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A polymer/small-molecule binary-blend hole transport layer provided balanced charge transport and efficient recombination of electrons and holes in the perovskite layer, and an optimal device based on the blended HTL shows the highest EQE of 5.30%.

Semiconducting lead halide perovskite nanocrystals (PNCs) are regarded as promising candidates for next-generation optoelectronic devices due to their solution processability and outstanding optoelectronic properties. While the field of light-emitting diodes (LEDs) and photovoltaics (PVs), two prime examples of optoelectronic devices, has recently seen a multitude of efforts towards high-performance PNC-based devices, realizing both devices with high efficiencies and stabilities through a single PNC processing strategy has remained a challenge. Herein we demonstrate that diphenylproplyammonium (DPAI) surface ligands, found through a judicious ab initio based ligand search, provide a solution to this problem. Our universal PNC ink with DPAI ligands, prepared through a solution-phase ligand exchange process, simultaneously allows single-step processed LED and PV devices with peak electroluminescence external quantum efficiency of 17.00% and power conversion efficiency of 14.92% (stabilized output 14.00%), respectively. We reveal that a careful design of the aromatic rings such as in DPAI is the decisive factor in bestowing such high performances, ease of solution processing, and improved phase stability up to 120 days. Our work illustrates the power of ligand design in producing nanocrystal ink formulations for high-throughput production of optoelectronic devices; it also paves a path for "dual-mode" devices with both PV and LED functionalities. This article is protected by copyright. All rights reserved.

InP-based quantum dot (QD) light-emitting diodes (QLEDs) provide a heavy-metal-free route to size-tuned LEDs having high efficiency. The stability of QLEDs may be enhanced by replacing organic hole-injection layers (HILs) with inorganic layers. However, inorganic HILs reported to date suffer from inefficient hole injection, the result of their shallow work functions. Here, we investigate the tuning of the work function of nickel oxide (NiO

Organic semiconductor-based optoelectronic devices, such as organic solar cells (OSCs) and organic light-emitting diodes (OLEDs), have been investigated for solution-processable roll-to-roll electronic devices. However, for commercial applications, OSCs and OLEDs require highly efficient device performance and effective fabrication processing methods. To achieve this, this work reports the use of solution-processable quinoxaline–phosphine oxide based small molecules (QPSMs) as electron transport layers (ETLs) in OSCs and OLEDs. QPSMs can be dissolved in alcohol owing to the strong dipole moments within their molecular structures, thereby resulting in simple and effective processing during device fabrication. Moreover, QPSMs improve electron injection/extraction via the well-matched energy levels in both OSCs and OLEDs. In particular, optimized OSCs and OLEDs with ((4-(2,3-diphenylquinoxalin-5-yl)phenyl)diphenylphosphine oxide, QxTPPO1) show power conversion efficiency (PCE) of 16.83% in polymer donor : nonfullerene acceptor systems, PCE of 10.07% in polymer donor : fullerene acceptor systems, and external quantum efficiency of 5.00%, which are enhanced by approximately 23%, 19%, and 12%, respectively, compared to those of the reference devices, thereby exhibiting improved device stability.

π-Conjugated polyelectrolytes (CPEs) have been studied as interlayers on top of a separate hole transport layer (HTL) to improve the wetting, interfacial defect passivation, and crystal growth of perovskites. However, very few CPE-based HTLs have been reported without rational molecular design as ideal HTLs for perovskite solar cells (PeSCs). In this study, the authors synthesize a triphenylamine-based anionic CPE (TPAFS-TMA) as an HTL for p-i-n-type PeSCs. TPAFS-TMA has appropriate frontier molecular orbital (FMO) levels similar to those of the commonly used poly(bis(4-phenyl)-2,4,6-trimethylphenylamine) (PTAA) HTL. The ionic and semiconducting TPAFS-TMA shows high compatibility, high transmittance, appropriate FMO energy levels for hole extraction and electron blocking, as well as defect passivating properties, which are confirmed using various optical and electrical analyses. Thus, the PeSC with the TPAFS-TMA HTL exhibits the best power conversion efficiency (PCE) of 20.86%, which is better than that of the PTAA-based device (PCE of 19.97%). In addition, it exhibits negligible device-to-device variations in its photovoltaic performance, contrary to the device with PTAA. Finally, a large-area PeSC (1 cm2 ) and mini-module (3 cm2 ), showing PCEs of 19.46% and 18.41%, respectively, are successfully fabricated. The newly synthesized TPAFS-TMA may suggest its great potential as an HTL for large-area PeSCs.

