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30 results on '"European Project: 785219,H2020,GrapheneCore2(2018)"'

1. Low-Cost Tin Compounds as Seeds for the Growth of Silicon Nanowire–Graphite Composites Used in High-Performance Lithium-Ion Battery Anodes

Author: Caroline Keller, Saravanan Karuppiah, Martin Raaen, Jingxian Wang, Patrice Perrenot, Dmitry Aldakov, Peter Reiss, Cédric Haon, Pascale Chenevier, SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Département de l'électricité et de l'hydrogène dans les transports (DEHT), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Solar fuels, hydrogen and catalysis (SolHyCat), Laboratoire de Chimie et Biologie des Métaux (LCBM - UMR 5249), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Département des Technologies des NanoMatériaux (DTNM), Synthèse, Structure et Propriétés de Matériaux Fonctionnels (STEP ), European Project: 785219,H2020,GrapheneCore2(2018), and European Project: 883264,Sun-to-X
Subjects: tinseeds, highloading, lithium-ion batteries, Materials Chemistry, Electrochemistry, Energy Engineering and Power Technology, Chemical Engineering (miscellaneous), [CHIM.MATE]Chemical Sciences/Material chemistry, Electrical and Electronic Engineering, silicon−graphite, low-cost anode
Abstract: International audience; Nanostructured silicon−graphite composites range among the best options forachieving next-generation high-energy anodes forhighperformance lithium-ion batteries. Growing silicon nanowires ongraphite give access tocomposites with high capacity andstability, asthesilicon distributes homogeneously intheelectrode, and thedirect contact provides enhanced mechanical stability even insilicon-rich (>25 wt%)active materials. However, thecost-effective production ofsuch composites remains achallenge. Here, we introduce low-cost catalysts, tinsulfide andtinoxide, enabling silicon nanowire growth atalower temperature than with widely used gold catalysts, and investigate their impact onthecomposite nanostructure andcomposition. The small difference detected inthecomposition oftheproducts obtained with both catalysts required thedevelopment ofareliable method tomeasure thelow-level oxygen content anddistribution within thecomposite. Itrevealed thatoxygen from theSnO 2 growth seeds isincorporated intothesilicon nanowires, while nosulfur from theSnScatalyst could bedetected. We show thatSnSseeds result inananode material ofsuperior initial Coulombic efficiency of81%, while capacity, stability incycling, andratecapability arelessaffected bythechoice ofthecatalyst. Thecomposite anodes, optimized foracapacity of1000 mAh g−1 at C/5rate, deliver anareal capacity ofupto3.6mAh cm−2 and82% capacity retention over 200cycles. Their ratecapability of780 mAh g−1 at5Csurpasses thatofgold-seeded silicon−graphite composites. Theinsight obtained from thisstudy provides guidance forthereliable low-cost synthesis andquality control ofsilicon-containing active materials forLi-ion battery anodes.
Published: 2023

2. Ectopic expression of a mechanosensitive channel confers spatiotemporal resolution to ultrasound stimulations of neurons for visual restoration

Author: Sara Cadoni, Charlie Demené, Ignacio Alcala, Matthieu Provansal, Diep Nguyen, Dasha Nelidova, Guillaume Labernède, Jules Lubetzki, Ruben Goulet, Emma Burban, Julie Dégardin, Manuel Simonutti, Gregory Gauvain, Fabrice Arcizet, Olivier Marre, Deniz Dalkara, Botond Roska, José Alain Sahel, Mickael Tanter, Serge Picaud, Institut de la Vision, Institut National de la Santé et de la Recherche Médicale (INSERM)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Physique pour la médecine (PhysMed Paris), Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Institute of Molecular and Clinical Ophthalmology Basel [Basel, Switzerland] (IMCOB), University of Pittsburgh School of Medicine, Pennsylvania Commonwealth System of Higher Education (PCSHE), Centre Hospitalier National d'Ophtalmologie des Quinze-Vingts (CHNO), Foundation Fighting Blindness, La Fondation pour la Recherche Médicale (FRM EQUIPE EQU202106012159), l’UNIM, la Fédération des Aveugles de France, Optic 2000, the city of Paris, Région ile de France, NIH CORE Grant P30 EY08098 to the Department of Ophthalmology, the Eye and Ear Foundation of Pittsburgh, unrestricted grant from Research to Prevent Blindness, New York, NY, ANR-10-LABX-0065,LIFESENSES,DES SENS POUR TOUTE LA VIE(2010), ANR-18-IAHU-0001,FOReSIGHT,Enabling Vision Restoration(2018), European Project: 610110,HELMHOLTZ, European Project: 785219,H2020,GrapheneCore2(2018), and European Project: 881603,Graphene flagship Core3
Subjects: [SDV]Life Sciences [q-bio], Biomedical Engineering, General Materials Science, Bioengineering, Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics
Abstract: Remote and precisely controlled activation of the brain is a fundamental challenge in the development of brain–machine interfaces for neurological treatments. Low-frequency ultrasound stimulation can be used to modulate neuronal activity deep in the brain, especially after expressing ultrasound-sensitive proteins. But so far, no study has described an ultrasound-mediated activation strategy whose spatiotemporal resolution and acoustic intensity are compatible with the mandatory needs of brain–machine interfaces, particularly for visual restoration. Here we combined the expression of large-conductance mechanosensitive ion channels with uncustomary high-frequency ultrasonic stimulation to activate retinal or cortical neurons over millisecond durations at a spatiotemporal resolution and acoustic energy deposit compatible with vision restoration. The in vivo sonogenetic activation of the visual cortex generated a behaviour associated with light perception. Our findings demonstrate that sonogenetics can deliver millisecond pattern presentations via an approach less invasive than current brain–machine interfaces for visual restoration.
Published: 2023

3. Ferromagnetism and Rashba Spin–Orbit Coupling in the Two-Dimensional (V,Pt)Se2 Alloy

Author: Emilio Vélez-Fort, Ali Hallal, Roberto Sant, Thomas Guillet, Khasan Abdukayumov, Alain Marty, Céline Vergnaud, Jean-François Jacquot, Denis Jalabert, Jun Fujii, Ivana Vobornik, Julien Rault, Nicholas B. Brookes, Danilo Longo, Philippe Ohresser, Abdelkarim Ouerghi, Jean-Yves Veuillen, Pierre Mallet, Hervé Boukari, Hanako Okuno, Mairbek Chshiev, Frédéric Bonell, Matthieu Jamet, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), European Synchrotron Radiation Facility (ESRF), Conception d’Architectures Moléculaires et Processus Electroniques (CAMPE ), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Département Interfaces pour l'énergie, la Santé et l'Environnement (DIESE), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Laboratorio TASC (IOM CNR), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), CNR Istituto Officina dei Materiali (IOM), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Nano-Electronique Quantique et Spectroscopie (NEEL - QuNES), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Universitaire de France (IUF), Ministère de l'Education nationale, de l’Enseignement supérieur et de la Recherche (M.E.N.E.S.R.), ANR-18-CE24-0007,MAGICVALLEY,Polarisation de vallée induite par couplage d'échange magnétique dans les matériaux 2D à grande échelle(2018), ANR-10-LABX-0051,LANEF,Laboratory of Alliances on Nanosciences - Energy for the Future(2010), and European Project: 785219,H2020,GrapheneCore2(2018)
Subjects: Condensed Matter::Materials Science, Materials Chemistry, Electrochemistry, Condensed Matter::Strongly Correlated Electrons, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Electronic, Optical and Magnetic Materials
Abstract: 5 pages, 5 figures; International audience; We report on a two-dimensional (2D) V1–xPtxSe2 alloy that exhibits ferromagnetic order and Rashba spin–orbit coupling. Although ferromagnetism is absent in 1T-VSe2 because of the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe2 (10–50%) to form a homogeneous 2D alloy restores ferromagnetic order down to one monolayer of V0.65Pt0.35Se2. Moreover, the presence of platinum atoms gives rise to Rashba spin–orbit coupling in (V,Pt)Se2, providing an original platform to study the interplay between ferromagnetism and spin–orbit coupling in the 2D limit.
Published: 2022

4. Easy Diameter Tuning of Silicon Nanowires with Low-Cost SnO2-Catalyzed Growth for Lithium-Ion Batteries

Author: Caroline Keller, Yassine Djezzar, Jingxian Wang, Saravanan Karuppiah, Gérard Lapertot, Cédric Haon, Pascale Chenevier, Instrumentation, Material and Correlated Electrons Physics (IMAPEC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Synthèse, Structure et Propriétés de Matériaux Fonctionnels (STEP ), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), European Project: 785219,H2020,GrapheneCore2(2018), and European Project: 883264,Sun-to-X
Subjects: anode, General Chemical Engineering, growth, lithium-ion batteries, General Materials Science, silicon nanowires, tin oxide, composite, [CHIM.MATE]Chemical Sciences/Material chemistry
Abstract: International audience; Silicon nanowires are appealing structures to enhance the capacity of anodes in lithium-ion batteries. However, to attain industrial relevance, their synthesis requires a reduced cost. An important part of the cost is devoted to the silicon growth catalyst, usually gold. Here, we replace gold with tin, introduced as low-cost tin oxide nanoparticles, to produce a graphite–silicon nanowire composite as a long-standing anode active material. It is equally important to control the silicon size, as this determines the rate of decay of the anode performance. In this work, we demonstrate how to control the silicon nanowire diameter from 10 to 40 nm by optimizing growth parameters such as the tin loading and the atmosphere in the growth reactor. The best composites, with a rich content of Si close to 30% wt., show a remarkably high initial Coulombic efficiency of 82% for SiNWs 37 nm in diameter.
Published: 2022

