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Cation stoichiometry has been identified as a major key in establishing 2-dimensional electron gases (2DEGs) in oxide heterostructures. Here, we discuss a 2DEG formation scenario in B-site deficient perovskite/perovskite heterostructures, which previously were predicted to show insulating behavior. We elaborate an ionic picture based on oxygen-vacancy-buffered B-site vacancy defects in the polar oxide layer that yields a continuous transition from 2DEG formation to less conducting interfaces to insulating interfaces with increasing B-site deficiency. Experimentally, a corresponding modulation of charge transfer across NdGaO3/SrTiO3 interfaces is inferred using hard x-ray photoelectron spectroscopy analysis and transport experiments. With increasing B-site deficiency, we observe a decrease of the interfacial Ti3+ core level contribution, indicating a reduced charge transfer at the interface. This result is corroborated by temperature-dependent transport measurements, revealing increased low temperature resistance, with a dominant influence of a reduced electron density in the Ga-depleted sample. We consider a redistribution of oxygen vacancies in the B-site deficient polar oxide layer to explain the alleviated interface reconstruction, adding a new perspective on potential built-up in polar-oxide thin films.

We report on our investigation of the electronic structure of Ti_{2}O_{3} using (hard) x-ray photoelectron and soft x-ray absorption spectroscopy. From the distinct satellite structures in the spectra, we have been able to establish unambiguously that the Ti-Ti c-axis dimer in the corundum crystal structure is electronically present and forms an a_{1g}a_{1g} molecular singlet in the low-temperature insulating phase. Upon heating, we observe a considerable spectral weight transfer to lower energies with orbital reconstruction. The insulator-metal transition may be viewed as a transition from a solid of isolated Ti-Ti molecules into a solid of electronically partially broken dimers, where the Ti ions acquire additional hopping in the a-b plane via the e_{g}^{π} channel, the opening of which requires consideration of the multiplet structure of the on-site Coulomb interaction.

The basic properties of a simple afocal optical system, namely a two-lens Keplerian telescope, are reviewed and compared with measurements that can be easily performed with instrumentation available in a university optical laboratory. The object–image conjugation, along with the Lagrangian invariant of the systems, are made clear by the comparison between theory and experiments, highlighting also the limits of the Gaussian approximation in the chosen experimental realization. [ABSTRACT FROM AUTHOR]

Nowadays, a wide number of applications based on magnetic materials rely on the properties arising at the interface between different layers in complex heterostructures engineered at the nanoscale. In ferromagnetic/heavy metal multilayers, such as the [Co/Pt] N and [Co/Pd] N systems, the magnetic proximity effect was demonstrated to be asymmetric, thus inducing a magnetic moment on the Pt (Pd) layer that is typically higher at the top Co/Pt(Pd) interface. In this work, advanced spectroscopic and imaging techniques were combined with theoretical approaches to clarify the origin of this asymmetry both in Co/Pt trilayers and, for the first time, in multilayer systems that are more relevant for practical applications. The different magnetic moment induced at the Co/Pt interfaces was correlated to the microstructural features that are in turn affected by the growth processes that induce a different intermixing during the film deposition, thus influencing the interface magnetic profile.

A set of electron-correlation energies as large as 10 eV have been measured for a magnetic 2 ML Fe film deposited on Ag(001). By exploiting the spin selectivity in angle-resolved Auger-photoelectron coincidence spectroscopy and the Cini-Sawatzky theory, the core-valence-valence Auger spectrum of a spin-polarized system have been resolved: correlation energies have been determined for each individual combination of the two holes created in the four subbands involved in the decay: majority and minority spin, as well as e_{g} and t_{2g}. The energy difference between final states with parallel and antiparallel spin of the two emitted electrons is ascribed to the spin-flip energy for the final ion state, thus disentangling the contributions of Coulomb and exchange interactions.