Metal halide perovskites have been actively studied as promising materials in optoelectronic devices because of their superior optical and electrical properties and have also shown considerable potential for flexible devices because of their good mechanical properties. However, the large hole injection barrier and exciton quenching between the perovskite emitter and poly(3,4-ethylenedioxythiophene):poly-styrene sulfonate (PEDOT:PSS) can lead to the reduction in device efficiency. Here, a nonconductive fluorosurfactant, Zonyl FS-300 (Zonyl), is introduced into the PEDOT:PSS hole transport layer, which reduces the hole injection barrier and exciton quenching at the PEDOT:PSS/perovskite interface. Moreover, a flexible perovskite light-emitting diode with a polymer-silver nanowire composite electrode is demonstrated, showing a maximum current efficiency (CEmax) of 17.90 cd A-1, and this is maintained even after 1000 cycles of bending with a 2.5 mm bending radius.

Perovskite/silicon hybrid tandem solar cells are very close to commercialization owing to their low cost and relatively high efficiency compared to tandem cells based on III-V compound semiconductors. However, most hybrid tandem cell research is based on n-type heterojunction Si cells, which occupy only a small fraction of the total solar market. Here, we propose a new method for optimizing the design of low-cost and high-efficiency monolithic tandem cells based on p-type homojunction Si cells by realizing lossless current matching by simultaneously controlling the band gap energy and thickness of the perovskite film. In addition, systematic studies have been conducted to determine the optimal hole transport layer applicable to the tandem cell from the viewpoint of band alignment and process compatibility, in order to reduce the open-circuit voltage loss. Optimized tandem cells, which were fabricated with a 310 nm thick perovskite layer of (FAPbI3)0.8(MAPbBr3)0.2 and a hole transport layer of poly(triaryl amine), had a significantly increased efficiency of 21.19% compared to semi-transparent stand-alone perovskite (13.4%) and Si cells (12.8%). Our tandem cell represented the highest efficiency increment among all monolithic perovskite/Si tandem cells as well as the highest efficiency among monolithic perovskite/Si tandem cells based on p-type homojunction Si cells with Al back-surface fields. The design rules suggested in this study could also be applicable to different types of perovskite/Si tandem cells.

A novel flexible transparent electrode (TE) having a trilayer-stacked geometry and high optoelectronic performance and operational stability was fabricated by the spin coating method. The trilayer was composed of an ultrathin graphene (Gr) film sandwiched between a transparent and colorless polyimide (TCPI) layer and a methanesulfonic acid (MSA)-treated poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) layer containing dimethylsulfoxide and Zonyl fluorosurfactant (designated as MSA-PDZ film). The introduction of solution-processable TCPI enabled the direct formation of high-quality graphene on organic surfaces with a clean interface. Stable doping of graphene with the MSA-PDZ film enabled tuning of the inherent work function and optoelectronic properties of the PEDOT:PSS films, leading to a high figure of merit of ∼70 in the as-fabricated TEs. Particularly, from multivariate and repetitive harsh environmental tests ( T = -50 to 90 °C, over 90 RH%), the TCPI/Gr heterostructure exhibited excellent tolerance to mechanical and thermal stresses and gas barrier properties that protected the MSA-PDZ film from exposure to moisture. Owing to the synergetic effect from the TCPI/Gr/MSA-PDZ anode structure, the TCPI/Gr/MSA-PDZ-based polymer light-emitting diodes showed highly improved current and power efficiencies with maxima as high as 20.84 cd/A and 22.92 lm/W, respectively (comparable to those of indium tin oxide based PLEDs), in addition to much enhanced mechanical flexibility.

