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We present experimental results on the emission characteristics of a 1.5-μm distributed feedback (DFB) tapered master oscillator power amplifier (MOPA) in a wide range of steady-state injection conditions, showing different dynamical behaviors. A detailed analysis of the optical and radio-frequency spectra has allowed the identification of three different emission regimes: i) stable amplified DFB emission, but with wavelength jumps when sweeping the injection currents; ii) multimode Fabry-Perot (FP) operation of the complete MOPA cavity; and iii) self-pulsed operation at frequencies between 5 and 8 GHz. The quasi-periodic occurrence of these emission regimes as a function of the injected currents is interpreted in terms of a thermally tuned competition between the modes of the master oscillator and the compound cavity modes. The physical origin of the wavelength jumps and of the alternation between regimes is discussed.

We present the characterization of the optical response of a commercially available 1310 nm VCSEL under gain-switching operation. We demonstrate short pulse generation with pulse widths of 45 ps at 2 GHz repetition rate. The experimental results are compared with simulations based on a rate equation model for single-mode semiconductor lasers. A good agreement is found after a sensible estimation of the simulation parameters.

We present a quasi-3D steady state numerical simulation model for high power tapered Semiconductor Optical Amplifiers. The software self-consistently solves the steady state partial differential equations describing the electric, thermal and optical behavior of these devices. The capabilities of the model are illustrated by showing how the simulation of a test device accounts for the mutual dependence of the carrier and photon densities as a result of the carrier and temperature dependence of the refractive index. Both, carrier and thermal lensing effects are shown to appear at high injection levels.

Space-borne lidar systems require laser transmitters with very good performance in terms of output power, beam quality, conversion efficiency, long term reliability and environmental compatibility. Atmospheric gas sensing additionally requires spectral purity and stability. Solid state lasers are considered the most mature technology for space lidar applications, at expenses of a relatively large size and low conversion efficiency [1]- [3]. Fiber lasers present very high power levels and very good beam quality, but they require specific attention due to their sensitivity to radiation. In this sense, progresses have been made to develop high power fiber amplifiers for different space applications [4]-[6]. Recently, a new generation of high brightness semiconductor lasers based on tapered geometry has demonstrated relatively high average power levels together with a good beam quality [7]-[10]. These devices are emerging candidates for its direct use in space lidar systems.

We analyze the large (>10 nm) and abrupt jumps in emission wavelength, together with the multimode instabilities associated with them, which are observed in monolithically integrated master oscillator power amplifiers emitting at 1.5 μm. The physical origin of such phenomena is investigated in the framework of a travelling-wave model which phenomenologically incorporates thermal effects via self and cross-heating of the different sections of the device. The occurrence of the wavelength jumps and the instabilities as a function of the injected currents in the two sections is interpreted in terms of a thermally tuned competition between the modes of the master oscillator and the compound cavity modes.

A theoretical analysis of the error probability and the precision of Random Modulation-Continuous Wave LIDAR systems is presented. Both the signal to noise ratio prior and after the correlation process are calculated taking into account the main noise sourc es. Analytical expressions for the estimation of the probability of catastrophic errors in the determination of the distances due to random noise peaks are derived. The effect of the signal to noise ratio on the precision is also theoretically evaluated. As illustrative examples, plots for the signal to noise ratio, the error probability and the precision corresponding to a LIDAR system currently developed in our laboratory are presented.

The performance of new three-section master oscillator power amplifiers emitting at around 1.5 ?m has been analyzed in regard with their application as laser sources for a differential absorption lidar. The devices incorporate a modulation section that can be separately driven thus allowing the required random modulation of the laser emission. The bent design of this section together with the tilting of the output facet ensures a stable single-mode emission in the entire range of driving conditions. At the required modulation frequency (12.5 MHz) a square wave emission profile with high optical modulation amplitude and 22 dB extinction ratio is obtained.

Direct optical modulation of a 1.55 ?m three-section Master Oscillator Power Amplifier has been demonstrated. The temporal response, the optical spectra and the optical modulation amplitude have been analyzed as a function of the frequency and the modulating amplitude. For low modulation amplitude, no spectral broadening was observed up to 1.5 GHz. However, at 12.5 MHz an optical broadening of ~ 4 pm was observed for high modulation amplitudes. At this frequency an extinction ratio of 42 dB has been achieved. The modulation amplitude degrades for frequency values higher than 30 MHz. The device performance under modulation at 12.5 MHz is interesting for its application as laser source for CO2 detection by differential absorption LIDAR operating in the Continuous Wave Random Modulation mode.

