, Oriol Blázquez, Blas Garrido, Wojciech Jadwisienczak, David C. Ingram, Fabrice Gourbilleau, Christophe Labbé, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Universitat de Barcelona (UB), Department of Electronics and Biomedical Engineering / Departament d'Enginyeria Electrònica i Biomèdica [Spain] (DEBE), Institute of Nanoscience and Nanotechnology (IN2UB), Universitat Autònoma de Barcelona (UAB), Edwards Accelerator Laboratory, Ohio University, and Department of Physics and Astronomy, Ohio University
Subjects: [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], [SPI]Engineering Sciences [physics], [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract: Rare earth (RE) doped silicon host matrices has been broadly investigated to procure light emitting sources for integrated optoelectronics devices using the RE inter-4f transitions. Classically, those transitions are partially allowed and result in a very low absorption cross section inducing a non-efficient excitation. Due to its 5d-4f transitions, Ce3+ ion is quite different from other RE3+ ions due to a large absorption cross section (10-19 cm-2) as compared to the other RE3+ ions (10-21 cm-2).[1] Furthermore, due to its single valence d-orbital electron, the 5d band is strongly dependent on the local environment, resulting typically in a large Stokes shift depending on the host matrix composition.[2] Ce-doped SiOxNy films have been deposited by magnetron reactive sputtering from Si and CeO2 targets under nitrogen reactive gas atmosphere, with a typical thickness of 120 nm. Three investigation approaches were explored. In the first one samples grown with nitrogen highly rich plasma and a low Ce concentration (0.3 at.%) were tested. Photoluminescence (PL) experiments show a wide blue emission band ranging from 400 to 650 nm under UV photons excitation. Reference samples grown with lower nitrogen content did not show any visible emission. To explain the blue emission origin, we have studied extensively the role of different RE ions emitting centers in Ce-doped SiOxNy films (e.g. band tails, CeO2, Ce clusters, Ce3+ ions), with different activation scenarios. The results confirmed that blue emission is mainly due to the Ce3+ ion. In addition, based on refractive index measurements, the Ce-doped SiOxNy films compositions were deduced from a Bruggeman effective medium model, confirming the presence of Si3N4 and SiO2 phases. Furthermore, the presence of those phases was confirmed independently by their bonding signatures identified by infrared spectroscopy (FTIR) analysis. By means of photoluminescence excitation spectroscopy (PLE), a wide excitation range from 250 to 400 nm was evidenced and various excitation channels of Ce3+ ions involving direct or indirect mechanisms were proposed. In the second approach, we focused on samples grown at high nitrogen flow, where the effect of Ce3+ concentration variation was investigated. Under UV excitation, a strong blue emission is visible to the naked eyes for SiOxNy sample doped with high Ce3+ concentration (6 at. % as determined by RBS measurements). The external quantum efficiency was measured for the selected best emitting samples with help of integrating sphere. No saturation of the PL intensity was observed, demonstrating the absence of Ce clusters and/or silicate phase formation due do the nitrogen content.[3] We believe that this result is very promising for considering silicon based emitting applications. Finally, in the third approach we measured electroluminescence (EL) from Ce-doped SiOxNy prototype devices. Signal evolution was investigated as the function of the N flow, the Ce concentration and the inclusion of Al dopants with the aim to improve the electrical conductivity. The influence of these factors on observed EL was studied through the conduction mechanisms. [1] J.M. Ramírez, A. Ruiz-Caridad, J. Wojcik, A.M. Gutierrez, S. Estradé, F. Peiró, P. Sanchís, P. Mascher, B. Garrido, "Luminescence properties of Ce3+ and Tb3+ co-doped SiOxNy thin films: Prospects for color tunability in silicon-based hosts", J. Appl. Phys., 119 (2016) 113108. [2] J. Li, O.H.Y. Zalloum, T. Roschuk, C.L. Heng, J. Wojcik, P. Mascher, "Light Emission from Rare-Earth Doped Silicon Nanostructures", Advances in Optical Technologies, 2008 (2008) 10. [3] C. Labbé, Y.T. An, G. Zatryb, X. Portier, A. Podhorodecki, P. Marie, C. Frilay, J. Cardin, F. Gourbilleau, "Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films", Nanotech., 28 (2017) 115710 (115714pp).
