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5 results on '"European Project: FIRST STEP"'

1. Engineering a Robust Flat Band in III–V Semiconductor Heterostructures

Author

Xavier Wallart, Daniel Vanmaekelbergh, Gilles Patriarche, David Troadec, Guillaume Fleury, Bruno Grandidier, Christophe Delerue, Nathali Alexandra Franchina Vergel, Maxime Berthe, Ludovic Desplanque, C. Coinon, Yannick Lambert, Tao Xu, François Vaurette, Davide Sciacca, Dmitri A. Yarekha, L. Christiaan Post, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Debye Institute for Nanomaterials Science, Utrecht University [Utrecht], Laboratoire de Chimie des Polymères Organiques (LCPO), Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Team 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies, Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Sino-European School of Technology, University of Shanghai [Shanghai], Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Dutch Research Council (NWO Chemistry - Toppunt 'Superficial superstructures'), Natural Science Foundation of Shanghai (19ZR1419500), Renatech Network, PCMP PCP, ANR-16-CE24-0007,Dirac-III-V,Super-réseau d'antipoints de Dirac pour les électrons dans les semiconducteurs III-V(2016), ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), ANR-17-CE09-0021,GERMANENE,Croissance de germanene sur substrats à bande interdite(2017), European Project: FIRST STEP, Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC), Physique-IEMN (PHYSIQUE-IEMN), and Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN)

Subjects
Materials science, tight binding calculations, quantum well, flat band, Scanning tunneling spectroscopy, band engineering, Bioengineering, 02 engineering and technology, Electron, Lattice constant, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Electronic band structure, Lithography, ComputingMilieux_MISCELLANEOUS, Quantum well, block copolymer lithography, business.industry, Mechanical Engineering, Heterojunction, disorder, General Chemistry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Two-dimensional lattice, Quantum dot, scanning tunneling spectroscopy, Optoelectronics, III−V semiconductor, 0210 nano-technology, business
Abstract

Electron states in semiconductor materials can be modified by quantum confinement. Adding to semiconductor heterostructures the concept of lateral geometry offers the possibility to further tailor the electronic band structure with the creation of unique flat bands. Using block copolymer lithography, we describe the design, fabrication, and characterization of multiorbital bands in a honeycomb In0.53Ga0.47As/InP heterostructure quantum well with a lattice constant of 21 nm. Thanks to an optimized surface quality, scanning tunnelling spectroscopy reveals the existence of a strong resonance localized between the lattice sites, signature of a p-orbital flat band. Together with theoretical computations, the impact of the nanopatterning imperfections on the band structure is examined. We show that the flat band is protected against the lateral and vertical disorder, making this industry-standard system particularly attractive for the study of exotic phases of matter.

Published
2020

2. The Fine-Structure Constant as a Ruler for the Band-Edge Light Absorption Strength of Bulk and Quantum-Confined Semiconductors

Author

Prins, P. Tim, Alimoradi Jazi, Maryam, Killilea, Niall A., Evers, Wiel H., Geiregat, Pieter, Heiss, Wolfgang, Houtepen, Arjan J., Delerue, Christophe, Hens, Zeger, Vanmaekelbergh, Daniel, Condensed Matter and Interfaces, Sub Inorganic Chemistry and Catalysis, Sub Condensed Matter and Interfaces, Debye Institute for Nanomaterials Science, Utrecht University [Utrecht], Friedrich-Alexander Universität Erlangen-Nürnberg (FAU), Delft University of Technology (TU Delft), Universiteit Gent = Ghent University (UGENT), Physique - IEMN (PHYSIQUE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), support by The Netherlands Organization for Scientific Research (NWO, Grant 14614 'Q-Lumicon') and the European Research Council (ERC Advanced Grant 692691 'First step'). Z.H. acknowledges support by FWO-Vlaanderen (research project 17006602) and Ghent University (BOF-GOA 01G01019). D.V.M, W.H., C.D., and Z.H. acknowledge support from the European Commission via the Marie-Skłodowska Curie action Phonsi (H2020-MSCA-ITN-642656)., European Project: FIRST STEP, European Project: 642656,H2020,H2020-MSCA-ITN-2014,Phonsi(2015), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Universiteit Gent = Ghent University [Belgium] (UGENT), Condensed Matter and Interfaces, Sub Inorganic Chemistry and Catalysis, and Sub Condensed Matter and Interfaces

Subjects
Letter, Materials science, Exciton, Superlattice, Bioengineering, 02 engineering and technology, 01 natural sciences, Condensed Matter::Materials Science, 0103 physical sciences, General Materials Science, Quantum coupling, fine-structure constant, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Absorption (electromagnetic radiation), dielectric screening, optical transitions, Condensed matter physics, business.industry, Condensed Matter::Other, Mechanical Engineering, Fine-structure constant, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Chemistry, quantum coupling, Semiconductor, Quantum dot, Absorptance, light absorption, PBSE, 0210 nano-technology, business
Abstract

International audience; Low-dimensional semiconductors have found numerous applications in optoelectronics. However, a quantitative comparison of the absorption strength of lowdimensional versus bulk semiconductors has remained elusive. Here, we report generality in the band-edge light absorptance of semiconductors, independent of their dimensions. First, we provide atomistic tight-binding calculations that show that the absorptance of semiconductor quantum wells equals mπα (m = 1 or 2 with α as the fine-structure constant), in agreement with reported experimental results. Then, we show experimentally that a monolayer (superlattice) of quantum dots has similar absorptance, suggesting an absorptance quantum of mπα per (confined) exciton diameter. Extending this idea to bulk semiconductors, we experimentally demonstrate that an absorptance quantum equal to mπα per exciton Bohr diameter explains their widely varying absorption coefficients. We thus provided compelling evidence that the absorptance quantum πα per exciton diameter rules the band-edge absorption of all direct semiconductors, regardless of their dimension.

