Search

Using the normal incidence x-ray standing wave technique as well as low energy electron microscopy we have investigated the structure of quasi-freestanding monolayer graphene (QFMLG) obtained by intercalation of antimony under the $\left(6\sqrt{3}\times6\sqrt{3}\right)R30^\circ$ reconstructed graphitized 6H-SiC(0001) surface, also known as zeroth-layer graphene. We found that Sb intercalation decouples the QFMLG well from the substrate. The distance from the QFMLG to the Sb layer almost equals the expected van der Waals bonding distance of C and Sb. The Sb intercalation layer itself is mono-atomic, flat, and located much closer to the substrate, at almost the distance of a covalent Sb-Si bond length. All data is consistent with Sb located on top of the uppermost Si atoms of the SiC bulk.

Metalation and self‐metalation reactions of porphyrins on oxide surfaces have recently gained interest. The mechanism of porphyrin self‐metalation on oxides is, however, far from being understood. Herein, we show by a combination of results obtained with scanning tunneling microscopy, photoemission spectroscopy, and DFT computations, that the self‐metalation of 2H‐tetraphenylporphyrin on the surface of ultrathin MgO(001) films is promoted by charge transfer. By tuning the work function of the MgO(001)/Ag(001) substrate, we are able to control the charge and the metalation state of the porphyrin molecules on the surface., The self‐metalation of 2H‐tetraphenylporphyrin on the surface of MgO is believed to be feasible only at defect sites. It is shown that this reaction is promoted by charge transfer and does not necessarily require the presence of defects. Using ultrathin MgO films as substrate and tuning its work function allows the charge and metalation state of the adsorbed molecules to be controlled.

The journal of physical chemistry / C 126(15), 6880-6891 (2022). doi:10.1021/acs.jpcc.2c01514, Published by American Chemical Society, Washington, DC

Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their two-dimensional interior and one-dimensional spin-polarized edge states in which current flows ballistically. In scanning tunneling microscopy (STM), the edge states manifest themselves as a localized density of states. However, there is a significant research gap between the observation of edge states in nanoscale spectroscopy, and the detection of ballistic transport in edge channels which typically relies on transport experiments with microscale lithographic contacts. Here, we study few-layer films of the three-dimensional topological insulator (Bi$_{x}$Sb$_{1-x})_2$Te$_3$, for which a topological transition to a two-dimensional topological QSH insulator phase has been proposed. Indeed, an edge state in the local density of states is observed within the band gap. Yet, in nanoscale transport experiments with a four-tip STM, 2 and 3 quintuple layer films do not exhibit a ballistic conductance in the edge channels. This demonstrates that the detection of edge states in spectroscopy can be misleading with regard to the identification of a QSH phase. In contrast, nanoscale multi-tip transport experiments are a robust method for effectively pinpointing ballistic edge channels, as opposed to trivial edge states, in quantum materials.

Science advances 8(29), eabn0819 (2022). doi:10.1126/sciadv.abn0819, Published by American Association for the Advancement of Science, Washington, DC [u.a.]

Multi-tip scanning tunneling microscopy (STM) is a powerful method to perform charge transport measurements at the nanoscale. With four STM tips positioned on the surface of a sample, four-point resistance measurements can be performed in dedicated geometric configurations. Here, we present an alternative to the most often used scanning electron microscope imaging to infer the corresponding tip positions. After the initial coarse positioning is monitored by an optical microscope, STM scanning itself is used to determine the inter-tip distances. A large STM overview scan serves as a reference map. Recognition of the same topographic features in the reference map and in small scale images with the individual tips allows us to identify the tip positions with an accuracy of about 20 nm for a typical tip spacing of ∼1μm. In order to correct for effects such as the non-linearity of the deflection, creep, and hysteresis of the piezoelectric elements of the STM, a careful calibration has to be performed.

In the field of van der Waals heterostructures, the twist angle between stacked two-dimensional (2D) layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxial graphene that forms in a surfactant atmosphere [F. C. Bocquet, et al., Phys. Rev. Lett. 125, 106102 (2020)]. The resulting G-R0$^\circ$ layer is aligned with the SiC lattice, and hence represents an important milestone towards high quality twisted bilayer graphene (tBLG), a frequently investigated model system in this field. Here, we focus on the surface structures obtained in the same surfactant atmosphere, but at lower preparation temperatures at which a boron nitride template layer forms on SiC(0001). In a comprehensive study based on complementary experimental and theoretical techniques, we find -- in contrast to the literature -- that this template layer is a hexagonal B$_x$N$_y$ layer, but not high-quality hBN. It is aligned with the SiC lattice and gradually replaced by low-quality graphene in the 0$^\circ$ orientation of the B$_x$N$_y$ template layer upon annealing.