Published: 2018
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37. Frequency Conversion Layers for Si Solar Cell Efficiency Improvement

Author: Fabrice Gourbilleau, Lucile Dumont, Anaïs Gouesmel, Hocine Merabet, Ing-Song Yu, Christophe Labbé, Julien Cardin, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], chemistry.chemical_compound, law, 0103 physical sciences, Solar cell, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Thin layers, business.industry, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Microstructure, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Solar cell efficiency, Silicon nitride, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, Luminescence, business, Layer (electronics)
Abstract: International audience; SiNx and SiNx: Tb3+ thin layers deposited by reactive magnetron co-sputtering have been studied with the aim of optimizing the light management in Si solar cells. Those Si-based layers are developed to be compatible with the Si-PV technology. An efficient energy transfer between matrix and terbium ions has been demonstrated and optimized. The layer composition and microstructure as well as its optical properties have been analyzed to favor the required optical properties for achieving a good solar cell, i.e., good anti-reflective properties and high luminescence emission intensity. Finally a Tb-doped SiNx thin film has been deposited on the top of a Si solar cells and solar cell characteristics studied.
Published: 2017
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38. Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films

Author: Philippe Marie, Christophe Labbé, Fabrice Gourbilleau, Julien Cardin, Xavier Portier, Artur Podhorodecki, Yong-Tao An, Cédric Frilay, G. Zatryb, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Department of Experimental Physics, Polonium Partenariat Hubert Curien PHC (PHC N° 27720WC), ANR-13-BS09-0020,GENESE,Gestion de la lumièrE pour la future géNération de cEllules SolairEs(2013), ANR-10-LABX-0009,EMC3,Energy Materials and Clean Combustion Center(2010), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), and Normandie Université (NU)
Subjects: Photoluminescence, Silicon oxynitride, Materials science, Annealing (metallurgy), Analytical chemistry, FOS: Physical sciences, Bioengineering, 02 engineering and technology, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, chemistry.chemical_compound, 0103 physical sciences, General Materials Science, Electrical and Electronic Engineering, Thin film, Silicon oxide, 010302 applied physics, Condensed Matter - Materials Science, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Mechanical Engineering, Doping, Materials Science (cond-mat.mtrl-sci), General Chemistry, 021001 nanoscience & nanotechnology, Amorphous solid, chemistry, Silicon nitride, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, Physics - Optics, Optics (physics.optics)
Abstract: Terbium doped silicon oxynitride host matrix is suitable for various applications such as light emitters compatible with CMOS technology or frequency converter systems for photovoltaic cells. In this study, amorphous Tb3+ ion doped nitrogen-rich silicon oxynitride (NRSON) thin films were fabricated using a reactive magnetron co-sputtering method, with various N2 flows and annealing conditions, in order to study their structural and emission properties. Rutherford backscattering (RBS) measurements and refractive index values confirmed the silicon oxynitride nature of the films. An electron microscopy analysis conducted for different annealing temperatures (T A) was also performed up to 1200 {\textdegree}C. Transmission electron microscopy (TEM) images revealed two different sublayers. The top layer showed porosities coming from a degassing of oxygen during deposition and annealing, while in the region close to the substrate, a multilayer-like structure of SiO2 and Si3N4 phases appeared, involving a spinodal decomposition. Upon a 1200 {\textdegree}C annealing treatment, a significant density of Tb clusters was detected, indicating a higher thermal threshold of rare earth (RE) clusterization in comparison to the silicon oxide matrix. With an opposite variation of the N2 flow during the deposition, the nitrogen excess parameter (Nex) estimated by RBS measurements was introduced to investigate the Fourier transform infrared (FTIR) spectrum behavior and emission properties. Different vibration modes of the Si--N and Si--O bonds have been carefully identified from the FTIR spectra characterizing such host matrices, especially the 'out-of-phase' stretching vibration mode of the Si--O bond. The highest Tb3+ photoluminescence (PL) intensity was obtained by optimizing the N incorporation and the annealing conditions. In addition, according to these conditions, the integrated PL intensity variation confirmed that the silicon nitride-based host matrix had a higher thermal threshold of rare earth clusterization than its silicon oxide counterpart. Analysis of time-resolved PL intensity versus T A showed the impact of Tb clustering on decay times, in agreement with the TEM observations. Finally, PL and PL excitation (PLE) experiments and comparison of the related spectra between undoped and Tb-doped samples were carried out to investigate the impact of the band tails on the excitation mechanism of Tb3+ ions.