For any solar cell technology to reach the final mass‐production/commercialization stage, it must meet all technological, economic, and social criteria such as high efficiency, large‐area scalability, long‐term stability, price competitiveness, and environmental friendliness of constituent materials. Until now, various solar cell technologies have been proposed and investigated, but only crystalline silicon, CdTe, and CIGS technologies have overcome the threshold of mass‐production/commercialization. Recently, a perovskite/silicon (PVK/Si) tandem solar cell technology with high efficiency of 29.1% has been reported, which exceeds the theoretical limit of single‐junction solar cells as well as the efficiency of stand‐alone silicon or perovskite solar cells. The International Technology Roadmap for Photovoltaics (ITRPV) predicts that silicon‐based tandem solar cells will account for about 5% market share in 2029 and among various candidates, the combination of silicon and perovskite is the most likely scenario. Here, we classify and review the PVK/Si tandem solar cell technology in terms of homo‐ and hetero‐junction silicon solar cells, the doping type of the bottom silicon cell, and the corresponding so‐called normal and inverted structure of the top perovskite cell, along with mechanical and monolithic tandemization schemes. In particular, we review and discuss the recent advances in manufacturing top perovskite cells using solution and vacuum deposition technology for large‐area scalability and specific issues of recombination layers and top transparent electrodes for large‐area PVK/Si tandem solar cells, which are indispensable for the final commercialization of tandem solar cells.

Next-generation electroluminescent displays require efficient and stable red, green and blue light-emitting diodes (LEDs) with low cost, excellent color purity and flexibility, for which perovskite-based LEDs (PeLEDs) are a promising candidate. Among the three primary colors, the low efficiencies and poor stability of blue PeLEDs is the major hurdle to their commercialization. Here, we report an in situ surface engineering strategy incorporating a simple hot injection method with one pot synthesis for surface passivation of cadmium ions (Cd2+) into blue-emissive all-inorganic perovskite nanocrystals (PNCs). The optimized PNCs containing 0.2% Cd show improved photoluminescence quantum yield (PLQY; 66.8%) and ambient stability compared to the neat PNCs (25.5%) at an emission wavelength of 475 nm. PeLEDs with the PNCs show a luminance of 51 cd m−2 and EQE of 3.71%. Through a series of ab initio calculations and comprehensive XPS analysis, we show that Cd incorporation into systems with reduced dimensionality such as PNCs likely takes place via surface inclusion in the perovskite B-site, which effectively suppresses the formation of halide defects and yields enhanced device efficiencies.

In this study, uniform Cs distribution in an organometal halide perovskite (OHP) film was achieved via sequential deposition method entailing the dissolution of Cs compounds in dimethyl formamide (DMF) with inorganic components, as opposed to using isopropyl alcohol with organic components, and the thermal stability and crystallinity of the OHP film were enhanced by improving the structural stability through Cs incorporation. Additionally, the device performance and thermal stability of OHP solar cells were enhanced by Cs incorporation, which led to fewer defect sites and the suppression of defect generation in OHP films, as confirmed by optical and electrical analysis, improving the overall film quality. The sequential deposition method was more amenable to scaling up than the anti-solvent assisted one-step spin-casting method, as demonstrated by the sequential deposition of the OHP film uniformly over a substrate with size of 8 cm × 8 cm. The uniformly sequentially deposited OHP film was used to create a large-area 1 cm2 OHP solar cell, which exhibited a high power conversion efficiency (PCE) of 16.77%. Further scalability of the sequentially deposited OHP solar cell was confirmed by highly uniform device performances by three cells on a single substrate with a negligible PCE standard deviation of 0.94%.

Tin oxide (SnO2) is widely adopted as an electron transport layer in perovskite solar cells (PeSCs) because it has high electron mobility, excellent charge selective behavior owing to a large band gap of 3.76 eV, and low-temperature processibility. To achieve highly efficient SnO2-based PeSCs, it is necessary to control the oxygen vacancies in the SnO2 layer, since the electrical and optical properties vary depending on the oxidation state of Sn. This study demonstrates that the performance of PeSCs may be improved by using nitrogen-doped graphene oxide (NGO) as an oxidizing agent for SnO2. Since NGO changes the oxidation state of the Sn in SnO2 from Sn2+ to Sn4+, the oxygen vacancies in SnO2 can be reduced using NGO. Multiple devices are fabricated, and various techniques are used to assess their performance, including X-ray photoelectron spectroscopy, dark current analysis, and the dependence of the open-circuit voltage on light intensity. Compared with the average power conversion efficiency (PCE) of control devices, PeSCs with SnO2:NGO composite layers exhibit greater PCEs with less deviation. Therefore, the introduction of NGO in a SnO2 layer can be regarded as an effective method of controlling the oxidation state of SnO2 to improve the performance of PeSCs.

