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The electronic structure of bulk fcc GaAs, fcc and tetragonal CrAs, and CrAs/GaAs supercells, computed within LMTO local spin-density functional theory, is used to extract the band alignment (band offset) for the [1,0,0] GaAs/CrAs interface in dependence of the spin orientation. With the lateral lattice constant fixed to the experimental bulk GaAs value, a local energy minimum is found for a tetragonal CrAs unit cell with a slightly ($\approx$ 2%) reduced longitudinal ([1,0,0]) lattice constant. Due to the identified spin-dependent band alignment, half-metallicity of CrAs no longer is a key requirement for spin-filtering. Encouraged by these findings, we study the spin-dependent tunneling current in [1,0,0] GaAs/CrAs/GaAs heterostructures within the non-equilibrium Green's function approach for an effective tight-binding Hamiltonian derived from the LMTO electronic structure. Results indicate that these heterostructures are probable candidates for efficient room-temperature all-semiconductor spin-filtering devices., Comment: published in JAP, Vol.114, Issue 22

Recent experiments on resonant tunneling structures comprising (Ga,Mn)As quantum wells [Ohya et al., Nature Physics 7, 342 (2011)] have evoked a strong debate regarding their interpretation as resonant tunneling features and the near absences of ferromagnetic order observed in these structures. Here, we present a related theoretical study of a GaAs/(Ga,Mn)As double barrier structure based on a Green's function approach, studying the self-consistent interplay between ferromagnetic order, structural defects (disorder), and the hole tunnel current under conditions similar to those in experiment. We show that disorder has a strong influence on the current-voltage characteristics in efficiently reducing or even washing out negative differential conductance, offering an explanation for the experimental results. We find that for the Be lead doping levels used in experiment the resulting spin density polarization in the quantum well is too small to produce a sizable exchange splitting., Comment: 7 pages, 5 figures

Theory of the electron spin relaxation in graphene on the SiO$_2$ substrate is developed. Charged impurities and polar optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field which leads to spin relaxation by the D'yakonov-Perel' mechanism. Analytical estimates and Monte Carlo simulations show that the corresponding spin relaxation times are between micro- to milliseconds, being only weakly temperature dependent. It is also argued that the presence of adatoms on graphene can lead to spin lifetimes shorter than nanoseconds., Comment: 5 pages, 4 figures

The electronic band structure of graphene in the presence of spin-orbit coupling and transverse electric field is investigated from first principles using the linearized augmented plane-wave method. The spin-orbit coupling opens a gap at the $K(K')$-point of the magnitude of 24 $\mu$eV (0.28 K). This intrinsic splitting comes 96% from the usually neglected $d$ and higher orbitals. The electric field induces an additional (extrinsic) Bychkov-Rashba-type splitting of 10 $\mu$eV (0.11 K) per V/nm, coming from the $\sigma$-$\pi$ mixing. A 'mini-ripple' configuration with every other atom is shifted out of the sheet by less than 1% differs little from the intrinsic case., Comment: 4 pages, 4 figures

Spintronics has attracted wide attention by promising novel functionalities derived from both the electron charge and spin. While branching into new areas and creating new themes over the past years, the principal goals remain the spin and magnetic control of the electrical properties, essentially the I-V characteristics, and vice versa. There are great challenges ahead to meet these goals. One challenge is to find niche applications for ferromagnetic semiconductors, such as GaMnAs. Another is to develop further the science of hybrid ferromagnetic metal/semiconductor heterostructures, as alternatives to all-semiconductor room temperature spintronics. Here we present our representative recent efiorts to address such challenges. We show how to make a digital magnetoresistor by combining two magnetic resonant diodes, or how introducing ferromagnetic semiconductors as active regions in resonant tunneling diodes leads to novel efiects of digital magnetoresistance and of magnetoelectric current oscillations. We also discuss the phenomenon of tunneling anisotropic magnetoresistance in Fe/GaAs junctions by introducing the concept of the spin-orbit coupling field, as an analog of such fields in all-semiconductor junctions. Finally, we look at fundamental electronic and optical properties of GaMnAs by employing reasonable tight-binding models to study disorder efiects., Comment: 13 pages, 7 figures; in the Proceedings of the International Conference on Theoretical Physics'DUBNA-NANO2008'

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field., Comment: tutorial review; 342 pages, 132 figures