Published: 2017
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39. RBS Analysis of Down-conversion Layers Comprising Two Rare-Earth Elements

Author: Wojciech M. Jadwisienczak, Florian Ehre, David C. Ingram, Christophe Labbé, Fabrice Gourbilleau, Edwards Accelerator Laboratory, Ohio University, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), and Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Nuclear reaction, Ytterbium, Materials science, Silicon, Scattering, Coulomb barrier, chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, 0104 chemical sciences, Cerium, chemistry.chemical_compound, chemistry, Silicon nitride, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Atomic physics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, Spectroscopy, ComputingMilieux_MISCELLANEOUS
Abstract: Rutherford Backscattering Spectroscopy (RBS) of samples containing two rare-earth elements is difficult owing to the small mass separation of even the lightest and heaviest members of the group. In studies of the growth of silicon nitride down-conversion layers, compatible with silicon photovoltaic technology, 2-3 MeV RBS has been combined with RBS at 5 MeV and alpha PIXE, to determine the composition of samples grown with different amounts of cerium and ytterbium. The films were produced using reactive magnetron co-sputtering. Conventional RBS at 2.2 MeV is used to determine the nitrogen and oxygen and silicon content of the films. At this energy, elements from carbon upwards have scattering cross-sections determined by the Coulomb potential. However, the cerium and ytterbium peaks at this energy merge into one and make it very difficult to determine the ratio of these elements and the absolute amount of each element. At 5 MeV sufficient separation was achieved between the cerium and ytterbium peaks that their ratio and absolute amount could be measured. At this energy the scattering from these elements is still determined by the Coulomb potential. For all the other elements in the sample the Coulomb barrier has been exceeded such that data from them is unusable. Care also needs to be taken to ensure there is no interference between the rare-earth scattering peaks in the spectrum and products of nuclear reactions from the lower Z-elements.
Published: 2017
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40. Photochemical Preparation of Silver Nanoparticles Supported on Zeolite Crystals

Author: Svetlana Mintova, Jean-Pierre Gilson, Roy Aad, Biao Dong, Moussa Zaarour, Christian Dufour, Fabrice Gourbilleau, Julien Cardin, Richard Retoux, Mohamad El Roz, Laboratoire catalyse et spectrochimie (LCS), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Institut de Chimie du CNRS (INC)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Laboratoire de cristallographie et sciences des matériaux (CRISMAT), École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Projet Région Basse-Normandie Solaire, Normandie Université (NU)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Normandie Université (NU)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA)
Subjects: Plasmons, Silver, Materials science, 02 engineering and technology, engineering.material, 010402 general chemistry, Photochemistry, 01 natural sciences, Homogeneous distribution, Silver nanoparticle, Absorbance, Suspensions, Electrochemistry, General Materials Science, Zeolite, Spectroscopy, Plasmon, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [CHIM.MATE]Chemical Sciences/Material chemistry, Surfaces and Interfaces, Faujasite, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Nanocrystal, Transmission electron microscopy, Zeolites, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], engineering, Irradiation, 0210 nano-technology
Abstract: International audience; A facile and rapid photochemical method to prepare supported silver nanoparticles (Ag-NPs) in a suspension of faujasite-type (FAU) zeolite nanocrystals is described. Silver cations are introduced by ion exchange in the zeolite and subsequently irradiated with a Xe-Hg lamp (200 W) in the presence of a photoactive reducing agent (2-hydroxy-2-methylpropiophenone). UV-Vis characterization indicates that irradiation time and intensity (I0) influence significantly the amount of silver cations reduced. The full reduction of silver cations takes place after irradiation (I0 = 100 % for 60 s), and a plasmon band of Ag-NPs appears at 380 nm. Transmission electron microscopy (TEM) combined with theoretical calculation of the plasmon absorbance band using Mie Theory shows that the Ag-NPs, stabilized in the micropores and on the external surface of the FAU zeolite nanocrystals, have almost a spheroidal shape with diameters of 0.75 and 1.12 nm, respectively. Ag-NPs, with a homogeneous distribution of size and morphology, embedded in a suspension of FAU zeolite are very stable (ca. 8 months), even without any stabilizers or capping agents.