Organic–inorganic hybrid perovskites are emerging as promising emitting materials due to their narrow full-width at half-maximum emissions, color tunability, and high photoluminescence quantum yields (PLQYs). However, the thermal generation of free charges at room temperature results in a low radiative recombination rate and an excitation-intensity-dependent PLQY, which is associated with the trap density. Here, we report perovskite films composed of uniform nanosized single crystals (average diameter = 31.7 nm) produced by introducing bulky amine ligands and performing the growth at a lower temperature. By effectively controlling the crystal growth, we maximized the radiative bimolecular recombination yield by reducing the trap density and spatially confining the charges. Finally, highly bright and efficient green emissive perovskite light-emitting diodes that do not suffer from electroluminescence blinking were achieved with a luminance of up to 55 400 cd m–2, current efficiency of 55.2 cd A–1, and exte...

The beneficial use of a hole transport layer (HTL) as a substitution for poly(3,4-ethlyenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) is regarded as one of the most important approaches for improving the stability and efficiency of inverted perovskite solar cells. Here, we demonstrate highly efficient and stable inverted perovskite solar cells by applying a GO-doped PEDOT:PSS (PEDOT:GO) film as an HTL. The high performance of this solar cell stems from the excellent optical and electrical properties of the PEDOT:GO film, including a higher electrical conductivity, a higher work function related to the reduced contact barrier between the perovskite layer and the PEDOT:GO layer, enhanced crystallinity of the perovskite crystal, and suppressed leakage current. Moreover, the device with the PEDOT:GO layer showed excellent long-term stability in ambient air conditions. Thus, the enhancement in the efficiency and the excellent stability of inverted perovskite solar cells are promising for the eventual commercialization of perovskite optoelectronic devices.

The use of hybrid organic–inorganic perovskites in optoelectronic applications are attracting an interest because of their outstanding characteristics, which enable a remarkable enhancement of device efficiency. However, solution-processed perovskite crystals unavoidably contain defect sites that cause hysteresis in perovskite solar cells (PeSCs) and blinking in perovskite light-emitting diodes (PeLEDs). Here, we report significant beneficial effects using a new treatment based on amine-based passivating materials (APMs) to passivate the defect sites of methylammonium lead tribromide (MAPbBr3) through coordinate bonding between the nitrogen atoms and undercoordinated lead ions. This treatment greatly enhanced the PeLED’s efficiency, with an external quantum efficiency (EQE) of 6.2%, enhanced photoluminescence (PL), a lower threshold for amplified spontaneous emission (ASE), a longer PL lifetime, and enhanced device stability. Using confocal microscopy, we observed the cessation of PL blinking in perovskit...

Organic–inorganic hybrid perovskites have emerged as a next-generation candidate for light-emitting device applications due to their excellent optical and electrical properties with narrow band emission compared to organic emitters. The morphological control of perovskite films with full surface coverage and few defect sites is essential for achieving highly efficient perovskite light-emitting diodes (PeLEDs). Here, we obtain a highly uniform perovskite film with a remarkably reduced number of defect sites in a perovskite crystal using chlorobenzene dropping. This effort leads to the enhanced performance of PeLEDs with a CH3NH3PbBr3 film using chlorobenzene dropping with a maximum luminance of 14 460 cd m−2 (at 3.8 V) and a maximum external quantum efficiency (EQE) of 0.71% (at 2.8 V). This research confirms that the role of the solvent in the solvent dropping method is to fabricate a dense and uniform perovskite film and to passivate the defect sites of the perovskite crystal films.

