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We investigate the MX2 (M = {Hf, Zr}, X = {S, Se}) transition metal dichalcogenides patterned into armchair (AC) and zigzag (ZZ) nanoribbons (NRs) as potential channel materials in future logic field-effect devices. Ab initio quantum transport simulations are employed to assess the electronic, transport, and ballistic field-effect transistor (FET) properties of devices with such quasi-one-dimensional channels. We report a non-monotonic scaling behavior of MX2NR properties due to strong quantum confinement effects, which is reflected in a strong dependence of the ON-state current (ION) of MX2NR FETs on the nanoribbon configuration. The ∼2 nm-wide HfSe2 and ZrSe2 AC-PFETs have the highest ION of up to 2.6 mA/μm at 10 nA/μm OFF-state current. Surprisingly, MX2NR ZZ-NFETs exhibit a current increase of up to 70% when channel width is scaled down, with ION reaching 2.2 mA/μm in ∼2 nm-wide devices. The high ON-state performance is a direct consequence of high carrier injection velocity, which is explained by analyzing the band structure, transmission, and density of states. We demonstrate that nanostructured MX2 materials can be promising candidates for future logic transistors based on multi-nanowire architectures. [ABSTRACT FROM AUTHOR]

Programmable and non-volatile spin-based logic devices have attracted significant interest for use in logic circuits. Realization of logic operations via spin–orbit torque (SOT) driven magnetization switching could be a crucial step in the direction of building logic-in-memory architectures. In this work, we demonstrate experimentally, the realization of four logic operations in a heavy metal/ferrimagnet bilayer structure via SOT switching. We also propose a general scheme for choosing input parameters to achieve programmable logic operations. The bulk and tunable perpendicular magnetic anisotropy and relatively lower saturation magnetization in ferrimagnets are found to make them more energy efficient in performing logic operations, as compared to conventional ferromagnets. Thus, ferrimagnets are promising candidates for use in logic-in-memory architectures, leading to the realization of user-friendly spin logic devices in the future. [ABSTRACT FROM AUTHOR]

The conventional approach to exploring suitable dielectrics for future logic and memory devices relies on first-principle calculations, which are expensive and time-consuming. In this work, we adopt a data-driven machine learning (ML)-based approach to build a model for predicting these properties. By incorporating structural information into the input descriptors, we achieve record-high accuracy in predicting the dielectric constant, with the coefficients of determination (R2) of 0.886 and root mean square error (RMSE) of 0.083. Additionally, we achieve high predictions for the bandgap, with accuracies of 0.832 and 0.533 for R2 and RMSE, respectively. The features corresponding to specific properties are analyzed to obtain physical insights. Finally, we employ first-principle calculations to validate the feasibility of this model. This work proposes a highly efficient approach for using ML to predict material properties. [ABSTRACT FROM AUTHOR]

How we live our lives depends on how we relate to our past, present and future. The article focusses on the relation to our future. The target of my critique is a "planning conception" that imagines the future as a realm that we can rationally plan and form in light of our ends. In the first section I present an outline of the planning conception, building on Bratman's planning theory and Rawls' idea of a life plan. The second section highlights the attractions of the planning conception. I argue that this conception offers a prima facie intriguing view of the temporality of human life. It promises a life in which we can control the passage of time. The third section reveals severe limitations of the planning conception. I question the claim that plans are central to our self-understanding and to a good life. The planning conception tends to distort the temporality of human life with respect to past, present and future. Given this diagnosis, I sketch an alternative in the last section of the paper. I explore the temporal specifics of ways of understanding oneself as a person and argue that both the formation and the very form of these 'ways of being' do not follow the logic of planning. [ABSTRACT FROM AUTHOR]

In this article, I suggest that our current relation to the sociopolitical future is one where we are blocked from changing our view of what that future is or could be. In this sense, we are trapped in a time loop wherein the challenges before us are continuously met with social and political solutions designed for futures past, old futures. These past possible futures are ones that failed to solve the problems they were offered to address. As such, there is no growth, change, or redemption that could activate a new future; there is only the rehearsal of the old ones: failed futures from the past. What's more, this process of defuturing also relies on a winnowing of the past such that only those pasts that align with our present are allowed to be brought forward. I argue that, to reactivate our future, we also need to reactivate our pasts. I am thinking of those pasts that we do not seek or do not want but that nevertheless come to us. These are the multiple and competing pasts that swirl with present and future as in a vortex, denying any one past the privilege of guiding, directing, or foreclosing the future. It is only by facing this vortex and reopening the past that we can re‐open the future and escape the time loop of our ever‐receding horizon. [ABSTRACT FROM AUTHOR]

The energy‐efficient spin‐orbit torque (SOT) based devices are essential for future memory and logic technologies. To realize a deterministic switching, an external in‐plane magnetic field is usually needed to break the symmetry, which becomes an obstacle for device applications. Here, a field‐free switching in a perpendicularly magnetized yttrium iron garnet covered with an oblique deposited Pt with nitrogen incorporation is demonstrated. The spin‐orbit torque efficiency is enhanced with the increasing incorporation ratio of nitrogen in Pt. The maximum effective spin Hall angle of Pt(N) can reach 0.113, which is almost two times larger than that of pure Pt in Pt/YIG. Meanwhile, the switching current density is reduced with the incorporation of nitrogen. These findings open a route toward high‐efficiency SOT driven spintronic devices based on magnetic insulators. [ABSTRACT FROM AUTHOR]