Published: 2014
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41. Comparative Investigation of Structural and Optical Properties of Si-Rich Oxide Films Fabricated by Magnetron Sputtering

Author: Isaac Balberg, Larysa Khomenkova, Fabrice Gourbilleau, Andrian Kuchuk, V. V. Strelchuk, M. Baran, N. Korsunska, Philippe Marie, O.F. Kolomys, J. Jedrzejewski, V. P. Kladko, Y. Goldstein, V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (NASU), Racah Institute of Physics, The Hebrew University of Jerusalem (HUJ), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), and Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Photoluminescence, Silicon, Annealing (metallurgy), Exciton, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, symbols.namesake, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electron paramagnetic resonance, 010302 applied physics, magnetron sputtering, General Engineering, Sputter deposition, 021001 nanoscience & nanotechnology, Amorphous solid, Si-rich oxide, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, symbols, 0210 nano-technology, Raman scattering
Abstract: RF magnetron sputtering of two separate silicon and oxide (SiO2 or Al2O3) targets in pure argon plasma was used for deposition of Six(SiO2)1-x and Six(Al2O3)1-x films with x=0.15-0.7 on long fused quarts substrate. The effect of post-fabrication treatments on structural and light emitting properties of the films with different x values was investigated by means of Raman scattering, electron paramagnetic resonance and X-ray diffraction as well as by photoluminescence (PL) methods. The formation of amorphous Si clusters upon deposition process was found for the both types of films. The annealing treatment at 1150°C during 30 min results in formation of Si nanocrystallites (Si-ncs). The latter were found to be larger in Six(Al2O3)1-x films than that in Six(SiO2)1-x counterparts with the same x values and are under tensile stresses. The investigation of photoluminescence properties of annealed films of both types revealed the appearance of visible-near infrared light emission. The Six(SiO2)1-x films demonstrated one broad PL band which peak position shifts gradually to from 1.4 eV to 1.8 eV with the x decrease. Contrary to this, for the Six(Al2O3)1-x films two overlapped PL bands were observed in the 1.4-2.4 eV spectral range with peak positions at ~2.1 eV and ~1.7 eV accompanied by near-infrared tail. Comparative analysis of PL spectra of both types samples showed that the main contribution to PL spectra of Six(SiO2)1-x films is given by exciton recombination in the Si-ncs whereas PL emission of Six(Al2O3)1-x films is caused mainly by carrier recombination either via defects in matrix or via electron states at the Si-ncs/matrix interface.
Published: 2013
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42. Highly Efficient Infrared Quantum Cutting in Tb3+−Yb3+Codoped Silicon Oxynitride for Solar Cell Applications

Author: Magali Morales, Fabrice Gourbilleau, Christophe Labbé, Julien Cardin, Yong-Tao An, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), and Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Silicon oxynitride, Photoluminescence, Photon, Materials science, Infrared, 02 engineering and technology, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, Solar cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Thin film, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Semiconductor, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Quantum efficiency, 0210 nano-technology, business
Abstract: International audience; A high efficiency infrared quantum cutting effect in a Tb3+–Yb3+ codoped silicon oxynitride system is demonstrated. The thin films are deposited on Si substrates by reactive magnetron co-sputtering of a Si target topped with Tb4O7 and Yb2O3 chips under pure nitrogen plasma. The photoluminescence dynamics are investigated, revealing a quantum efficiency of this system at 980 nm up to 197% for the higher Yb3+ concentration. Thus, via a cooperative transfer mechanism between Tb3+ and Yb3+, an absorbed UV–visible photon gives rise to almost two emitted IR photons. Such a down-conversion effect is demonstrated upon indirect excitation of energy donors, via defect states in the host matrix. These down-converter films could be directly and easily integrated on top of the Si-based solar cell to improve the photoelectric conversion efficiency at a lower cost. An evaluation of the additional external quantum efficiency is deduced from this optical system and found to be almost 2%.
Published: 2013
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43. Undoped and Nd3+ doped Si-based single layers and superlattices for photonic applications

Author: Larysa Khomenkova, Christophe Labbé, Xavier Portier, Fabrice Gourbilleau, and M. Carrada
Subjects: 010302 applied physics, Photoluminescence, Materials science, Annealing (metallurgy), Superlattice, Doping, Analytical chemistry, 02 engineering and technology, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 7. Clean energy, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Nanoclusters, Amorphous solid, Condensed Matter::Materials Science, Transmission electron microscopy, 0103 physical sciences, Materials Chemistry, Light emission, Electrical and Electronic Engineering, 0210 nano-technology
Abstract: This work presents the benefits of the superlattice approach to control light emission properties of materials with Si nanoclusters and rare‐earth ions. The undoped and Nd3+‐doped both Si‐rich‐SiO2 single layers and Si‐rich‐SiO2/SiO2 superlattices were grown by radio frequency magnetron sputtering. Their properties were investigated by means of spectroscopic ellipsometry, Fourier infrared transmission spectroscopy, transmission electron microscopy, and photoluminescence (PL) methods versus deposition conditions, annealing treatment, and superlattice design (doping and thickness of alternated sublayers). An intense Nd3+ emission from as‐deposited single layers and superlattices was observed. The lower annealing temperature (below 900 °C) of the single layers and superlattices favors the formation of amorphous Si clusters that act as effective sensitizers of rare‐earth ions. The highest Nd3+ PL intensity was achieved after a conventional annealing at about 600–800 °C in nitrogen flow for all samples. Crystallized Si‐nanoclusters were formed in Si‐rich‐SiO2 single layers upon annealing at 1000–1100 °C, whereas their formation in the superlattices occurred at higher temperatures (1100–1150 °C). The mechanism of Nd ions' excitation via energy transfer from Si‐nanoclusters and/or matrix defects, if any, is discussed.