The mechanical flexibility of perovskite solar cells as well as high power conversion efficiency is attracting increasing attention. In addition to existing empirical approaches, such as cyclic bending tests, in this study we report the tensile properties of the perovskite materials themselves. Measuring the tensile properties of free-standing perovskite materials is critical because (1) tensile properties represent the realistic mechanical properties of the film-type perovskite layer in the solar cells including the effects of various defects, and (2) deformation behavior of the perovskite layer at any deformed state of the solar cells can be analyzed using solid mechanics with the tensile properties as input. Critical bending radius of MAPbI

Organic–inorganic hybrid perovskites have been investigated extensively for use in perovskite-based solar cells and light-emitting diodes (LEDs) because of their excellent electrical and optical properties. Although the flexibility of perovskite LEDs has been studied through empirical methods such as cyclic bending tests, the flexibility of the perovskite layer has not been investigated systemically. Here, flexible and semitransparent perovskite LEDs are fabricated: a PEDOT:PSS anode and Ag nanowire cathode allow for flexible and semitransparent devices, while the use of a conjugated polyelectrolyte as an interfacial layer reduces the electron injection barrier between the cathode and the electron transport layer (SPW-111), resulting in enhanced device efficiency. Cyclic bending tests performed on the electrodes and in situ hole–nanoindentation tests performed on the constituent materials suggest that mechanical failure occurs in the perovskite MAPbBr3 layer during cyclic bending, leading to a decrease in...

The fabrication of perovskite film is crucial for achieving efficient perovskite photoelectric device. Herein, a simple and novel encapsulation growth method was applied to prepare high-quality quasi-2D perovskite films with advantages of compact and uniform morphology, high crystallinity with lower defect density, enhanced photoluminescence quantum yield (PLQY) and optimized multidimensional domain distribution and crystallite orientation for perovskite light-emitting diodes (PeLEDs). The encapsulation growth method was found to decrease the proportion of the low-dimensional (n = 1,2,3) domains while increasing the high-dimensional domains content with randomly-oriented crystals, which simultaneously enhanced the overall energy landscape effect and charges transport within the quasi-2D perovskite films, and the PLQY of the quasi-2D perovskites significantly improved from 9.2% to 60.0%. Finally, an efficient flexible green PeLEDs was obtained with a high luminous efficiency (LE) of 47.1 cd/A, and a luminance brightness of 8300 cd/m2, and an efficient sky-blue PeLEDs was also achieved with record EQE of 12.8% by using encapsulation growth method. This encapsulation growth method provides a promising strategy for boosting the efficiency of quasi-2D PeLEDs.

Metal halide perovskites have been investigated for the next-generation light-emitting materials because of their advantages such as high photoluminescence quantum yield (PLQY), excellent color purity, and facile color tunability. Recently, red- and green-emissive perovskite light-emitting diodes (PeLEDs) have shown an external quantum efficiency (EQE) of over 20%, whereas there is still room for improvement for blue emissive PeLEDs. By controlling the halide compositions of chloride (Cl−) and bromide (Br−), the bandgap of perovskites can be easily tuned for blue emission. However, halide segregation easily occurrs in the mixed-halide perovskite under light irradiation and LED operation because of poor phase stability. Here, we explore the effect of A-site cation engineering on the phase stability of the mixed-halide perovskites and find that a judicious selection of low dipole moment A cation (formamidinium or cesium) suppresses the halide segregation. This enables efficient bandgap tuning and electroluminescence stability for sky blue emissive PeLEDs over the current density of 15 mA/cm2.

Poly(3,4-ethylenedioxythiophene):poly-styrene sulfonate (PEDOT:PSS) is commonly used as a hole-transport material in optoelectronic devices such as organic and perovskite-based solar cells and light-emitting diodes. Moreover, PEDOT:PSS is suitable for fabricating flexible and roll-to-roll devices by solution processing. However, PEDOT:PSS has hygroscopic properties, and the water molecules it attracts can damage the active layer of devices, leading to reduced device stability. In this study, we develop a water-stable hole transport layer (HTL) in perovskite light-emitting diodes (PeLEDs) and organic light-emitting diodes (OLEDs) via a simple and effective method, which involves the modification of PEDOT:PSS with 2-pentacosa-10,12-diynamidoethylsulfate as a photo-crosslinking agent. Experimental results show that devices with the developed HTL show greater long-term stability than PeLEDs and OLEDs based on pristine PEDOT:PSS.