We theoretically investigate a dynamical regime, experimentally observed in monolithically integrated master oscillator power amplifiers emitting at 1.5 7 μm, consisting in large emission wavelength jumps of the device from the Bragg wavelength to that of the gain peak. Our analysis is based on numerical simulations by means of a travelling wave model that incorporates spatial effects such as spatial hole burning and coupled-cavity effects. Thermal effects are included by considering the optical response of the quantum well active medium within the quasi-equilibrium approximation at finite temperature, with a phenomenological description of the redshift of the gain peak and the changes in the background material refractive index by means of self- and cross-heating coefficients for both sections. We find that whereas the thermally-induced index changes are the responsible of the modal jumps between consecutive modes, the carrier-induced refractive index changes are the responsible of the jumps occurring between the Bragg wavelength and the gain peak.

High power (> 0.5 W) single-mode frequency laser at 1.55 μm are nowadays key components for a large number of applications such as lidar systems, telemetry or free-space communications. For this level of power, the most suitable and available sources are solid-state lasers and fiber lasers. Semiconductor devices, which are more compact and more efficient, have still to demonstrate very high power operation to be a credible competitor. In order to obtain these levels of power with semiconductor devices, the more suitable device seems to be the Master Oscillator Power Amplifier (MOPA). Single-mode emission is generated by a Distributed Feedback laser (DFB) and the signal is then amplified with a Power Amplifier (PA). To avoid complex optical coupling and to simplify the packaging, it is possible to integrate on the same chip the laser and the amplifier. The main challenges are the fabrication of the multi-section device (at least 2 sections: one for the laser and one for the amplifier) and the reduction of the reflections. Indeed the facet and the internal reflections can create multiple cavities behavior and disturb the laser single-mode emission. In this contribution, we report the realization of a 3-section monolithic MOPA on InP.

We present a high power semiconductor Master Oscillator Power Amplifier monolithically integrated on InP, which includes a modulation section. This device can be used for random-modulation-continuous wave lidar systems or free-space communications.

The beam properties of tapered semiconductor optical amplifiers emitting at 1.57 μm are analyzed by means of simulations with a self-consistent steady state electro-optical and thermal simulator. The results indicate that the self-focusing caused by carrier lensing is delayed to higher currents for devices with taper angle slightly higher than the free diffraction angle.

Nowadays the interest in high power semiconductor devices is growing for applications such as telemetry, lidar system or free space communications. Indeed semiconductor devices can be an alternative to solid state lasers because they are more compact and less power consuming. These characteristics are very important for constrained and/or low power supply environment such as airplanes or satellites. Lots of work has been done in the 800-1200 nm range for integrated and free space Master Oscillator Power Amplifier (MOPA) [1]-[3]. At 1.5 ?m, the only commercially available MOPA is from QPC [4]: the fibred output power is about 700 mW and the optical linewidth is 500 kHz. In this paper, we first report on the simulations we have done to determine the appropriate vertical structure and architecture for a good MOPA at 1.58 ?m (section II). Then we describe the fabrication of the devices (section III). Finally we report on the optical and electrical measurements we have done for various devices (section IV).

We present and analyze experimental results on the emission characteristics of a 1.5 ?m distributed feedback tapered master-oscillator power-amplifier in a wide range of steady-state injection conditions, showing different emission regimes under cw operation: stable single frequency emission, multi-frequency Fabry-Perot-like emission, and self-pulsation operation.

Fully integrated semiconductor master-oscillator power-amplifiers (MOPA) with a tapered power amplifier are attractive sources for applications requiring high brightness. The geometrical design of the tapered amplifier is crucial to achieve the required power and beam quality. In this work we investigate by numerical simulation the role of the geometrical design in the beam quality and in the maximum achievable power. The simulations were performed with a Quasi-3D model which solves the complete steady-state semiconductor and thermal equations combined with a beam propagation method. The results indicate that large devices with wide taper angles produce higher power with better beam quality than smaller area designs, but at expenses of a higher injection current and lower conversion efficiency.

High brightness semiconductor lasers are potential transmitters for future space lidar systems. In the framework of the European Project BRITESPACE, we propose an all-semiconductor laser source for an Integrated Path Differential Absorption lidar system for column-averaged measurements of atmospheric CO2 in future satellite missions. The complete system architecture has to be adapted to the particular emission properties of these devices using a Random Modulated Continuous Wave approach. We present the initial experimental results of the InGaAsP/InP monolithic Master Oscillator Power Amplifiers, providing the ON and OFF wavelengths close to the selected absorption line around 1572 nm.