Published: 2013
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44. Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO2:Er doped with Si-nanoclusters

Author: Fabrice Gourbilleau, Richard Rizk, M Shah, M Wojdak, Anthony J. Kenyon, and Hasitha Jayatilleka
Subjects: Photoluminescence, Materials science, business.industry, Biophysics, chemistry.chemical_element, General Chemistry, Purcell effect, Condensed Matter Physics, Biochemistry, Atomic and Molecular Physics, and Optics, Electrical contacts, Indium tin oxide, Active layer, Nanoclusters, Erbium, chemistry, Optoelectronics, Thin film, business
Abstract: During the fabrication of MOS light emitting devices, the thin film of active material is usually characterized by photoluminescence measurements before electrical contacts are deposited. However, the presence of a conductive contact layer can alter the luminescent properties of the active material. The local optical density of states changes due to the proximity of luminescent species to the interface with the conductive medium (the top electrode), and this modifies the radiative rate of luminescent centers within the active layer. In this paper we report enhancement of the observed erbium photoluminescence rate after deposition of indium tin oxide contacts on thin films of SiO 2 :Er containing silicon nanoclusters, and relate this to Purcell enhancement of the erbium radiative rate.
Published: 2013
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45. Memory effect in nanostructured Si-rich hafnia films

Author: Larysa Khomenkova, Fabrice Gourbilleau, Abdelilah Slaoui, and Xavier Portier
Subjects: Permittivity, Materials science, biology, Spinodal decomposition, Annealing (metallurgy), Dielectric, Hafnia, biology.organism_classification, Amorphous solid, law.invention, Chemical engineering, law, Phase (matter), Crystallization
Abstract: Microstructral and charge-trap properties of single Hf-silicate dielectric films are presented versus annealing treatment. The as-grown films were found to be homogeneous and amorphous. It is shown that annealing treatment results in the formation of alternated Hf-rich and Si-rich layers. The mechanism responsible for this phenomenon is found to be surface directed spinodal decomposition. The increase of annealing temperature up to 1000-1100°C resulted in the crystallization of Hf-rich phase. The stability of its tetragonal phase caused an enhancement of film permittivity was observed. The evolution of charge trapping properties of the films results in the memory effect which nature was discussed.
Published: 2013
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46. Blue highly fluorescent boron difluoride complexes based on phthalazine-pyridine

Author: S. Boudin, Thi Minh Ha Vuong, Fabrice Gourbilleau, Hien M. Nguyen, Jennifer Weimmerskirch-Aubatin, Nathalie Bar, Jean-François Lohier, Christophe Labbé, Didier Villemin, Tung Thanh Dang, Laboratoire de chimie moléculaire et thioorganique (LCMT), Centre National de la Recherche Scientifique (CNRS)-Institut Normand de Chimie Moléculaire Médicinale et Macromoléculaire (INC3M), Institut de Chimie du CNRS (INC)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Université Le Havre Normandie (ULH), Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de cristallographie et sciences des matériaux (CRISMAT), École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC), Hanoi National University of Education (HNUE), Normandie Université (NU)-Institut Normand de Chimie Moléculaire Médicinale et Macromoléculaire (INC3M), Normandie Université (NU)-Université Le Havre Normandie (ULH), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Le Havre Normandie (ULH), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Normandie Université (NU)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA)
Subjects: Photoluminescence, 010405 organic chemistry, General Chemistry, 010402 general chemistry, Photochemistry, 01 natural sciences, Fluorescence, Catalysis, 0104 chemical sciences, chemistry.chemical_compound, chemistry, Pyridine, Materials Chemistry, OLED, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Cyclic voltammetry, Phthalazine, Spectroscopy, HOMO/LUMO
Abstract: International audience; Three new boron difluoride complexes based on phthalazine–pyridine, denoted (6), (7) and (8), have been synthesized and their photophysical and electrochemical properties have been studied. Solutions of these new BF 2-complexes exhibit an intense blue fluorescence under UV light at low concentrations. Fluorescence quantum yields (QYs) have been determined by photoluminescence (PL) spectroscopy and decay times (t) by semi-empirical methods. QYs of (6), (7) and (8) vary from 25% to 79%. HOMO and LUMO energy levels have been estimated by cyclic voltammetry and PL spectroscopy. The HOMO and LUMO energy levels, at BÀ5.3 eV and BÀ2.3 eV, respectively, make these new complexes interesting candidates as blue emitters in OLED applications.