Resistive switching oxides are highly attractive candidates to emulate synaptic behaviour in artificial neural networks. Whilst the most widely employed systems exhibit filamentary resistive switching, interface-type switching systems based on a tunable tunnel barrier are of increasing interest, since their gradual SET and RESET processes provide an analogue-type of switching required to take over synaptic functionality. Interface-type switching devices often consist of bilayers of one highly mixed-conductive oxide layer and one highly insulating tunnel oxide layer. However, most tunnel oxides used for interface-type switching are also prone to form conducting filaments above a certain voltage bias threshold. We investigated two different tunnel oxide devices, namely, Pr1-xCaxMnO3 (PCMO) with yttria-stabilized ZrO2 (YSZ) tunnel barrier and substoichiometric TaOx with HfO2 tunnel barrier by interface-sensitive, hard X-ray photoelectron spectroscopy (HAXPES) in order to gain insights into the chemical changes during filamentary and interface-type switching. The measurements suggest an exchange of oxygen ions between the mixed conducting oxide layer and the tunnel barrier, that causes an electrostatic modulation of the effective height of the tunnel barrier, as the underlying switching mechanism for the interface-type switching. Moreover, we observe by in operando HAXPES analysis that this field-driven ionic motion across the whole area is sustained even if a filament is formed in the tunnel barrier and the device is transformed into a filamentary-type switching mode.

By using hard X-ray photoelectron spectroscopy experimentally, proof is provided that resistive switching in Ti/Pr₀.₄₈ Ca₀.₅₂ MnO₃ (PCMO) devices is based on a redox-process that mainly occurs on the Ti-side. The different resistance states are determined by the amount of fully oxidized Ti-ions in the stack, implying a reversible redox-reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier., (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

We have investigated the role of the electroforming process in the establishment of resistive switching behaviour for Pt/Ti/Pr0.5Ca0.5MnO3/SrRuO3 layered heterostructures (Pt/Ti/PCMO/SRO) acting as non-volatile Resistance Random Access Memories (RRAMs). Electron spectroscopy measurements demonstrate that the higher resistance state resulting from electroforming of as-prepared devices is strictly correlated with the oxidation of the top electrode Ti layer through field-induced electromigration of oxygen ions. Conversely, PCMO exhibits oxygen depletion and downward change of the chemical potential for both resistive states. Impedance spectroscopy analysis, supported by the detailed knowledge of these effects, provides an accurate model description of the device resistive behaviour. The main contributions to the change of resistance from the as-prepared (low resistance) to the electroformed (high resistance) states are respectively due to reduced PCMO at the boundary with the Ti electrode and to the formation of an anisotropic n-p junction between the Ti and the PCMO layers.

Angle-resolved photoemission spectroscopy reveals the presence of a two-dimensional electron gas at the surface of In(2)O(3)(111). Quantized subband states arise within a confining potential well associated with surface electron accumulation. Coupled Poisson-Schrödinger calculations suggest that downward band bending for the conduction band must be much bigger than band bending in the valence band. Surface oxygen vacancies acting as doubly ionized shallow donors are shown to provide the free electrons within this accumulation layer. Identification of the origin of electron accumulation in transparent conducting oxides has significant implications in the realization of devices based on these compounds.

Spin selectivity in angle-resolved Auger photoelectron coincidence spectroscopy (AR-APECS) is used to probe electron correlation in ferromagnetic thin films. In particular, exploiting the AR-APECS capability to discriminate Auger electron emission events characterized by valence hole pairs created either in the high or in the low total spin state, a strong correlation effect in the Fe M(2,3)VV Auger line shape (measured in coincidence with the Fe 3p photoelectrons) of Fe/Cu(001) thin films is detected and ascribed to interactions within the majority spin subband. Such an assignment follows from a close comparison of the experimental AR-APECS line shapes with the predictions of a model based on spin polarized density functional theory and the Cini-Sawatzky approach.

