1. A wideband cryogenic microwave low-noise amplifier
- Author
-
Boris I. Ivanov, Dmitri I. Volkhin, Ilya L. Novikov, Dmitri K. Pitsun, Dmitri O. Moskalev, Ilya A. Rodionov, Evgeni Il’ichev, and Aleksey G. Vostretsov
- Subjects
cryogenic low-noise amplifier ,high-electron-mobility transistor (hemt) ,hemt amplifier ,microwave cryogenic amplifier ,microwave superconducting circuit readout ,superconducting qubit readout ,Technology ,Chemical technology ,TP1-1185 ,Science ,Physics ,QC1-999 - Abstract
A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.
- Published
- 2020
- Full Text
- View/download PDF