We report microwave signal generation using a 1550 nm single-mode VCSEL subject to two-frequency optical injection. Double injection locking is achieved. It is found that this generation system is independent of the master lasers polarization.

En el presente trabajo se propone un método para la medida y la estimación del error de la misma en la caracterización del factor de ensanchamiento de línea (parámetro α) de los láseres de semiconductor. La técnica propuesta se basa en el cálculo del parámetro α a partir de la medida de la intensidad y de la frecuencia instantánea de los pulsos generados por un laser de semiconductor conmutado en ganancia. El error de medida se estima mediante la comparación entre el espectro medido y el reconstruido utilizando los perfiles temporales de amplitud y fase de los pulsos generados. El método se ha aplicado a un laser DFB, obteniendo un error de medida menor del 5 %.

In this work, educational software for intuitive understanding of the basic dynamic processes of semiconductor lasers is presented. The proposed tool is addressed to the students of optical communication courses, encouraging self consolidation of the subjects learned in lectures. The semiconductor laser model is based on the well known rate equations for the carrier density, photon density and optical phase. The direct modulation of the laser is considered with input parameters which can be selected by the user. Different options for the waveform, amplitude and frequency of thpoint. Simulation results are plotted for carrier density and output power versus time. Instantaneous frequency variations of the laser output are numerically shifted to the audible frequency range and sent to the computer loudspeakers. This results in an intuitive description of the “chirp” phenomenon due to amplitude-phase coupling, typical of directly modulated semiconductor lasers. In this way, the student can actually listen to the time resolved spectral content of the laser output. By changing the laser parameters and/or the modulation parameters,consequent variation of the laser output can be appreciated in intuitive manner. The proposed educational tool has been previously implemented by the same authors with locally executable software. In the present manuscript, we extend our previous work to a web based platform, offering improved distribution and allowing its use to the wide audience of the web.

The optical and radio-frequency spectra of a monolithic master-oscillator power-amplifier emitting at 1.5 ?m have been analyzed in a wide range of steady-state injection conditions. The analysis of the spectral maps reveals that, under low injection current of the master oscillator, the device operates in two essentially different operation modes depending on the current injected into the amplifier section. The regular operation mode with predominance of the master oscillator alternates with lasing of the compound cavity modes allowed by the residual reflectance of the amplifier front facet. The quasi-periodic occurrence of these two regimes as a function of the amplifier current has been consistently interpreted in terms of a thermally tuned competition between the modes of the master oscillator and the compound cavity modes.

We present an educational software addressed to the students of optical communication courses, for a simple visualization of the basic dynamic processes of semiconductor lasers. The graphic interface allows the user to choose the laser and the modulation parameters and it plots the laser power output and instantaneous frequency versus time. Additionally, the optical frequency variations are numerically shifted into the audible frequency range in order to produce a sound wave from the computer loudspeakers. Using the proposed software, the student can simultaneously see and hear how the laser intensity and frequency change, depending on the modulation and device parameters.

We report an experimental and theoretical investigation of the effect of optical injection on the characteristics of optical pulses generated by gain-switching a 1550 nm single transverse mode vertical-cavity surface-emitting laser (VCSEL). Under continuous wave operation the VCSEL emits in a linear polarization along the whole current range. The experimental analysis of the effect of external optical injection on the timing jitter, maximum power, and pulse width of optical pulses generated by gain-switching the single mode VCSEL is performed for several repetition rates and for different values of the detuning between the frequency of the optical injection and the VCSEL. Experimental results show that for 1 GHz repetition frequency, jitter reductions greater than 70 % can be obtained over a 47 GHz frequency detuning range with a slight increase of 22% in pulse width with respect to the solitary case. A clear anticorrelation between the maximum power and pulse width is also obtained. A theoretical study is also performed by using a model that incorporates both spatial dependence of carrier density and optical field profiles. The two polarization modes are also taken into account in the model. The theoretical results are in good agreement with the experimental results

This paper presents the results obtained in the frame of an ESA-funded project called “Screening and Preevaluation of Shortwave Infrared Laser Diode for Space Application” with the objective of verifying the maturity of state of the art SWIR DFB lasers at 2.1µm to be used for space applications (mainly based on the occultation measurement principle and spectroscopy). The paper focus on the functional and environmental evaluation test plan. It includes high precision characterization, mechanical test (vibration and SRS shocks), thermal cycling, gamma and proton radiation tests, life test and some details of the Destructive Physical Analysis performed. The electro-optical characterization includes measurements of the tuning capabilities of the laser both by current and by temperature, the wavelength stability and the optical power versus laser current.