Solution-processable perovskite materials have garnered tremendous attention because of their excellent charge carrier mobility, possibility of a tunable optical bandgap, and high photoluminescence quantum efficiency (PLQE). In particular, the uniform morphology of a perovskite film is the most important factor in realizing perovskite light-emitting diodes (PeLEDs) with high efficiency and full-coverage electroluminescence (EL). In this study, we demonstrate highly efficient PeLEDs that contain a perovskite film with a uniform morphology by introducing HBr into the perovskite precursor. The introduction of HBr into the perovskite precursor results in a perovskite film with a uniform, continuous morphology because the HBr increases the solubility of the inorganic component in the perovskite precursor and reduces the crystallization rate of the perovskite film upon spin-coating. Moreover, PeLEDs fabricated using perovskite films with a uniform, continuous morphology, which were deposited using 6 vol% HBr in a dimethylformamide (DMF)/hydrobromic acid (HBr) cosolvent, exhibited full coverage of the green EL emission. Finally, the optimized PeLEDs fabricated with perovskite films deposited using the DMF/HBr cosolvent exhibited a maximum luminance of 3490 cd m(-2) (at 4.3 V) and a luminous efficiency of 0.43 cd A(-1) (at 4.3 V).

We demonstrate the enhanced performance of perovskite light-emitting diodes (PeLEDs) using a solution-processable MoO3 and PEDOT:PSS (PEDOT:MoO3) composite layer as the hole transport layer (HTL). The PEDOT:MoO3 composite layer presents improved hole injection through a reduction in the contact barrier between the HTL and the CH3NH3PbBr3 layer and enhanced crystallinity of the perovskite film. The optimized PeLEDs with the PEDOT:MoO3 composite film showed enhanced external quantum efficiency (EQE) and maximum luminous efficiency, compared to a PeLED using a pristine PEDOT:PSS layer.

A series of anionic conjugated polyelectrolytes (CPEs) is synthesized based on poly(fluorene-co-phenylene) by varying the side-chain ionic density from two to six per repeat units (MPS2-TMA, MPS4-TMA, and MPS6-TMA). The effect of MPS2, 4, 6-TMA as interlayers on top of a hole-extraction layer of poly(bis(4-phenyl)-2,4,6-trimethylphenylamine (PTAA) is investigated in inverted perovskite solar cells (PeSCs). Owing to the improved wettability of perovskites on hydrophobic PTAA with the CPEs, the PeSCs with CPE interlayers demonstrate a significantly enhanced device performance, with negligible device-to-device dependence relative to the reference PeSC without CPEs. By increasing the ionic density in the MPS-TMA interlayers, the wetting, interfacial defect passivation, and crystal growth of the perovskites are significantly improved without increasing the series resistance of the PeSCs. In particular, the open-circuit voltage increases from 1.06 V for the PeSC with MPS2-TMA to 1.11 V for the PeSC with MPS6-TMA. The trap densities of the PeSCs with MPS2,4,6-TMA are further analyzed using frequency-dependent capacitance measurements. Finally, a large-area (1 cm2 ) PeSC is successfully fabricated with MPS6-TMA, showing a power conversion efficiency of 18.38% with negligible hysteresis and a stable power output under light soaking for 60 s.

The addition of chemical additives is considered as a promising approach for obtaining high-quality perovskite films under mild conditions, which is essential for both the efficiency and the stability of organic-inorganic hybrid perovskite solar cells (PeSCs). Although such additive engineering yields high-quality films, the inherent insulating property of the chemical additives prevents the efficient transport and extraction of charge carriers, thereby limiting the applicability of this approach. Here, it is shown that organic conjugated molecules having rhodanine moieties (i.e., SA-1 and SA-2) can be used as semiconducting chemical additives that simultaneously yield large-sized perovskite grains and improve the charge extraction. Using this strategy, a high power conversion efficiency of 20.3% as well as significantly improved long-term stability under humid air conditions is achieved. It is believed that this approach can provide a new pathway to designing chemical additives for further improving the efficiency and stability of PeSCs.

Perovskite-based optoelectronic devices have been rapidly developing in the past 5 years. Since the first report, the external quantum efficiency (EQE) of perovskite light-emitting diodes (PeLEDs) has increased rapidly through the control of morphology and structure from 0.1% to more than 11%. Here, we report the use of various conjugated polyelectrolytes (CPEs) as the hole injection layer in PeLEDs. In particular, we find that poly[2,6-(4,4-bis-potassium butanylsulfonate)-4 H-cyclopenta-[2,1- b;3,4- b']-dithiophene)] (PCPDT-K) transfers holes effectively, blocks electron transport from the perovskite to the underlying ITO layer, and reduces luminescence quenching at the perovskite/PCPDT-K interface. Our optimized PeLEDs with PCPDT-K show enhanced EQE by a factor of approximately 4 compared to control PeLEDs with PEDOT:PSS, reaching EQE values of 5.66%, and exhibit improved device stability.