In this article, I suggest that our current relation to the sociopolitical future is one where we are blocked from changing our view of what that future is or could be. In this sense, we are trapped in a time loop wherein the challenges before us are continuously met with social and political solutions designed for futures past, old futures. These past possible futures are ones that failed to solve the problems they were offered to address. As such, there is no growth, change, or redemption that could activate a new future; there is only the rehearsal of the old ones: failed futures from the past. What's more, this process of defuturing also relies on a winnowing of the past such that only those pasts that align with our present are allowed to be brought forward. I argue that, to reactivate our future, we also need to reactivate our pasts. I am thinking of those pasts that we do not seek or do not want but that nevertheless come to us. These are the multiple and competing pasts that swirl with present and future as in a vortex, denying any one past the privilege of guiding, directing, or foreclosing the future. It is only by facing this vortex and reopening the past that we can re‐open the future and escape the time loop of our ever‐receding horizon. [ABSTRACT FROM AUTHOR]

Intensive research has been carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance field effect transistors for integrated circuits1. Fabricating transistors with ohmic contacts is a challenging task due to the formation of a high Schottky barrier that severely limits the performance of the transistors for real-world applications. Graphene-based heterostructures can be used in addition to, or as a substitute for unsuitable metals. In this paper, we present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene achieving a low contact resistances of about 9 kΩ·µm and high on/off current ratios of 108. Furthermore, we also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a substantial performance enhancement by means of layer optimizations that would make transistors promising for use in future logic integrated circuits. [ABSTRACT FROM AUTHOR]

In this article, a 0.7 nm thick monolayer MoS2 nanosheet gate-all-around field effect transistors (NS-GAAFETs) with conformal high- κ metal gate deposition are demonstrated. The device with 40 nm channel length exhibits a high on-state current density of ~410 μ A μ m−1 with a large on/off ratio of 6 × 108 at drain voltage = 1 V. The extracted contact resistance is 0.48 ± 0.1 kΩ μ m in monolayer MoS2 NS-GAAFETs, thereby showing the channel-dominated performance with the channel length scaling from 80 to 40 nm. The successful demonstration of device performance in this work verifies the integration potential of transition metal dichalcogenides for future logic transistor applications. [ABSTRACT FROM AUTHOR]

A magnetic skyrmion is a promising candidate for information carrier in future logic functional devices, ultra-density storage devices, and neuromorphic computing. The presence of interfacial Dzyaloshinskii–Moriya interaction in magnetron sputtered multilayers results in the spontaneous nucleation of magnetic skyrmion. However, the precise control of position and arrangement of magnetic skyrmion spontaneously nucleated in multilayers is still a significant challenge. Artificial skyrmion, generated by various external stimuli, shows high promise for manipulating the spatially ordered arrangement on demand. In this review, we summarize the progress of artificial skyrmion with various formation mechanisms. After introducing the concept of artificial skyrmion, we will focus on several methods of producing artificial skyrmion in magnetic multilayers using spin texture imprinting, integrated bias magnet, local magnetic field gradient, optical irradiation, and nanolithography. In the end, we give a perspective of the potential applications of artificial skyrmions for cavity magnonics and quantum spintronics. [ABSTRACT FROM AUTHOR]

Instead of the current method of transmitting voltage or current signals in electronic circuit operation, light offers an alternative to conventional logic, allowing for the implementation of new logic concepts through interaction with light. This manuscript examines the use of light in implementing new logic concepts as an alternative to traditional logic circuits and as a future technology. This article provides an overview of how to implement logic operations using light rather than voltage or current signals using optoelectronic materials such as 2D materials, metal–oxides, carbon structures, polymers, small molecules, and perovskites. This review covers the various technologies and applications of using light to dope devices, implement logic gates, control logic circuits, and generate light as an output signal. Recent research on logic and the use of light to implement new functions is summarized. This review also highlights the potential of optoelectronic logic for future technological advancements. [ABSTRACT FROM AUTHOR]

In a complicated situation, the Internet of Things simplifies the process of connecting a wide range of things. Because of its openness and lack of human control, the Internet of Things is open to assaults like denial of service (DoS) and man-in-the-middle attacks. Furthermore, any device that can connect to the internet may be hacked. These attacks put the network connections and the actual equipment at danger. IoT security and privacy will so be compromised. Due to its limited power, bandwidth, and storage, the Internet of Things requires a security solution that does not overload it. This study aims to preserve consumers' trust in the Internet of Things (IoT) by safeguarding their data against unauthorised access and maintaining the privacy of their personal information. With the ultimate objective of presenting a unique hybrid and optimised lightweight logical security architecture to ensure data privacy and integrity while making effective use of available resources, all research are carried out with this purpose in mind. The Hybrid Lightweight Security Framework (HLSF), which this study suggests, offers secrecy and integrity in addition to authentication. The structure consists of three distinct steps. The first step is registration, the second is authentication, and the third is transit security, which protects data while it is being transported. Compared to other current frameworks, the results reveal that HLSF performs better in terms of precision, recall, and accuracy when applied to an IoT situation. [ABSTRACT FROM AUTHOR]