5. Low-Frequency Noise Parameter Extraction Method for Single-Layer Graphene FETs

Author: Henri Happy, Jose A. Garrido, Nathan Schaefer, Emiliano Pallecchi, David Jiménez, Andrea Bonaccini Calia, D. Vignaud, Wei Wei, Nikolaos Mavredakis, Ramon Garcia Cortadella, Universitat Autònoma de Barcelona (UAB), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon - IEMN (CARBON - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), ICN2 - Institut Catala de Nanociencia i Nanotecnologia (ICN2), This work was supported in part by the European Union’s Horizon 2020 Research and Innovation Program under Grant GrapheneCore2 785219 (Graphene Flagship), in part by Marie Skłodowska-Curie under Grant 665919 and Grant 732032 (BrainCom), in part by the Spanish Government under Project TEC2015-67462-C2-1-R, Project RTI2018-097876-B-C21 (MCIU/AEI/FEDER, UE), and Project 001-P-001702 (RIS3CAT), and in part by the French RENATECH network. The ICN2was supported by the Severo Ochoa Centers of Excellence Program funded by the Spanish Research Agency (AEI), under Grant SEV-2017-0706, Renatech Network, European Project: 785219,H2020,GrapheneCore2(2018), and Carbon-IEMN (CARBON-IEMN)
Subjects: Infrasound, FOS: Physical sciences, Applied Physics (physics.app-ph), Parameter extraction, Lambda, 01 natural sciences, Noise (electronics), Omega, law.invention, Graphene transistor, Low-frequency noise, law, Compact model, 0103 physical sciences, Electrical and Electronic Engineering, parameter extraction, 010302 applied physics, Physics, Condensed matter physics, Velocity saturation, Transistor, Contact resistance, Physics - Applied Physics, low-frequency noise (LFN), graphene transistor (GFET), [SPI.TRON]Engineering Sciences [physics]/Electronics, Electronic, Optical and Magnetic Materials, single layer (SL), Single layer, Voltage
Abstract: In this article, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single-layer (SL) graphene transistors (GFETs) based on a recently established compact LFN model. The drain current and LFN of two short channel back-gated GFETs ( ${L} = {300}$ and 100 nm) were measured at lower and higher drain voltages, for a wide range of gate voltages covering the region away from charge neutrality point (CNP) up to CNP at p-type operation region. Current–voltage ( IV ) and LFN data were also available from a long-channel SL top solution-gated (SG) GFET ( ${L} = {5}\,\,\mu \text{m}$ ), for both p- and n-type regions near and away CNP. At each of these regimes, the appropriate IV and LFN parameters can be accurately extracted. Regarding LFN, mobility fluctuation effect is dominant at CNP, and from there, the Hooge parameter $\alpha _{H}$ can be extracted, whereas the carrier number fluctuation contribution which is responsible for the well-known M-shape bias dependence of output noise divided by squared drain current, also observed in our data, makes possible the extraction of the ${N}_{T}$ parameter related to the number of traps. In the less possible case of a $\Lambda $ -shape trend, ${N}_{T}$ and $\alpha _{H}$ can be extracted simultaneously from the region near CNP. Away from CNP, contact resistance can have a significant contribution to LFN, and from there, the relevant parameter ${S}_{\Delta {R}}^{{2}}$ is defined. The LFN parameters described above can be estimated from the low drain voltage region of operation where the effect of velocity saturation (VS) mechanism is negligible. VS effect results in the reduction of LFN at higher drain voltages, and from there, the IV parameter $h\Omega $ which represents the phonon energy and is related to VS effect can be derived both from drain current and LFN data.
Published: 2020

6. Ab Initio study of graphene/hBN Van der Waals heterostructures: effect of electric field, twist angles and p-n doping on the electronic properties

Author: Giacomo GIORGI, Maurizia Palummo, Claudio Attaccalite, Simone Brozzesi, Francesco Buonocore, Olivia Pulci, Brozzesi, S., Attaccalite, C., Buonocore, F., Giorgi, G., Palummo, M., Pulci, O., Università degli Studi di Roma Tor Vergata [Roma], Centre National de la Recherche Scientifique (CNRS), Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Italian National agency for new technologies, Energy and sustainable economic development [Frascati] (ENEA), Università degli Studi di Perugia = University of Perugia (UNIPG), European Project: 785219,H2020,GrapheneCore2(2018), and European Project: 824158,H2020-EU.1.4. - EXCELLENT SCIENCE - Research Infrastructures ,EoCoE-II(2019)
Subjects: Settore FIS/03, General Chemical Engineering, graphene, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], THz nanodevices, Van der Waals heterostructures, General Materials Science, h-BN, density functional theory
Abstract: International audience; In this work, we study the structural and electronic properties of boron nitride bilayers sandwiched between graphene sheets. Different stacking, twist angles, doping, as well as an applied external gate voltage, are reported to induce important changes in the electronic band structure near the Fermi level. Small electronic lateral gaps of the order of few meV can appear near the Dirac points K. We further discuss how the bandstructures change applying a perpendicular external electric field, showing how its application lifts the degeneracy of the Dirac cones and, in the twisted case, moves their crossing points away from the Fermi energy. Then, we consider the possibility of co-doping, in an asymmetric way, the two external graphene layers. This is a situation that could be realized in heterostructures deposited on a substrate. We show that the co-doping acts as an effective external electric field, breaking the Dirac cones degeneracy. Finally, our work demonstrates how, by playing with field strength and p-n co-doping, it is possible to tune the small lateral gaps, pointing towards a possible application of C/BN sandwich structures as nano-optical terahertz devices.
Published: 2022

7. Gut microbiota impairment following graphene oxide exposure is associated to physiological alterations in Xenopus laevis tadpoles

Author: Lauris, Evariste, Florence, Mouchet, Eric, Pinelli, Emmanuel, Flahaut, Laury, Gauthier, Maialen, Barret, Laboratoire Ecologie Fonctionnelle et Environnement (LEFE), Institut Ecologie et Environnement (INEE), Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Observatoire Midi-Pyrénées (OMP), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Météo-France -Institut de Recherche pour le Développement (IRD)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Météo-France -Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Centre interuniversitaire de recherche et d'ingenierie des matériaux (CIRIMAT), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), European Project: 881603,H2020,H2020-SGA-FET-GRAPHENE-2019, GrapheneCore3(2020), European Project: 785219,H2020,GrapheneCore2(2018), and European Project: 696656,H2020,H2020-Adhoc-2014-20,GrapheneCore1(2016)
Subjects: History, Environmental Engineering, Bacteria, Polymers and Plastics, Microbiota, Amphibian, Aquatic ecotoxicology, Pollution, Industrial and Manufacturing Engineering, Gastrointestinal Microbiome, [SPI.MAT]Engineering Sciences [physics]/Materials, Microbial ecology, Xenopus laevis, Larva, Animals, Environmental Chemistry, Graphite, Business and International Management, Nanotoxicology, Waste Management and Disposal
Abstract: International audience; Graphene-based nanomaterials such as graphene oxide (GO) possess unique properties triggering high expectations for the development of technological applications. Thus, GO is likely to be released in aquatic ecosystems. It is essential to evaluate its ecotoxicological potential to ensure a safe use of these nanomaterials. In amphibians, previous studies highlighted X. laevis tadpole growth inhibitions together with metabolic disturbances and genotoxic effects following GO exposure. As GO is known to exert bactericidal effects whereas the gut microbiota constitutes a compartment involved in host homeostasis regulation, it is important to determine if this microbial compartment constitutes a toxicological pathway involved in known GO-induced host physiological impairments. This study investigates the potential link between gut microbial communities and host physiological alterations. For this purpose, X. laevis tadpoles were exposed during 12 days to GO. Growth rate was monitored every 2 days and genotoxicity was assessed through enumeration of micronucleated erythrocytes. Genomic DNA was also extracted from the whole intestine to quantify gut bacteria and to analyze the community composition. GO exposure led to a dose dependent growth inhibition and genotoxic effects were detected following exposure to low doses. A transient decrease of the total bacteria was noticed with a persistent shift in the gut microbiota structure in exposed animals. Genotoxic effects were associated to gut microbiota remodeling characterized by an increase of the relative abundance of Bacteroides fragilis. The growth inhibitory effects would be associated to a shift in the Firmicutes/Bacteroidetes ratio while metagenome inference suggested changes in metabolic pathways and upregulation of detoxification processes. This work indicates that the gut microbiota compartment is a biological compartment of interest as it is integrative of host physiological alterations and should be considered for ecotoxicological studies as structural or functional impairments could lead to later life host fitness loss.
Published: 2023