Here, we report a comprehensive analysis of the electrical, optical, mechanical, and surface morphological properties of composite nanostrutures based on silver nanowires (AgNW) and PEDOT:PSS conducting polymer for the use as flexible and transparent electrodes. Compared to ITO or the single material of AgNW or PEDOT:PSS, the AgNW/PEDOT:PSS composite electrode showed high electrical conductivity with a low sheet resistance of 26.8 Ω/sq at 91% transmittance (at 550 nm), improves surface smoothness, and enhances mechanical properties assisted by an amphiphilic fluoro-surfactant. The polymeric light-emitting diodes (PLEDs) and organic solar cells (OSCs) using the AgNW/PEDOT:PSS composite electrode showed higher device performances than those with AgNW and PEDOT:PSS electrodes and excellent flexibility under bending test. These results indicates that the AgNW/PEDOT:PSS composite presented is a good candidate as next-generation transparent elelctrodes for applications into flexible optoelectronic devices.

The change in the work function (WF) of ZnO with amine-based interfacial mole-cules (AIM) can be controlled by the number of amine groups. AIM with a larger amine group can induce a stronger interface dipole between the amine groups and the ZnO surface, leading to a greater reduction of the WF.

Highly efficient planar perovskite optoelectronic devices are realized by amine-based solvent treatment on compact TiO2 and by optimizing the morphology of the perovskite layers. Amine-based solvent treatment between the TiO2 and the perovskite layers enhances electron injection and extraction and reduces the recombination of photogenerated charges at the interface.

When water shortages occur, toilet water-saving becomes an effective way to solve the problem. We developed a new method that utilizes the accumulated flow rate to predict the flushing performance and to obtain design data for the development of high-efficiency toilets. The results showed that the length and shape of the trapway are the most important factors for flushing performance, and additional water saving can be achieved by delaying the opening of the trapway outlet valve. In addition, the tank water level in the water tank needs to be optimized considering siphon intensity as well as siphon duration. In conclusion, the toilet was optimized up to 6.5 kg of water using 60 mm diameter flexible tube by the method of accumulated flow rate measurement. In the future, the development of an ultra high efficiency toilet below 4.5 kg will be tried utilizing the method.

This study was supported by the Mid-Career Researcher Program (2015R1A2A2A01003263). This work was fi nancially supported by the KIST-UNIST partnership program (1.150091.01/2.150464.01). This work was also supported by the Human Resource Training Program for Regional Innovation and Creativity through the Ministry of Education and National Research Foundation of Korea (NRF-2014H1C1A1073051). We thank the EPSRC (UK) for support.

Conjugated polyelectrolytes (CPEs) with π-delocalized main backbones and ionic pendant groups are intensively studied as interfacial layers for efficient polymer-based optoelectronic devices (POEDs) because they facilitate facile control of charge injection/extraction barriers. Here, a simple and effective method of performing precise interfacial energy level adjustment is presented by employing CPEs with different thicknesses and various ion densities under electric poling to realize efficient charge injection/extraction of POEDs. The effects of the CPE ion densities and electric (positive or negative) poling on the energy level tuning process are investigated by measuring the open-circuit voltages and current densities of devices with the structure indium tin oxide/zinc oxide/CPE/organic active layer/molybdenum oxide/gold while changing the CPE film thickness. The performances of inverted polymer light-emitting diodes and inverted polymer solar cells are remarkably improved by precisely controlling the interfacial energy level matching using optimum CPE conditions.