This article seeks to ethnographically highlight the multiple uses of gene/alogy (as explored by Franklin and McKinnon in the 2000s) in the context of the Bangladesh war of 1971, and hence maps out the range of violence and ambivalences at the heart of kinship. It aims to do so by exploring the process through which disrupted kinship futures are seen as a cornerstone for discourses of war and sovereign practices to justify sexual violence during wars. The formation of Bangladesh in 1971 coincided with the rape of 200,000 (contested and official numbers) Bengali women perpetrated by the Pakistani army and its local collaborators. The article explores the occupation of the womb, that is, the connotation of genetic or ethnic fixing through sexual violence by the Pakistani army, which is apparently an attempt to disrupt the kinship futures of East Pakistan (that later became independent Bangladesh). The sovereign logic of disrupting kinship futures of those that one feels the need to attack, weaken and annihilate (in this case East Pakistanis) is, however, based on a process of naturalisation of inequalities drawn from historical and racialised accounts. The article argues that the sovereign belief in being able to genetically and behaviourally 'fix' East Pakistanis through wartime sexual violence, and to instil fear, is possible through the sovereign inhabitation of the inhumanity of sexual violence. Therein lies the vulnerability of sovereign power, the paradox of kinship and its processes of inclusions and ruptures in the future. In seeking to develop a wider theoretical contribution about kinship as the cornerstone of statecraft and wars, the article also seeks to show how military rape alters the grounds of the nation itself, the experiences and imaginations over a period of half a century, and instils various forms of ambiguities about the history of wartime sexual violence. [ABSTRACT FROM AUTHOR]

Gate-all-around (GAA) structures are important for future logic devices and 3D-DRAM. Inner-spacer cavity etching and channel release both require selective etching of Si0.7Ge0.3. Increasing the number of channel-stacking layers is an effective way to improve device current-driving capability and storage density. Previous work investigated ICP selective etching of a three-cycle Si0.7Ge0.3/Si multilayer structure and the related etching effects. This study focuses on the dry etching of a 15-cycle Si0.7Ge0.3/Si multilayer structure and the associated etching effects, using simulation and experimentation. The simulation predicts the random effect of lateral etching depth and the asymmetric effect of silicon nanosheet damage on the edge, both of which are verified by experiments. Furthermore, the study experimentally investigates the influence and mechanism of pressure, power, and other parameters on the etching results. Research on these etching effects and mechanisms will provide important points of reference for the dry selective etching of Si0.7Ge0.3 in GAA structures. [ABSTRACT FROM AUTHOR]

This study presents a new way of increasing 3SAT logic programming's efficiency in the Hopfield network. A new model of merging fuzzy logic with 3SAT in the Hopfield network is presented called HNN-3SATFuzzy. The hybridised dynamic model can avoid locally minimal solutions and lessen the computing burden by utilising fuzzification and defuzzification techniques in fuzzy logic. In addressing the 3SAT issue, the proposed hybrid approach can select neuron states between zero and one. Aside from that, unsatisfied neuron clauses will be changed using the alpha-cut method as a defuzzifier step until the correct neuron state is determined. The defuzzification process is a mapping stage that converts a fuzzy value into a crisp output. The corrected neuron state using alpha-cut in the defuzzification stage is either sharpening up to one or sharpening down to zero. A simulated data collection was utilised to evaluate the hybrid techniques' performance. In the training phase, the network for HNN-3SATFuzzy was weighed using RMSE, SSE, MAE and MAPE metrics. The energy analysis also considers the ratio of global minima and processing period to assess its robustness. The findings are significant because this model considerably impacts Hopfield networks' capacity to handle 3SAT problems with less complexity and speed. The new information and ideas will aid in developing innovative ways to gather knowledge for future research in logic programming. Furthermore, the breakthrough in dynamic learning is considered a significant step forward in neuro-symbolic integration. [ABSTRACT FROM AUTHOR]

Managing the continuous and fast-growing volume of information, the progress in the Internet-of-Things, and the evolution from digitalization to networking are huge technological chores. Si-based integrated chips face increasing demands as they strive to meet these challenges. However, there is growing recognition that information processing and computing based on molecules performing logic operations may play a decisive role in shaping the future of the computer industry. Molecular logic gates are molecular counterparts of electronic devices that, instead of exclusively by electrical signals, can be stimulated by diverse chemical or physical input signals that produce optical outputs according to a well-defined logical transfer function. Several materials have been applied for molecular logic, however, the Ln3+-based ones appear to be a commendable choice, as they can respond to both chemical and physical stimuli, presenting unique photophysical properties that make them quite popular for photonics applications. Here we critically review illustrative molecular logic systems based on Ln3+ ions and discuss their potential for integration in future molecular photonic–electronic hybrid logic computing systems. [ABSTRACT FROM AUTHOR]

Spin current, converted from charge current via spin Hall or Rashba effects, can transfer its angular momentum to local moments in a ferromagnetic layer. In this regard, the high charge‐to‐spin conversion efficiency is required for magnetization manipulation for developing future memory or logic devices including magnetic random‐access memory. Here, the bulk Rashba‐type charge‐to‐spin conversion is demonstrated in an artificial superlattice without centrosymmetry. The charge‐to‐spin conversion in [Pt/Co/W] superlattice with sub‐nm scale thickness shows strong W thickness dependence. When the W thickness becomes 0.6 nm, the observed field‐like torque efficiency is about 0.6, which is an order larger than other metallic heterostructures. First‐principles calculation suggests that such large field‐like torque arises from bulk‐type Rashba effect due to the vertically broken inversion symmetry inherent from W layers. The result implies that the spin splitting in a band of such an ABC‐type artificial SL can be an additional degree of freedom for the large charge‐to‐spin conversion. [ABSTRACT FROM AUTHOR]