The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. Bi$_2$Te$_3$. Here, we report the formation of a Te buffer layer on Si(111)$-$(7$\times$7) by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer (ML) of Te on the Si(111)$-$(7$\times$7) surface at room temperature results in an amorphous Te layer, increasing the substrate temperature to $770\rm\,K$ results in a weak (7$\times$7) electron diffraction pattern. Scanning tunneling microscopy of this surface shows remaining corner holes from the Si(111)$-$(7$\times$7) surface reconstruction and clusters in the faulted and unfaulted halves of the (7$\times$7) unit cells. Increasing the substrate temperature further to $920\rm\,K$ leads to a Te/Si(111)$-(2\sqrt3\times2\sqrt{3})\rm R30^{\circ}$ surface reconstruction. We find that this surface configuration has an atomically flat structure with threefold symmetry.

In article number 2100083, Arthur Leis, Bert Voigtländer and co-workers demonstrate nanoscale four-probe measurements on atomically thin topological insulator films. For this purpose, four individual scanning tunneling microscope tips are directly contacting individual terraces on the sample surface to quantify the thickness-dependent film conductivity. This enables the authors to detect a breakdown of spin-momentum locking in the topological surface state as a function of the film thickness. In the few-layer limit, this effect can realize helical edge modes along step edges with potential applications in spintronics and quantum computing.

Computer physics communications 263, 107905 (2021). doi:10.1016/j.cpc.2021.107905, Published by North Holland Publ. Co., Amsterdam

ACS nano 14(11), 15766-15775 (2020). doi:10.1021/acsnano.0c06798, Published by American Chemical Society, Washington, DC

Elucidating electrostatic surface potentials contributes to a deeper understanding of the nature of matter and its physicochemical properties, which is the basis for a wide field of applications. Scanning quantum dot microscopy, a recently developed technique allows to measure such potentials with atomic resolution. For an efficient deployment in scientific practice, however, it is essential to speed up the scanning process. To this end we employ a two-degree-of-freedom control paradigm, in which a Gaussian process is used as the feedforward part. We present a tailored online learning scheme of the Gaussian process, adapted to scanning quantum dot microscopy, that includes hyperparameter optimization during operation to enable fast and precise scanning of arbitrary surface structures. For the potential application in practice, the accompanying computational cost is reduced evaluating different sparse approximation approaches. The fully independent training conditional approximation, used on a reduced set of active training data, is found to be the most promising approach., Comment: This paper is currently under review for CDC 2020

Scanning probe microscopy makes it possible to image and spectroscopically characterize nanoscale objects, and to manipulate1-3 and excite4-8 them; even time-resolved experiments are now routinely achieved9,10. This combination of capabilities has enabled proof-of-principle demonstrations of nanoscale devices, including logic operations based on molecular cascades 11 , a single-atom transistor 12 , a single-atom magnetic memory cell 13 and a kilobyte atomic memory 14 . However, a key challenge is fabricating device structures that can overcome their attraction to the underlying surface and thus protrude from the two-dimensional flatlands of the surface. Here we demonstrate the fabrication of such a structure: we use the tip of a scanning probe microscope to lift a large planar aromatic molecule (3,4,9,10-perylenetetracarboxylic-dianhydride) into an upright, standing geometry on a pedestal of two metal (silver) adatoms. This atypical and surprisingly stable upright orientation of the single molecule, which under all known circumstances adsorbs flat on metals15,16, enables the system to function as a coherent single-electron field emitter. We anticipate that other metastable adsorbate configurations might also be accessible, thereby opening up the third dimension for the design of functional nanostructures on surfaces.

Molecular monolayer films containing two different types of molecules (so-called heteromolecular films) are promising candidates for the controlled functionalization of metal–organic hybrid interfaces. This is particularly true for blends formed by charge donor and acceptor molecules. Here we study heteromolecular monolayer systems containing 3,4,9,10-perylene-tetra-carboxylic-dianhydride (PTCDA) as charge acceptor, and either copper(II) or tin(II) phthalocyanine (CuPc or SnPc) as charge donor, adsorbed on Ag(111). We find that both systems exhibit structural phases with identical lateral ordering (isostructural phases), which is an important prerequisite for studying the role of the central metal atom without competing effects caused by different lateral structures. Using normal incidence X-ray standing waves and photoemission tomography we find distinct differences in the (vertical) geometric and electronic structure for the heteromolecular systems under study: While the vertical structure of CuPc is es...