The efficiency of inverted polymer light-emitting diodes (iPLEDs) were remarkably enhanced by introducing spontaneously formed ripple-shaped nanostructure of ZnO (ZnO-R) and amine-based polar solvent treatment using 2-methoxyethanol and ethanolamine (2-ME+EA) co-solvents on ZnO-R. The ripple-shape nanostructure of ZnO layer fabricated by solution process with optimal rate of annealing temperature improves the extraction of wave guide modes inside the device structure, and 2-ME+EA interlayer enhances the electron injection and hole blocking and reduces exciton quenching between polar solvent treated ZnO-R and emissive layer. As a result, our optimized iPLEDs show the luminous efficiency (LE) of 61.6 cd A-1, power efficiency (PE) of 19.4 lm W-1 and external quantum efficiency (EQE) of 17.8 %. This method provides a promising method, and opens new possibilities for not only organic light-emitting diodes (OLEDs) but also other organic optoelectronic devices such as organic photovoltaics, organic thin film transistors, and electrically driven organic diode laser.

All-inorganic perovskite nanocrystal materials exhibit excellent light-emitting properties in the visible range with narrow-band emissions, relatively high stability levels, and high photoluminescence quantum efficiency. A uniform morphology of perovskite nanocrystal film is necessary to realize highly efficient light-emitting devices, but the morphology of CsPbX3 nanocrystal films has not been intensively studied. Here, a novel method is presented to obtain uniform and stable CsPbBr3 nanocrystal film through a drop-casting method with a poly(methyl methacrylate) (PMMA) matrix. The introduction of CsPbBr3 nanocrystal:PMMA composite film into a perovskite nanocrystal light-emitting diode (PeNLED) brings enhanced device performance with good coverage of green electroluminescence (EL) emission. Moreover, the long-term stability of the PeNLED is improved by the presence of the PMMA due to the resulting considerable water resistance and good thermal stability. Much less EL blinking is also observed from PeNLEDs with the CsPbBr3 nanocrystal:PMMA composite film as compared to the amount with perovskite bulk film under a continuous bias condition. Therefore, it is emphasized that the enhanced efficiency and stability of PeNLEDs by the CsPbBr3 nanocrystal:PMMA composite film can further promote their usage in displays and in lighting applications.

Organic light-emitting diodes have been recently focused for flexible display and solid-state lighting applications and so much effort has been devoted to achieve highly efficient organic light-emitting diodes. Here, we improve the efficiency of inverted polymer light-emitting diodes by introducing a spontaneously formed ripple-shaped nanostructure of ZnO and applying an amine-based polar solvent treatment to the nanostructure of ZnO. The nanostructure of the ZnO layer improves the extraction of the waveguide modes inside the device structure, and a 2-ME + EA interlayer enhances the electron injection and hole blocking in addition to reducing exciton quenching between the polar-solvent-treated ZnO and the emissive layer. Therefore, our optimized inverted polymer light-emitting diodes have a luminous efficiency of 61.6 cd A(-1) and an external quantum efficiency of 17.8%, which are the highest efficiency values among polymer-based fluorescent light-emitting diodes that contain a single emissive layer.

The interfacial dipolar polarization in inverted structure polymer solar cells, which arises spontaneously from the absorption of ethanolamine end groups, such as amine and hydroxyl groups on ripple-structure zinc oxide (ZnO-R), lowers the contact barrier for electron transport and extraction and leads to enhanced electron mobility, suppression of bimolecular recombination, reduction of the contact resistance and series resistance, and remarkable enhancement of the power conversion efficiency.

The tunable bandgaps and facile fabrication of perovskites make them attractive for multi-junction photovoltaics(1,2). However, light-induced phase segregation limits their efficiency and stability(3-5): this occurs in wide-bandgap (>1.65 electron volts) iodide/bromide mixed perovskite absorbers, and becomes even more acute in the top cells of triple-junction solar photovoltaics that require a fully 2.0-electron-volt bandgap absorber(2,6). Here we report that lattice distortion in iodide/bromide mixed perovskites is correlated with the suppression of phase segregation, generating an increased ion-migration energy barrier arising from the decreased average interatomic distance between the A-site cation and iodide. Using an approximately 2.0-electron-volt rubidium/caesium mixed-cation inorganic perovskite with large lattice distortion in the top subcell, we fabricated all-perovskite triple-junction solar cells and achieved an efficiency of 24.3 per cent (23.3 per cent certified quasi-steady-state efficiency) with an open-circuit voltage of 3.21 volts. This is, to our knowledge, the first reported certified efficiency for perovskite-based triple-junction solar cells. The triple-junction devices retain 80 per cent of their initial efficiency following 420 hours of operation at the maximum power point.