Recreational mathematics is having something of a moment just now. III As David Singmaster notes, recreational mathematics is generally understood to refer not just to problems that are fun - most mathematicians enjoy even their deepest research problems, after all - but also to problems that are easy to understand and have some pedagogical value. Two especially prominent defenders of the pedagogical value of recreational mathematics were Lewis Carroll and Raymond Smullyan. Singmaster's books can be enjoyed either as writings to dip into when you have some free time or as books that reward careful study by anyone interested in the history of recreational mathematics. [Extracted from the article]

It is also interesting to see how Todd's view on future contingents evolved from the disjunctive Russellian view of future contingents in Todd ([2]) to the present one in terms of available futures and future-directed facts. The absence of a privileged future among the multitude of possible futures brings Todd to what is the main focus of the book, viz. the claim that future contingents are invariably all false. However, one might respond that even if we grant Todd that all available futures are on a par, and thus there is I currently i no such thing as the actual future, we I will i nonetheless end up in one of those futures. Patrick Todd's latest book, I The Open Future: Why Future Contingents are all False i , offers a response to the problem of the open future. [Extracted from the article]

Temporal justification logic is a new family of temporal logics of knowledge in which the knowledge of agents is modelled using a justification logic. In this paper, we present various temporal justification logics involving both past and future time modalities. We combine Artemov's logic of proofs with linear temporal logic with past, and we also investigate several principles describing the interaction of justification and time. We present two kinds of semantics for our temporal justification logics, one based on interpreted systems and Fitting models and the other based on Mkrtychev models, and further, we establish soundness and completeness. We show that the internalization property holds in some of the temporal justification logics. We further investigate the two well-known epistemic-temporal notions of no forgetting and no learning in the framework of justification logics. Finally, we present temporal justification logics that avoid the logical omniscience problem. [ABSTRACT FROM AUTHOR]

The five important features of Chinese-style modernization have profound sports implications. Being an important part of the socialist modernization process, the new and high-quality development of Chinese sport is not only the internal requirement for the comprehensive construction of socialist modernization, but the embodiment of Chinese-style modernization in the field of sport, and the strong foundation and support for promoting and expanding Chinese modernization. Chinese-style modernization offers a basic context for the development of Chinese sport as well as the logic of its future prospect. Therefore, based on the Chinese-style modernization in the new era, sport should become the basic means to promote the all-round development of people due to the characteristics of sport in itself, such as strengthening the body, challenging and surpassing the self. Sport should become an important means to shape the society through the awareness of rules, teamwork and fighting spirit carried by sport. Sport should play as an engine for economic development and become a new driving force for economic and social development and a new way for balanced regional development. And the essence of competitive sports' function of "winning glory for the country" should be explored thus to make Chinese spirit of sport become a unique symbol of Chinese modernization construction. [ABSTRACT FROM AUTHOR]

Taking into account the novel layered structure and unusual electronic properties of MoS2 and WS2 on the side the lack of dangling bonds between these two components and donorâ€"acceptor linkage effects, growth of the MoS2/WS2 vertical heterojunction film on the amorphous SiO2/Si substrate have created high demand. In this study, we reported the continuous, scalable, and vertical MoS2/WS2 heterostructure film by using a sputtering without a transfer step. The WS2 film was continuously grown on MoS2 and eventually led to the formation of the MoS2/WS2 vertical heterojunction film. Dozens of FETs fabricated on MoS2/WS2 continuous heterojunction film were created on the same substrate in a single lithographic fabrication step, allowing them to be commercialized and not only used in research applications. RAMAN spectra proved the formation of the MoS2/WS2 heterostructure film. In XPS measurements, it was shown that a separate MoS2 and WS2 layer was grown instead of the alloy structure. The polarity behavior of the MoS2/WS2 heterostructure FET was found to be modulated with different drain voltages as p-type to ambipolar and finally n-type conductivity because of the transition of band structure and Schottky barrier heights at different drain voltages. Electron mobility (7.2 cm2 V.sâˆ'1) and on/off ratio (104â€"105) exhibited by the MoS2/WS2 heterostructure FETs displayed a more improved electrical performance than that of individual WS2, MoS2 devices. It was observed that the mobility value of MoS2/WS2 FET was approximately 514 times greater than WS2 FET and 800 times greater than MoS2 FET. Additionally, the MoS2/WS2 FET on/off ratio was larger than 2 order MoS2 FET and 1 order WS2 FET. The film of continuous vertical heterojunctions as in the MoS2/WS2 currents in the study would be a promising candidate for nanoelectronics fields. This work demonstrated the progress towards realizing carrier-type controlled high-performance MoS2/WS2 heterojunction-based FETs for future logic devices. [ABSTRACT FROM AUTHOR]

Studies suggest that when a language requires grammatical marking of future events, speakers prefer immediate payoffs and engage in less future-oriented behavior. If future costs of tax avoidance are non-trivial, we posit that strong future time reference (FTR) in languages would lower managers' perceptions about costs, encouraging more tax avoidance. Using a large sample of 56,243 firm-year observations across 31 countries, we find that tax avoidance is higher where FTR in the language is strong. We also find that tax avoidance is more prevalent in Swiss regions with strong FTR and in US firms whose CEOs were born in countries with strong FTR. Collectively, our evidence suggests that costs of tax avoidance can be non-trivial, and that linguistically driven time perception helps explain the cross-country variation in tax avoidance. [ABSTRACT FROM AUTHOR]