Published: 2016
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47. SiNx:Tb3+–Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process

Author: Fabrice Gourbilleau, Patrizio Benzo, Lucile Dumont, David C. Ingram, Marzia Carrada, Wojciech M. Jadwisienczak, Christophe Labbé, Julien Cardin, A. L. Richard, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Nano-Optique et Nanomatériaux pour l'optique (CEMES-NeO), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Ohio University, ANR-13-BS09-0020,GENESE,Gestion de la lumièrE pour la future géNération de cEllules SolairEs(2013), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Ytterbium, Materials science, Silicon, Annealing (metallurgy), Down-conversion, rare earth, Analytical chemistry, FOS: Physical sciences, chemistry.chemical_element, Terbium, Nanotechnology, 02 engineering and technology, Nitride, silicon solar cell, 7. Clean energy, 01 natural sciences, Ion, [SPI.MAT]Engineering Sciences [physics]/Materials, 0103 physical sciences, Power density, 010302 applied physics, Condensed Matter - Materials Science, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Renewable Energy, Sustainability and the Environment, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, Microstructure, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, SiN x matrix, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, Optics (physics.optics), Physics - Optics
Abstract: SiN x : Tb 3+-Yb 3+, an efficient down-conversion layer compatible with silicon solar cell process Abstract Tb 3+-Yb 3+ co-doped SiN x down-conversion layers compatible with silicon Photovoltaic Technology were prepared by reactive magnetron co-sputtering. Efficient sensitization of Tb 3+ ions through a SiN x host matrix and cooperative energy transfer between Tb 3+ and Yb 3+ ions were evidenced as driving mechanisms of the down-conversion process. In this paper, the film composition and microstructure are investigated alongside their optical properties, with the aim of maximizing the rare earth ions incorporation and emission efficiency. An optimized layer achieving the highest Yb 3+ emission intensity was obtained by reactive magnetron co-sputtering in a nitride rich atmosphere for 1.2 W/cm${}^2$ and 0.15 W/cm${}^2$ power density applied on the Tb and Yb targets, respectively. It was determined that depositing at 200 {\textdegree}C and annealing at 850 {\textdegree}C leads to comparable Yb 3+ emission intensity than depositing at 500 {\textdegree}C and annealing at 600 {\textdegree}C, which is promising for applications toward silicon solar cells., Solar Energy Materials and Solar Cells, Elsevier, 2015
Published: 2016
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48. High-k MNOS-like stacked dielectrics for non-volatile memory application

Author: Caroline Bonafos, Abdelilah Slaoui, Larysa Khomenkova, Fabrice Gourbilleau, Pascal Normand, Institute of Physics (Kiev), Institute of Physics, National Center for Scientific Research 'Demokritos' ( NCSR ), Centre de recherche sur les Ions, les MAtériaux et la Photonique ( CIMAP - UMR 6252 ), Université de Caen Normandie ( UNICAEN ), Normandie Université ( NU ) -Normandie Université ( NU ) -Ecole Nationale Supérieure d'Ingénieurs de Caen ( ENSICAEN ), Normandie Université ( NU ) -Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Centre National de la Recherche Scientifique ( CNRS ), Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie ( ICube ), Institut National des Sciences Appliquées - Strasbourg ( INSA Strasbourg ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université de Strasbourg ( UNISTRA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg ( ENGEES ) -Réseau nanophotonique et optique, Université de Strasbourg ( UNISTRA ) -Université de Haute-Alsace (UHA) Mulhouse - Colmar ( Université de Haute-Alsace (UHA) ) -Centre National de la Recherche Scientifique ( CNRS ) -Université de Strasbourg ( UNISTRA ) -Université de Haute-Alsace (UHA) Mulhouse - Colmar ( Université de Haute-Alsace (UHA) ) -Centre National de la Recherche Scientifique ( CNRS ) -Matériaux et nanosciences d'Alsace, Université de Strasbourg ( UNISTRA ) -Université de Haute-Alsace (UHA) Mulhouse - Colmar ( Université de Haute-Alsace (UHA) ) -Institut National de la Santé et de la Recherche Médicale ( INSERM ) -Centre National de la Recherche Scientifique ( CNRS ) -Université de Strasbourg ( UNISTRA ) -Institut National de la Santé et de la Recherche Médicale ( INSERM ), Centre d'élaboration de matériaux et d'études structurales ( CEMES ), Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ), Czech Academy of Sciences [Prague] (CAS), National