8. Radiative lifetime of free excitons in hexagonal boron nitride

Author: James H. Edgar, Catherine Journet, Takashi Taniguchi, Vincent Garnier, Sébastien Roux, Eli Janzen, Bérangère Toury, Philippe Steyer, Kenji Watanabe, François Ducastelle, Fulvio Paleari, Lorenzo Sponza, Julien Barjon, Christophe Arnold, Annick Loiseau, LEM, UMR 104, CNRS-ONERA, Université Paris-Saclay (Laboratoire d'étude des microstructures), ONERA-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Istituto di Struttura della Materia (CNR-ISM), Consiglio Nazionale delle Ricerche [Roma] (CNR), Kansas State University, Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), National Institute for Materials Science (NIMS), DMAS, ONERA, Université Paris Saclay [Châtillon], ONERA-Université Paris-Saclay, Support for the APHT hBN crystal growth comes from the Office of Naval Research, Award No. N00014-20-1-2474. K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan (Grant No. JPMXP0112101001) and JSPS KAKENHI (Grants No. 19H05790 and No. JP20H00354)., European Project: 785219,H2020,GrapheneCore2(2018), European Project: 881603,H2020,H2020-SGA-FET-GRAPHENE-2019, GrapheneCore3(2020), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Exciton, FOS: Physical sciences, Quantum yield, Hexagonal boron nitride, Cathodoluminescence, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Condensed Matter::Materials Science, 0103 physical sciences, Radiative transfer, 010306 general physics, Condensed Matter - Materials Science, business.industry, Condensed Matter::Other, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Semiconductor, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Direct and indirect band gaps, 0210 nano-technology, business, Luminescence
Abstract: International audience; Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect excitons in hBN is equal to 27 ns, which is much shorter than in other indirect bandgap semiconductors. This is explained by the close proximity of the electron and the hole in the exciton complex, and also by the small energy difference between indirect and direct excitons. The unusually high luminescence efficiency of hBN for an indirect bandgap is therefore semi-quantitatively understood.
Published: 2021

9. Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer

Author: Salk, Soukaina, Pandey, Reetu Raj, Pham, Phi, Zhou, Di, Wei, Wei, Cochez, Guillaume, Vignaud, Dominique, Pallecchi, Emiliano, Burke, Peter, Happy, Henri, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), University of California [Irvine] (UC Irvine), University of California (UC), Carbon - IEMN (CARBON - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), We acknowledge support from the Army Research Office through the ARO (Contract No: W911NF-18-1-0076 and W911NF2010103), National Institutes of Health (Contract No: CA182384), the European Union’s Horizon 2020 research and innovation program under phase of the Graphene Flagship GrapheneCore2 785219 and GrapheneCore3 881603 and the French American Cultural Exchange (FACE) Partner University Fund program. This work was also partly supported by the French RENATECH network., Renatech Network, European Project: 785219,H2020,GrapheneCore2(2018), and European Project: 881603,H2020,H2020-SGA-FET-GRAPHENE-2019, GrapheneCore3(2020)
Subjects: [SPI]Engineering Sciences [physics], Chemistry, electrical characterization, Raman spectroscopy, bubble-free transfer, defect-free, QD1-999, monocrystalline graphene, Article, electrochemical delamination
Abstract: International audience; In this work, we have investigated the influence of the transfer process on the monocrystalline graphene in terms of quality, morphology and electrical properties by analyzing the data obtained from optical microscopy, scanning electron microscopy, Raman spectroscopy and electrical characterizations. The influence of Cu oxidation on graphene prior to the transfer is also discussed. Our results show that the controlled bubbling electrochemical delamination transfer is an easy and fast transfer technique suitable for transferring large single crystals graphene without degrading the graphene quality. Moreover, Raman spectroscopy investigation reveals that the Cu surface oxidation modifies the strain of the graphene film. We have observed that graphene laying on unoxidized Cu is subject to a biaxial strain in compression, while graphene on Cu oxide is subject to a biaxial strain in tension. However, after graphene was transferred to a host substrate, these strain effects were strongly reduced, leaving a homogeneous graphene on the substrate. The transferred single crystal graphene on silicon oxide substrate was used to fabricate transmission line method (TLM) devices. Electrical measurements show low contact resistance ~150 Ω·µm, which confirms the homogeneity and high quality of transferred graphene.
Published: 2021
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10. Scalable Sacrificial Templating to Increase Porosity and Platinum Utilisation in Graphene-Based Polymer Electrolyte Fuel Cell Electrodes

Author: Christopher A. Howard, Dan J. L. Brett, Milo S. P. Shaffer, Gérard Gebel, Paul R. Shearing, Marie Heitzmann, Theo M. Suter, Cecilia Mattevi, Laure Guétaz, Noelia Rubio Carrero, Paul F. McMillan, Adam J. Clancy, University College of London [London] (UCL), Imperial College London, Département de l'électricité et de l'hydrogène dans les transports (DEHT), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Département des Technologies des NanoMatériaux (DTNM), European Project: 785219,H2020,GrapheneCore2(2018), European Project: 881603,H2020-SGA-FET-GRAPHENE-2019,GrapheneCore3, and Commission of the European Communities
Subjects: Materials science, porosity, General Chemical Engineering, chemistry.chemical_element, 02 engineering and technology, Electrolyte, fuel cells, 010402 general chemistry, electrode structure, 01 natural sciences, 7. Clean energy, Article, Corrosion, law.invention, law, [CHIM]Chemical Sciences, General Materials Science, 0912 Materials Engineering, Porosity, QD1-999, 1007 Nanotechnology, Graphene, graphene, [CHIM.CATA]Chemical Sciences/Catalysis, Carbon black, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Chemistry, chemistry, Chemical engineering, Electrode, 0210 nano-technology, Platinum, spacers, Carbon
Abstract: Polymer electrolyte fuel cells hold great promise for a range of applications but require advances in durability for widespread commercial uptake. Corrosion of the carbon support is one of the main degradation pathways, hence, corrosion-resilient graphene has been widely suggested as an alternative to traditional carbon black. However, the performance of bulk graphene-based electrodes is typically lower than that of commercial carbon black due to their stacking effects. This article reports a simple, scalable and non-destructive method through which the pore structure and platinum utilisation of graphene-based membrane electrode assemblies can be significantly improved. Urea is incorporated into the catalyst ink before deposition, and is then simply removed from the catalyst layer after spraying by submerging the electrode in water. This additive hinders graphene restacking and increases porosity, resulting in a significant increase in Pt utilisation and current density. This technique does not require harsh template etching and it represents a pathway to significantly improve graphene-based electrodes by introducing hierarchical porosity using scalable liquid processes.
Published: 2021

11. Tuning the Direct and Indirect Excitonic Transitions of h-BN by Hydrostatic Pressure

Author: Kenji Watanabe, Alfredo Segura, Ramón Cuscó, Lluís Artús, Claudio Attaccalite, Takashi Taniguchi, Ministerio de Economía y Competitividad (España), European Commission, Cuscó, Ramón, Artús, Lluís, Universitat de València (UV), Consejo Superior de Investigaciones Científicas [Spain] (CSIC), Centre National de la Recherche Scientifique (CNRS), Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), National Institute for Materials Science (NIMS), European Project: 785219,H2020,GrapheneCore2(2018), Cuscó, Ramón [0000-0001-9490-4884], and Artús, Lluís [0000-0001-7912-8944]
Subjects: Materials science, Band gap, Exciton, Binding energy, Hydrostatic pressure, Physics::Optics, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Molecular physics, Article, Crystal, Condensed Matter::Materials Science, Electrical resistivity and conductivity, 0103 physical sciences, Electrical conductivity, Physical and Theoretical Chemistry, 010306 general physics, Absorption (electromagnetic radiation), Energy, Optical properties, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, General Energy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Excitons,Absorption, Direct and indirect band gaps, 0210 nano-technology
Abstract: The pressure dependence of the direct and indirect bandgap transitions of hexagonal boron nitride is investigated using optical reflectance under hydrostatic pressure in an anvil cell with sapphire windows up to 2.5 GPa. Features in the reflectance spectra associated with the absorption at the direct and indirect bandgap transitions are found to downshift with increasing pressure, with pressure coefficients of −26 ± 2 and −36 ± 2 meV GPa–1, respectively. The GW calculations yield a faster decrease of the direct bandgap with pressure compared to the indirect bandgap. Including the strong excitonic effects through the Bethe–Salpeter equation, the direct excitonic transition is found to have a much lower pressure coefficient than the indirect excitonic transition. This suggests a strong variation of the binding energy of the direct exciton with pressure. The experiments corroborate the theoretical predictions and indicate an enhancement of the indirect nature of the bulk hexagonal boron nitride crystal under hydrostatic pressure., This work was supported by the Spanish MINECO/FEDER under Grant Nos. MAT2015-71035-R, MAT2016-75586-C4- 1-P, and PID2019-106383GB-C41. C.A. acknowledges funding from the European Union Seventh Framework Program under Grant Agreement No. 785219 Graphene Core 2 and COST Action TUMIEE CA17126. K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, Grant No. JPMXP0112101001, JSPS KAKENHI Gr a n t No. JP20H00354 , and the CREST(JPMJCR15F3), JST.
Published: 2021

12. Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride

Author: Fournier, Clarisse, Plaud, Alexandre, Roux, Sébastien, Pierret, Aurélie, Rosticher, Michael, Watanabe, Kenji, Taniguchi, Takashi, Buil, Stéphanie, Quélin, Xavier, Barjon, Julien, Hermier, Jean-Pierre, Delteil, Aymeric, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), LEM, UMR 104, CNRS-ONERA, Université Paris-Saclay (Laboratoire d'étude des microstructures), ONERA-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique de l'ENS - ENS Paris (LPENS (UMR_8023)), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), National Institute for Materials Science (NIMS), and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, Grant No. JPMXP0112101001, JSPS KAKENHI Grant No. JP20H00354 and the CREST (JPMJCR15F3), JST., ANR-14-CE08-0018,GoBN,Hétérostructures de graphènes blanc et noir(2014), European Project: 785219,H2020,GrapheneCore2(2018), European Project: 881603,H2020,H2020-SGA-FET-GRAPHENE-2019, GrapheneCore3(2020), Laboratoire de physique de l'ENS - ENS Paris (LPENS), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité)-Département de Physique de l'ENS-PSL, École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL), and Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP)-Sorbonne Université (SU)-École normale supérieure - Paris (ENS Paris)
Subjects: Quantum Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Condensed Matter - Mesoscale and Nanoscale Physics, Science, FOS: Physical sciences, Two-dimensional materials, Article, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Quantum Physics (quant-ph), Single photons and quantum effects, Optics (physics.optics), Physics - Optics
Abstract: Single photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate control of both the spatial location and the emission wavelength of the quantum emitters is essentially lacking to date, thus hindering further technological steps towards scalable quantum photonic devices. Here, we evidence SPEs in high purity synthetic hexagonal boron nitride (hBN) that can be activated by an electron beam at chosen locations. SPE ensembles are generated with a spatial accuracy better than the cubed emission wavelength, thus opening the way to integration in optical microstructures. Stable and bright single photon emission is subsequently observed in the visible range up to room temperature upon non-resonant laser excitation. Moreover, the low-temperature emission wavelength is reproducible, with an ensemble distribution of width 3 meV, a statistical dispersion that is more than one order of magnitude lower than the narrowest wavelength spreads obtained in epitaxial hBN samples. Our findings constitute an essential step towards the realization of top-down integrated devices based on identical quantum emitters in 2D materials., Main text and supplementary information: 22 pages, 11 figures
Published: 2021

13. Tuning graphene transistors through ad hoc electrostatics induced by a nanometer-thick molecular underlayer

Author: Ather Mahmood, Pierre Braunstein, Jean-Francois Dayen, Alessio Ghisolfi, Bernard Doudin, Hyunju Chang, Lucie Routaboul, Jeong-O Lee, Laetitia Bernard, Cheol-Soo Yang, Seunghun Jang, Tindara Verduci, Paolo Samorì, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), Université de Strasbourg (UNISTRA)-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA), Korea Research Institute of Chemical Technology, Laboratoire de chimie de coordination (LCC), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie de Toulouse (ICT-FR 2599), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie de Strasbourg, Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Swiss Federal Laboratories for Materials Science and Technology [Dübendorf] (EMPA), Institut de Science et d'ingénierie supramoléculaires (ISIS), Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA), Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université de Strasbourg (UNISTRA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université de Strasbourg (UNISTRA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, International Center for Frontier Research in Chemistry (icFRC), National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (NRF_2011-K2A1A5-2011-0031552), ANR-10-IDEX-0002,UNISTRA,Par-delà les frontières, l'Université de Strasbourg(2010), and European Project: 785219,H2020,GrapheneCore2(2018)
Subjects: Capacitive coupling, Materials science, business.industry, Graphene, Chimie/Matériaux, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, Electrostatics, 01 natural sciences, 0104 chemical sciences, law.invention, Condensed Matter::Materials Science, Hysteresis, Dipole, law, Electric field, Molecular film, Optoelectronics, General Materials Science, Physics::Chemical Physics, 0210 nano-technology, business, Layer (electronics)
Abstract: We report on the modulation of the electrical properties of graphene-based transistors that mirror the properties of a few nanometers thick layer made of dipolar molecules sandwiched in between the 2D material and the SiO2 dielectric substrate. The chemical composition of the films of quinonemonoimine zwitterion molecules adsorbed onto SiO2 has been explored by means of X-ray photoemission and mass spectroscopy. Graphene-based devices are then fabricated by transferring the 2D material onto the molecular film, followed by the deposition of top source-drain electrodes. The degree of supramolecular order in disordered films of dipolar molecules was found to be partially improved as a result of the electric field at low temperatures, as revealed by the emergence of hysteresis in the transfer curves of the transistors. The use of molecules from the same family, which are suitably designed to interact with the dielectric surface, results in the disappearance of the hysteresis. DFT calculations confirm that the dressing of the molecules by an external electric field exhibits multiple minimal energy landscapes that explain the thermally stabilized capacitive coupling observed. This study demonstrates that the design and exploitation of ad hoc molecules as an interlayer between a dielectric substrate and graphene represents a powerful tool for tuning the electrical properties of the 2D material. Conversely, graphene can be used as an indicator of the stability of molecular layers, by providing insight into the energetics of ordering of dipolar molecules under the effect of electrical gating.
Published: 2019

14. Excitons in bulk black phosphorus evidenced by photoluminescence at low temperature

Author: I. Stenger, Lorenzo Sponza, Annick Loiseau, Julien Barjon, Etienne Gaufrès, Etienne Carré, Alain Lusson, LEM, UMR 104, CNRS-ONERA, Université Paris-Saclay (Laboratoire d'étude des microstructures), ONERA-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), DMAS, ONERA, Université Paris Saclay [Châtillon], ONERA-Université Paris-Saclay, Laboratoire Photonique, Numérique et Nanosciences (LP2N), Université de Bordeaux (UB)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS), ANR-17-CE24-0023,EPOS-BP,Electroluminescence en spin polarisés dans les couches minces de phosphore noir(2017), European Project: 785219,H2020,GrapheneCore2(2018), and European Project: 881603,H2020,H2020-SGA-FET-GRAPHENE-2019, GrapheneCore3(2020)
Subjects: Materials science, Photoluminescence, Infrared, Band gap, Exciton, Binding energy, FOS: Physical sciences, 02 engineering and technology, Activation energy, 01 natural sciences, Molecular physics, Condensed Matter::Materials Science, Impurity, Computer Science::Systems and Control, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, General Materials Science, 010306 general physics, Quenching, Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter::Other, Mechanical Engineering, Materials Science (cond-mat.mtrl-sci), General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 3. Good health, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, Optics (physics.optics), Physics - Optics
Abstract: Atomic layers of Black Phosphorus (BP) present unique opto-electronic properties dominated by a direct tunable bandgap in a wide spectral range from visible to mid-infrared. In this work, we investigate the infrared photoluminescence of BP single crystals at very low temperature. Near-bandedge recombinations are observed at 2 K, including dominant excitonic transitions at 0.276 eV and a weaker one at 0.278 eV. The free-exciton binding energy is calculated with an anisotropic Wannier-Mott model and found equal to 9.1 meV. On the contrary, the PL intensity quenching of the 0.276 eV peak at high temperature is found with a much smaller activation energy, attributed to the localization of free excitons on a shallow impurity. This analysis leads us to attribute respectively the 0.276 eV and 0.278 eV PL lines to bound excitons and free excitons in BP. As a result, the value of bulk BP bandgap is refined to 0.287 eV at 2K., 12 pages, 3 figures - Main text 13 pages, 6 figures - Supporting information
Published: 2021

15. Bias-dependent intrinsic rf thermal noise modeling and characterization of single-layer graphene fets

Author: Nikolaos Mavredakis, David Jiménez, Wei Wei, Paulius Sakalas, Anibal Pacheco-Sanchez, Henri Happy, Emiliano Pallecchi, Universitat Autònoma de Barcelona (UAB), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Carbon - IEMN (CARBON - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), This work was funded by the European Union’s Horizon 2020 research and innovation program under Grant Agreement No. GrapheneCore2 785219 and No. GrapheneCore3 881603. We also acknowledge financial support by Spanish government under the projects RTI2018-097876-B-C21 (MCIU/AEI/FEDER, UE) and project 001-P-001702- GraphCat: Comunitat Emergent de Grafè a Catalunya, co-funded by FEDER within the framework of Programa Operatiu FEDER de Catalunya 2014-2020. This work was partly supported by the French RENATECH network., Renatech Network, European Project: 785219,H2020,GrapheneCore2(2018), and European Project: 881603,H2020,H2020-SGA-FET-GRAPHENE-2019, GrapheneCore3(2020)
Subjects: Thermal noise, Bias dependence, Semiconductor device modeling, FOS: Physical sciences, 02 engineering and technology, Intrinsic channel, Noise (electronics), law.invention, law, MOSFET, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Compact model, 0202 electrical engineering, electronic engineering, information engineering, Figure of merit, Electrical and Electronic Engineering, Excess noise factor, Velocity saturation (vs), Electronic circuit, Physics, Radiation, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Graphene, Velocity saturation, Transistor, 020206 networking & telecommunications, Condensed Matter Physics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Graphene transistor (gfet), Optoelectronics, business
Abstract: International audience; In this article, the bias dependence of intrinsic channel thermal noise of single-layer (SL) graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observations and compact modeling. The findings indicate an increase of the specific noise as drain current increases, whereas a saturation trend is observed at very high carrier density regime. Besides, short-channel effects, such as velocity saturation (VS) also result in an increment of noise at higher electric fields. The main goal of this work is to propose a physics-based compact model that accounts for and accurately predicts the above experimental observations in short-channel GFETs. In contrast to long-channel MOSFET-based models adopted previously to describe thermal noise in graphene devices without considering the degenerate nature of graphene, in this work, a model for short-channel GFETs embracing the 2-D material's underlying physics and including a bias dependence is presented. The implemented model is validated with deembedded high-frequency data from two short-channel devices at quasi-static (QS) region of operation. The model precisely describes the experimental data for a wide range of low-to-high drain current values without the need of any fitting parameter. Moreover, the consideration of the degenerate nature of graphene reveals a significant decrease of noise in comparison with the nondegenerate case and the model accurately captures this behavior. This work can also be of utmost significance from the circuit designers' aspect since noise excess factor, a very important figure of merit for RF circuits implementation, is defined and characterized for the first time in graphene transistors. © 1963-2012 IEEE.
Published: 2021