The intriguing properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs) enable the exploration of new electronic device architectures, particularly the emerging memristive devices for in-memory computing applications. Implementation of arithmetic logic operations taking advantage of the non-linear characteristics of memristor can significantly improve the energy efficiency and simplify the complexity of peripheral circuits. Herein, we demonstrate an arithmetic logic unit function using a lateral volatile memristor based on layered 2D tungsten disulfide (WS2) materials and some combinational logic circuits. Removable oxygen ions were introduced into WS2 materials through oxygen plasma treatment process. The resistive switching of the memristive device caused by the thermophoresis-assisted oxygen ions migration has also been revealed. Based on the characteristics of excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and spike rate dependent plasticity (SRDP), a real-time numerical system convertor was successfully accomplished, which is a significant computing function of arithmetic logic unit. This work paves a new way for developing 2D memristive devices for future arithmetic logic applications. [ABSTRACT FROM AUTHOR]

Topological magnetic textures, characterized by integer topological charge S, are potential candidates in future magnetic logic and memory devices, due to their smaller size and expected low threshold current density for their motion. An essential requirement to stabilize them is the Dzyaloshinskiiâ€"Moriya interaction (DMI) which promotes a particular chirality, leading to a unique value of S in a given material. However, recently coexistence of skyrmions and antiskyrmions, with opposite topological charge, in frustrated ferromagnets has been predicted using J 1â€" J 2â€" J 3 classical Heisenberg model, which opens new perspectives, to use the topological charge as an additional degree of freedom. In this work, we propose another approach of using a synthetic antiferromagnetic system, where one of the ferromagnetic (FM) layer has isotropic and the other FM layer has anisotropic DMI to promote the existence of skyrmions and antiskyrmions, respectively. A frustrated interaction arises due to the coupling between the magnetic textures in the FM layers, which enables the stabilization and coexistence of 6 novel elliptical topological textures. [ABSTRACT FROM AUTHOR]

In this essay I analyse the Yamuna riverfront development plan, India's second‐most ambitious riverfront plan after Sabarmati. It constructs a future vision for the Yamuna and aims to integrate it with the city's economy and popular culture. I explore the logic and mechanisms of this futurity with a specific focus on bureaucratic practices and negotiations between the relevant actors. I argue that the logic of the construction of future scenarios lies in the practices of here and now, which are often overshadowed by the grand promises of the spatial plan. I show how un/doing of the future takes place when this plan of the riverfront is revisited repeatedly within different institutional and communication frameworks. [ABSTRACT FROM AUTHOR]

Bi‐directional photodetection with positive and negative photoconductance (PPC/NPC) plays a critical role in building next‐generation artificial neuromorphic systems, visual information processing and optoelectronic logic gates of the future. However, the typical device configuration based on heterostructures with strict working principles restricts the diversity of material selection. In this work, a novel strategy is proposed to fabricate bi‐directional photoresponse devices based on PtSe2−x films with precisely controllable selenization engineering. It is found that the PtSe2−x films are composed of Pt and PtSe2 components. The direction of the photocurrent can be reversibly modulated in a broadband range by tuning the ratio of PtSe2 in the film, which is ascribed to the synergistic mechanism of bolometric effect of Pt and photoconductive effect of PtSe2. The polarity switching wavelength from NPC to PPC can be further modulated through tuning the components of the film for specific demand. The tunable bi‐directional photoresponse enables the device to mimic the fundamental functions of artificial synapses all optically, such as aversion learning capability and logical functions, with high paired pulse facilitation index. This work potentially opens an opportunity for the development of advanced artificial neuromorphic systems and optoelectronic logic gates. [ABSTRACT FROM AUTHOR]

Si-based cold source field-effect transistor (CSFET) combines the benefits of sub-60-mV/dec steep-slope switching, high ${I}_{ \mathrm{\scriptscriptstyle ON}}$ current, and compatibility with current Si CMOS process technology. Therefore, it is a promising candidate for future energy-efficient logic technology. For the first time, we present device and circuit benchmark of Si-based gate-all-around (GAA) CSFET versus conventional GAA MOSFET. The device’s characteristics are first generated using a calibrated multiscale TCAD framework. Then a novel SPICE device compact model based on neural network is created to capture the unique CSFET ${I}-{V}$ and ${C}-{V}$ data with high precision. This SPICE model further enables the circuit benchmark simulations. Through this approach, it is identified that compared with GAA MOSFET, Si-based GAA CSFET shows up to 67% performance/power gain for a supply voltage (${V}_{\text {dd}}$) below 0.43 V in an ideal gate-loaded ring oscillator circuit. It is 70% more energy-efficient in the capacitive-loaded fan-out of 4 (FO4) inverter circuit. Finally, the comparisons of GAA CSFETs with different nanosheet widths are accomplished for design technology cooptimization (DTCO) purpose. [ABSTRACT FROM AUTHOR]

In this letter, we report the realization of sub-10-nm diameter vertical nanowire (VNW) p-type tunnel FETs (TFETs). Using a broken-band GaSb/InAsSb heterostructure design and a top-down fabrication approach, we demonstrate a 9-nm diameter VNW TFET with excellent on-state characteristics featuring a peak transconductance of 90 $\mu \text{S}/\mu \text{m}$ at $V_{{\text {ds}}} = -0.3$ V. The same device exhibits a minimum linear subthreshold swing of 225 mV/dec at $V_{\text {ds}} = -0.05$ V. Our p-type GaSb/InAsSb TFETs exhibit clear negative differential resistance at room temperature, with a peak-to-valley current ratio over 3. The excellent device performance of these devices bodes well for the viability of GaSb-based complementary TFETs in future ultra-scaled logic technologies. [ABSTRACT FROM AUTHOR]