Center for Scientific Research 'Demokritos' (NCSR), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie (ICube), Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institute of Physics [Kiev] (IOP), National Academy of Sciences of Ukraine (NASU), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Université de Strasbourg (UNISTRA)-Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National de Recherche en Informatique et en Automatique (Inria)-Les Hôpitaux Universitaires de Strasbourg (HUS)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Silicon nitride, Materials science, Annealing (metallurgy), Digital storage, Structural and electrical properties, Capacitance, Dielectric, Chemical vapor deposition, rf-Magnetron sputtering, Electrical characterization, Flash memory, law.invention, Plasma CVD, Dielectric materials, Plasma enhanced chemical vapor deposition, law, Deposition conditions, Deposition, High-κ dielectric, Capacitance voltage measurements, [PHYS]Physics [physics], [ PHYS ] Physics [physics], business.industry, Memory effects, Non-volatile memory application, Vapor deposition, Amorphous solid, Non-volatile memory, Capacitor, Data storage equipment, Hafnium oxides, Charge trapping, Optoelectronics, business, Charge trapping memory, Hafnium, Magnetron sputtering, High-k dielectric
Abstract: Charge-trapping memories such as SONOS and MONOS have attracted considerable attention as promising alternatives for next-generation flash memories due to dielectric layer’s scalability, process simplicity, power economy, operation versatility. Nevertheless, the continued miniaturization of the devices forces an application of high-k dielectrics. In this work high-k stacked dielectric structures based on the combination of Hf-based and SiNx materials were fabricated. Their structural and electrical properties versus deposition conditions are studied by means of FTIR-ATR and high-resolution TEM techniques. All samples demonstrated smooth surface (roughness below 1 nm) and abrupt interfaces between the different stacked layers. No crystallization of Hf-based layers was observed after annealing at 800°C for 30 min, demonstrating their amorphous nature and phase stability upon annealing. Electrical characterization was carried out for all samples through capacitance-voltage (C-V) measurements of MIS capacitors. Uniform C-V characteristics were measured along the samples for all stacks. Besides, significant flat-band hysteresis due to charging of the stacks caused by carrier injection from the substrate was observed for the structures with pure HfO2 layers.
Published: 2016
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49. Optical, structural and electrical characterizations of stacked Hf-based and silicon nitride dielectrics

Author: Abdelillah Slaoui, Caroline Bonafos, Pascal Normand, Fabrice Gourbilleau, Larysa Khomenkova, V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (NASU), Institute of Nanoscience and Nanotechnology (INN), National Center for Scientific Research 'Demokritos' (NCSR), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie (ICube), Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), ANR-07-NANO-0022,NOMAD,naNOcristaux dans des Matrices à forte constAnte Diélectrique(2007), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Université de Strasbourg (UNISTRA)-Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National de Recherche en Informatique et en Automatique (Inria)-Les Hôpitaux Universitaires de Strasbourg (HUS)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Lashkaryov Institute of Semiconductor Physics, INN/NCSR Demokritos, Centre de recherche sur les Ions, les MAtériaux et la Photonique ( CIMAP - UMR 6252 ), Université de Caen Normandie ( UNICAEN ), Normandie Université ( NU ) -Normandie Université ( NU ) -Ecole Nationale Supérieure d'Ingénieurs de Caen ( ENSICAEN ), Normandie Université ( NU ) -Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Centre National de la Recherche Scientifique ( CNRS ), Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie ( ICube ), Institut National des Sciences Appliquées - Strasbourg ( INSA Strasbourg ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université de Strasbourg ( UNISTRA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg ( ENGEES ) -Réseau nanophotonique et optique, Université de Strasbourg ( UNISTRA ) -Université de Haute-Alsace (UHA) Mulhouse - Colmar ( Université de Haute-Alsace (UHA) ) -Centre National de la Recherche Scientifique ( CNRS ) -Université de Strasbourg ( UNISTRA ) -Université de Haute-Alsace (UHA) Mulhouse - Colmar ( Université de Haute-Alsace (UHA) ) -Centre National de la Recherche Scientifique ( CNRS ) -Matériaux et nanosciences d'Alsace, Université de Strasbourg ( UNISTRA ) -Université de Haute-Alsace (UHA) Mulhouse - Colmar ( Université de Haute-Alsace (UHA) ) -Institut National de la Santé et de la Recherche Médicale ( INSERM ) -Centre National de la Recherche Scientifique ( CNRS ) -Université de Strasbourg ( UNISTRA ) -Institut National de la Santé et de la Recherche Médicale ( INSERM ), Centre d'élaboration de matériaux et d'études structurales ( CEMES ), Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ), and ANR-07-NANO-0022,NANO,naNOcristaux dans des Matrices à forte constAnte Diélectrique ( 2007 )