16. Graphene field-effect transistors with velocity saturation

Author: MELE, David, WILMART, Q., Boukhicha, M., Graef, H., Fruleux, D., Schmitt, A., Palomo, J., Rosticher, M., Taniguchi, T., Watanabe, K., Bouchiat, V., BAUDIN, E., Berroir, J.M., Feve, G., BOCQUILLON, E., Pallecchi, Emiliano, Placais, B., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon - IEMN (CARBON - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), flagship graphene, Renatech Network, European Project: 785219,H2020,GrapheneCore2(2018), European Project: 881603,H2020,H2020-SGA-FET-GRAPHENE-2019, GrapheneCore3(2020), and Carbon-IEMN (CARBON-IEMN)
Subjects: [SPI]Engineering Sciences [physics], ComputingMethodologies_GENERAL, ComputingMilieux_MISCELLANEOUS
Abstract: poster; National audience
Published: 2020

17. Hierarchical large-scale elastic metamaterials as an innovative passive isolation strategy for seismic wave mitigation

Author: Nicola M. Pugno, Miguel Onorato, Marco Miniaci, Federico Bosia, Antonio Gliozzi, Nesrine Kherraz, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Acoustique - IEMN, Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Dipartimento di Fisica [Torino], Università degli studi di Torino (UNITO), Politecnico di Torino = Polytechnic of Turin (Polito), University of Trento [Trento], MM has received funding from the European Union’s Horizon 2020 research and innovation programme underthe Marie Sklodowska Curie grant agreement N. 754364. NK, MM, FB, ASG, MO have received funding fromthe project 'Metapp' (No. CSTO160004) funded by Fondazione San Paolo and by the European Union’s Horizon2020 FET Open ('Boheme') under grant agreement No. 863179. NMP is supported by the European Commissionunder the Graphene Flagship Core 2 Grant no. 785219 (WP14 'Composites') and FET Proactive 'Neurofibres'Grant no. 732344 as well as by the Italian Ministry of Education, University and Research (MIUR) under the'Departments of Excellence' Grant L.232/2016, the ARS01-01384-PROSCAN Grant and the PRIN-20177TTP3S., European Project: 785219,H2020,GrapheneCore2(2018), European Project: 863179,H2020,H2020-FETOPEN-2018-2019-2020-01,BOHEME(2020), Acoustique - IEMN (ACOUSTIQUE - IEMN), and Università degli studi di Torino = University of Turin (UNITO)
Subjects: Hierarchy, Earthquake engineering, Scale (ratio), Computer science, Metamaterial, 01 natural sciences, Seismic wave, 010305 fluids & plasmas, [SPI]Engineering Sciences [physics], Reduced size, 0103 physical sciences, Electronic engineering, Hierarchical organization, Isolation (database systems), 010306 general physics
Abstract: International audience; Large scale elastic metamaterials as an innovative passive isolation strategy for seismic waves has recently attracted increasing interest in the scientific community. In this work, we investigate the feasibility of an innovative design based on hierarchical organization of the unit cell, i.e. a structure having a self-similar geometry repeated at different scale levels. Results show how the introduction of hierarchy allows the conception of unit cells exhibiting reduced size while attaining good isolation efficiency at frequencies of interest for earthquake engineering.
Published: 2020

18. Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems

Author: Deji Akinwande, Jack C. Lee, Guillaume Ducournau, Xiaohan Wu, Henri Happy, Ruijing Ge, Emiliano Pallecchi, Myungsoo Kim, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQ THz - IEMN), The characterization part of this work was partly supported by the European Union’s Horizon 2020 research and innovation programme under the phase of the Graphene Flagship GrapheneCore2 785219, by an ANR TERASONIC grant (17-CE24) and by the CPER Photonics for Society, the Hauts-de-France regional council and the TERIL-WAVES project (I-Site ULNE and MEL)., This work was supported in part by the Office of Naval Research grant N00014-20-1-2104, the National Science Foundation (NSF) grant no. 1809017 and Engineering Research Center Cooperative Agreement no. EEC-1160494. D.A. acknowledges the Presidential Early Career Award for Scientists and Engineers (PECASE) through the Army Research Office Award no. W911NF-16-1-0277. The fabrication was partly done at the Texas Nanofabrication Facility supported by NSF grant NNCI-1542159., PCMP CHOP, Renatech Network, ANR-17-CE24-0044,TERASONIC,Transmissions TERAhertz combinant électronique état SOlide et photoNIQue(2017), European Project: 785219,H2020,GrapheneCore2(2018), Carbon - IEMN (CARBON - IEMN), and Photonique THz - IEMN (PHOTONIQUE THz - IEMN)
Subjects: Materials science, Band gap, Terahertz radiation, 02 engineering and technology, Dielectric, 010402 general chemistry, 01 natural sciences, law.invention, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], law, Insertion loss, Figure of merit, Electrical and Electronic Engineering, Instrumentation, business.industry, Transistor, Heterojunction, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, chemistry, Boron nitride, Optoelectronics, 0210 nano-technology, business
Abstract: Hexagonal boron nitride (hBN) has a large bandgap, high phonon energies and an atomically smooth surface absent of dangling bonds. As a result, it has been widely used as a dielectric to investigate electron physics in two-dimensional heterostructures and as a dielectric in the fabrication of two-dimensional transistors and optoelectronic devices. Here we show that hBN can be used to create analogue switches for applications in communication systems across radio, 5G and terahertz frequencies. Our approach relies on the non-volatile resistive switching capabilities of atomically thin hBN. The switches are composed of monolayer hBN sandwiched between two gold electrodes and exhibit a cutoff-frequency figure of merit of around 129 THz with a low insertion loss (≤0.5 dB) and high isolation (≥10 dB) from 0.1 to 200 GHz, as well as a high power handling (around 20 dBm) and nanosecond switching speeds, metrics that are superior to those of existing solid-state switches. Furthermore, the switches are 50 times more efficient than other non-volatile switches in terms of a d.c. energy-consumption metric, which is an important consideration for ubiquitous mobile systems. We also illustrate the potential of the hBN switches in a communication system with an 8.5 Gbit s–1 data transmission rate at 100 GHz with a low bit error rate under 10−10. Resistive switching in atomically thin sheets of hexagonal boron nitride can be used to create analogue switches for applications in communication systems across radio, 5G and terahertz frequencies.
Published: 2020

19. Strain and electronic properties at the van der Waals interface of phosphorus/boron nitride heterobilayers

Author: Lorenzo Sponza, Hakim Amara, François Ducastelle, Baptiste Bienvenu, LEM, UMR 104, CNRS-ONERA, Université Paris-Saclay (Laboratoire d'étude des microstructures), ONERA-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Service de recherches de métallurgie physique (SRMP), Département des Matériaux pour le Nucléaire (DMN), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Laboratoire Matériaux et Phénomènes Quantiques (MPQ (UMR_7162)), Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité), ANR-17-CE24-0023,EPOS-BP,Electroluminescence en spin polarisés dans les couches minces de phosphore noir(2017), European Project: 785219,H2020,GrapheneCore2(2018), and Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP)
Subjects: Materials science, Ab initio, 02 engineering and technology, 01 natural sciences, Strain, Condensed Matter::Materials Science, symbols.namesake, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Ab-initio simulations, 0103 physical sciences, [CHIM]Chemical Sciences, Bilayer, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, [PHYS]Physics [physics], Valence (chemistry), Condensed matter physics, Black phosphorus, 021001 nanoscience & nanotechnology, Hexagonal boron nitride, Zigzag, chemistry, Boron nitride, Excited state, symbols, Density functional theory, van der Waals force, 0210 nano-technology
Abstract: We study the mechanical and electronic properties of heterobilayers composed of black phosphorus (BP) on hexagonal boron nitride (hBN) and of blue phosphorus (${\mathrm{P}}_{\mathrm{blue}}$) on hBN by means of ab initio density functional theory. Emphasis is put on how the stress applied on the constituent layers impact their structural and electronic properties. For this purpose, we adopt a specific scheme of structural relaxation which allows us to distinguish between the energy cost of distorting each layer and the gain in stacking them together. In most cases we find that the BP tends to contract along the softer armchair direction, as already reported for similar structures. This contraction can attain up to 5% of strain, which might deteriorate its very good transport properties along the armchair direction. To prevent this, we propose a twisted-bilayer configuration where the largest part of the stress applies on the zigzag axis, resulting in a lower impact on the transport properties of BP. We also investigated a ${\mathrm{P}}_{\mathrm{blue}}$/hBN bilayer. A peculiar hybridization between the valence states of the two layers lets us suggest that electron-hole pairs excited in the bilayer will exhibit a mixed character, with electrons localized solely in the ${\mathrm{P}}_{\mathrm{blue}}$ layer and holes spread onto the two layers.
Published: 2020