Nucleic acid-based programmable devices connect the fields of computation and biology. The synthesis, stability, and molecular hybridization are paramount data storage capabilities of DNA. This potential could lead to the development of biological devices. The integration of environment-sensitive logic circuits could resemble the systematic molecular evolution within living systems. The living cells inherently respond to environmental stimuli, with proteins playing a central role by acting as extracellular entity receptors. Although semiconductors have led unparalleled advances in logic devices, they exhibit limitations when assessing living cell parameters. Novel approaches are emerging to counter these limitations, such as using chemical molecules as micro-environment sensing computational agents. The intersection of biology and computation is marked by rapid molecular evolution. A plethora of devices, ranging from sensors and diagnostic tools to therapeutic agents, is now available, each hinting at the vast possibilities in smart biotechnology. This review offers an extensive summary of the most recent progress in biomolecular logic devices, intending to give researchers an insight into the current state of the field as well as mapping out directions for future logic device research. The emphasis on the promise and potential of nanomaterials interface with DNA, nucleic acid and protein to shape the future of computational logic devices underscores the importance of ongoing exploration and innovation in the field of bio-computing systems. [Display omitted] • Synthesis of biomolecular computational circuits. • Biomolecular logic devices are exceptionally sensitive to cellular and environmental phenomena. • DNA logic devices offer a low-cost and highly customizable medium for the development of complex circuits. • Toehold-mediated strand displacement, split G-quadruplex, and other strategies facilitates designing of DNA devices. [ABSTRACT FROM AUTHOR]

Vertical-type two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field effect transistors (MOSFETs), featuring vertical geometry and typically p-channel, are poised for application in future logic technology, high-voltage and high-power miniaturization complementary circuits. P-channel achieving high breakdown voltage and low on-resistance can be realized through the use of p− drift layer, while a trench structure is shown to be beneficial for increasing the drain current density of vertical-type devices. However, the cumulative impact of these key parameters on the performance of vertical-type diamond MOSFETs remains unclear. In this paper, we explore the physical mechanism that how the key parameters design affects on off-state, breakdown and output characteristics has been simulated using Silvaco TCAD tools. We propose a vertical-type trench-gate 2DHG diamond MOSFET that is favorable for general integration applications and exhibits equivalent performance to the double-gate vertical structure without relying on a high concentration of nitrogen doped layer. This demonstrates that our work offers a universal approach for optimizing the comprehensive device performance in vertical-type structures, accounting for the effects of multiple parameters across all wide bandgap material-based FETs. [Display omitted] • Vertical-type diamond MOSFET with double-gate and trench-gate models were simulated. • Key parameters (i.e. N-doped layer, drift layer, trench width, depth) were simulated. • N-implanted layer acts as leakage current blocking layer, ensuring reliable turn-off. • The drift layer contributes to a more uniform distribution of the electric field. • Trench-gate devices exhibited high performance with low nitrogen doping concentration. [ABSTRACT FROM AUTHOR]

The miniaturization of the silicon chips is reaching its physical limits, and the transistors are so small that current leakage will become an insurmountable problem. Additionally, the actual chip shortage makes clear the excessive world dependence on silicon, stressing the need for silicon‐free computing strategies. Quantum computing process information by manipulating photons, and computation performed by individual molecules are being proposed as alternatives, with potential benefits in terms of miniaturization, performance enhancement, and energy efficiency. Molecular logics can play a decisive role in the future of the computer industry, and the unique photonic characteristics of trivalent lanthanide ions make them suitable candidates to integrate future molecular logic applications. In this work, a Eu3+/Tb3+ co‐doped organic–inorganic hybrid is presented as an illustrative all‐photonic logic platform constructed through the decay dynamics of both lanthanide and hybrid host emissions. Besides combinatory AND, NAND, and INH logic gates, this system presents on‐choice Eu3+, Tb3+, or host emission enabling the development of reprogrammable and reconfigurable photonic molecular logic gates. All‐photonic temperature‐reprogrammable changes from AND to INH logic gates and a reconfiguration among INH and AND1 or AND2 gates, based on the excitation wavelength are demonstrated, showing a clear step forward toward mirroring electronic logic counterparts. [ABSTRACT FROM AUTHOR]

Education has been and will be conflictive. Since the memorable times of Professor Socrates, it has become what it is now: an antagonistic struggle fraught with difficulties, because there has been no approach to the meaning of being. If it has failed in the last three centuries, it is for not knowing that the Other has its own way of operating in the practices of thought and for subjecting students to oppression. The qualitative model allows us, through a documentary analysis, to build a bibliographic database to explore its meanings. These documentary data are configured as a cogito that thinks and manifests itself in real life. Traditional thinking considers that the one who teaches is right and the other lacks knowledge. So education is about filling knowledge of all human history, without the Other thinking on his own. It is believed that this action will help the subject to live life in this complicated world. Education, then, is a hopeless case. The contribution is to generate one's own knowledge of the Other based on the essence of Being. Education without this possibility is a dilemma with no way out, with a catastrophic immensity in times of pandemic, where virtuality, the digital, corners even more the cognizing entity submitted to a terrifying habitat. The pandemic became an opportunity to transform the school in post-pandemic towards a New Enlightenment, which consists in the possibility of thinking on one's own. [ABSTRACT FROM AUTHOR]