The absence of sharp structures in the Auger line shapes of partially filled bands has severely limited the use of electron spectroscopy in magnetic crystals and other correlated materials. By a novel interplay of experimental and theoretical techniques we achieve a combined understanding of the photoelectron, Auger, and Auger-photoelectron coincidence spectra (APECS) of the antiferromagnetic CoO. A recently discovered dichroic effect in angle resolved (DEAR) APECS reveals a complex pattern in the Auger line shape, which is here explained in detail, labeling the final states by their total spin. Since the dichroic effect exists in the antiferromagnetic state but vanishes at the Néel temperature, the DEAR-APECS technique detects the phase transition from its local effects, thus providing a unique tool to observe and understand magnetic correlations where the usual methods are not applicable.

Photoelectron emission spectra in a photon energy range between 7.5 and 21 eV are measured for in situ grown polycrystalline Yb films. By comparing bulk and surface core level shifted 4f components we give an estimation of the effective attenuation length (EAL) for low energy (6-20 eV) electrons in Yb, establishing a moderate increase of the EAL upon electron energy decrease. The experimental EAL data are found to be a factor of four smaller than those predicted from the so-called 'universal curve'.

We have measured hard x-ray photoemission spectra of pure vanadium sesquioxide (V(2)O(3)) across its metal-insulator transition. We show that, in the metallic phase, a clear correlation exists between the shakedown satellites observed in the vanadium 2p and 3p core-level spectra and the coherent peak measured at the Fermi level. Comparing experimental results and dynamical mean-field theory calculations, we estimate the Hubbard energy U in V(2)O(3) (4.20+/-0.05 eV). From our bulk-sensitive photoemission spectra we infer the existence of a critical probing depth for investigating electronic properties in strongly correlated solids.

Characterization and control of the interface structure and morphology at the atomic level is an important issue in understanding the magnetic interaction between an antiferromagnetic material and an adjacent ferromagnet in detail, because the atomic spins in an antiferromagnet change direction on the length scale of nearest atomic distances. Despite its technological importance for the development of advanced magnetic data-storage devices and extensive studies, the details of the magnetic interface coupling between antiferromagnets and ferromagnets have remained concealed. Here we present the results of magneto-optical Kerr-effect measurements and layer-resolved spectro-microscopic magnetic domain imaging of single-crystalline ferromagnet-antiferromagnet- ferromagnet trilayers. Atomic-level control of the interface morphology is achieved by systematically varying the thicknesses of the bottom ferromagnetic and the antiferromagnetic layer. We find that the magnetic coupling across the interface is mediated by step edges of single-atom height, whereas atomically flat areas do not contribute.

The collision statistics of the energy dissipation of Auger and photoelectrons emitted from an amorphized Si(100) surface is studied by measuring the Si 2p photoelectron line as well as the first plasmon loss peak in coincidence with the Si-LVV Auger transition and the associated first plasmon loss. The Si 2p plasmon intensity decreases when measured in coincidence with the Si-LVV peak. If measured in coincidence with the Si-LVV plasmon the decrease is significantly smaller. The results agree quantitatively with calculations accounting for surface, volume, and intrinsic losses as well as elastic scattering in a random medium. In this way one can determine the average emission depth of individual electrons by means of Auger photoelectron coincidence spectroscopy, which therefore constitutes a unique tool to investigate interfaces at the nanoscale level.

We present experimental evidence for a three-dimensional noncollinear antiferromagnetic spin structure in ultrathin single-crystalline fcc Fe50Mn50 layers using magnetic circular dichroism photoelectron emission microscopy and x-ray magnetic linear dichroism. Layer-resolved as-grown domain images of epitaxial trilayers grown on Cu(001) in which FeMn is sandwiched between ferromagnetic layers with different easy axes reveal the presence of antiferromagnetic spin components in the film plane and normal to the film plane. An FeMn spin structure with no collinear order in the film plane is consistent with the absence of x-ray magnetic linear dichroism in Fe L3 absorption in FeMn/Co bilayers.