20. A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology

Author: Emiliano Pallecchi, Thomas Zimmer, Max C. Lemme, Vikram Passi, Di Zhou, Soukaina Ben Salk, Henri Happy, Dalal Fadil, Sebastien Fregonese, Wei Wei, Wlodek Strupinski, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), School of Computer and Electronic Information [Guangxi University], Guangxi University [Nanning], Warsaw University of Technology [Warsaw], Rheinisch-Westfälische Technische Hochschule Aachen University (RWTH), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Carbon - IEMN (CARBON - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), EU Horizon2020 research and innovation programe (Graphene Flagship – Graphene Core2 785219) for financial supports. This work was partially supported by the French RENATECH network, Renatech Network, European Project: 785219,H2020,GrapheneCore2(2018), Rheinisch-Westfälische Technische Hochschule Aachen (RWTH), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), and Carbon-IEMN (CARBON-IEMN)
Subjects: Materials science, microwave, mmic, 02 engineering and technology, Integrated circuit, 01 natural sciences, lcsh:Technology, law.invention, lcsh:Chemistry, chemistry.chemical_compound, law, Balun, 0103 physical sciences, Silicon carbide, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Instrumentation, lcsh:QH301-705.5, Monolithic microwave integrated circuit, 010302 applied physics, Fluid Flow and Transfer Processes, Graphene, business.industry, lcsh:T, Process Chemistry and Technology, 2d materials, Transistor, graphene, General Engineering, 021001 nanoscience & nanotechnology, active balun, lcsh:QC1-999, Computer Science Applications, chemistry, lcsh:Biology (General), lcsh:QD1-999, lcsh:TA1-2040, Optoelectronics, 0210 nano-technology, Bilayer graphene, business, lcsh:Engineering (General). Civil engineering (General), ddc:600, integrated circuits, Microwave, lcsh:Physics
Abstract: Applied Sciences 10(6), 2183 (2020). doi:10.3390/app10062183, Published by MDPI, Basel
Published: 2020

21. Graphene for radio frequency electronics

Author: Wei, Wei, Dalal, Fadil, Fregonese, Sebastien, Strupinski, Wlodek, Pallecchi, Emiliano, Happy, Henri, Laboratoire d'ingénierie pour les systèmes complexes (UR LISC), Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Warsaw University of Technology [Warsaw], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, European Project: 785219, Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Carbon - IEMN (CARBON - IEMN), and European Project: 785219,H2020,GrapheneCore2(2018)
Subjects: Hardware_INTEGRATEDCIRCUITS, Hardware_PERFORMANCEANDRELIABILITY, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract: oral; International audience; In the framework of the European project Flagship Graphene, we have developed several process technologies, for fabricating graphene field-effect transistors, for radio frequency (RF) applications. Depending on the technique used to synthesize graphene, different transistors topologies were designed, given rise to different applications. Graphene materials under consideration include graphene growth on silicon carbide, graphene growth by chemical vapor deposition (CVD) on copper foil. After fabrication of transistors on rigid and on flexible substrates, high frequency characterization of devices is made. Based on the performance of transistors, RF circuits where designed and fabricated.
Published: 2020

22. Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors

Author: Anibal Pacheco-Sanchez, Nikolaos Mavredakis, Henri Happy, David Jiménez, Wei Wei, Emiliano Pallecchi, P. C. Feijoo, Universitat Autònoma de Barcelona (UAB), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon - IEMN (CARBON - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), European UnionEuropean Commission [GrapheneCore2 785219, GrapheneCore3 881603], Ministerio de Ciencia, Innovacion y Universidades [RTI2018-097876-B-C21], European Regional Development Funds (ERDF) through the Programa Operatiu FEDER de Catalunya 2014-2020, Secretaria d'Universitats i Recerca of the Departament d'Empresa i Coneixement of the Generalitat de CatalunyaGeneralitat de Catalunya, GraphCAT [001-P-001702], Renatech Network, European Project: 785219,H2020,GrapheneCore2(2018), Universidad Autónoma de Barcelona, and Carbon-IEMN (CARBON-IEMN)
Subjects: Materials science, FOS: Physical sciences, Applied Physics (physics.app-ph), graphene field-effect transistor (GFET), Transistors, 01 natural sciences, Analytical model, law.invention, [SPI]Engineering Sciences [physics], law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, high-frequency (HF) performance, Figure of merit, Electrical and Electronic Engineering, Polarity (mutual inductance), Pulse measurements, Condensed Matter::Quantum Gases, 010302 applied physics, Condensed Matter - Mesoscale and Nanoscale Physics, Graphene, business.industry, Hysteresis, Transistor, Experimental data, Logic gates, Voltage measurement, Physics - Applied Physics, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, Logic gate, Performance evaluation, Optoelectronics, opposing pulses, channel potential, traps, business, Voltage
Abstract: International audience; The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and suitable approach to obtain reproducible device characteristics. Trap-affected and trap-reduced experimental data enable a discussion regarding the impact of traps on static and dynamic device performance. An analytical drain current model calibrated with the experimental data enables the study of the trap effects on the channel potential within the device. High-frequency (HF) figures of merit and the intrinsic gain of the device obtained from both experimental and synthetic data with and without hysteresis show the importance of considering the generally overlooked impact of traps for analog and HF applications.
Published: 2020

23. A Scalable Silicon Nanowires-Grown-On-Graphite Composite for High-Energy Lithium Batteries

Author: Gérard Lapertot, Pierre-Henri Jouneau, Cédric Haon, Praveen Kumar, Dmitry Aldakov, Saravanan Karuppiah, Jean-Baptiste Ducros, Caroline Keller, Pascale Chenevier, Synthèse, Structure et Propriétés de Matériaux Fonctionnels (STEP ), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Département de l'électricité et de l'hydrogène dans les transports (DEHT), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de L'Energie Solaire (INES), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département Interfaces pour l'énergie, la Santé et l'Environnement (DIESE), Département de l'Electricité et de l'Hydrogène pour les Transports (DEHS), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), European Project: 785219, European Project: 685716,H2020,H2020-NMP-2015-two-stage,SINTBAT(2016), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and European Project: 785219,H2020,GrapheneCore2(2018)
Subjects: Materials science, anode, Silicon, Composite number, volume expansion, General Physics and Astronomy, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 010402 general chemistry, Electrochemistry, 01 natural sciences, 7. Clean energy, silicon-graphite, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, law, General Materials Science, Graphite, high loading, General Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Cathode, 0104 chemical sciences, Anode, chemistry, Electrode, Lithium, 0210 nano-technology, lithium ion batteries
Abstract: International audience; Silicon (Si) is the most promising anode candidate for the next generation of lithium-ion batteries but difficult to cycle due to its poor electronic conductivity and large volume change during cycling. Nanostructured Si-based materials allow high loading and cycling stability but remain a challenge for process and engineering. We prepare a Si nanowires-grown-on-graphite one-pot composite (Gt-SiNW) via a simple and scalable route. The uniform distribution of SiNW and the graphite flakes alignment prevent electrode pulverization and accommodate volume expansion during cycling, resulting in very low electrode swelling. Our designed nano-architecture delivers outstanding electrochemical performance with a capacity retention of 87% after 250 cycles at 2C rate with an industrial electrode density of 1.6 g cm$^{-3}$. Full cells with NMC-622 cathode display a capacity retention of 70% over 300 cycles. This work provides insights into the fruitful engineering of active composites at the nano-and microscales to design efficient Si-rich anodes.
Published: 2020

24. An epitaxial graphene platform for zero-energy edge state nanoelectronics

Author: Vladimir S. Prudkovskiy, Yiran Hu, Kaimin Zhang, Yue Hu, Peixuan Ji, Grant Nunn, Jian Zhao, Chenqian Shi, Antonio Tejeda, David Wander, Alessandro De Cecco, Clemens B. Winkelmann, Yuxuan Jiang, Tianhao Zhao, Katsunori Wakabayashi, Zhigang Jiang, Lei Ma, Claire Berger, Walt A. de Heer, Tianjin University (TJU), Georgia Institute of Technology [Atlanta], Laboratoire de Physique des Solides (LPS), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Nano-Electronique Quantique et Spectroscopie (NEEL - QuNES), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), National High Magnetic Field Laboratory (NHMFL), Florida State University [Tallahassee] (FSU), Kwansei Gakuin University, Circuits électroniques quantiques Alpes (NEEL - QuantECA), Georgia Institute of Technology [Lorraine, France], ANR-19-CE24-0025,BONNEG,Films bidimensionnels épitaxiés BN/epigraphène/SiC pour la nanoélectronique(2019), European Project: 696656,H2020,H2020-Adhoc-2014-20,GrapheneCore1(2016), and European Project: 785219,H2020,GrapheneCore2(2018)
Subjects: Condensed Matter - Materials Science, Multidisciplinary, Condensed Matter - Mesoscale and Nanoscale Physics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, General Physics and Astronomy, General Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, General Biochemistry, Genetics and Molecular Biology
Abstract: Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater that the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon-ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics., File contains article and supplementary. Nature Communications (in print)
Published: 2019