In the form of a conversational exchange of ideas, Ewa Domańska, Zoltán Boldizsár Simon and Marek Tamm reflect on the condition and role of historical knowledge in the Anthropocene. In the conversation on the potential of 'anthropocenic historical knowledge' – including the limitations and use of the term – each author offers and elaborates on one main theme for discussion, on which the other two co-authors reflect: Tamm begins by posing the question of the extension of 'the territory of the historian', Simon takes on the challenge by calling for the development of a 'scientific literacy', and Domańska pulls the threads together by advocating 'anticipatory knowledge'. In the conversation, each author reflects on all three themes that they present as fundamental tenets of a renewed historical knowledge attuned to the Anthropocene predicament. [ABSTRACT FROM AUTHOR]

In Margaret Oliphant's Hester , the protagonist repeatedly confronts obstacles to her vision of the future. From her desire to open a cours , to her hope of managing the bank, her prospects diminish in the small, claustrophobic town of Redborough. Oliphant specifically directs irony at the gendered concepts of "desire" and "choice," as Hester's freedom of choice is repeatedly undercut or frustrated. But Oliphant structurally evokes these same questions about development through her use of formal patterns, patterns that are centrally traced throughout the novel and positioned as complicating forces to linear trajectories. These same patterns critique the conventional pursuit of narrative progress by suggesting that formulaic ideas of development both limit fictional possibilities and become complicit in the social structures that restrict gendered progression. Oliphant's decisive emphasis on recursive actions and structures ultimately gestures toward the underlying societal norms that construct them. [ABSTRACT FROM AUTHOR]

This article proposes a functional historicist explanation to explicate the core ideas and underlying logic embedded in the futures literacy concept. Futures literacy assumes a capacity to reflect on the past, sense and make sense of the present and use this reflective body of knowledge when anticipating the future. Arguably, futures literacy must be learned, sustained, and regained; it requires a continuous, anticipative, and recursive loop. Recursivity, where an effect in an initial period acts as a cause in the next period, retroacts between the future and present, regaining anticipation. Anticipation has causal effects in the way it structures our images of the future and the avenue we follow when striving to achieve this image. Such a causal structure implies both feedforward and feedback control and is contained in the logic of functional explanations used in sociology. [ABSTRACT FROM AUTHOR]

Luminescent metal–organic frameworks (LMOFs) as chemosensors, can sense various analytes, such as heavy metal ions, antibiotics, pesticides, and small biological molecules. Based on the fluorescence characteristics of LMOFs, a variety of logic gates have been developed. In this review, we mainly discuss some common logic systems based on LMOFs, and then summarize the strategies of constructing logic gates from two perspectives. One is based on superior characteristics of MOFs, which can be synthesized from Ln3+ based MOFs (Ln-MOFs) or form hybrids by encapsulating different materials, including metal ions, dyes, and quantum dots (QDs). The other is to control the presence of inputs by reactions between different reactants and then further control switches of logic gates. Additionally, the common sensing mechanisms of LMOFs in logic gates are discussed. In the end, we have envisioned MOFs that possess a promising future in logic computing areas. [ABSTRACT FROM AUTHOR]

This paper investigates how the teaching and learning about "wicked" environmental problems may be fostered through an educational approach premised on futuring – the active imagination of the future. The growing academic interest in possible and desirable futures provides a promising starting point for restructuring education as coupling knowledge to imagination and teaching to policy practice can open up new, experiential ways of learning. Empirically, this paper draws upon research on an experimental futuring course employing a "mixed classroom" formula in which students and policy-makers learn together about sustainability challenges. Drawing on the notion of inquiry, this course is set up with the aim to foster a critical engagement with the ways futures are imagined in political debates and decision-making. Through complementary activities, the students were pushed to imagine possible futures around a central theme, the transition to a circular economy, in interaction with the policy-makers and other practitioners. This culminated in a "Museum of the Future". From our action-research-based investigation of the learning experiences in the course, we conclude that a futuring approach to teaching wicked problems results in a more active attitude of students towards the space in which wicked problems and solutions are collectively imagined and deliberated. [ABSTRACT FROM AUTHOR]

Directional specific control on the generation and propagation of magnons is essential for designing future magnon-based logic and memory devices for low power computing. The epitaxy of the ferromagnetic thin film is expected to facilitate anisotropic linewidths, which depend on the crystal cut and the orientation of the thin film. Here, we have shown the growth-induced magneto-crystalline anisotropy in 40 nm epitaxial yttrium iron garnet (YIG) thin films, which facilitate cubic and uniaxial in-plane anisotropy in the resonance field and linewidth using ferromagnetic resonance measurements. The growth-induced cubic and non-cubic anisotropy in epitaxial YIG thin films are explained using the short-range ordering of the Fe3+ cation pairs in octahedral and tetrahedral sublattices with respect to the crystal growth directions. This site-preferred directional anisotropy enables an anisotropic magnon–magnon interaction and opens an avenue to precisely control the propagation of magnonic current for spin-transfer logics using YIG-based magnonic technology. [ABSTRACT FROM AUTHOR]