The normal incidence X-ray standing waves technique is one of the most well-established methods for investigating the geometric structure at interfaces and surfaces. It is able to measure vertical positions and distances of individual atomic species with very high precision (typically ab initio calculations. Non-dipolar effects are well known to strongly affect the result, in particular when light elements are involved. A correction mechanism for these effects is established, but in its commonly-used form it is based on one essential restriction, namely the assumption of perfect normal incidence of the X-rays with respect to the relevant lattice planes of the crystal. Here, we show that small deviations from normal incidence, as they are unavoidable in typical experimental setups, lead to significant systematic errors in the NIXSW results. The magnitude of this effect depends on the specific conditions in a non-linear way and may reach up to 5%, corresponding to several tenths of an Angstrom in the adsorption height. We present a straightforward way of accounting for this effect, and demonstrate that recording the photoelectron yield in an angular-resolved mode is indispensable, since the correction parameters strongly depend on the electron take-off angle.

We report a method to achieve physical and electronic decoupling of organic molecules from a metal surface. Oxygen adsorbed on the Cu(100) surface immobilizes the surface electrons in the Cu-O covalent bonds. This results in electronic surface hardening and prevents charge transfer from the metal into perylene-tetracarboxylic dianhydride molecules subsequently deposited on this surface.

We present an extension of the tunneling theory for scanning tunneling microcopy (STM) to include different types of vibrational-electronic couplings responsible for inelastic contributions to the tunnel current in the strong-coupling limit. It allows for a better understanding of more complex scanning tunneling spectra of molecules on a metallic substrate in separating elastic and inelastic contributions. The starting point is the exact solution of the spectral functions for the electronic active local orbitals in the absence of the STM tip. This includes electron-phonon coupling in the coupled system comprising the molecule and the substrate to arbitrary order including the anti-adiabatic strong coupling regime as well as the Kondo effect on a free electron spin of the molecule. The tunneling current is derived in second order of the tunneling matrix element which is expanded in powers of the relevant vibrational displacements. We use the results of an ab-initio calculation for the single-particle electronic properties as an adapted material-specific input for a numerical renormalization group approach for accurately determining the electronic properties of a NTCDA molecule on Ag(111) as a challenging sample system for our theory. Our analysis shows that the mismatch between the ab-initio many-body calculation of the tunnel current in the absence of any electron-phonon coupling to the experiment scanning tunneling spectra can be resolved by including two mechanisms: (i) a strong unconventional Holstein term on the local substrate orbital leads to reduction of the Kondo temperature and (ii) a different electron-vibrational coupling to the tunneling matrix element is responsible for inelastic steps in the $dI/dV$ curve at finite frequencies., 34 pages, 26 figure

The electronic and geometric structures of tetracene films on Ag(110) and Cu(110) have been studied with photoemission tomography and compared to that of pentacene. Despite similar energy level alignment of the two oligoacenes on these surfaces revealed by conventional ultraviolet photoelectron spectroscopy, the momentum-space resolved photoemission tomography reveals a significant difference in both structural and electronic properties of tetracene and pentacene films. Particularly, the saturated monolayer of tetracene on Ag(110) is found to consist of two molecular species that, despite having the same orientation, are electronically very different-while one molecule remains neutral, another is charged because of electron donation from the substrate.

Thin films of topological insulators (TI) usually exhibit multiple parallel conduction channels for the transport of electrical current. Beside the topologically protected surface states (TSS), parallel channels may exist, namely the interior of the not-ideally insulating TI film, the interface layer to the substrate, and the substrate itself. To be able to take advantage of the auspicious transport properties of the TSS, the influence of the parasitic parallel channels on the total current transport has to be minimized. Because the conductivity of the interior (bulk) of the thin TI film is difficult to access by measurements, we propose here an approach for calculating the mobile charge carrier concentration in the TI film. To this end, we calculate the near-surface band bending using parameters obtained experimentally from surface-sensitive measurements, namely (gate-dependent) four-point resistance measurements and angle-resolved photoelectron spectroscopy (ARPES). While in most cases another parameter in the calculations, i.e. the concentration of unintentional dopants inside the thin TI film, is unknown, it turns out that in the thin-film limit the band bending is largely independent of the dopant concentration in the film. Thus, a well-founded estimate of the total mobile charge carrier concentration and the conductivity of the interior of the thin TI film proves possible. Since the interface and substrate conductivities can be measured by a four-probe conductance measurement prior to the deposition of the TI film, the total contribution of all parasitic channels, and therefore also the contribution of the vitally important TSS, can be determined reliably., 18 pages, 10 color figures

The adsorption geometry, the electronic properties, and the adsorption energy of the prototype organic molecule 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) on a monolayer of hexagonal boron nitride (hBN) grown on the Cu(111) surface were determined experimentally. The perylene core is at a large height of 3.37 $\AA{}$ and only a minute downward displacement of the functional anhydride groups (0.07 \AA{}) occurs, yielding adsorption heights that agree with the sum of the involved van der Waals radii. Thus, already a single hBN layer leads to a decoupled (physisorbed) molecule, contrary to the situation on the bare Cu(111) surface.