25. A corner reflector of graphene Dirac fermions as a phonon-scattering sensor

Author: Graef, H., MELE, D., Banszerus, L., Stampfer, C., Bocquillon, E., Teo, E., Noury, Adrien, Vergara-Cruz, Jorge, Morfin, Pascal, Gordillo, Maria, Boronat, Jordi, Balibar, Sebastien, Bachtold, Adrian, Yang, Wei, Berthou, Simon, Lu, Xiaobo, wilmart, quentin, Denis, Anne, Rosticher, Michael, Taniguchi, Takashi, Watanabe, Kenji, Fève, Gwendal, Berroir, Jean-Marc, Zhang, Guangyu, Voisin, Christophe, Baudin, Emmanuel, Plaçais, Bernard, Physique Mésoscopique, Laboratoire de physique de l'ENS - ENS Paris (LPENS (UMR_8023)), Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), High Energy Accelerator Research Organization (KEK), University of Tsukuba, National Institute for Fusion Science (NIFS), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Université Paris Diderot - Paris 7 (UPD7)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Université Paris Diderot - Paris 7 (UPD7), KEK (High energy accelerator research organization), École normale supérieure - Paris (ENS Paris)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Université Paris Diderot - Paris 7 (UPD7)-École normale supérieure - Paris (ENS Paris)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Université Paris Diderot - Paris 7 (UPD7), Sorbonne Universités, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), École normale supérieure - Paris (ENS Paris)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Université Paris Diderot - Paris 7 (UPD7), China Agricultural University (CAU), Nanjing Southeast University, National Institute for Materials Science (NIMS), Laboratoire Pierre Aigrain (LPA), Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Chinese Academy of Sciences [Changchun Branch] (CAS), Institut des Sciences de la Terre (ISTerre), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-PRES Université de Grenoble-Institut de recherche pour le développement [IRD] : UR219-Institut national des sciences de l'Univers (INSU - CNRS)-Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR)-Université Joseph Fourier - Grenoble 1 (UJF), Nano-Optique, Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), ANR-14-CE08-0018,GoBN,Hétérostructures de graphènes blanc et noir(2014), European Project: 785219,H2020,GrapheneCore2(2018), School of Electrical and Electronic Engineering, School of Materials Science & Engineering, CINTRA CNRS/NTU/Thales, Research Techno Plaza, École normale supérieure - Paris (ENS Paris)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), and École normale supérieure - Paris (ENS Paris)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 0301 basic medicine, Nanoscience and Technology, Phonon, Science, High Energy Physics::Lattice, Dirac (software), General Physics and Astronomy, Physics::Optics, FOS: Physical sciences, 02 engineering and technology, General Biochemistry, Genetics and Molecular Biology, Article, law.invention, Corner reflector, 03 medical and health sciences, symbols.namesake, law, Nanoscience and technology, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), lcsh:Science, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Multidisciplinary, Phonon scattering, Condensed matter physics, Condensed Matter - Mesoscale and Nanoscale Physics, Scattering, Graphene, General Chemistry, 021001 nanoscience & nanotechnology, Refraction, 3. Good health, 030104 developmental biology, Dirac fermion, symbols, Electrical and electronic engineering [Engineering], lcsh:Q, ddc:500, 0210 nano-technology
Abstract: Dirac fermion optics exploits the refraction of chiral fermions across optics-inspired Klein-tunneling barriers defined by high-transparency p-n junctions. We consider the corner reflector (CR) geometry introduced in optics or radars. We fabricate Dirac fermion CRs using bottom-gate-defined barriers in hBN-encapsulated graphene. By suppressing transmission upon multiple internal reflections, CRs are sensitive to minute phonon scattering rates. We report on doping-independent CR transmission in quantitative agreement with a simple scattering model including thermal phonon scattering. As a new signature of CRs, we observe Fabry-P\'erot oscillations at low temperature, consistent with single-path reflections. Finally, we demonstrate high-frequency operation which promotes CRs as fast phonon detectors. Our work establishes the relevance of Dirac fermion optics in graphene and opens a route for its implementation in topological Dirac matter., Comment: 11 pages, 4 figures
Published: 2019
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26. Velocity Saturation Effect on Low Frequency Noise in Short Channel Single Layer Graphene Field Effect Transistors

Author: Jose A. Garrido, Andrea Bonaccini Calia, Ramon Garcia Cortadella, Wei Wei, D. Vignaud, Nikolaos Mavredakis, Emiliano Pallecchi, Henri Happy, David Jiménez, Departament d'Enginyeria Electrònica [Barcelona], Universitat Autònoma de Barcelona (UAB), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Carbon - IEMN (CARBON - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Catalan Institute of Nanoscience and Nanotechnology (ICN2), Consejo Superior de Investigaciones Científicas [Madrid] (CSIC)-Barcelona Institute of Science and Technology (BIST), Institució Catalana de Recerca i Estudis Avançats (ICREA), Renatech Network, European Project: 785219,H2020,GrapheneCore2(2018), European Commission, Ministerio de Economía y Competitividad (España), Ministerio de Ciencia, Innovación y Universidades (España), Agencia Estatal de Investigación (España), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: Materials science, Infrasound, 02 engineering and technology, low frequency noise, graphene field effect transistor, 01 natural sciences, Noise (electronics), Analytical model, [SPI]Engineering Sciences [physics], 0103 physical sciences, Phase noise, Materials Chemistry, Electrochemistry, Low frequency noise, 010302 applied physics, business.industry, Graphene field effect transistor, Velocity saturation, Contact resistance, graphene, analytical model, 021001 nanoscience & nanotechnology, velocity saturation, Electronic, Optical and Magnetic Materials, Optoelectronics, Field-effect transistor, Radio frequency, Graphene, 0210 nano-technology, business, Voltage
Abstract: Graphene devices for analog and radio frequency (RF) applications are prone to low frequency noise (LFN) due to its up conversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors (GFETs) that operate at high electric fields in order to ensure a high speed. Electric field is inversely proportional to device length and proportional to channel potential, so it gets maximized as the drain voltage increases and the transistor's length shrinks. Under these conditions though, short channel effects like velocity saturation (VS) should be considered. The reduction of LFN data due to the VS effect at short channel GFETs operating at high drain potential is for the first time shown in the present work. Carrier number and mobility fluctuations have been proven to be the main sources that generate LFN in GFETs. While their contribution to the bias dependence of LFN in long channels has been thoroughly investigated, the way in which VS phenomenon affects LFN in short channel devices under high drain voltage conditions has not been well understood. In this paper we have proposed a physics-based analytical LFN model that works under both low and high electric field conditions. The implemented model is validated with experimental data from CVD grown back-gated single layer GFETs operating at gigahertz frequencies. The model accurately captures the reduction of LFN especially near the charge neutrality point because of the effect of the VS mechanism. Moreover, an analytical expression for the effect of contact resistance on LFN is derived. This contact resistance contribution is experimentally shown to be dominant at high gate voltages and is accurately described by the proposed model. The noise parameter related to LFN at contacts is found to have an exponential dependence with contact resistance, and to our knowledge, this is shown for the first time., This work was funded by the Ministerio de Economía y Competitividad under the project TEC2015-67462-C2-1-R and the European Union’s Horizon 2020 research and innovation program under Grant Agreement No. GrapheneCore2 785219 (Graphene Flagship), Marie Skłodowska-Curie Grant Agreement No 665919 and Grant Agreement No. 732032 (BrainCom). This work was also partly supported by the French RENATECH network. The ICN2 is supported by the Severo Ochoa Centres of Excellence programme, funded by the Spanish Research Agency (AEI, grant no. SEV-2017-0706).
Published: 2019

27. Synthesis of hexagonal boron nitride 2D layers using polymer derived ceramics route and derivatives

Author: Victor Vuillet-a-Ciles, Bérangère Toury, Catherine Journet, Catherine Marichy, Yangdi Li, Boitumelo J. Matsoso, Vincent Garnier, Wenjun Hao, Philippe Steyer, Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), iMUST LABEX program MUSCAT-2D, ANR-16-CE08-0021,ALaDiN,Nouvelle voie ' atomic layer deposition ' pour l'élaboration de films minces de nitrure de bore(2016), European Project: 785219, and European Project: 785219,H2020,GrapheneCore2(2018)
Subjects: nanosheets, Materials science, 2D material, Sintering, Hexagonal boron nitride, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Atomic layer deposition, [CHIM]Chemical Sciences, General Materials Science, Ceramic, hexagonal boron nitride, chemistry.chemical_classification, sintering, [CHIM.MATE]Chemical Sciences/Material chemistry, Polymer, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, [CHIM.POLY]Chemical Sciences/Polymers, Chemical engineering, chemistry, visual_art, atomic layer deposition, visual_art.visual_art_medium, polymer derived ceramics, 0210 nano-technology
Abstract: Hexagonal boron nitride (h-BN) is nowadays an increasingly attractive material, especially for two-dimensional material applications, due to its intrisic properties. However, its properties are highly dependent on the used synthesis approach. The polymer derived ceramics (PDCs) route allows elaboration of h-BN with tailored textural and structural properties. Here, we demonstrate the interest of the PDCs pathway for the synthesis of h-BN. Growth of h-BN single crystals with crystal sizes of a few microns at relatively low temperature and atmospheric pressure is successfully achieved from borazine precursor using PDCs. The crystallization is improved by additivation of 5 wt% of Li3N to the pre-ceramic polymer. Furthermore, by coupling PDCs with gas pressure sintering, starting from the same pre-ceramic polymer and 25 wt% of Li3N, the crystal size is enlarged up to hundreds of microns. The fabricated single crystals of pure h-BN can then be exfoliated into h-BN nanosheets. Finally, by combining PDCs with atomic layer deposition, functional BN nano-/hetero-structures are successfully synthesized from highly structured sensitive templates, making this ALD process a promising alternative for fabricating functional BN nanostructures.
Published: 2020