Subjects: RF magnetron sputtering, Materials science, Annealing (metallurgy), [ SPI.MAT ] Engineering Sciences [physics]/Materials, 02 engineering and technology, Dielectric, Chemical vapor deposition, Memory effect, 01 natural sciences, 7. Clean energy, [SPI.MAT]Engineering Sciences [physics]/Materials, chemistry.chemical_compound, Plasma-enhanced chemical vapor deposition, 0103 physical sciences, Materials Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, High-k dielectrics, 010302 applied physics, business.industry, Metals and Alloys, Surfaces and Interfaces, Sputter deposition, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Amorphous solid, Ion implantation, Silicon nitride, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, business
Abstract: International audience; High-k stacked dielectric structures were fabricated by a combination of RF magnetron sputtering and plasma-enhanced chemical vapor deposition. Their structural properties were studied versus deposition and annealing conditions by means of attenuated total reflection and high-resolution transmission electron microscopy techniques. All samples demonstrated smoothed surface (with a roughness below 1 nm) and abrupt interfaces between the different stacked layers. No crystallization of Hf-based layers was observed after annealing at 800 °C for 30 min, demonstrating their amorphous nature and phase stability upon annealing. Uniform capacitance–voltage characteristics were measured along the wafers for all stacks. Besides, after round-voltage sweep they demonstrate significant flat-band voltage hysteresis due to charging of the stack caused by carrier injection from the substrate. These phenomena were found to be more pronounced for the stacks with pure HfO2 layers. The stacked structures were implemented for the formation of Ge nanocrystals by means of ion implantation followed by the thermal treatment mentioned above. It was found that the spatial distribution of Ge crystallites in stacked dielectrics affects significantly their electrical properties including the trapping of charge.
Published: 2016
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50. Fabrication and photoluminescence properties of Tb‐doped nitrogen‐rich silicon nitride films

Author: Fabrice Gourbilleau, Magali Morales, P. Marie, Christophe Labbé, Yong-Tao An, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: nitrogen-rich silicon nitride, Materials science, Photoluminescence, Analytical chemistry, chemistry.chemical_element, Terbium, 02 engineering and technology, 010402 general chemistry, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, chemistry.chemical_compound, Tb-doped, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Thin film, Fourier transform infrared spectroscopy, Spectroscopy, magnetron sputtering, Doping, Sputter deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, silicon nitride, Silicon nitride, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, photoluminescence, Tb 3+, 0210 nano-technology
Abstract: International audience; Terbium (Tb) doped nitrogen‐rich silicon nitride thin films were prepared on [100] Si substrate by reactive magnetron co‐sputtering in pure nitrogen atmosphere. The microstructure and optical properties of the films were investigated by means of ellipsometric spectroscopy (ES), atomic force microscopy (AFM), X‐ray diffraction (XRD), Raman scattering and Fourier transform infrared (FTIR) spectroscopies as well as by photoluminescence (PL) experiments. A notable emission from Tb3+ ions was obtained for the as‐deposited layer, while the maximum intensity was found from 600 °C‐annealed sample. Deducing from PL excitation (PLE) analysis, a mechanism of excitation of Tb3+ ions was proposed: the band tail states of matrix play a minor role in the energy transfer process, while the host carriers across the optical gap acted as effective sensitizers for Tb3+ ions
Published: 2012
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