The p-n homojunction devices based on 2-D-layered materials (2DLMs) with unusual physical characteristics are gaining extensive research on their use in photodetectors. However, the current fabrication of p-n homojunction devices based on 2DLMs needs a complex doping method. In our work, the laser-irradiation method is a simple and straightforward selective p-type doping technique for the 2-D semiconductor molybdenum ditelluride (MoTe2). The laser-oxidized product MoOx is responsible for p-type doping in MoTe2. The laser-irradiation technique has been used to directly write an in-plane MoTe2 p-n homojunction device, where the laser-scanned region is p-doped and the neighboring region is electrically n-doped by applying a positive back-gate voltage. The MoTe2 p-n homojunction device has been used as a photodetector, which shows a high photoswitching ratio of 105 under the illumination of 633 nm at $6.5~\mu \text{W}$ and a short photoresponse time of $232~\mu \text{s}$. The selective p-doped technique using a laser-irradiation method can be used in future logic circuits based on 2-D materials. [ABSTRACT FROM AUTHOR]

Combining Boolean logic and nonvolatile memory functions, memristor‐based stateful logic circuits can minimize data movement during the computing process to achieve futuristic in‐memory computing. This may solve the problem of the von Neumann bottleneck in the current computing architecture. Herein, the recent developments in memristor‐based stateful logic computation are discussed from several perspectives, including the device, circuit, operational principles, and applications. Stateful logic gates correspond to in‐memory logic gates, with the inputs and outputs having identical physical entities, such as resistance. The developments in stateful logic primitive gates reported in the past decade are summarized. The influential factors in their actual implementation for stateful logic computation are also discussed. Then, methods for allocating the logic gates into the crossbar array are explained, which are for implementing the complex computing instances in the crossbar array. Finally, several data‐intensive applications achieved using the in‐memory computing method are discussed for the practical application of stateful logic in future computing systems. [ABSTRACT FROM AUTHOR]

We delineate three dimensions of resource allocation behavior that allow us to distinguish between real options logic and alternative resource allocation regimes: sequencing, low initial commitment, and reallocation. We then measure these in a product innovation context to test for the performance effect of real options logic vis-à-vis its alternatives. Sequencing, which distinguishes dynamic allocation regimes more generally, is associated with higher new product sales. Low initial commitment and reallocation do not show individual direct effects on new product sales. However, when assessed as a match, we find that the fit between low initial commitment and reallocation (yes-yes; no-no) increases performance significantly. After controlling for such fit as well as sequencing, we find no significant performance difference between real options logic and other regimes. Our findings imply that insufficient identification of real options logic picks up confounding effects, which may provide an explanation for the inconclusive results in prior studies of real options and performance. In addition to bounding the concept more precisely, we contribute to theory by situating real options logic within the broader set of allocation regimes conducive to innovation performance in uncertain, competitive markets. [ABSTRACT FROM AUTHOR]

In this work, we comprehensively investigate the performance of CMOS inverters based on 2-D materials (2DMs), such as MoS2, WSe2, WS2, black phosphorus (BP), WSe2-MoS2, and benchmark against their silicon (Si) counterpart for sub-10-nm channel length. The performance evaluation of the 2DM-based CMOS inverters is done using an in-house developed multiscale modeling approach, which translates the atomistic device model into the professional circuit simulation using the Verilog-AMS interface. Among 2DM-based inverters, heterogeneous WSe2-MoS2 inverter configuration exhibits excellent switching characteristics for 5.6 nm and beyond channel length with a larger static noise margin, nanowatt-order power dissipation, and comparative speed to Si-based inverter. Despite lower noise margins and higher power dissipation, Si-based inverter, with lower gate capacitance, allows marginally higher speed than that of 2DM-based inverters. Furthermore, at 3-nm channel length, static and dynamic performance metrics of inverter degrade significantly due to more pronounced short-channel effects; however, MoS2-based inverter demonstrates a good functionality. The performance analysis and benchmarking show promise and opportunities with 2DM-based devices for future logic applications; however, optimizing the contact resistance, parasitic capacitances, and channel length are the key device design parameters in developing the high-performance CMOS inverter. [ABSTRACT FROM AUTHOR]

Logic locking is a prominent technique to protect the integrity of hardware designs throughout the integrated circuit design and fabrication flow. However, in recent years, the security of locking schemes has been thoroughly challenged by the introduction of various deobfuscation attacks. As in most research branches, deep learning is being introduced in the domain of logic locking as well. Therefore, in this article we present SnapShot, a novel attack on logic locking that is the first of its kind to utilize artificial neural networks to directly predict a key bit value from a locked synthesized gate-level netlist without using a golden reference. Hereby, the attack uses a simpler yet more flexible learning model compared to existing work. Two different approaches are evaluated. The first approach is based on a simple feedforward fully connected neural network. The second approach utilizes genetic algorithms to evolve more complex convolutional neural network architectures specialized for the given task. The attack flow offers a generic and customizable framework for attacking locking schemes using machine learning techniques. We perform an extensive evaluation of Snap- Shot for two realistic attack scenarios, comprising both reference combinational and sequential benchmark circuits as well as silicon-proven RISC-V core modules. The evaluation results show that SnapShot achieves an average key prediction accuracy of 82.60% for the selected attack scenario, with a significant performance increase of 10.49 percentage points compared to the state of the art. Moreover, SnapShot outperforms the existing technique on all evaluated benchmarks. The results indicate that the security foundation of common logic locking schemes is built on questionable assumptions. Based on the lessons learned, we discuss the vulnerabilities and potentials of logic locking uncovered by SnapShot. The conclusions offer insights into the challenges of designing future logic locking schemes that are resilient to machine learning attacks. [ABSTRACT FROM AUTHOR]