Optical pulses with duration below 60 ps were generated by gain-switching a Vertical Cavity Surface Emitting Laser (VCSEL) at 1535 nm. We used a radio frequency (RF) sinusoidal signal to modulate the device near threshold. Relaxation oscillations or pulse train generation were observed depending on the gain switching conditions. Repetition rates between 100 MHz and 2 GHz were tested. The dependence of the pulse width and amplitude was investigated in relation with the bias current and excitation frequency and amplitude. The optimal configuration of the current bias and RF modulating signal provided the shortest pulse duration of 57 ps at repetition rate of 800 MHz

Ejercicios y problemas del Laboratorio de electrónica y componentes en le E.T.S.I. de Telecomunicación de la Universidad Politécnica de Madrid

Recoge la teoría de errores, aplicada a la electrónica, y ofrece una serie de problemas con soluciones.

En esta tesis se recoge el trabajo experimental realizado para la caracterización de las propiedades ópticas en diodos láser construidos con estructuras basadas en pozos cuánticos (QW) y puntos cuánticos (QD). Las propiedades que se han estudiado en estos dispositivos son los espectros de ganancia, ganancia diferencial, índice diferencial y factor de ensanchamiento de línea (LEF). La comprensión de estas propiedades es de especial importancia para el diseño de nuevos diodos láser destinados a ser utilizados en aplicaciones exigentes como son las comunicaciones ópticas o aplicaciones médicas. El estudio se ha llevado a cabo en muestras de diodos láser suministrados por diferentes fabricantes: Ferdinand Braun Institut für Hóchstfrequenztechnik, Thales Research and Technology y la Universidad de Würzburg. Debido a esto las muestras de los láseres se han suministrado en diferentes configuraciones, utilizándose tanto dispositivos con cavidades de área ancha como de tipo caballete (“ridge”). En los trabajos se ha realizado el diseño y la construcción de los montajes experimentales y la implementación de los métodos analíticos necesarios para el estudio de las diferentes muestras. En los montajes experimentales se han implementado procesos para el filtrado espacial de los modos laterales de la cavidad presentes en los láseres de área ancha. Los métodos analíticos implementados se han utilizado para reducir los errores existentes en los sistemas de medida, mejorar su precisión y para separar la variación de índice en debida al calentamiento y la variación de corriente cuando los láseres operan en continua. El estudio sistemático de las propiedades de ópticas de los diodos láser basados en QW y QD ha permitido concluir que propiedades como el factor de ensanchamiento de línea no tienen por qué ser necesariamente inferiores en estos últimos, ya que dependen de las condiciones de inyección. En los láseres de QW se ha observado experimentalmente una reducción del factor de ensanchamiento de línea al alcanzarse la segunda transición, debido al aumento de la ganancia diferencial. ABSTRACT This thesis includes the experimental work for the characterization of optical properties of quantum well (QW) and quantum dot (QD) laser diodes. The properties that have been studied in these devices are the gain, differential gain, differential index and the linewith enhancement factor (LEF). The understating of these properties is of special importance for the design of new laser diodes to be used in exigent applications such as optical communications or medical applications. The study has been carried out using laser samples supplied by different manufacturers: Ferdinand Braun Institut fu¨r H¨ochstfrequenztechnik, Thales Research and Technology and the University of Wu¨rzburg. Because of this the laser samples were supplied in various configurations, using both broad area and ridge devices. In the work it has been done the design and construction of the experimental setups and implementation of analytical methods required for the study of the different devices. In the experimental set-ups it has been implemented a spatial filtering process to remove the lateral modes present in broad area lasers. The implemented analytical methods has been used to reduce the experimental errors in the measurement systems, improve the accuracy and separate the index variation caused by heating and current variation when the lasers operated on continuous wave. The systematic study of the optical properties of the QW and QD laser diodes has allowed concluding that properties such the linewith enhancement factor does not have to be necessary to be lower in the QD devices, since it is dependent on the injections conditions. In this work it has been experimentally observed a reduction of the linewith enhancement factor where the second transition has been reached mainly due to in the increased of the differential gain which is observed in this situation.