Published
2021

3. Electronic properties of atomically coherent square PbSe nanocrystal superlattice resolved by Scanning Tunneling Spectroscopy

Author

Capiod, Pierre, Van Der Sluijs, Maaike, De Boer, Jeroen, Delerue, Christophe, Swart, Ingmar, Vanmaekelbergh, Daniel, Sub Condensed Matter and Interfaces, Condensed Matter and Interfaces, Debye Institute for Nanomaterials Science, Utrecht University [Utrecht], Physique - IEMN (PHYSIQUE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), European Project: FIRST STEP, Sub Condensed Matter and Interfaces, Condensed Matter and Interfaces, and Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Materials science, Band gap, Superlattice, Scanning tunneling spectroscopy, Bioengineering, 02 engineering and technology, semiconductors, 010402 general chemistry, 01 natural sciences, materials, law.invention, chemistry.chemical_compound, Condensed Matter::Materials Science, law, Taverne, General Materials Science, Electrical and Electronic Engineering, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Spectroscopy, Electronic band structure, Lead selenide, 2D, Scanning Tunneling Spectroscopy, Local density of states, Condensed matter physics, Mechanical Engineering, 2D, materials, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 0104 chemical sciences, chemistry, Mechanics of Materials, nanocrystal superlattices, scanning tunneling microscopy, Scanning tunneling microscope, 0210 nano-technology
Abstract

International audience; Rock-salt lead selenide nanocrystals can be used as building blocks for large scale square superlattices via two-dimensional assembly of nanocrystals at a liquid-air interface followed by oriented attachment. Here we report Scanning Tunneling Spectroscopy (STS) measurements of the local density of states of an atomically coherent superlattice with square geometry made from PbSe nanocrystals. Controlled annealing of the sample permits the imaging of a clean structure and to reproducibly probe the band gap and the valence hole and conduction electron states. The measured band gap and peak positions are compared to the results of optical spectroscopy and atomistic tight-binding calculations of the square superlattice band Electronic properties of atomically coherent square PbSe nanocrystal superlattice resolved by Scanning Tunne structure. In spite of the crystalline connections between nanocrystals that induce significant electronic couplings, the electronic structure of the superlattices remains very strongly influenced by the effects of disorder and variability.

Published
2021

4. Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells

Author

Tao Xu, Yannick Lambert, Bruno Grandidier, C. Coinon, N. A. Franchina Vergel, Christophe Delerue, Guillaume Fleury, C. Post, Xavier Wallart, Daniel Vanmaekelbergh, Dmitri A. Yarekha, T.S. Kulmala, François Vaurette, Ludovic Desplanque, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Physique - IEMN (PHYSIQUE - IEMN), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), This work was supported by the French National Research Agency (ANR-16-CE24-0007-01 Dirac III-V), the RENATECH network, the H2020 program (ERC Advanced Grant 692691-'FIRST STEP'), the Dutch Research Council (NWO Chemistry - Toppunt 'Superficial superstructures') and the Natural Science Foundation of Shanghai (19ZR1419500)., Renatech Network, PCMP PCP, ANR-16-CE24-0007,Dirac-III-V,Super-réseau d'antipoints de Dirac pour les électrons dans les semiconducteurs III-V(2016), European Project: FIRST STEP, Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Materials science, Lithography, III-V semiconductors, InGaAs, Scattering, Condensed Matter::Materials Science, [SPI]Engineering Sciences [physics], Lattice constant, honeycomb, Lattice (order), Honeycomb, Physics::Atomic Physics, Quantum well, In0.53Ga0.47As, business.industry, Nanoperforation, Conical surface, Lattices, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Semiconductor, Quantum wells, Optoelectronics, two-dimensional lattices, business, Thermal scanning probe lithography
Abstract

International audience; Building two-dimensional lattices in semiconductor quantum-wells offers the prospect to design distinct energy-momentum dispersions, including conical intersections and nondispersive bands. Here, we compare three lithographic patterning methods, e-beam lithography, block copolymer lithography and thermal scanning probe lithography to produce a honeycomb lattice in an In0.53Ga0.47As quantum well. We weigh up the pros and cons of each method to reach lattice constants smaller than 20 nm with a minimum of dispersion in the pore size.

Published
2021

5. p Orbital Flat Band and Dirac Cone in the Electronic Honeycomb Lattice Article

Author

Gardenier, Thomas, van den Broeke, Jette, Moes, Jesper, Swart, Ingmar, Delerue, Christophe, Slot, Marlou, Smith, C, Vanmaekelbergh, Daniel, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique-IEMN (PHYSIQUE-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Utrecht University [Utrecht], Physique - IEMN (PHYSIQUE - IEMN), Financial support from the Foundation for Fundamental Research on Matter (FOM, grants 16PR3245 and DDC13), which is part of The Netherlands Organization for Scientific Research (NWO), as well as the European Research Council (Horizon 2020 'FIRSTSTEP', 692691), and European Project: FIRST STEP

Subjects
Condensed Matter::Quantum Gases, [PHYS]Physics [physics], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
Abstract

International audience; Theory anticipates that the in-plane p x , p y orbitals in a honeycomb lattice lead to potentially useful quantum electronic phases. So far, p orbital bands were only realized for cold atoms in optical lattices and for light and exciton-polaritons in photonic crystals. For electrons, in-plane p orbital physics is difficult to access since natural electronic honeycomb lattices, such as graphene and silicene, show strong s−p hybridization. Here, we report on electronic honeycomb lattices prepared on a Cu(111) surface in a scanning tunneling microscope that, by design, show (nearly) pure orbital bands, including the p orbital flat band and Dirac cone.

Published
2020

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