Photoemission tomography (PT) is a newly developed method for analyzing angular resolved photoemission data. In combination with momentum microscopy it allows for a comprehensive investigation of the electronic structure of (in particular) metal-organic interfaces as they occur in organic electronic devices. The most interesting aspect in this context is the band alignment, the control of which is indispensable for designing devices. Since PT is based on characteristic photoemission patterns that are used as fingerprints, the method works well as long as these patterns are uniquely representing the specific molecular orbital they are originating from. But this limiting factor is often not fulfilled for systems exhibiting many differently oriented molecules, as they may occur on highly symmetric substrate surfaces. Here we show that this limitation can be lifted by recording the photoemission data in a momentum microscope and limiting the probed surface area to only a few micrometers squared, since this corresponds to a typical domain size for many systems. We demonstrate this by recording data from a single domain of the archetypal adsorbate system 1,4,5,8-naphthalenetetracarboxylic dianhydride on Cu(0 0 1). This proof of principle experiment paves the way for establishing the photoemission [Formula: see text]-tomography method as an ideal tool for investigating the electronic structure of metal-organic interfaces with so far unraveled clarity and unambiguity.

Electrostatic forces are among the most common interactions in nature and omnipresent at the nanoscale. Scanning probe methods represent a formidable approach to study these interactions locally. The lateral resolution of such images is, however, often limited as they are based on measuring the force (gradient) due to the entire tip interacting with the entire surface. Recently, we developed scanning quantum dot microscopy (SQDM), a new technique for the imaging and quantification of surface potentials which is based on the gating of a nanometer-size tip-attached quantum dot by the local surface potential and the detection of charge state changes via non-contact atomic force microscopy. Here, we present a rigorous formalism in the framework of which SQDM can be understood and interpreted quantitatively. In particular, we present a general theory of SQDM based on the classical boundary value problem of electrostatics, which is applicable to the full range of sample properties (conductive versus insulating, nanostructured versus homogeneously covered). We elaborate the general theory into a formalism suited for the quantitative analysis of images of nanostructured but predominantly flat and conductive samples.

Die winkelaufgeloste Photoelektronen-Spektroskopie, Photoelektronen-Tomographie genannt, erlaubt die Rekonstruktion von Molekulorbitalen in drei Dimensionen. Dazu werden auf einer Metalloberflache angeordnete Molekule mit extremem ultravioletten Licht bestrahlt und die Winkel- und Energieverteilung der uber den photoelektrischen Effekt herausgelosten Elektronen gemessen. Die Ergebnisse sind ein weiterer Beleg fur das Konzept der Molekulorbitale, denen der Orbitaltheoretiker Kenichi Fukui 1977 eine “irgendwie unwirkliche Natur” zuschrieb. Anders als zum Beispiel Rastersonden-Methoden funktioniert die Photoelektronen-Tomographie auch bei Zimmertemperatur. Sie kann zudem Orbitale organischer Molekule auf reaktiven Substraten abbilden. In Zukunft konnte sie auch 3D-Bilder von dynamischen Veranderungen in Orbitalen, zum Beispiel wahrend chemischen Reaktionen, liefern.

The electrical properties of SrTiO3(100) single crystals were investigated in-situ at different stages of thermal reduction by means of a 4-tip STM. Using the tips of the STM as electrical probes, distance-dependent four-point measurements were performed at the surface of the crystal at room temperature after reduction by thermal treatment. For annealing temperatures T ≤ 700 °C, charge transport is confined to a surface region

Original article: Review of Scientific Instruments 88 (2), 023703 (2017)In our publication entitled “Low vibration laboratory with a single-stage vibration isolation for microscopy applications”1 we have erroneously labeled the measured spectrum Nspec of the vibrations as the spectral density NPSD ≡ Nvof the vibrations in our laboratory . Due to this, the measured vibration levels (spectral densities) shown in Figs. 3 and 5–7 have to be multiplied by a factor of 5.9. The corrected figures are shown in Figs. 1–5. Note that the magenta curve in Fig. 3 of Ref. 1 is not shifted because it was measured with a bandwidth of 1 Hz.

Determination of the molecular Kondo temperature $T_K$ poses a challenge in most cases when the experimental temperature cannot be tuned to a sufficient extent. We show how this ambiguity can be resolved if additional control parameters are present, such as magnetic field and mechanical gating. We record the evolution of the differential conductance by lifting an individual molecule from the metal surface with the tip of a scanning tunneling microscope. By fitting the measured conductance spectra with the single impurity Anderson model we are able to demonstrate that the lifting tunes the junction continuously from the strongly correlated Kondo-singlet to the free spin $1/2$ ground state. In the crossover regime, where $T_K$ is similar to the temperature of experiment, the fitting yields ambiguous estimates of $T_K$ varying by an order of magnitude. We show that analysis of the conductance measured in two distinct external magnetic fields can be used to resolve this problem., Comment: Main text: 10 pages, 6 figures; Supplementary Information: 11 pages, 5 figures