28. High frequency and noise performance of GFETs

Author: Wei Wei, Emiliano Pallecchi, Sebastien Fregonese, Marina Deng, Gilles Dambrine, Thomas Zimmer, Dalal Fadil, Henri Happy, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Carbon-IEMN (CARBON-IEMN), Renatech Network, European Project: 785219,H2020,GrapheneCore2(2018), and Carbon - IEMN (CARBON - IEMN)
Subjects: 010302 applied physics, Materials science, business.industry, Terahertz radiation, Graphene, Amplifier, Contact resistance, Electrical engineering, Linearity, 02 engineering and technology, 021001 nanoscience & nanotechnology, Graphene field effect transistors, 01 natural sciences, Noise (electronics), Low noise, law.invention, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: Graphene material exhibits a number of outstanding electronic and mechanical properties that make it very attractive for micro and nanoelectronic applications. Considering graphene field effect transistors (GFETs), considerable efforts were made during the recent years, and the devices at state of the art show impressive high frequency cut-off frequencies. The interest of GFET is particularly strong for some high frequency (HF) applications such as high linearity mixer in W-band, THz detection, …. In this paper we will give an overview on the GFETs and will present the devices developed in our Lab. Based on high frequency measurements of noise characteristics of our GFETs, we will point out the impact of technological aspects (such as contact resistance, device structure) on the HF noise performances. The implications of our findings for the development of graphene-based circuit such as low noise amplifiers will be also discussed.
Published: 2017

29. Two-photon absorption in two-dimensional materials: The case of hexagonal boron nitride

Author: Hakim Amara, Claudio Attaccalite, Myrta Grüning, François Ducastelle, Sylvain Latil, Centre Interdisciplinaire de Nanoscience de Marseille ( CINaM ), Aix Marseille Université ( AMU ) -Centre National de la Recherche Scientifique ( CNRS ), Centre National de la Recherche Scientifique ( CNRS ), Queen's University [Belfast] ( QUB ), Laboratoire d'étude des microstructures ( LEM - ONERA - CNRS ), ONERA-Centre National de la Recherche Scientifique ( CNRS ), Laboratoire de Chimie des Surfaces et Interfaces ( LCSI ), Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ), Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS), Queen's University [Belfast] (QUB), Laboratoire d'étude des microstructures [Châtillon] (LEM - ONERA - CNRS), Centre National de la Recherche Scientifique (CNRS)-ONERA, Laboratoire de Chimie des Surfaces et Interfaces (LCSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-14-CE08-0018,GoBN,Hétérostructures de graphènes blanc et noir(2014), European Project: 1531829(2015), European Project: 696656,H2020,H2020-Adhoc-2014-20,GrapheneCore1(2016), European Project: 785219,H2020,GrapheneCore2(2018), and ONERA-Centre National de la Recherche Scientifique (CNRS)
Subjects: Hydrogenic model, Materials science, One-photon, Exciton, Point reflection, Ab initio, [ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Physics::Optics, FOS: Physical sciences, Hexagonal boron nitride, 02 engineering and technology, 01 natural sciences, Two-photon absorption, Molecular physics, Nonlinear optical, Transition metal, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 010306 general physics, Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Degenerate energy levels, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, 3. Good health, Homogeneous space, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology
Abstract: We calculate the two-photon absorption in bulk and single layer hexagonal boron nitride (hBN) both by an ab-initio real-time Bethe-Salpeter approach and by a the real-space solution of the excitonic problem in tight-binding formalism. The two-photon absorption obeys different selection rules from those governing linear optics and therefore provides complementary information on the electronic excitations of hBN. Combining the results from the simulations with a symmetry analysis we show that two-photon absorption is able to probe the lowest energy $1s$ states in the single layer hBN and the lowest dark degenerate dark states of bulk hBN. This deviation from the "usual" selection rules based on the continuous hydrogenic model is explained within a simple model that accounts for the crystalline symmetry. The same model can be applied to other two-dimensional materials with the same point-group symmetry, such as the transition metal chalcogenides. We also discuss the selection rules related to the inversion symmetry of the bulk layer stacking., 13 pages, 4 figures
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30. High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation

Author: Takashi Taniguchi, Bernard Plaçais, Emmanuel Baudin, Quentin Wilmart, Mohamed Boukhicha, Vincent Bouchiat, Emiliano Pallecchi, Kenji Watanabe, Erwann Bocquillon, Gwendal Fève, José Palomo, Holger Graef, M. Rosticher, Jean-Marc Berroir, David Mele, Laboratoire de physique de l'ENS - ENS Paris (LPENS), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité)-Département de Physique de l'ENS-PSL, École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL), Physique Mésoscopique, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité)-Département de Physique de l'ENS-PSL, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), National Institute for Materials Science (NIMS), Systèmes hybrides de basse dimensionnalité (NEEL - HYBRID), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Nano-Optique, Carbon - IEMN (CARBON - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), The research leading to these results have received partial funding from the European UnionHorizon 2020 research and innovation programme under grant No. 785219 'Graphene Core 2', and fromthe ANR-14-CE08-018-05 'GoBN'. The work of Q.W. was supported by a DGA-MRIS scholarship, ANR-14-CE08-0018,GoBN,Hétérostructures de graphènes blanc et noir(2014), European Project: 785219,H2020,GrapheneCore2(2018), Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP)-Sorbonne Université (SU)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP)-Sorbonne Université (SU)-École normale supérieure - Paris (ENS Paris), Systèmes hybrides de basse dimensionnalité (HYBRID), Carbon-IEMN (CARBON-IEMN), Laboratoire de physique de l'ENS - ENS Paris (LPENS (UMR_8023)), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), and Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP)-École normale supérieure - Paris (ENS Paris)
Subjects: Materials science, Terahertz radiation, Physics::Optics, 02 engineering and technology, Substrate (electronics), lcsh:Technology, 7. Clean energy, 01 natural sciences, law.invention, lcsh:Chemistry, Graphene transistor, [SPI]Engineering Sciences [physics], Dirac pinch-off, law, 0103 physical sciences, contact gating, General Materials Science, 010306 general physics, lcsh:QH301-705.5, Instrumentation, Fluid Flow and Transfer Processes, [PHYS]Physics [physics], lcsh:T, Scattering, business.industry, Graphene, Oscillation, Process Chemistry and Technology, Velocity saturation, Transistor, General Engineering, 021001 nanoscience & nanotechnology, velocity saturation, lcsh:QC1-999, Computer Science Applications, high-frequency, lcsh:Biology (General), lcsh:QD1-999, lcsh:TA1-2040, Optoelectronics, Field-effect transistor, lcsh:Engineering (General). Civil engineering (General), 0210 nano-technology, business, lcsh:Physics
Abstract: The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance. In this work, we use this knowledge to analyze DC and RF transport properties of bottom-gated graphene on boron nitride field effect transistors exhibiting pronounced velocity saturation by substrate hyperbolic phonon polariton scattering, including Dirac pinch-off effect. We predict and demonstrate a maximum oscillation frequency exceeding 20 &nbsp, GHz . We discuss the intrinsic 0.1 &nbsp, THz limit of GFETs and envision plasma resonance transistors as an alternative for sub-THz narrow-band detection.
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30 results on '"European Project: 785219,H2020,GrapheneCore2(2018)"'

1. Low-Cost Tin Compounds as Seeds for the Growth of Silicon Nanowire–Graphite Composites Used in High-Performance Lithium-Ion Battery Anodes

2. Ectopic expression of a mechanosensitive channel confers spatiotemporal resolution to ultrasound stimulations of neurons for visual restoration

3. Ferromagnetism and Rashba Spin–Orbit Coupling in the Two-Dimensional (V,Pt)Se2 Alloy

4. Easy Diameter Tuning of Silicon Nanowires with Low-Cost SnO2-Catalyzed Growth for Lithium-Ion Batteries

5. Low-Frequency Noise Parameter Extraction Method for Single-Layer Graphene FETs

6. Ab Initio study of graphene/hBN Van der Waals heterostructures: effect of electric field, twist angles and p-n doping on the electronic properties

7. Gut microbiota impairment following graphene oxide exposure is associated to physiological alterations in Xenopus laevis tadpoles

8. Radiative lifetime of free excitons in hexagonal boron nitride

9. Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer

10. Scalable Sacrificial Templating to Increase Porosity and Platinum Utilisation in Graphene-Based Polymer Electrolyte Fuel Cell Electrodes

11. Tuning the Direct and Indirect Excitonic Transitions of h-BN by Hydrostatic Pressure

12. Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride

13. Tuning graphene transistors through ad hoc electrostatics induced by a nanometer-thick molecular underlayer

14. Excitons in bulk black phosphorus evidenced by photoluminescence at low temperature

15. Bias-dependent intrinsic rf thermal noise modeling and characterization of single-layer graphene fets

16. Graphene field-effect transistors with velocity saturation

17. Hierarchical large-scale elastic metamaterials as an innovative passive isolation strategy for seismic wave mitigation

18. Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems

19. Strain and electronic properties at the van der Waals interface of phosphorus/boron nitride heterobilayers

20. A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology

21. Graphene for radio frequency electronics

22. Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors

23. A Scalable Silicon Nanowires-Grown-On-Graphite Composite for High-Energy Lithium Batteries

24. An epitaxial graphene platform for zero-energy edge state nanoelectronics

25. A corner reflector of graphene Dirac fermions as a phonon-scattering sensor

26. Velocity Saturation Effect on Low Frequency Noise in Short Channel Single Layer Graphene Field Effect Transistors

27. Synthesis of hexagonal boron nitride 2D layers using polymer derived ceramics route and derivatives

28. High frequency and noise performance of GFETs

29. Two-photon absorption in two-dimensional materials: The case of hexagonal boron nitride

30. High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation

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30 results on '"European Project: 785219,H2020,GrapheneCore2(2018)"'

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